IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE(on) Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C) 10 μs Short Circuit Capability Square RBSOA Ultrasoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extended Lead TO-247AD Package Lead-Free VCE(on) typ. = 2.28V G VGE = 15V, IC = 25A, 25°C E N-channel C Benefits • • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer leads for Easier Mounting Base Part Number Package Type IRGP30B120KD-EP TO-247AD G C E TO-247AD Standard Pack Form Tube Quantity 25 Orderable Part Number IRGP30B120KD-EP Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. Units 1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 V A V W °C 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC 1 Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case www.irf.com © 2014 International Rectifier Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.42 0.83 ––– 40 ––– Units °C/W g (oz) (Fig.24) Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. 1200 ΔV(BR)CES / ΔTj Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) Gate Threshold Voltage ΔVGE(th) / ΔTj Temperature Coeff. of Threshold Voltage gfe Forward Transconductance ICES Zero Gate Voltage Collector Current VFM IGES 4.0 14.8 Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.86 1.87 2.01 Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Max. Units V V/°C 2.48 2.66 4.00 V 3.10 3.35 6.0 V Conditions Fig. VGE = 0V,Ic =250 μA VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 25A, VGE = 15V 5, 6 IC = 30A, VGE = 15V 7, 9 IC = 60A, VGE = 15V 10 IC = 25A, VGE = 15V, TJ = 125°C 11 IC = 30A, VGE = 15V, TJ = 125°C VCE = VGE, IC = 250 μA 9 ,1 0 ,1 1 ,1 2 o o mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C ) 19.0 250 675 2000 2.06 2.17 2.18 2.40 ±100 S VCE = 50V, IC = 25A, PW=80μs VGE = 0V,VCE = 1200V μA VGE = 0v, VCE = 1200V, TJ =125°C VGE = 0v, VCE = 1200V, TJ =150°C IC = 25A V IC = 30A 8 IC = 25A, TJ = 125°C IC = 30A, TJ = 125°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qgc Gate - Collector Charge (turn-on) Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Typ. 169 19 82 1066 1493 Etot Total Switching Loss 2559 3050 Eon Turn-on Switching Loss Eoff Turn-off Switching Loss 1660 2118 1856 2580 Qg Total Gate charge (turn-on) Qge Gate - Emitter Charge (turn-on) Min. Max. Units Conditions IC = 25A 254 29 nC VCC =600V VGE = 15V 123 IC = 25A, VCC = 600V 1250 1800 μJ VGE = 15V, Rg = 5Ω, L =200μH Etot Total Switching Loss 3778 4436 td(on) Turn - on delay time tr Rise time td(off) Turn - off delay time tf Fall time 65 35 230 75 Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance 50 25 210 60 2200 210 85 Reverse bias safe operating area 23 CT 1 CT 4 WF1 o TJ = 25 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V μJ WF2 13, 15 VGE = 15V, Rg = 5Ω, L =200μH CT 4 o TJ = 125 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V ns WF1 & 2 14, 16 VGE = 15V, Rg = 5Ω, L =200μH CT 4 TJ = 125oC, WF1 WF2 VGE = 0V pF VCC = 30V 22 f = 1.0 MHz TJ =150oC, Ic = 120A RBSOA Fig. 4 VCC = 1000V, VP = 1200V FULL SQUARE CT 2 Rg = 5Ω, VGE = +15V to 0 V o SCSOA Short Circuit Safe Operating Area Erec Reverse recovery energy of the diode trr Diode Reverse recovery time Irr Peak Reverse Recovery Current Le Internal Emitter Inductance 10 ---- ---- μs TJ = 150 C VCC = 900V,VP = 1200V CT 3 WF4 Rg = 5Ω, VGE = +15V to 0 V 2 www.irf.com © 2014 International Rectifier 1820 300 34 13 2400 38 μJ ns A nH TJ = 125oC VCC = 600V, Ic = 25A 1 7 ,1 8 ,1 9 20, 21 VGE = 15V, Rg = 5Ω, L =200μH CT 4 , WF3 Measured 5 mm from the package. Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature 70 320 60 280 240 50 200 (W) tot C (A) 40 P I 30 20 160 120 80 10 40 0 0 0 40 80 120 160 0 40 120 160 T C (°C) T C (°C) Fig.3 - Forward SOA T C =25°C; Tj < 150°C 1000 80 Fig.4 - Reverse Bias SOA Tj = 150°C, V GE = 15V 1000 PULSED 2μs 100 10μ s 100 (A) I 1ms I C 10 C (A) 100μ s 10 1 10ms DC 0.1 1 1 3 10 100 V CE (V) 1000 10000 www.irf.com © 2014 International Rectifier 1 Submit Datasheet Feedback 10 100 V CE (V) 1000 10000 May 29, 2014 IRGP30B120KD-EP Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300μs Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300μs 60 55 V GE = 15V 50 V GE = 12V V GE = 15V 50 V GE = 12V 45 V GE = 10V 40 40 V GE = 8V 35 35 (A) V GE = 8V 30 C 30 C 25 I I V GE = 18V 55 V GE = 10V 45 (A) 60 V GE = 18V 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 V CE (V) 5 0 6 Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300μs 60 55 45 40 V GE = 10V 45 V GE = 8V 40 (A) 35 30 6 35 30 25 20 20 15 15 10 10 5 5 0 0 0 4 5 F 25 I I C (A) 50 V GE = 12V 3 4 V CE (V) - 40°C 25°C 125°C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward Characteristic tp=300μs 60 V GE = 18V 1 1 2 3 V CE (V) 4 5 www.irf.com © 2014 International Rectifier 6 0 Submit Datasheet Feedback 1 2 V F (V) 3 4 May 29, 2014 IRGP30B120KD-EP Fig.10 - Typical V CE vs V GE Tj= 25°C 20 20 18 18 16 16 14 14 12 12 10 V CE ( V ) V CE (V) Fig.9 - Typical V CE vs V GE Tj= -40°C I CE =10A I CE =25A I CE =50A 8 10 8 6 6 4 4 2 2 0 0 6 8 10 12 14 V GE (V) 16 18 20 250 18 225 16 200 14 175 12 150 4 50 2 25 0 0 10 12 14 V GE (V) 16 18 20 18 Tj=25°C Tj=125°C C 75 8 16 100 6 6 12 14 V GE (V) 125 I CE =10A I CE =25A I CE =50A 8 10 (A) 20 10 8 I V CE ( V ) 6 Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20μs Fig.11 - Typical V CE vs V GE Tj= 125°C 5 I CE =10A I CE =25A I CE =50A 20 www.irf.com © 2014 International Rectifier Tj=125°C Tj=25°C 0 Submit Datasheet Feedback 4 8 12 V GE (V) 16 20 May 29, 2014 IRGP30B120KD-EP Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200μH; V CE =600V; Rg=22 Ω ; V GE =15V Fig.14 - Typical Switching Time vs Ic Tj=125°C; L=200μH; V CE =600V; Rg=22 Ω ;V GE =15V 8000 1000 Eon 7000 tdoff Eoff 5000 t (nS) Energy (μJ) 6000 4000 tf tr 100 3000 tdon 2000 1000 0 10 0 10 20 30 I C (A) 40 50 0 60 Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200μH; V CE =600V; I CE =25A; V GE =15V 3500 10 20 30 I C (A) 40 50 60 Fig.16 - Typical Switching Time vs Rg Tj=125°C; L=200μH; V CE =600V; I CE =25A; V GE =15V 1000 Eon 3300 tdoff 3100 2700 Eoff 2500 t (nS) Energy (uJ) 2900 tdon 100 2300 tr tf 2100 1900 1700 1500 10 0 6 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) www.irf.com © 2014 International Rectifier 0 5 Submit Datasheet Feedback 10 15 20 25 30 35 40 45 50 55 Rg (ohms) May 29, 2014 IRGP30B120KD-EP Fig.17 - Typical Diode I RR vs I F Tj=125°C 45 40 40 35 35 Rg=5 Ω 25 30 25 I RR ( A ) 30 IRR ( A ) 45 Fig.18 - Typical Diode I RR vs Rg Tj=125°C; I F =25A Rg=10 Ω 20 20 Rg=22 Ω 15 15 Rg=51 Ω 10 10 5 5 0 0 0 10 20 30 I F (A) 40 50 0 60 5 Fig.19 - Typical Diode I RR vs dI F /dt V CC =600V; V GE =15V; Tj=125°C I F =25A; Tj=125°C 7000 40 6500 Rg=5 Ω 35 22 Ω 5Ω 50A 10 Ω 51 Ω 6000 30 40A 30A QRR ( n C ) (A) 5500 25 5000 RR Rg=10 Ω 15 Rg=22 Ω 10 3500 5 3000 0 2500 500 1000 dI F / dt (A/μs) 20A 4000 Rg=51 Ω 0 25A 4500 I 20 7 Rg (ohms) Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V 45 10 15 20 25 30 35 40 45 50 55 1500 www.irf.com © 2014 International Rectifier 0 500 1000 1500 dI F / dt (A/μs) Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Fig.21 - Typ. Diode E rec vs. I F Tj=125°C 2400 5Ω 2200 10 Ω 22 Ω Energy (uJ) 2000 51 Ω 1800 1600 1400 1200 1000 800 0 10 20 30 I F (A) 40 50 60 Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600μH Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 16 10000 600V 14 C ies 800V 1000 10 V GE ( V ) CapacItance (pF) 12 C oes 8 6 100 4 C res 2 0 10 0 20 40 60 80 100 0 V CE (V) 8 www.irf.com © 2014 International Rectifier 40 80 120 160 200 Q G , Total Gate Charge (nC) Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case θ 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC DUT 0 80 V DUT 1000V Rg 1K Fig. CT.4 - Switching Loss Circuit Fig. CT.3 - S.C. SOA Circuit diode clamp / DUT Driver D C 900V L - 5V DUT / DRIVER DUT VCC Rg Fig. CT.5 - Resistive Load Circuit R= DUT VCC ICM VCC Rg 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 800 40 900 45 700 35 800 40 600 30 700 35 TEST CURRENT 90% ICE 500 25 400 20 600 30 15 200 10 25 90% test current ICE ( A ) tf 300 V CE ( V ) I CE ( A ) V CE (V) 500 400 20 tr 300 5% VCE 100 15 10% test current 200 5 5% ICE 0 0 10 5% VCE 100 5 0 0 Eoff Loss -100 -0.5 Eon Loss -5 0.0 0.5 1.0 1.5 2.0 2.5 -100 -5 4.0 4.1 4.2 t I me (μs) 4.3 4.4 4.5 t I me (μs) Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 30 1200 250 20 1000 200 -400 10 800 150 -600 0 600 100 -10 400 50 -20 200 0 -30 0 0 -200 QRR 10% Peak IRR -800 ICE ( A ) V CE ( V ) IC E( A ) V C E( V ) tRR Peak IRR -1000 -1200 -0.5 0.0 0.5 1.0 t I me (μS) 11 www.irf.com © 2014 International Rectifier -50 -10 0 10 20 30 t i me (μs) Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) TO-247AD Part Marking Information EXAMPLE: THIS IS AN IRGP30B120KD-E WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" INTERNATIONAL RECTIF IER LOGO Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER 56 035H 57 AS SEMBLY LOT CODE DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014 IRGP30B120KD-EP † Qualification information Industrial Qualification level (per JEDE C JES D47F Moisture Sensitivity Level †† guidelines) N/A TO-247AD Yes RoHS compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date Comment 5/29/2014 • Updated data sheet with IR corporate template. • Updated package outline on page 12. • Added pin assignment "G,C,E" on page 1. • Added Qualification table -Qual level "Industrial" on page 13. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014