DXTN26070CY 70V NPN POWER SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 70V • • IC = 2A High Continuous Collector Current • Case Material: Molded Plastic, “Green” Molding Compound • ICM Up to 4A Peak Pulse Current • UL Flammability Rating 94V-0 • 2W Power Dissipation • • Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage <300 mV @ 1A • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Terminals: Finish - Matte Tin Plated Lead. Solderable per MIL-STD-202, Method 208 • SOT89 Case: SOT89 Weight: 0.052 grams (Approximate) C E B C C B E Top View Ordering Information Product DXTN26070CY-13 Notes: Device Symbol Top View Pin-Out (Note 4) Compliance Standard Marking 1T8 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT89 1T8 = Product Type Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 5 = 2015) WW = Week Code 01 - 52 DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 1 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 5) Note 5. Symbol VCBO VCEO VEBO IC ICM Value 150 70 7 2 4 Unit V V V A A Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value (Note 6) (Note 7) (Note 8) (Note 9) (Note 6) Power Dissipation PD (Note 7) (Note 8) (Note 9) Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Lead Unit 0.7 1.0 1.5 2.0 178 125 83 60 RθJA (Note 10) Operating and Storage Temperature Range W °C/W RθJL 22 TJ, TSTG -55 to +150 °C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the exposed collector pad on minimum recommended pad layout (MRP) 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 5, except the device is mounted with the exposed collector pad on 15mm x 15mm 1oz copper. 8. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper. 9. Same as Note 5, except the device is mounted with the exposed collector pad on 50mm x 50mm 1oz copper. 10. Thermal resistance from junction to solder-point (on the exposed collector pad). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 140.0 3 120.0 100.0 80.0 1oz copper 60.0 40.0 Maximum Power (W) Thermal Resistance (°C/W) Thermal Characteristics and Derating Information 2oz copper 0 500 1000 1500 2000 2500 Copper Area (sqmm) DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 T A=25°C 2oz copper 2 1oz copper 1 0 0 500 1000 1500 2000 2500 Copper Area (sqmm) 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY 15mm x 15mm 1oz FR4 PCB 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Max Power Dissipation (W) 1.2 1.0 MRP 1oz FR4 PCB 0.8 0.6 0.4 0.2 0.0 0 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Derating Curve 130 120 15mm x 15mm 1oz FR4 PCB 110 100 90 80 70 D=0.5 60 50 40 D=0.2 Single Pulse 30 D=0.05 20 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k 100 15mm x 15mm 1oz FR4 PCB Pulse Width (s) Single Pulse T A=25°C 10 1 100µ Transient Thermal Impedance 1m 10m 100m 1 1k Maximum Power (W) MRP 1oz FR4 PCB 140 120 100 D=0.5 80 40 100 100 160 MRP 1oz FR4 PCB 60 10 Pulse Width (s) Pulse Power Dissipation 180 Thermal Resistance (°C/W) 20 Temperature (°C) Maximum Power (W) Thermal Resistance (°C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information (continued) Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 Pulse Width (s) 10 100 1k Single Pulse TA=25°C 10 1 100µ Transient Thermal Impedance DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 1m 10m 100m 1 10 Pulse Width (s) 100 1k Pulse Power Dissipation 3 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 150 70 7 - 8.2 <1 V V V - - 50 10 Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 12) IEBO - <1 20 nA µA nA 260 290 300 - hFE 120 150 200 - Static Forward Current Transfer Ratio - - 500 - - VCE(sat) VBE(on) VBE(sat) - 150 780 950 300 - mV mV mV Cobo - 10 - pF Transition Frequency fT 150 220 - MHz Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time ton td tr toff ts tf - 63 33 30 420 380 40 - ns Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Note: Test Condition IC = 100 µA IC = 1mA IE = 100 µA VCB = 96V VCB = 96V, TA = +100°C VEB = 5.6V IC = 1mA, VCE = 5V IC = 10mA, VCE = 2V IC = 100mA, VCE = 2V IC = 1A, IB = 100mA IC = 1A, VCE = 5V IC = 1A, IB = 50mA VCB = 10V, f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz VCC=10V, IC =0.5A IB2 = -IB1 = 25mA 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 4 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY Typical Characteristics (@TA = +25°C, unless otherwise specified.) 1 Tamb=25°C 0.4 VCE(sat) (V) VCE(sat) (V) IC/IB=50 IC/IB=25 100m 10m 100m 150°C 0.3 100°C 0.2 25°C 0.1 IC/IB=10 IC/IB=20 10m 1m IC/IB=10 -55°C 0.0 10m 1 IC Collector Current (A) 100m VCE(sat) v IC 500 1.2 IC/IB=10 VCE=5V 150°C -55°C 400 1.0 100°C VBE(sat) (V) Typical Gain (hFE) VCE(sat) v IC 300 25°C 200 100 0 1m -55°C 0.6 150°C 100°C 0.4 10m 100m 1 0.2 1m 10 IC Collector Current (A) 10m 100m 1 IC Collector Current (A) VBE(sat) v IC 30 1.2 VCE=5V 25°C 0.8 0.6 150°C 0.4 100°C 10m 100m 1 IC Collector Current (A) 20 15 10 Cobo 5 0 10m 100m 1 Voltage(V) 10 Capacitance v Voltage VBE(on) v IC DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 f = 1MHz 25 -55°C Capacitance (pF) 1.0 VBE(on) (V) 25°C 0.8 hFE v IC 0.2 1m 1 IC Collector Current (A) 5 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. c 0 0 2 . 0 R 1 D E H SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.427 REF Z 0.30 REF All Dimensions in mm L 1 B B e 2 D X 4 ° 8 ︵ 2 E 1 H ︶ A 1 L z D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 2 X 3 Y Dimensions 1 Y G X 4 Y 2 Y Y 1 X C G X X1 X2 Y Y1 Y2 Y3 Y4 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 C DXTN26070CY Datasheet Number: DS37664 Rev.1 - 2 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DXTN26070CY IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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