CYSTEKEC MTN10N70EA N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 1/9
BVDSS : 770V @Tj=150℃
RDS(ON) : 0.92Ω
MTN10N70EA
ID : 9.5A
Description
The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-82 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=770V typically @ Tj=150℃
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Symbol
Outline
MTN10N70EA
G:Gate
D:Drain
S:Source
MTN10N70EA
SOT-82
G
D
S
Preliminary
CYStek Product Specification
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note 3)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
EAR
dv/dt
700
±30
9.5*
5.7*
38*
237
5
3.0
V
V
A
A
A
V/ns
TL
300
°C
TPKG
260
°C
Pd
50
0.4
-55~+150
W
W/°C
°C
Tj, Tstg
*Drain current limited by maximum junction temperature
mJ
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, TJ=+150℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN10N70EA
Symbol
Rth,j-c
Rth,j-a
Preliminary
Value
2.5
100
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
700
∆BVDSS/∆Tj
VGS(th)
2.0
*GFS
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
Typ.
Max.
Unit
Test Conditions
0.63
6.8
0.87
4.0
±100
10
250
0.92
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
VGS=±30
VDS =650V, VGS =0
VDS =520V, VGS =0, Tj=125°C
VGS =10V, ID=6A
39
9.5
17.6
19
16
49
16
1882
170
20
-
nC
ID=9.5A, VDD=300V, VGS=10V
ns
VDD=300V, ID=9.5A, VGS=10V,
RG=9.1Ω
pF
VGS=0V, VDS=25V, f=1MHz
345
2.8
1.5
9.5
38
530
4.4
V
IS=9.5A, VGS=0V
A
VD=VG=0, VS=1.3V
ns
μC
VGS=0, IF=9.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN10N70EA
MTN10N70EA
Package
SOT-82
(RoHS compliant)
Shipping
Marking
250 pcs/bag, 10 bags/box, 10 boxes / carton
10N70
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 4/9
Characteristic Curves
MTN10N70EA
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 5/9
Characteristic Curves(Cont.)
MTN10N70EA
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 6/9
Characteristic Curves(Cont.)
MTN10N70EA
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 7/9
Test Circuit and Waveforms
MTN10N70EA
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 8/9
Test Circuit and Waveforms(Cont.)
MTN10N70EA
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725EA-A
Issued Date : 2010.06.18
Revised Date :
Page No. : 9/9
SOT- 82 Dimension
Marking:
CYS Logo
Device Name
Date Code
3-Lead SOT-82 Plastic Package
CYStek Package Code: EA
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*Typical
Inches
Min.
Max.
0.291
0.307
0.413
0.425
0.028
0.035
0.019
0.029
0.094
0.106
0.039
0.051
0.630
0.606
*0.086
DIM
A
B
b
b1
C
c1
D
e
Millimeters
Min.
Max.
7.4
7.8
10.5
10.8
0.7
0.9
0.49
0.75
2.4
2.7
1.0
1.3
16.0
15.4
*2.2
DIM
e3
F
H
H2
I
O
V
Inches
Min.
Max.
0.183
0.163
*0.149
*0.100
*0.084
*0.05
*0.012
*10°
Millimeters
Min.
Max.
4.65
4.15
*3.8
*2.54
*2.15
*1.27
*0.3
*10°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN10N70EA
Preliminary
CYStek Product Specification
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