LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED22FC-PR-WIN has a stable ouput power and a lifetime more then 80000 hours. Features • • • • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design Peak Wavelength: typ. 2.23 µm Optical Ouput Power: typ. 1.1 mW qCW Package: TO-18, with PR and window Specifications T=300 K 150 mA CW Min. 2.20 100 Rating Typ. 2.23 250 Max. 2.29 300 200 mA qCW 0.8 1.1 2 mW 1A 20 25 40 mW T=300 K 200 mA qCW 10 20 30 ns V Item Condition Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Unit µm nm -240 … +50 °C 670x770 µm 180 °C TO-18, with parabolic reflector and quartz window (Unit: mm) Operating Regime Quasi-CW • • Maximum current 220 mA Recommended current 150-200mA Pulsed • 06.10.2010 LED22FC-PR-WIN Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) 1 of 2 Typical Performance Curves 06.10.2010 LED22FC-PR-WIN 2 of 2