Lyontek LY61L1288WL-12E 128k x 8 bit high speed cmos sram Datasheet

®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Description
Initial Issue
Delete Icc1 Spec.
Added I Grade Spec.
Revised Test Condition of ICC/ISB1/IDR
Revised VTERM to VT1 and VT2
Revised FEATURES & ORDERING INFORMATION Lead
free and green package available to Green package available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Adding PKG type : 32 TSOP-II
Revised PACKAGE OUTLINE DIMENSION in page 8
Revised PACKAGE OUTLINE DIMENSION in page 8
Revised ORDERING INFORMATION in page 10
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Jul.25.2004
Sep.21.2004
Apr.20.2009
Jan.5.2010
May.7.2010
Aug.25.2010
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 8/10/12/15ns
„ Low power consumption:
Operating current : 80/75/70/65mA (TYP.)
Standby current : 0.6mA (TYP.)
„ Single 3.3V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 2.0V (MIN.)
„ Green package available
„ Package : 32-pin 8mm x 13.4mm STSOP
32-pin 400 mil TSOP-II
The LY61L1288 is a 1,048,576-bit high speed
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY61L1288 is well designed for high speed
system application. Easy expansion is provided by
using an active LOW Chip Enable(CE#). The active
LOW Write Enable(WE#) controls both writing and
reading of the memory.
The LY61L1288 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
LY61L1288
LY61L1288
LY61L1288(E)
LY61L1288(E)
LY61L1288(I)
LY61L1288(I)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
-20 ~ 80℃
-20 ~ 80℃
-40 ~ 85℃
-40 ~ 85℃
Vcc Range
Speed
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
8/10ns
12/15ns
8/10ns
12/15ns
8/10ns
12/15ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A16
DECODER
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
WE#
OE#
CONTROL
CIRCUIT
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
0.6mA
80/75mA
0.6mA
70/65mA
0.6mA
80/75mA
0.6mA
70/65mA
0.6mA
80/75mA
0.6mA
70/65mA
128Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A16
Address Inputs
DQ0 – DQ7
Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
VCC
Power Supply
VSS
Ground
COLUMN I/O
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
PIN CONFIGURATION
A0
A1
A2
A3
CE#
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
WE#
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A16
A15
A14
A13
OE#
DQ7
DQ6
Vss
Vcc
DQ5
DQ4
A12
A11
A10
A9
A8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
LY61L1288
STSOP
1
32
A16
A1
2
31
A15
A2
3
30
A14
A3
4
29
A13
CE#
5
28
OE#
DQ0
6
27
DQ7
DQ1
7
26
DQ6
VCC
8
25
VSS
VSS
9
24
VCC
DQ2
10
23
DQ5
DQ3
11
22
DQ4
WE#
12
21
A12
A4
13
20
A11
A5
14
19
A10
A6
15
18
A9
A7
16
17
A8
LY61L1288
A0
TSOP-II
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
SUPPLY CURRENT
ISB,ISB1
ICC
ICC
ICC
I/O OPERATION
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Supply Voltage
VCC
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
VIH
*2
VIL
ILI
Average Operating
Power supply Current
Standby Power
Supply Current
*1
ILO
VOH
VOL
ICC
ISB
ISB1
TEST CONDITION
-8/-10
-12/-15
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS,
Output Disabled
IOH = -4mA
IOL = 8mA
-8
-10
-12
-15
CE# = VIH, others at VIH or VIL
CE# ≧VCC - 0.2V,
Other pins at 0.2V or VCC-0.2V
Cycle time = Min.
CE# = VIL , II/O = 0mA
Other pins at VIH or VIL
MIN.
3.15
3.0
2.0
- 0.3
-1
*4
MAX.
3.6
3.6
VCC+0.5
0.8
1
UNIT
V
V
V
V
µA
-1
-
1
µA
2.4
-
80
75
70
65
3
0.4
150
120
100
90
10
V
V
mA
mA
mA
mA
mA
-
0.6
3
*5
mA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. 1mA for special request
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
TYP.
3.3
3.3
-
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM. LY61L1288 LY61L1288 LY61L1288 LY61L1288 UNIT
-8
-10
-12
-15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
tRC
8
10
12
15
ns
Address Access Time
tAA
8
10
12
15
ns
Chip Enable Access Time
tACE
8
10
12
15
ns
Output Enable Access Time
tOE
4
5
6
7
ns
Chip Enable to Output in Low-Z
tCLZ*
2
2
3
4
ns
Output Enable to Output in Low-Z tOLZ*
0
0
0
0
ns
Chip Disable to Output in High-Z tCHZ*
4
5
6
7
ns
Output Disable to Output in High-Z tOHZ*
4
5
6
7
ns
Output Hold from Address Change tOH
3
3
3
3
ns
(2) WRITE CYCLE
PARAMETER
SYM. LY61L1288 LY61L1288 LY61L1288 LY61L1288 UNIT
-8
-10
-12
-15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
8
10
12
15
ns
Address Valid to End of Write
tAW
6.5
8
10
12
ns
Chip Enable to End of Write
tCW
6.5
8
10
12
ns
Address Set-up Time
tAS
0
0
0
0
ns
Write Pulse Width
tWP
6.5
8
9
10
ns
Write Recovery Time
tWR
0
0
0
0
ns
Data to Write Time Overlap
tDW
5
6
7
8
ns
Data Hold from End of Write Time tDH
0
0
0
0
ns
Output Active from End of Write
tOW*
1.5
2
3
4
ns
Write to Output in High-Z
tWHZ*
5
6
7
8
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
OE#
tOE
tOH
tOHZ
tCHZ
tOLZ
tCLZ
Dout
High-Z
Data Valid
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
High-Z
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
(4)
tDH
Data Valid
Din
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Notes :
1.WE#, CE# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
SYMBOL
TEST CONDITION
VDR CE# ≧ VCC - 0.2V
VCC = 2.0V
CE# ≧ VCC - 0.2V
IDR
others at 0.2V or VCC - 0.2V
See Data Retention
tCDR
Waveforms (below)
tR
MIN.
2.0
TYP.
-
MAX.
3.6
UNIT
V
-
0.4
2
mA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
VDR ≧ 2.0V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.5
PACKAGE OUTLINE DIMENSION
32 pin 8mm x 13.4mm STSOP Package Outline Dimension
HD
cL
12° (2x)
16
17
12° (2x)
b
E
e
1
32
"A"
Seating Plane
D
y
12° (2X)
16
17
0.254
A2
c
A
GAUGE PLANE
A1
0
SEATING PLANE
"A" DATAIL VIEW
32
1
UNIT
SYM.
A
A1
A2
b
c
D
E
e
HD
L
L1
y
Θ
INCH(BASE)
0.049 (MAX)
0.004 ±0.002
0.039 ±0.002
0.009 ±0.002
0.006 ±0.002
0.465 ±0.008
0.315 ±0.008
0.020 (TYP)
0.528±0.008
0.02 ±0.008
0.031 ±0.005
0.003 (MAX)
o
o
0 ~5
MM(REF)
1.25 (MAX)
0.10 ±0.05
1.00 ±0.05
0.22 ±0.05
0.155 ±0.055
11.80 ±0.20
8.00 ±0.20
0.50 (TYP)
13.40 ±0.20.
0.50 ±0.20
0.8 ±0.125
0.076 (MAX)
o
o
0 ~5
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
L
12° (2X)
L1
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
32-pin 400mil TSOP-Ⅱ Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
ORDERING INFORMATION
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
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