UTC MMBT5088G-AE3-R Npn general purpose amplifier Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
„
DESCRIPTION
The devices are designed for low noise, high gain, general
purpose amplifier applications at collector currents from 1μA to
50mA.
„
„
ORDERING INFORMATION
Ordering Number
Package
MMBT5088G-AE3-R
MMBT5089G-AE3-R
SOT-23
SOT-23
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
MMBT5088
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
MMBT5089
1 of 6
QW-R206-033,B
MMBT5088/MMBT5089
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
30
Collector-Emitter voltage
VCEO
V
25
35
Collector-Base voltage
VCBO
V
30
Emitter-base voltage
VEBO
4.5
V
Collector current-continuous
IC
100
mA
Total Device Dissipation
350
mW
PD
Linear Derating Factor above TA= 25℃
2.8
mW/℃
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-40 ~ +150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are based on a maximum junction temperature of 150 degrees C.
3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (TA=25°C, unless otherwise specified)
„
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
357
℃/W
θJA
MMBT5088
MMBT5089
MMBT5088
MMBT5089
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage MMBT5088
(Note)
MMBT5089
MMBT5088
Collector-Base Breakdown Voltage
MMBT5089
MMBT5088
Collector Cut-Off Current
MMBT5089
Emitter Cutoff Current
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
BVCEO
IC=1.0mA, IB=0
BVCBO
IC=100μA, IE=0
ICBO
IEBO
30
25
35
30
VCB=20V, IE=0
VCB=15V, IE=0
VEB=3.0V, IC=0
50
50
50
100
VEB=4.5V, IC=0
V
V
V
V
nA
nA
nA
nA
ON CHARACTERISTICS
DC Current Gain
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE=5.0V, IC=100μA
hFE
VCE=5.0V, IC=1.0mA
VCE(SAT)
VBE(ON)
VCE=5.0V,
IC=10mA(Note)
IC=10mA, IB=1.0mA
IC=10mA, VCE=5.0V
fT
Collector-Base Capacitance
CCB
Emitter-Base Capacitance
CEB
Small-Signal Current Gain
MMBT5088
MMBT5089
MMBT5088
Noise Figure
MMBT5089
hFE
NF
300
400
350
450
300
400
VCE=5.0mA,
50
IC=500μA, f=20MHz
VCB=5.0V, IE=0,
f=100kHz
VEB=0.5V, IC=0,
f=100kHz
VCE=5.0V, IC=1.0mA, 350
f=1.0kHz
450
VCE=5.0V, IC=100μA,
RS=10kΩ,
f=10kHz ~ 15.7kHz
900
1200
0.5
0.8
V
V
MHz
4
pF
10
pF
1400
1800
3.0
dB
2.0
dB
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%.
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MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain, hFE
1200
Typical Pulsed Current Gain
vs Collector Current
125 C
1000
800
600
25 C
400
-40 C
200
0.25
β=10
0.2
0.15
125 C
25 C
0.1
0.05
-40 C
1
0.1
30 100
10
100
Collector Current, IC (mA)
Base-Emitter ON Voltage, VBE(on) (V)
Collector-Emitter Voltage, VBE(sat) (V)
0
0.01 0.03 0.1 0.3 1 3 10
Collector Current, IC (mA)
Collector-Emitter Saturation
Voltage vs. Collector Current
0.3
VCE=5.0V
Collector-Emitter Voltage, VCE(sat) (V)
„
10
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance vs
Reverse Bias Voltage
f=1.0MHz
5
VCB=45V
4
3
Cte
1
2
Cob
1
-0.1
25
0
50
75
100
125
150
Ambient Temperature, TA (℃)
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
0
4
8
12
16
20
Reverse Bias Voltage (V)
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Noise Figure, NF (dB)
Noise Figure, NF (dB)
Characteristics Relative To
Value At TA=25
Collector Voltage, VCE (V)
„
Source Resistance, RS (Ω)
Power Dissipation, PD (mW)
MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
QW-R206-033,B
4 of 6
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Source Resistance, RS (Ω)
10,000
5,000
10,000
2.0dB
2,000
3.0dB
1,000
4.0dB
500
6.0dB
VCE=5.0V
200 f=1.0KHz
Bandwidth=200Hz
100
1
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Source Resistance, RS (Ω)
„
10
8.0dB
100
1,000
3.0dB
1,000
4.0dB
500
6.0dB
VCE=5.0V
200 f=10KHz
Bandwidth=2.0KHz
100
1
10
8.0dB
100
1,000
Collector Current, IC (µA)
Characteristics Relative To
Value (IC=1mA)
Characteristics Relative To Value
(VCE=5V)
Source Resistance, RS (Ω)
Characteristics Relative To
Value (TA=25℃)
2.0dB
2,000
Collector Current, IC (µA)
dB
5.0
B
6.0d
1.0dB
5,000
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QW-R206-033,B
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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