DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) max 60V 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 8.9A 6.8A Description • 100% Unclamped Inductive Switch (UIS) test in production • 0.6mm profile – ideal for low profile applications • PCB footprint of 4mm 2 • Low On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. "Green" Device (Note 3) This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management • applications. • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • Moisture Sensitivity: Level 1 per J-STD-020 • Synchronous Rectifiers • • Boost Converters Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 • Power Management Functions • Weight: 0.007 grams (approximate) D U-DFN2020-6 G Pin1 Top View S Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT6016LFDF-7 DMT6016LFDF-13 Notes: Marking T6 T6 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information T6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMT6016LFDF Datasheet number: DS37203 Rev. 3 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D August 2014 © Diodes Incorporated DMT6016LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value 60 ±20 8.9 7.1 ID A 11.1 8.9 60 2.2 15.3 11.7 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Value 0.82 0.52 153 97 1.9 1.2 66 42 14.7 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS(ON) VSD 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.7 3.0 16 27 1.2 Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 864 282 27.1 1.35 17 8.4 3.1 4.3 3.4 5.2 12.9 6.8 22 11.1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V nA V mΩ V Test Condition VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A pF VDS = 30V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 10A nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 10A nS nC IS = 10A, dI/dt = 100A/μs IS = 10A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT6016LFDF Datasheet number: DS37203 Rev. 3 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF 30.0 30 VGS = 10V 27.0 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 24 21.0 18.0 15.0 VGS = 3.5V 12.0 9.0 3.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 15 12 9 TA = 150°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 VGS = 4.5V 0.025 0.02 0.015 VGS = 10V 0.01 0.005 0 3 6 9 12 15 18 21 24 27 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.8 VGS = 10V ID = 10A 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMT6016LFDF Datasheet number: DS37203 Rev. 3 - 2 TA = 125°C 3 of 6 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 0 1.5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 18 3 VGS = 3.0V 0.0 0 0 21 6 6.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION NEW PRODUCT 24.0 VDS = 5.0V 27 VGS = 4.0V 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.025 VGS = 10V TA = 150°C TA = 125°C 0.02 TA = 85°C 0.015 TA = 25°C 0.01 0.005 T A = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.035 VGS = 4.5V ID = 6A 0.03 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature August 2014 © Diodes Incorporated DMT6016LFDF 30 24 2.5 2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 27 ID = 1mA ID = 250µA 1.5 1 21 18 15 TA = 150°C 12 TA = 25°C TA = 125°C 9 6 TA = -55°C TA = 85°C 3 0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 T A = 125°C CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) T A = 150°C 1000 T A = 85°C 100 10 T A = 25°C 1 Ciss 1000 Coss 100 Crss 10 f = 1MHz 0.1 0 1 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited 8 10 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT 3 VDS = 30V ID = 10A 6 4 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6016LFDF Datasheet number: DS37203 Rev. 3 - 2 16 18 PW = 10s PW = 1s PW = 100ms 0.1 0.01 2 0 DC 1 PW = 10ms PW = 1ms T J(max) = 150°C T A = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.01 4 of 6 www.diodes.com PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2014 © Diodes Incorporated DMT6016LFDF 1 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT D = 0.9 D = 0.7 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 152°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.001 0.0001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions A Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. 3 A 1 A e n a l P g n i t a e S U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.110 BSC All Dimensions in mm D 3 D 3 E 2 D 2 E E L 2 e 1 Z b e X 4 Z ︵ ︶ Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 3 X Y X C Dimensions 4 Y 1 Y 2 Y 3 Y 1 X 1 n i P C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 2 X DMT6016LFDF Datasheet number: DS37203 Rev. 3 - 2 5 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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