GR80MT12J 1200 V SiC MOSFET Silicon Carbide Power MOSFET VDS ID @25 °C RDS(ON) N-Channel Enhancement Mode Features = = = 1200 V 36 A 80 mΩ Package Optimized package with separate driver source pin 150 °C Maximum Operating Temperature High blocking voltage with low On-resistance Low output capacitance and gate charge Normally-OFF operation at all temperatures Halogen free, RoHS complaint TAB Drain 67 45 S 2 3 SS 1 GRS G TO-263-7L Advantages Applications Reduced switching losses and minimum gate ringing High system efficiency Increased power density Increased system switching frequency EV Battery Chargers Switched-Mode Mode Power Supply (SMPS) Solar Inverters Renewable Energy Motor Drives Induction Heating Uninterruptible Power Supply (UPS) Maximum Ratings at TC = 25 °C, unless otherwise specified Parameter Drain - Source Voltage Gate - Source Voltage (dynamic) 1 Gate - Source Voltage (static) 2 Operating Junction and Storage Temperature Symbol VDSmax VGSmax VGSop Conditions VGS = 0 V, ID = 10 µA AC (f > 1 Hz) Static TJ, Tstg Value 1200 -10/+25 10/+25 -5/+20 5/+20 Unit V V V -55 55 to +150 °C Electrical Characteristics at T C = 25 °C, unless otherwise specified Parameter Drain - Source Breakdown Voltage Gate Threshold Voltage Drain - Source Leakage Current Gate - Source Leakage Current Drain - Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)DSS VGS = 0 V, ID = 10 μA VDS = VGS, ID = 5 mA VDS = VGS, ID = 5 mA , TJ = 150 °C VDS = 1200 V, VGS = 0 V VDS = 1200 V, VGS = 0 V, TJ = 150 °C VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 20 A VGS = 20 V, ID = 20 A, TJ = 150 °C VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV VGS(th) IDSS IGSS RDS(on) Ciss Coss Crss Min. 1200 Value Typical Max. Unit V 2.6 2. 1.8 1. 0.2 0. 4 V μA 100 80 110 1000 000 85 7 nA mΩ pF pF pF Reverse Diode Characteristics at T C = 25 °C, unless otherwise specified Parameter Diode Forward Voltage Continuous Diode Forward Current 2018 Mar. Rev1.1 Symbol VSD IS Conditions Min. VGS = -4 V, ID = 10 A VGS = -4 V, ID = 10 A, TJ = 150 °C VGS = -4 V http://www.genesicsemi.com http://www.genesicsemi.com/sic_transistors/mosfet/ Value Typical 3.3 3.1 Max. Unit V 40 A Page 1 of 1