TI1 LME49710NA/NOPB High-performance, high-fidelity audio operational amplifier Datasheet

LME49710
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SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013
LME49710 High-Performance, High-Fidelity Audio Operational Amplifier
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FEATURES
DESCRIPTION
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The LME49710 is part of the ultra-low distortion, lownoise, high-slew-rate operational amplifier series
optimized and fully specified for high-performance,
high-fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49710 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49710
combines extremely low-voltage noise density
(2.5nV/Hz) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications. To ensure that the most challenging
loads are driven without compromise, the LME49710
has a high slew rate of ±20V/μs and an output current
capability of ±26mA. Further, dynamic range is
maximized by an output stage that drives 2kΩ loads
to within 1V of either power supply voltage and to
within 1.4V when driving 600Ω loads.
1
2
Easily Drives 600Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
SOIC, PDIP, and TO-99 Packages
APPLICATIONS
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Ultra High-Quality Audio Amplification
High-Fidelity Preamplifiers
High-Fidelity Multimedia
State-of-the-Art Phono Pre Amps
High-Performance Professional Audio
High-Fidelity Equalization and Crossover
Networks
High-Performance Line Drivers
High-Performance Line Receivers
High-Fidelity Active Filters
KEY SPECIFICATIONS
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Power Supply Voltage Range: ±2.5V to ±17V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2kΩ: 0.00003% (typ)
– RL = 600Ω: 0.00003% (typ)
Input Noise Density: 2.5nV/√Hz (typ)
Slew Rate: ±20V/μs (typ)
Gain Bandwidth Product: 55MHz (typ)
Open Loop Gain (RL = 600Ω): 140dB (typ)
Input Bias Current: 7nA (typ)
Input Offset Voltage: 0.05mV (typ)
DC Gain Linearity Error: 0.000009%
The LME49710's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.05mV) give the amplifier
excellent operational amplifier DC performance.
The LME49710 has a wide supply range of ±2.5V to
±17V. Over this supply range the LME49710’s input
circuitry maintains excellent common-mode and
power supply rejection, as well as maintaining its lowinput bias current. The LME49710 is unity gain
stable. The Audio Operational Amplifier achieves
outstanding AC performance while driving complex
loads with values as high as 100pF.
The LME49710 is available in an 8-lead narrow body
SOIC, an 8-lead PDIP, and an 8-lead TO-99.
Demonstration boards are available for each
package.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
LME49710
SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013
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TYPICAL APPLICATION
150:
3320:
150:
3320:
26.1 k:
+
909:
-
-
LME49710
+
INPUT
LME49710
+
3.83 k:
+
100:
22 nF//4.7 nF//500 pF
10 pF
47 k:
OUTPUT
47 nF//33 nF
Note: 1% metal film resistors, 5% polypropylene capacitors
Figure 1. Passively Equalized RIAA Phono Preamplifier
CONNECTION DIAGRAMS
Figure 2. 8-Lead SOIC (D Package)
8-Lead PDIP (P Package)
NC
8
+
NC
1
INVERTING
INPUT
7
2
NON-INVERTING
INPUT
V
6
3
5
OUTPUT
NC
4
-
V
Figure 3. 8-Lead TO-99 (LMC Package)
2
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Power Supply Voltage (VS = V+ - V-)
36V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit
(4)
Continuous
Power Dissipation
Internally Limited
ESD Susceptibility (5)
ESD Susceptibility
2000V
(6)
200V
Junction Temperature
150°C
Thermal Resistance
θJA (D)
145°C/W
θJA (P)
102°C/W
θJA (LMC)
150°C/W
θJC (LMC)
35°C/W
Temperature Range (TMIN ≤ TA ≤ TMAX)
–40°C ≤ TA ≤ 85°C
Supply Voltage Range
±2.5V ≤ VS ≤ ± 17V
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Amplifier output connected to GND, any number of amplifiers within a package.
Human body model, 100pF discharged through a 1.5kΩ resistor.
Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
(3)
(4)
(5)
(6)
ELECTRICAL CHARACTERISTICS (1) (2)
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified.
Symbol
THD+N
Total Harmonic Distortion + Noise
LME49710
Typical (3)
Limit (4) (5)
Units
(Limits)
AV = 1, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
0.00003
0.00003
0.00009
% (max)
% (max)
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
0.00005
Parameter
Conditions
IMD
Intermodulation Distortion
GBWP
Gain Bandwidth Product
55
45
MHz (min)
SR
Slew Rate
±20
±15
V/μs (min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
ts
Settling time
en
in
(1)
(2)
(3)
(4)
(5)
% (max)
10
MHz
AV = 1, 10V step, CL = 100pF
0.1% error range
1.2
μs
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.34
0.65
μVRMS
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
2.5
6.4
4.7
nV/√Hz
nV/√Hz
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
pA/√Hz
pA/√Hz
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Typical specifications are specified at +25ºC and represent the most likely parametric norm.
Tested limits are specified to AOQL (Average Outgoing Quality Level).
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
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ELECTRICAL CHARACTERISTICS(1)(2) (continued)
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
LME49710
Typical
±0.05
(3)
Limit (4) (5)
Units
(Limits)
±0.7
mV (max)
VOS
Offset Voltage
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
40°C ≤ TA ≤ 85°C
0.2
PSRR
Average Input Offset Voltage Shift vs
Power Supply Voltage
ΔVS = 20V (6)
125
110
dB (min)
IB
Input Bias Current
VCM = 0V
7
72
nA (max)
ΔIOS/ΔTemp
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
IOS
Input Offset Current
VCM = 0V
Common-Mode Input Voltage Range
VIN-CM
CMRR
Common-Mode Rejection
–10V<VCM<10V
Differential Input Impedance
ZIN
Common Mode Input Impedance
AVOL
Open Loop Voltage Gain
VOUTMAX
IOUT
Maximum Output Voltage Swing
Output Current
0.1
5
65
nA (max)
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
120
110
dB (min)
30
kΩ
–10V<VCM<10V
1000
MΩ
–10V<VOUT<10V, RL = 600Ω
140
–10V<VOUT<10V, RL = 2kΩ
140
–10V<VOUT<10V, RL = 10kΩ
140
dB
125
dB
dB
RL = 600Ω
±13.6
RL = 2kΩ
±14.0
V
RL = 10kΩ
±14.1
V
RL = 600Ω, VS = ±17V
±26
±12.5
±23
V
mA (min)
+53
–42
mA
mA
0.01
13
Ω
Ω
%
Short Circuit Current
ROUT
Output Impedance
fIN = 10kHz
Closed-Loop
Open-Loop
CLOAD
Capacitive Load Drive Overshoot
100pF
16
IS
Quiescent Current
IOUT = 0mA
4.8
4
nA/°C
+14.1
–13.9
IOUT-CC
(6)
μV/°C
5.5
mA (max)
PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.
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TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Output Voltage
VCC = 12V, VEE = –12V, RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
0.00001
10m
10 20
100m
Figure 5.
THD+N vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
THD+N (%)
0.001
THD+N (%)
10 20
Figure 4.
0.0005
0.0002
0.001
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
0.00001
10m
10 20
100m
VRMS
1
10 20
VRMS
Figure 6.
Figure 7.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL = 600Ω
THD+N vs Output Voltage
VCC = 12V, VEE = –12V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
1
VRMS
VRMS
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
10 20
0.00001
10m
VRMS
100m
1
10 20
VRMS
Figure 8.
Figure 9.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
THD+N vs Output Voltage
VCC = 17V, VEE = –17V, RL = 600Ω
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
0.00001
10m
100m
1
10 20
100m
Figure 11.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL = 10kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V, RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.0005
0.0002
0.001
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
100m
1
0.00001
10m
10 20
100m
VRMS
1
10 20
VRMS
Figure 12.
Figure 13.
THD+N vs Output Voltage
VCC = 17V, VEE = –17V, RL = 10kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
10 20
Figure 10.
0.00001
10m
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
0.00001
10m
100m
1
10 20
VRMS
100m
1
10 20
VRMS
Figure 14.
6
1
VRMS
THD+N (%)
THD+N (%)
VRMS
Figure 15.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 17V, VEE = –17V,
RL = 2kΩ, VOUT = 3VRMS
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
THD+N vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ, VOUT = 3VRMS
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
Figure 16.
Figure 17.
THD+N vs Frequency
VCC = 15V, VEE = –15V,
RL = 600Ω, VOUT = 3VRMS
THD+N vs Frequency
VCC = 17V, VEE = –17V,
RL = 600Ω, VOUT = 3VRMS
0.01
0.01
0.005
0.005
0.002
0.002
0.001
THD+N (%)
0.001
THD+N (%)
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
50 100 200 500 1k 2k
0.00001
20
5k 10k 20k
FREQUENCY (Hz)
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
Figure 18.
Figure 19.
THD+N vs Frequency
VCC = 15V, VEE = –15V,
RL = 10kΩ, VOUT = 3VRMS
THD+N vs Frequency
VCC = 17V, VEE = –17V,
RL = 10kΩ, VOUT = 3VRMS
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.0005
THD+N (%)
THD+N (%)
0.001
0.0002
0.0001
0.0005
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 20.
Figure 21.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 12V, VEE = –12V, RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
IMD (%)
IMD (%)
IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
5 10
0.00001
100m
20
500m
Figure 23.
IMD vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0002
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
20
0.0005
0.0001
1
5 10
20
0.00001
100m
500m
VRMS
1
2
VRMS
Figure 24.
Figure 25.
IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL = 600Ω
IMD vs Output Voltage
VCC = 12V, VEE = –12V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
IMD (%)
IMD (%)
5 10
Figure 22.
IMD (%)
IMD (%)
VRMS
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
5 10
20
0.00001
100m
500m
1
5 10
20
VRMS
VRMS
Figure 26.
8
1
VRMS
Figure 27.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
IMD (%)
IMD (%)
IMD vs Output Voltage
VCC = 17V, VEE = –17V, RL = 600Ω
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
5
10
20
0.00001
100m
500m
2
Figure 28.
Figure 29.
IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL = 10kΩ
IMD vs Output Voltage
VCC = 12V, VEE = –12V, RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
5 10
20
0.00001
100m
VRMS
500m
1
5 10
20
VRMS
Figure 30.
Figure 31.
IMD vs Output Voltage
VCC = 17V, VEE = –17V, RL = 10kΩ
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V, RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
IMD (%)
IMD (%)
1
VRMS
IMD (%)
IMD (%)
VRMS
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
5
10
20
0.00001
100m
500m
1
2
VRMS
VRMS
Figure 32.
Figure 33.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Voltage Noise Density vs Frequency
Current Noise Density vs Frequency
100
VS = 30V
VCM = 15V
10
2.45 nV/ Hz
CURRENT NOISE (pA/ Hz)
VOLTAGE NOISE (nV/ Hz)
100
VS = 30V
VCM = 15V
10
1.5 pA/ Hz
1
1
1
10
100
1k
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 34.
Figure 35.
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 2kΩ, VRIPPLE = 200mVpp
40
-40
50
-50
60
-60
70
PSRR (dB)
PSRR (dB)
-70
-80
-90
-100
120
-120
130
-130
100
1k
140
20
10k 20k
10k 20k
Figure 36.
Figure 37.
PSRR+ vs Frequency
VCC = 12V, VEE = –12V,
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 12V, VEE = –12V,
RL = 2kΩ, VRIPPLE = 200mVpp
40
-50
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
10k 20k
140
20
FREQUENCY (Hz)
100
1k
10k 20k
FREQUENCY (Hz)
Figure 38.
10
1k
FREQUENCY (Hz)
-40
-140
20
100
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
90
100
110
-110
-140
20
80
Figure 39.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
40
-50
50
-60
60
-70
70
PSRR (dB)
-40
-80
-90
-100
90
100
110
-120
120
-130
130
100
1k
140
20
10k 20k
Figure 41.
PSRR+ vs Frequency
VCC = 17V, VEE = –17V,
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 17V, VEE = –17V,
RL = 2kΩ, VRIPPLE = 200mVpp
40
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
140
20
10k 20k
100
1k
10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 42.
Figure 43.
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 600Ω, VRIPPLE = 200mVpp
40
T
-50
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
-140
20
10k 20k
Figure 40.
-50
-40
1k
FREQUENCY (Hz)
-40
-140
20
100
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
80
-110
-140
20
PSRR (dB)
PSRR- vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR (dB)
PSRR (dB)
PSRR+ vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ, VRIPPLE = 200mVpp
100
1k
10k 20k
140
20
100
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 44.
Figure 45.
10k 20k
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
40
-50
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
140
20
10k 20k
Figure 47.
PSRR+ vs Frequency
VCC = 15V, VEE = –15V,
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V,
RL = 600Ω, VRIPPLE = 200mVpp
40
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
140
20
10k 20k
100
1k
10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 48.
Figure 49.
PSRR+ vs Frequency
VCC = 17V, VEE = –17V,
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 17V, VEE = –17V,
RL = 600Ω, VRIPPLE = 200mVpp
-40
40
-50
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
10k 20k
140
20
FREQUENCY (Hz)
100
1k
10k 20k
FREQUENCY (Hz)
Figure 50.
12
10k 20k
Figure 46.
-50
-140
20
1k
FREQUENCY (Hz)
-40
-140
20
100
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
PSRR (dB)
-40
-140
20
PSRR (dB)
PSRR- vs Frequency
VCC = 12V, VEE = –12V,
RL = 600Ω, VRIPPLE = 200mVpp
PSRR (dB)
PSRR (dB)
PSRR+ vs Frequency
VCC = 12V, VEE = –12V,
RL = 600Ω, VRIPPLE = 200mVpp
Figure 51.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
-40
-50
-50
-60
-60
-70
-70
PSRR (dB)
PSRR (dB)
-40
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 10kΩ, VRIPPLE = 200mVpp
-80
-90
-100
-80
-90
-100
-110
-110
-120
-120
-130
-130
-140
20
100
1k
-140
20
10k 20k
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 10kΩ, VRIPPLE = 200mVpp
100
PSRR (dB)
Figure 53.
PSRR+ vs Frequency
VCC = 12V, VEE = –12V,
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 12V, VEE = –12V,
RL = 10kΩ, VRIPPLE = 200mVpp
50
-60
60
-70
70
PSRR (dB)
40
-50
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
100
1k
140
20
10k 20k
100
1k
10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 54.
Figure 55.
PSRR+ vs Frequency
VCC = 15V, VEE = –15V,
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V,
RL = 10kΩ, VRIPPLE = 200mVpp
-40
40
-50
50
-60
60
-70
70
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
-140
20
10k 20k
FREQUENCY (Hz)
-40
-140
20
1k
Figure 52.
PSRR (dB)
PSRR (dB)
FREQUENCY (Hz)
100
1k
10k 20k
140
20
100
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 56.
Figure 57.
10k 20k
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 17V, VEE = –17V,
RL = 10kΩ, VRIPPLE = 200mVpp
-40
40
-50
50
-60
60
-70
70
PSRR (dB)
PSRR (dB)
PSRR+ vs Frequency
VCC = 17V, VEE = –17V,
RL = 10kΩ, VRIPPLE = 200mVpp
-80
-90
-100
80
90
100
-110
110
-120
120
-130
130
-140
20
100
140
20
10k 20k
1k
100
CMRR (dB)
Figure 59.
CMRR vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ
CMRR vs Frequency
VCC = 12V, VEE = –12V,
RL = 2kΩ
-50
-50
CMRR (dB)
0
-100
100
1k
10k
-100
-150
10
100k
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 60.
Figure 61.
CMRR vs Frequency
VCC = 17V, VEE = –17V,
RL = 2kΩ
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 2kΩ
0
0
-50
-50
-100
-150
10
14
Figure 58.
0
-150
10
10k 20k
1k
FREQUENCY (Hz)
CMRR (dB)
CMRR (dB)
FREQUENCY (Hz)
100
1k
10k
100k
100k
-100
-150
10
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 62.
Figure 63.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 12V, VEE = –12V,
RL = 600Ω
0
0
-50
-50
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VCC = 15V, VEE = –15V,
RL = 600Ω
-100
-150
10
100
1k
10k
-100
-150
10
100k
100
Figure 65.
CMRR vs Frequency
VCC = 17V, VEE = –17V,
RL = 600Ω
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 600Ω
0
-50
-50
-100
100
1k
10k
-150
10
100k
100
10k
Figure 67.
CMRR vs Frequency
VCC = 15V, VEE = –15V,
RL = 10kΩ
CMRR vs Frequency
VCC = 12V, VEE = –12V,
RL = 10kΩ
0
0
-50
-50
CMRR (dB)
CMRR (dB)
1k
-100
1k
10k
100k
FREQUENCY (Hz)
Figure 66.
100
100k
-100
FREQUENCY (Hz)
-150
10
10k
Figure 64.
0
-150
10
1k
FREQUENCY (Hz)
CMRR (dB)
CMRR (dB)
FREQUENCY (Hz)
100k
-100
-150
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 68.
Figure 69.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0
0
-50
-50
-100
-100
-150
10
100
1k
10k
-150
10
100k
100
100k
Figure 70.
Figure 71.
Output Voltage vs Supply Voltage
RL = 2kΩ, THD+N = 1%
Output Voltage vs Supply Voltage
RL = 600Ω, THD+N = 1%
12
12
10
10
8
6
4
8
6
4
2
0
2.5
4.5
6.5
0
2.5
8.5 10.5 12.5 14.5 16.5 18.5
4.5
SUPPLY VOLTAGE (V)
6.5
8.5 10.5 12.5 14.5 16.5 18.5
SUPPLY VOLTAGE (V)
Figure 72.
Figure 73.
Output Voltage vs Supply Voltage
RL = 10kΩ, THD+N = 1%
Output Voltage vs Load Resistance
VCC = 15V, VEE = –15V, THD+N = 1%
12
12
10
11
OUTPUT (VRMS)
OUTPUT VOLTAGE (V)
10k
FREQUENCY (Hz)
2
8
6
4
0
2.5
10
9
8
2
4.5
6.5
8.5 10.5 12.5 14.5 16.5 18.5
7
400
600
800
1k
2k
10k
LOAD RESISTANCE (:
SUPPLY VOLTAGE (V)
Figure 74.
16
1k
FREQUENCY (Hz)
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V,
RL = 10kΩ
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VCC = 17V, VEE = –17V,
RL = 10kΩ
Figure 75.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Load Resistance
VCC = 2.5V, VEE = –2.5V, THD+N = 1%
15
1.25
14
1.00
OUTPUT (VRMS)
OUTPUT (VRMS)
Output Voltage vs Load Resistance
VCC = 17V, VEE = –17V, THD+N = 1%
13
12
11
10
400
0.75
0.5
0.25
600
800
1k
2k
0.00
400
10k
LOAD RESISTANCE (:
600
800
1k
2k
10k
LOAD RESISTANCE (:
Figure 77.
Small-Signal Transient Response
AV = –1, CL = 100pF
Large-Signal Transient Response
AV = –1, CL = 100pF
50 mV/div
5V/div
Figure 76.
1 Ps/div
200 ns/div
Figure 78.
Figure 79.
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NOISE MEASUREMENT CIRCUIT
A.
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 80. Total Gain: 115 dB at f = 1 kHz
Input Referred Noise Voltage: en = V O/560,000 (V)
RIAA Preamp Voltage Gain
RIAA Deviation vs Frequency
VIN = 10mV, AV = 35.0dB, f = 1kHz
Figure 81.
18
Flat Amp Voltage Gain vs Frequency
VO = 0dB, AV = 80.0dB, f = 1kHz
Figure 82.
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APPLICATION HINTS
The LME49710 is a high-speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straight forward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
TYPICAL APPLICATIONS
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 83. NAB Preamp
Figure 84. NAB Preamp Voltage Gain vs Frequency
VIN = 10mV, 34.5dB, f = 1kHz
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VO = V1–V2
Figure 85. Balanced to Single Ended Converter
VO = V1 + V2 − V3 − V4
Figure 86. Adder/Subtracter
Figure 87. Sine Wave Oscillator
20
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Illustration is f0 = 1 kHz
Figure 88. Second-Order High-Pass Filter
(Butterworth)
Illustration is f0 = 1 kHz
Figure 89. Second-Order Low-Pass Filter
(Butterworth)
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Figure 90. State Variable Filter
Figure 91. Line Driver
22
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Figure 92. Tone Control
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 93. RIAA Preamp
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Illustration is:
V0 = 101(V2 − V1)
Figure 94. Balanced Input Mic Amp
24
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APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low-residual distortion produced by LME49710 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49710’s low-residual distortion is an input referred internal error. As shown in Figure 95, adding the 10Ω
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the
value of R1 low as shown in Figure 95.
This technique is verified by duplicating the measurements with high closed-loop gain and/or making the
measurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described
circuit connected to an Audio Precision System Two Cascade.
R2
1000:
LME49710
R1
10:
Distortion Signal Gain = 1+(R2/R1)
+
Analyzer Input
Generator Output
Audio Precision
System Two
Cascade
Actual Distortion = AP Value/100
Figure 95. THD+N and IMD Distortion Test Circuit
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REVISION HISTORY
26
Rev
Date
1.0
11/16/07
Initial release.
1.1
12/12/06
Added the Typical Performance curves.
1.2
01/15/07
Added more curves and input some
text edits.
1.3
03/09/07
Fixed graphics 20210489 and 90.
C
04/04/13
Changed layout of National Data Sheet
to TI format.
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Description
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Product Folder Links: LME49710
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jun-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LME49710HA/NOPB
ACTIVE
TO-99
LMC
8
20
Green (RoHS
& no Sb/Br)
POST-PLATE
Level-1-NA-UNLIM
-40 to 85
LME49710MA/NOPB
LIFEBUY
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
L49710
MA
LME49710MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
L49710
MA
LME49710NA/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
CU SN
Level-1-NA-UNLIM
-40 to 85
LME
49710NA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jun-2016
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LME49710MAX/NOPB
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.4
2.0
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LME49710MAX/NOPB
SOIC
D
8
2500
349.0
337.0
45.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
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