CYSTEKEC MTB080N15J3-0-T3-G N -channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB080N15J3
BVDSS
ID @VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=10A
150V
18A
82.3mΩ(typ)
85.8mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB080N15J3
TO-252(DPAK)
G:Gate D:Drain S:Source
G
D S
Ordering Information
Device
MTB080N15J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080N15J3
CYStek Product Specification
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=6mH, ID=6.3A, RG=25Ω
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
150
±20
18.0
12.7
3.2
2.0
2.6
1.6
72
6.3
119
83
42
2.5
1.0
1.7
0.7
-55~+175
ID
*2
*2
*3
IDSM
*3
IDM
IAS
EAS
PD
*2
*2
*3
PDSM
*3
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
*2
Thermal Resistance, Junction-to-ambient, max
*3
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Rth,j-c
Rth,j-a
Value
2
50
75
Unit
°C/W
*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.
*3. When the device is on the minimum pad size recommended.
*4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
*5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS *1
IGSS
MTB080N15J3
Min.
Typ.
Max.
Unit
Test Conditions
150
1.0
-
0.15
18
-
2.5
±100
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V, VDS=0V
CYStek Product Specification
CYStech Electronics Corp.
IDSS
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
82.3
85.8
1
25
105
120
-
22
2.0
7.7
9
20.6
43.4
93.6
834
87
42
3.7
-
-
0.82
39
80
18
72
1.2
-
μA
mΩ
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 3/9
VDS =120V, VGS =0V
VDS =120V, VGS =0, Tj=125°C
VGS =10V, ID=10A
VGS =4.5V, ID=10A
nC
ID=14A, VDS=120V, VGS=10V
ns
VDS=75V, ID=14A, VGS=10V, RG=10Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=10A, VGS=0V
IF=14A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB080N15J3
CYStek Product Specification
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
5V
4V
ID, Drain Current (A)
35
30
25
20
BVDSS, Normalized Drain-Source
Breakdown Voltage
40
3.5V
3V
15
10
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=2.5V
5
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
100
VGS=10V
4.5V
3V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
2.8
ID=10A
R DS(on), Normalized Static DrainSource On-State Resistance
900
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
800
700
600
500
400
300
200
100
2.4
VGS=10V, ID=10A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 82.3mΩ typ.
0
0
0
MTB080N15J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
10
1
VDS=10V
0.1
Ta=25°C
Pulsed
VDS=120V
ID=14A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
20
100
RDSON
Limited
10
1ms
10ms
ID, Maximum Drain Current(A)
ID, Drain Current(A)
100μ s
100ms
1s
1
DC
TC=25°C, Tj=175°C
VGS=10V, θ JC=2°C/W
Single Pulse
0.1
16
12
8
4
VGS=10V, RθJC=2°C/W
0
0.01
0.1
MTB080N15J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Power Derating Curve
3500
3000
80
TJ(MAX) =175°C
TC=25°C
θ JC=2°C/W
2500
Power (W)
PD, Power Dissipation(W)
100
60
40
2000
1500
1000
20
500
0
0
25
50
75
100
125
150
175
200
0
0.001
0.01
TC, Case Temperature(℃)
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=2 ° C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB080N15J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB080N15J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB080N15J3
CYStek Product Specification
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B080
N15
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB080N15J3
CYStek Product Specification
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