ON NDPL070N10BG N-channel power mosfet Datasheet

NDPL070N10B
Power MOSFET
100V, 10.8mΩ, 70A, N-Channel
This N-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and ultra low on resistance. This device is suitable for applications with
low gate charge driving or ultra low on resistance requirements.
Features
 Low On-Resistance
 Low Gate Charge
 High Speed Switching
 100% Avalanche Tested
 Pb-Free and RoHS compliance
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VDSS
100V
RDS(on) Max
10.8 mΩ@15V
ID Max
70A
12.8 mΩ@10V
ELECTRICAL CONNECTION
N-Channel
Applications
 Battery Protection
 Motor Drive
 Primary Side Switch
 Secondary Side Synchronous Rectification
D(2)
G(1)
SPECIFICATION
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
S(3)
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
70
A
280
A
2.1
72
175
W
C
55 to +175
C
Drain Current (Pulse)
PW10s, duty cycle1%
Power Dissipation
Tc=25C
IDP
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
IS
70
A
Avalanche Energy (Single Pulse) (Note 2)
EAS
82
mJ
Lead Temperature for Soldering
TL
260
C
Purposes, 3mm from Case for 10 Seconds
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
2 : VDD=48V, L=100H, IAV=30A (Fig.1)
MARKING
070N10
TO-220-3L
B
LOTNo.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
RJC
2.08
Junction to Ambient (Note 3)
RJA
71.4
Unit
C/W
Note 3 : Insertion mounted
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 0
1
Publication Order Number :
NDPL070N10B/D
NDPL070N10B
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 4)
Value
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
Forward Transconductance
IGSS
VGS(th)
gFS
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
tr
Turn-OFF Delay Time
td(off)
55
ns
Fall Time
tf
40
ns
Total Gate Charge
Qg
26
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
Gate Threshold Voltage
Conditions
min
ID=10mA, VGS=0V
VDS=100V, VGS=0V
VGS=±20V, VDS=0V
typ
Unit
max
100
VDS=10V, ID=1mA
V
2
10
A
100
nA
4
V
VDS=10V, ID=35A
50
ID=35A, VGS=15V
9.0
10.8
m
9.8
12.8
m
ID=35A, VGS=10V
S
2,010
pF
840
pF
Crss
21
pF
td(on)
30
ns
180
ns
VDS=50V, f=1MHz
See Fig.2
VDS=48V, VGS=10V, ID=70A
IS=70A, VGS=0V
9
nC
8
nC
1.1
1.5
V
Reverse Recovery Time
95
ns
trr
See Fig.3
IS=70A, VGS=0V, di/dt=100A/s
Reverse Recovery Charge
240
nC
Qrr
Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50
10V
0V
L
VDD=48V
VIN
ID=35A
RL=1.37
VIN
G
S
10V
0V
Fig.2 Switching Time Test Circuit
G
VDD
50
VOUT
D
PW=10s
D.C.≤1%
NDPL070N10B
NDPL070N10B
P.G
Fig.3 Reverse Recovery Time Test Circuit
NDPL070N10B
D
L
G
S
VDD
Driver MOSFET
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2
50
S
NDPL070N10B
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3
NDPL070N10B
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4
NDPL070N10B
PACKAGE DIMENSIONS
unit : mm
TO-220, 3-Lead / TO-220-3L
CASE 221AU
ISSUE O
1 : Gate
2 : Drain
3 : Source
*1 : Lot indication
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NDPL070N10B
ORDERING INFORMATION
Device
NDPL070N10BG
Marking
Package
Shipping (Qty / Packing)
070N10
TO-220, 3-Lead / TO-220-3L
(Pb-Free)
50 / Tube
Note on usage : Since the NDPL070N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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