Microsemi LX5510LQ-TR Ingap hbt 2.4 â 2.5 ghz power amplifier Datasheet

LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 125 mA total DC
current with the nominal 3.3V bias.
With increased bias of 5 V EVM is ~
4% at 23 dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead quad package
(MLPQ). The compact footprint, low
profile, and excellent thermal capability
of the MLPQ package makes the
LX5510 an ideal solution for mediumgain power amplifier requirements for
IEEE 802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 125mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
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The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V 20 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
APPLICATIONS
ƒ IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free Transition DC: 0418
LX5510
LX5510LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5510LQ-TR)
This device is classified as ESD Level 0 in accordance
with JESD22-A114-B, (HBM) testing. Appropriate
ESD procedures should be observed when handling
this device.
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
*
1
2
11
1
0
9
3
4
8
7
6
N/C
RF IN
RF IN
N/C
5
N/C
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13 14 15 16
12
VB1
VB2
N/C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
x denotes respective pin designator 1, 2, or 3
VCC
N/C
Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5)
VC2
RF OUT
RF OUT
N/C
N/C
VC1
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power........................................................................................... 15dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-65°C to +150°C
* Pad is Ground
THERMAL DATA
LQ
LQ PACKAGE
(Bottom View)
N/C = No connect
Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θJC
10°C/W
50°C/W
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name
RF IN
Description
RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage.
VB1
Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
VCC
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,
resulting in a single supply voltage (referred to as Vc).
RF OUT
RF output.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor,
followed by a 8.2 nH blocking inductor at the supply side.
VC2
Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor
and 1 uF bypass capacitor.
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
PACKAGE DATA
VC1
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
Parameter
`
Symbol
Test Conditions
Min
LX5510
Typ
Max
Units
SECTION HEADER
Frequency Range
f
Power Gain at Pout = 19dBm
Gp
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
2.4
20
64GQAM / 54Mbps
Ic_total
Quiescent Current
Icq
Bias Control Reference Current
Iref
Small-Signal Gain
S21
2.5
For Icq = 65mA
GHz
dB
3.0
%
125
mA
65
mA
1.2
mA
20
dB
Gain Flatness
ΔS21
Over 100MHz
1
dB
Gain Variation Over Temperature
ΔS21
0°C to +70°C
1
dB
10
dB
Input Return Loss
S11
Output Return Loss
S22
10
dB
Reverse Isolation
S12
-40
dB
-55
dBc
Second Harmonic
Pout = 19dBm
Third Harmonic
Pout = 19dbm
-55
dBc
Total Current at Pout=23dBm
11 Mbps CCK
180
mA
11 Mbps CCK
-52
dBc
nd
2 side lobe at 23 dBm
Ramp-On Time
tON
10 ~ 90%
100
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ELECTRICAL CHARACTERISTICS
Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C, unless otherwise specified
ns
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
ELECTRICALS
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
3.3V POWER SWEEP
40
m1 m7
30
Power /dBm, Gain /dB
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
20
10
0
-10
-20
-30
400
25
350
20
300
15
250
10
200
5
150
0
100
-5
50
-50
2.2
2.4
2.6
2.8
-10
3.0
0
-25
-20
-15
freq, GHz
-10
0
5
10
Figure 2
(VC = 3.3V, VREF = 2.85V, Icq = 65mA)
(Vc = 3.3V, Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm)
3.3V EVM DATA
2.45 GHz
-5
Output Power / dBm
Figure 1
2.4 GHz
current
30
-40
2.0
gain
Current /mA
output power
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3.3V S PARAMETER DATA
m1
m7
freq=2.400GHz
freq=2.500GHz
dB(S(2,1))=20.526
dB(S(2,1))=19.355
3.3V ACP DATA
2.4 GHz
2.5 GHz
10
2.45 GHz
2.5 GHZ
-45
9
-47.5
8
ACP_30 MHz /[dBc]
EVM_PA /[%]
7
6
5
4
3
2
-50
-52.5
-55
-57.5
1
0
-60
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
Output Power /[dBm]
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 3 – EVM Data with 54Mb/s 64 QAM OFDM
Figure 4 – ACP Data with 54MB/s 64 QAM OFDM
(Vc = 3.3V, Vref = 2.85V, Icq = 65mA)
(VC = 3.3V, Vref = 2.85V, Icq = 65mA)
3.3V SPECTRUM WITH 23DBM
5V S PARAMETER
m1
freq=2.400GHz
dB(S(2,1))=21.036
40
DATA
m7
freq=2.500GHz
dB(S(2,1))=20.043
m1 m7
30
10
0
-10
-20
-30
-40
-50
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 5 – Spectrum with 23dBm 11Mb/s CCK
(Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 171mA)
Copyright © 2000
Rev. 1.0d 2005-08-18
Figure 6 – S-Parameter Data
(Vc = 5V, Vref = 2.85V, Icq = 80mA)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
GRAPHS
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
20
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
5V POWER SWEEP
5V EVM DATA WITH 54MB/S
2.45 GHz
2.5 GHz
12
16
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2.4 GHz
6
EVM_PA /[%]
5
4
3
2
1
0
0
2
4
6
8
10
14
18
20
22
24
Output Power /[dBm]
Figure 7 – Power Sweep
Figure 8 – EVM Data with 54Mb/s 64QAM OFDM
(Vc = 5V, Vref = 2.85V, Icq = 80mA, frequency=2.45 GHz, P1dB=29 dBm)
(Vc = 5V, Vref = 2.85V, Icq =80mA,)
5V ACP DATA WITH 54MB/S
2.4 GHz
2.45 GHz
5V SPECTRUM WITH 25DMB
2.5 GHZ
-45
ACP_30 MHz /[dBc]
-47.5
-50
-52.5
-55
-57.5
-60
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 9 – ACP Data with 54Mb/s 64 QAM OFDM
(Vc = 5V, Vref = 2.85V, Icq = 80mA)
Figure 10 – Spectrum with 25dBm 11Mb/s CCK
(Vc = 5V, Vref = 2.85V, Icq = 80mA, Ic = 214mA, Frequency = 2.45GHz)
GRAPHS
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5510
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
EVALUATION BOARD
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Location
C1
C2
C3
C4,C5
Recommended BOM
Value
2.2 pF (0402)
2.4 pF (0402)
3.3 pF (0402)
1 uF (0603)
L1,L2
R1
R2
TL1
TL2
8.2 nH(0402)
350 Ω (0402)
200 Ω (0402)
30/22 mil (L/W)
100/10 mil (L/W)
TL3
Substrate
60/10 mil (L/W)
10 mil GETEK
εr =3.9, tan δ = 0.01
50Ω Microstrip width: 22 mil
EVALUATION
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ 3x3
D
b
E2
L
D2
E
or
e
K
A
A1
or
Pin 1 Indicator
A3
Or
Dim
A
A1
A3
b
D
E
e
D2
E2
K
L
L1
MILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.30
1.55
1.30
1.55
0.2
0.35
0.50
0.15
INCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.051
0.061
0.051
0.061
0.008
0.012
0.020
0.006
Note:
1.
D
E2
b
L
2.
Dimensions do not include mold flash or
protrusions; these shall not exceed 0.155mm(.006”)
on any side. Lead dimension shall not include
solder coverage.
Due to multiple qualified assembly sub-contractors
either package (with different pin one indicators)
may be shipped. Package type will be consistent
within the smallest individual container.
D2
E
L1
e
A1
A
K
MECHANICALS
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
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TAPE AND REEL
Tape And Reel Specification
Ø 1.50mm
4.00mm
Top View
1.75mm
3.30mm
5.5 ± 0.05mm
12.00 ± 0.3mm
3.30mm
8.00mm
Ø 1.50mm
Part Orientation
1.10mm
Side View
0.30mm
2.2mm
Ø 13mm +1.5 -0.2
10.6mm
Ø 330mm ±0.5
Ø 97mm ±1.0
MECHANICALS
13mm +1.5
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5510
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
NOTES
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NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9
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