Diodes DMP2170U-7 Low on-resistance Datasheet

DMP2170U
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
90mΩ @ VGS = -4.5V
-3.1A
250mΩ @ VGS = -2.5V
-1.8A
-20V
Description and Applications

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.

Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Battery Charging

Power Management Functions

DC-DC Converters


Terminals Connections: See Diagram Below
Portable Power Adaptors

Weight: 0.009 grams (Approximate)
D
SOT23
D
G
S
G
S
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP2170U-7
SOT23
3,000/Tape & Reel
DMP2170U-13
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
2017
E
Feb
2
DMP2170U
Document number: DS38558 Rev. 1 - 2
7U = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: D = 2016)
M = Month (ex: 9 = September)
YM
P65
7U
Mar
3
2018
F
Apr
4
2019
G
May
5
Jun
6
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2020
H
Jul
7
2021
I
Aug
8
Sep
9
2022
J
Oct
O
2023
K
Nov
N
Dec
D
June 2016
© Diodes Incorporated
DMP2170U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C
Steady
State
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Continuous Drain Current (Note 6) VGS = -4.5V
ID
IS
IDM
Value
-20
±12
-3.1
-2.5
-1.25
-13
Units
V
V
Value
0.78
163
1.28
99
Unit
W
°C/W
W
°C/W
-55 to +150
°C
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Steady State
Steady State
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-1.0
±100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(TH)
-0.4
-1.01
-1.25
V
RDS(ON)
-
62
92
101
90
180
250
mΩ
VSD
-
-0.8
-1.1
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
-
303
46
37
16
3.6
7.8
0.6
1.1
5.4
18.3
16.2
13.6
5.5
1.23
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -10V, ID = -1.5A
VDD = -10V, VGS = -4.5V,
ID = -3.5A, RG = 6Ω
IS = -2.0A, dI/dt = -100A/μs
IS = -2.0A, dI/dt = -100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2170U
Document number: DS38558 Rev. 1 - 2
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© Diodes Incorporated
DMP2170U
10.0
10
VDS = -5V
VGS = -3.0V
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8.0
VGS = -2.5V
6.0
VGS = -4.5V
VGS = -8.0V
4.0
VGS = -2.0V
6
4
TJ = 150oC
2
2.0
TJ = 125oC
TJ = 25oC
VGS = -1.5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.16
0.14
VGS = -2.5V
0.12
0.1
0.08
0.06
VGS = -4.5V
0.04
0.8
3
0.02
0
1
1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
ID = -3.5A
0.1
0.05
0
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
12
Figure 4. Typical Transfer Characteristic
0.11
1.8
VGS = -4.5V
TJ =
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TJ = -55oC
0
0.0
0
TJ = 85oC
150oC
0.09
TJ = 125oC
TJ = 85oC
0.07
TJ = 25oC
0.05
TJ =
-55oC
1.6
VGS = -4.5V, ID = -3.5A
1.4
1.2
1
VGS = -2.5V, ID = -2.6A
0.8
0.6
0.03
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current
and Junction Temperature
DMP2170U
Document number: DS38558 Rev. 1 - 2
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-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
June 2016
© Diodes Incorporated
0.16
1.4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
DMP2170U
0.14
VGS = -2.5V, ID = -2.6A
0.12
0.1
0.08
0.06
VGS = -4.5V, ID = -3.5A
0.04
1.2
ID = -1mA
1
0.8
ID = -250µA
0.6
0.4
0.02
-50
-25
0
25
50
75
100
125
-50
150
0
25
50
75
100
125
150
1000
10
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
IS, SOURCE CURRENT (A)
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
8
6
4
TJ = 150oC
2
TJ = 125oC
TJ = 85oC
TJ = 25oC
f = 1MHz
Ciss
100
Coss
Crss
TJ = -55oC
10
0
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
5
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
100
RDS(ON)
Limited
PW = 100ms
ID, DRAIN CURRENT (A)
8
6
VGS (V)
15
4
VDS = -10V, ID = -1.5A
10
2
4
6
Qg (nC)
Figure 11. Gate Charge
DMP2170U
Document number: DS38558 Rev. 1 - 2
DC
PW = 10s
0.1
0.01
0
PW = 1ms
PW =100µs
1
2
0
PW = 10ms
8
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TJ(Max) = 150℃
TC = 25℃
PW = 1s
Single Pulse
DUT on 1*MRP Board
VGS = -4.5V
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
June 2016
© Diodes Incorporated
DMP2170U
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA (t) = r(t) * RθJA
RθJA = 163℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMP2170U
Document number: DS38558 Rev. 1 - 2
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DMP2170U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
C
Y1
X
DMP2170U
Document number: DS38558 Rev. 1 - 2
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
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DMP2170U
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2016, Diodes Incorporated
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DMP2170U
Document number: DS38558 Rev. 1 - 2
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