MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE(sat) = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC Part number MIXA60WH1200TEH Backside: isolated 25 26 24 23 22 17 7 1 2 3 8 16 13 19 21 18 20 6 5 14 15 9 NTC 10 4 11 12 27 28 Features / Advantages: Applications: Package: ● Thyristor/Standard Rectifier for line frequency ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Housing: E3-Pack IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved ●_International standard package ●_RoHS compliant ●_Isolation voltage: 3600 V~ ●_Advanced power cycling Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1700 Unit V VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 100 µA VR/D = 1600 V TVJ = 150°C 20 mA VT IT = forward voltage drop min. typ. TVJ = 25°C 80 A I T = 160 A IT = TVJ = 125 °C 80 A I T = 160 A TC = 80°C I DAV bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case 180° sine R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing CJ junction capacitance PGM max. gate power dissipation average gate power dissipation (di/dt) cr critical rate of rise of current V 1.42 V 1.97 V T VJ = 150 °C 135 A TVJ = 150 °C 0.85 V 7.1 mΩ 0.65 K/W K/W 0.10 TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 595 A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.45 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.37 kA²s TVJ = 150 °C 1.77 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C t P = 30 µs T C = 150 °C 1.73 kA²s 32 t P = 300 µs PGAV V d=⅓ for power loss calculation only Ptot 1.43 1.86 TVJ = 125°C; f = 50 Hz repetitive, IT = 150 A pF 10 W 5 W 0.5 W 100 A/µs t P = 200 µs; di G /dt = 0.45 A/µs I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 45 A 500 A/µs TVJ = 125 °C 1000 V/µs (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 78 mA TVJ = -40 °C 200 mA TVJ = 125 °C 0.2 V 5 mA TVJ = 25 °C 450 mA VD = ⅔ VDRM R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 200 µs IG = V 10 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time VR = 100 V; I T = 20 A; VD = ⅔ VDRM TVJ = 150 °C IG = 0.45 A; di G /dt = 0.45 A/µs di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 150 µs 15 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient collector gate voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25°C 60 A TC = 80°C 40 A 195 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 1.5 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 35 A t d(on) turn-on delay time I C = 35 A; VGE= 15 V TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C inductive load 5.9 TVJ = 125°C VGE = ±15 V; R G = 27 Ω short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 27 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 2.1 mA mA 0.1 nA 106 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ 4.1 mJ TVJ = 125°C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 35 A VGE = ±15 V; R G = 27 Ω 5.4 V TVJ = 125°C 105 A 10 µs A 140 0.64 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 44 A TC = 80°C 29 A TVJ = 25°C 2.20 V TVJ = 125°C 1.95 V TVJ = 25°C 0.1 mA TVJ = 125°C 0.15 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 600 A/µs t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 600 V 30 A 3.5 µC 30 A TVJ = 125°C 350 ns 0.9 mJ 1.2 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20111111b MIXA60WH1200TEH preliminary Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient collector gate voltage ±30 V I C25 collector current TVJ = I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage IC = 2 I CES collector emitter leakage current VCE = VCES; VGE = 0 V I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 55 A t d(on) turn-on delay time TC = 25°C 85 A TC = 80°C 60 A 290 W 2.1 V TC = 25°C I C = 55 A; VGE = 15 V mA; VGE = VCE TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 25°C current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM inductive load 5.9 TVJ = 125°C VGE = ±15 V; R G = 15 Ω short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 15 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 6.5 V 0.5 mA mA 0.2 nA 165 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125°C VCEmax = 1200 V SCSOA V 500 VCE = 600 V; IC = 55 A VGE = ±15 V; R G = 15 Ω 5.4 TVJ = 25°C TVJ = 125°C tr typ. 25°C TVJ = 125°C 150 A 10 µs A 200 0.43 K/W K/W 0.10 Inverter Diode VRRM max. repetitive reverse voltage I F25 forward current I F80 VF forward voltage I F = 60 A TVJ = 25°C 1200 V TC = 25°C 88 A TC = 80°C 59 A 2.20 V TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved VR = 600 V -di F /dt = 1200 A/µs IF = 60 A; VGE = 0 V 0.3 TVJ = 25°C TVJ = 125°C TVJ = 125°C V 1.95 mA 1.2 mA 8 µC 60 A 350 ns 2.5 mJ 0.6 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20111111b MIXA60WH1200TEH preliminary Package Ratings E3-Pack Symbol I RMS Definition Conditions min. RMS current per terminal Tstg storage temperature -40 T VJ virtual junction temperature -40 Weight mounting torque VISOL isolation voltage Unit A 125 °C 150 °C 3 t = 1 second 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute d Spb/Apb max. 300 270 MD d Spp/App typ. XXX XX-XXXXX Logo UL Part number Ordering Standard 6 Nm 3600 V 3000 V terminal to terminal 6.0 mm terminal to backside 12.0 mm creepage distance on surface | striking distance through air 2D Data Matrix g Part number M I X A 60 WH 1200 T EH YYWWx Date Code Location Part Number MIXA60WH1200TEH = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E3-Pack Marking on Product MIXA60WH1200TEH Similar Part MIXA60WB1200TEH Package E3-Pack Delivery Mode Box Quantity 5 Code No. 509622 Voltage class 1200 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150°C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode V 0 max threshold voltage 0.85 1.1 1.2 1.1 1.22 R 0 max slope resistance * 3.9 40 27 25.1 13 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 102 0 V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Outlines E3-Pack 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 26 27 28 7 1 2 3 4 5 6 25 26 24 23 22 17 7 1 2 3 8 9 16 13 19 21 18 20 6 5 14 15 NTC 10 4 11 12 27 28 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Rectifier 150 10000 500 VR = 0 V 50 Hz 80 % VRRM 120 400 90 300 TVJ = 45°C TVJ = 45°C 1000 [A] 200 [A] 60 [A s] TVJ = 150°C TVJ =125°C 30 100 TVJ = 25°C 0 0.0 0.4 0.8 1.2 100 1.6 0 0.001 2.0 1 0.01 0.1 10 1 [s] [V] Fig.1 F orward current versus voltage drop per diode 10 TVJ =150°C 2 [ms] 2 Fig.2 Surge overload current Fig.3 I t versus time per diode 150 TVJ = 25°C 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 120 typ. Limit 90 1 [µs] [V] [A] 60 30 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0.1 1 10 100 1000 0 0 10000 [mA] 40 [mA] Fig. 4 Gate trigger characteristics 80 120 160 [°C] Fig. 5 Gate trigger delay time Fig. 6 Max. forward current versus case temperature 0.7 250 0.5 RthKA K/W = 0.2 0.6 200 0.5 150 0.4 1 0.3 100 [W] 50 2 3 0.2 5 0.1 0 0 30 60 90 120 0 25 50 75 100 125 150 [A] [°C] IXYS reserves the right to change limits, conditions and dimensions. 1 2 3 4 0.0 0.001 0.01 0.1 0.030 0.083 0.361 0.176 1 ti [s] 0.0005 0.008 0.094 0.45 10 [s] Fig.7 Power dissipation versus direct output current and ambient temperature, sine 180° © 2011 IXYS all rights reserved Ri [K/W] [K/W] 1.5 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Brake IGBT 70 70 TVJ = 125°C 25°C 60 60 50 IC 40 IC [A] 30 [A] 11 V 60 50 50 40 IC 40 30 20 20 10 10 0 70 13 V VGE = 15 V 17 V 19 V 9V [A] 30 20 TVJ = 125°C 10 0 0 1 2 3 1 2 3 4 5 5 6 7 8 Fig. 2 Typ. output characteristics Fig. 3 10 20 IC = 35 A VCE = 600 V 10 11 12 13 Typ. transfer characteristics 6 RG = 27 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 8 15 E 9 VCE [V] VCE [V] Fig. 1 Typ. output characteristics 10 TVJ = 25°C 0 0 VCE [V] VGE TVJ = 125°C IC = 35 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon Eoff 6 Eon 5 E [mJ] [mJ] 4 [V] Eoff 4 5 2 0 0 0 20 40 60 0 80 100 120 140 20 40 QG [nC] 60 80 40 60 80 RG [Ohm] IC [A] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 3 20 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 Ri ti [K/W] [s] [K/W] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.152 0.072 0.308 0.108 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Brake Diode 7 60 6 70 TVJ = 125°C VR = 600 V IC 60 A 4 30 A 40 30 A 15 A [A] [μC] 20 50 IRR Qrr [A] 60 A 60 5 40 TVJ = 125°C VR = 600 V 3 30 15 A TVJ = 125°C 25°C 2 0 20 1 0 1 2 3 10 400 600 800 1000 400 -diF /dt [A/μs] VCE [V] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 700 20 IC = 50 A VCE = 600 V 600 800 1000 -diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus di/dt 2.0 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V 600 1.6 15 60 A 500 10 400 Erec 300 [mJ] [ns] 0.8 60 A 5 30 A 200 0 50 100 150 200 600 800 1000 400 600 800 1000 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.4 0.0 400 TVJ [°C] 15 A 15 A 100 0 30 A 1.2 trr Fig. 6 Typ. recovery energy Erec versus -di/dt 2 1 ZthJC 0.1 Ri ti [K/W] [s] [K/W] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.341 0.217 0.348 0.294 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Inverter IGBT 100 100 TVJ = 125°C 25°C 80 100 13 V VGE = 15 V 17 V 19 V 80 11 V 80 60 IC 60 IC [A] 40 [A] 40 IC 60 9V [A] 40 TVJ = 125°C 20 20 20 TVJ = 25°C TVJ = 125°C 0 0 0 1 2 3 0 0 1 2 3 4 5 6 Fig. 2 Fig. 1 Typ. output characteristics 20 8 15 VGE E [mJ] 10 [V] Fig. 3 Eoff 6 5.0 [mJ] 4.5 4.0 0 150 200 0 20 40 QG [nC] 60 80 100 120 12 16 20 24 28 32 RG [Ohm] IC [A] Fig. 4 Dynamic parameters Qr, IRM versus TVJ IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2 100 Typ. transfer characteristics E 5 50 10 11 12 13 Eoff 5.5 4 0 9 6.0 Eon RG = 15 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 8 VCE [V] Typ. output characteristics 10 IC = 50 A VCE = 600 V 0 7 VCE [V] VCE [V] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b MIXA60WH1200TEH preliminary Inverter Diode 120 14 TVJ = 125°C 25°C 100 90 TVJ = 125°C VR = 600 V 12 120A 10 80 IC Qrr 60 [A] TVJ = 125°C VR = 600 V 80 60 A 8 120A 70 IRR 60 A 60 30 A [A] 50 [μC] 6 40 30 A 40 4 20 30 2 0 0 1 2 3 600 800 1000 20 600 1200 -diF /dt [A/μs] VCE [V] 4.0 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V IC = 50 A VCE = 600 V 1200 Fig. 3 Typ. peak reverse current IRM versus di/dt 700 20 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 800 600 3.2 500 2.4 120A 15 Kf 10 60 A Erec trr 400 120A [ns] 60 A 5 300 30 A 1.6 [mJ] 0.8 30 A 0 0 50 100 150 200 600 200 TVJ [°C] 800 1000 0.0 600 1200 -diF /dt [A/μs] 1000 1200 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 800 Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b