MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable Features and Benefits Application Examples 0 Operating Voltage from 1.6 to 3.6V 0 Latching Output Behavior 0 Micropower Consumption 48uA@3V ; [email protected] 0 Advanced Power Manageability through dedicated “Enable” pin 0 Ultra High Sensitivity Hall Sensor 0 Push-Pull Output 0 Minuature & Ultra Thin CSP package (2mm x 1.5mm ; 0.4mm thickness) 0 “Green” and “Pb-Free” Compliant Package 0 Battery-operated / Handheld Appliances 0 Rotary or Linear Contact-Less Encoders 0 Scroll/Jog Wheel, Trackball (Mobile Phones, Portable Media Players, Notebooks, Computer Mice, Camcorders, Cameras,…) 0 Home/Industrial Metering Equipment (Wafer Flow Meter) Ordering Code Product Code Temperature Code MLX92213 E Package Code LD Option Code AAA-000 Legend: Temperature Code: Package Code: Option Code: Packing Form: E for Temperature Range -40°C to 85°C LD for UTQFN6 xxx-000: Standard Version RE for Reel Ordering example: MLX92213ELD-AAA-000-RE 390109221302 Rev 003 Page 1 of 10 Packing Form Code RE Data Sheet Mar/12 ML LX92213 MicroPower & Low-Voltage Hall Effect Latch atch with Enable 1 Functional Diagram 2 General Description Voltage Latch The MLX92213 Micropower Low-V Hall effect sensor IC is fabricated in mixed signal CMOS technology. It incorporates ates advanced Correlated Double Sampling (CDS) techniques to provide accurate and stable magne agnetic switching points. In order to save power, the internall Timing Logic alternates Awake and Sleep modes, m thus significantly reducing the power cons sumption. The magnetic flux density is periodica ally evaluated against predefined thresholds. If the flux f density is above/below the BOP/BRP thresholds, then the Output changes its state accordinglly. During the Sleep mode the Output is latched in n its previous 390109221302 Rev 003 state. The design has been optimized for applications requiring extended nded operating lifetime in battery-powered systems. The EN pin adds flexibility by enabling exterrnal control of the Micropower Period and Duty C Cycle. The Push-pull Output of the MLX92213 will be latched in Low state in the presence of a sufficiently strong South magn agnetic field (B > BOP) facing the marked side of the package. The Output will be latched in High state in the presence of a sufficiently strrong North magnetic field (B < BRP). Page 2 of 10 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable Table of Contents 1 Functional Diagram ........................................................................................................ 2 2 General Description ........................................................................................................ 2 3 Glossary of Terms .......................................................................................................... 4 4 Absolute Maximum Ratings ........................................................................................... 4 5 Pinout............................................................................................................................... 4 6 Output Behavior vs. Magnetic Pole ............................................................................... 4 7 General Electrical Specifications .................................................................................. 5 8 Magnetic Specifications ................................................................................................. 6 9 Application Section ........................................................................................................ 6 9.1 Application Schematics..............................................................................................................................6 9.2 Recommendation / Comments ..................................................................................................................6 10 Principle of Operation................................................................................................... 6 11 Performance Graphs .................................................................................................... 7 11.1 Magnetic Threshold vs. Temperature ......................................................................................................7 11.2 Magnetic Threshold vs. Supply Voltage ..................................................................................................7 11.3 Average Supply Current vs. Temperature ...............................................................................................7 11.4 Average Supply Current vs. Supply Voltage ...........................................................................................7 11.5 Supply Current vs. Temperature..............................................................................................................7 11.6 Supply Current vs. Supply Voltage ..........................................................................................................7 12 Standard information regarding manufacturability of Melexis products with different soldering processes........................................................................................... 8 13 ESD Precautions ........................................................................................................... 8 14 LD Package (UTQFN-6L)............................................................................................... 9 15 Disclaimer.................................................................................................................... 10 390109221302 Rev 003 Page 3 of 10 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 3 Glossary of Terms Gauss, milliTesla (mT), Units of magnetic flux density : 10 Gauss = 1mT 4 Absolute Maximum Ratings Parameter Supply Voltage Supply Current EN Input Voltage EN Input Current Output Voltage Output Current Operating Temperature Range Storage Temperature Range Symbol VDD IDD VIN IIN VOUT IOUT TA TS Value 5 ±10 5 ±10 5 ±10 -40 to 85 -50 to 150 Units V mA V mA V mA ° ° C Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability. 5 Pinout Pin Name VDD GND OUT EN NC Function Power Supply Ground Push-Pull Output Enable (1) Not Connected Pin № 3 4, E-pad (2) 1 6 2, 5 Table 2: Pin definitions and descriptions Note 1: EN has to be connected to VDD when External Micropower Control is not used LD Package Note 2: Exposed Pad on LD package is connected to Ground 6 Output Behavior vs. Magnetic Pole DC Operating Parameters TA = -40 oC to 85oC, VDD = 1.6V to 3.6V Parameter Test Conditions OUT South pole B > BOP Low North pole B < BRP High Table 3: Output behavior versus magnetic pole (3) Note 3: The magnetic pole is applied facing the package top 390109221302 Rev 003 Page 4 of 10 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 7 General Electrical Specifications o Operating Parameters: T A = -40 to 85 C, V DD = 1.6V to 3.6V, unless otherwise specified Parameter Symbol Test Conditions Min Typ Supply Voltage VDD Operating 1.6 EN = VDD, VDD=3V 48 Average Supply Current IDDav EN = VDD, VDD=1.8V 36 Awake Supply Current IDDaw EN = VDD, IOUT = 0mA Sleep Supply Current IDDsl EN = VDD, IOUT = 0mA Standby Supply Current IDDsb EN = 0 High Level Output Voltage Low Level Output Voltage VOH VOL (4) VPO Power-On Output State Output Characteristics B < BRP, IOUT = -1mA B > BOP, IOUT = 1mA VDD-0.4 - VDD-0.2 0.2 Max 3.6 86 70 4 4.5 1 Units V µA µA mA µA µA 0.4 V V High Enable Pin Characteristics 0.1*VDD+1 -1 5 TAW + 0.1 EN Input High Voltage EN Input Low Voltage EN Input Current EN Input Delay EN Pulse Width EN Period VIH VIL IIN tID TE1 TE2 Enable Transition Time (5) Disable Transition Time (6) tET tDT Power-On Time (7) tON Awake Time TAW Period Response Time (8) TPER tRES Timing Characteristics Disabled � Enabled Enabled � Disabled EN = VDD EN = VDD, TA=25oC, VDD=3V EN = VDD EN = VDD, TA=25oC, VDD=3V o EN = VDD, TA=25 C, VDD=1.8V EN = VDD EN = VDD Magnetic Signal Frequency fB EN = VDD 0.70 - - - 0.1*VDD+0.1 1 5 - V V µA µs µs µs 31 31 27 30 1.30 - tID + TAW tID + TAW 80 52 60 40 45 1.90 TPER µs µs µs µs µs µs µs ms ms 1 / [ 2 * TPER ] Hz Table 4: Electrical specifications Note 4: Defined Output state after Power-On Time is High until the first BOP threshold is reached (B > BOP). Note 5: Enable transition time defined from EN command to the update of the Output driver state (ref. to Diagrams, p.4) Note 6: Disable transition time defined from EN command to entering Standby (ref. to Diagrams, p.4) Note 7: Power-On Time represents the time from reaching VDD = 1.6V to the update of the Output driver state Note 8: Response Time is the time from the magnetic field change to the according update of the Output driver state, guaranteed by design 390109221302 Rev 003 Page 5 of 10 Data Sheet Mar/12 ML LX92213 MicroPower & Low-Voltage Hall Effect Latch atch with Enable 8 Magnetic Specification ons DC Operating Parameters: VDD = 1.6V 6V to 3.6V Parameter Symbol Test Conditions Operating Point BOP TA = 25°C Release Point BRP Hysteresis BHYST Operating Point BOP TA = -40 to 85oC Release Point BRP Hysteresis BHYST Min 0.5 -4 1.5 0.1 -5 1.5 Typ 2 -2 4 2 -2 4 Max 4 -0.5 0.5 7 5 -0.1 0.1 7 Units mT mT mT mT mT mT Table 5: Magnetic specifications 9 Application Section 9.1 Application Schematics +1.8V / +3.3V VDD EN MCU Interface Input OUT C2 (optional) Fig.1 – Enhanced Power Manageme ent Typical 1.8V or 3.3V application with MCU inter erface reading the OUT signal and driving the EN N signal C1 10nF M MLX92213 GND anagement Fig.2 – Standard Power Ma 1.8V or 3.3V application with M MCU interface reading the OUT signal with defau ault “Micropower” 9.2 Recommendation / Comments Comm A bypass capacitor C1 of 10nF is recom mmended to ensure supply voltage stability in application ion. It should be placed between the VDD and GND pin, as close as possible to the MLX92213. The MLX92213 provides a direct push-pu pull output, hence aiming to reduce external component co count like output pull-up resistor or capacitor. The use of the outtput capacitor C2 connected in parallel to the output iss optional. If connected between OUT and GND in such a push--pull configuration, the current sinked by the charge off the t capacitor when the output switches from “0” to “1” leads to an small increase of the average current consumption of tthe whole module (IC + capacitor). n 50pF) would avoid having such small increase of the mo module average current Using small capacitor value C2 (less than consumption. For enhanced power management, the EN (Enable) signal can be driven by an external MCU. CU. It basically allows controlling the state IC and therefore its current cu consumption according the application requirementss: ⊕ Standby mode for minimal curren ent consumption (EN = “0”) ⊕ Default Micropower (EN = “1”) ⊕ Faster or slower sampling rate th hrough EN signal For more details on the different mode, please ple refer to the Principle of Operation section. For application where standard power management manag is enough (default “Micropower” mode, Standb andby unused), the EN pin should be tied to VDD 390109221302 Rev 003 Page 6 of 10 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 10 Principle of Operation Note 9: The diagrams are not-to-scale, for exact values refer to General Electrical Specification Note 10: The Output is assumed to have only a low capacitive load, which results in fast rise / fall times 390109221302 Rev 003 Page 7 of 10 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 11 Performance Graphs 11.1 Magnetic Threshold vs. Temperature 11.2 Magnetic Threshold vs. Supply Voltage 4.0 Magnetic Field Strength [mT] Magnetic Field Strength [mT] 4.0 2.0 0.0 -2.0 -4.0 2.0 0.0 -2.0 -4.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 1 1.5 2 2.5 TEMP [DegC] Bop @3V Bop @25degC Brp @3V 11.3 Average Supply Current vs. Temperature 3.5 4 Brp @25degC 11.4 Average Supply Current vs. Supply Voltage 60 60 50 50 40 IddAvg [uA] 40 IddAvg [uA] 3 VDD [V] 30 30 20 20 10 10 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 1 80 1.5 2 2.5 3 3.5 4 3.5 4 VDD [V] TEMP [DegC] 1.8 -40 3 11.5 Supply Current vs. Temperature 25 85 11.6 Supply Current vs. Supply Voltage 5 5 4 4 3 IDD IDD 3 2 2 1 1 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 1 1.5 IDDaw (mA @3V) 390109221302 Rev 003 IDDsl (uA @3V) IDDaw (mA @25degC) IDDsb (uA @3V) Page 8 of 11 2 2.5 3 VDD [V] TEMP [DegC] IDDsl (uA @25degC) IDDsb (uA @25degC) Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 12 Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices) • • IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • • EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices) • EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 13 ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 390109221302 Rev 003 Page 9 of 11 Data Sheet Mar/12 ML LX92213 MicroPower & Low-Voltage Hall Effect Latch atch with Enable 14 LD Package (UTQFN-6 6L) 1.50 BS SC 0.75 BSC Notes: 1. All dimensions are in millimeters. 2. The terminal #1 identifier and terminal num mbering convention shall conform JEDEC publication on 95 SPP-002. Details of terminal #1 identifier are a optional, but must be located within the zon ne indicated. The terminal #1 identifier may be e marked feature. INDEX AREA see note 2 3. Depopulation is possible in a symmetrical fashion. 4. Pad length applies to metallized terminal and is measured between 0.15mm and 0.30mm ffrom the terminal tip. If the terminal has the optionall radius on the other end of the terminal, the pad le ength should not be measured in that radius area a. SEATING PLANE E Terminal Tip Marking: 0.550 BSC 1st Line : .13 “.” (dot) - used to show the 1st pin 13 - Name of the device (MLX92213) R0.20 0.25+/-0.05 2 nd Line : YWW Y - Year (last digit) WW - Calendar Week see note 4 INDEX AREA see note 2 EXPOSED PAD see note 3 0.15 MIN see note 4 0.00 0.05 0.05 MIN 0.30 +/-0.05 0.2 MIN 1.10+/-0..10 390109221302 Rev 003 Page 10 of 11 Data Sheet Mar/12 MLX92213 MicroPower & Low-Voltage Hall Effect Latch with Enable 15 Disclaimer Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with Melexis for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical lifesupport or life-sustaining equipment are specifically not recommended without additional processing by Melexis for each application. The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services. © 2012 Melexis NV. All rights reserved. For the latest version of this document, go to our website at www.melexis.com Or for additional information contact Melexis Direct: Europe, Africa, Asia: Phone: +32 1367 0495 E-mail: [email protected] America: Phone: +1 248 306 5400 E-mail: [email protected] ISO/TS 16949 and ISO14001 Certified 390109221302 Rev 003 Page 11 of 11 Data Sheet Mar/12