DMPH4015SK3Q Green 175°C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) Max -40V 11m @ VGS = -10V 15m @ VGS = -4.5V ID TC = +25°C -45A -40A Description and Applications This MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Reverse Polarity Protection Motor Control Power Management Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D TO252 (DPAK) D G D G S S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 5) Notes: Part Number Case Packaging DMPH4015SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4015S YYWW DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 . 1 of 7 www.diodes.com = Manufacturer’s Marking H4015S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) April 2016 © Diodes Incorporated DMPH4015SK3Q Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V TC = +25°C TC = +100°C TA = +25°C TA = +100°C Steady State Steady State Value -40 ±25 -45 -35 ID A -14 -10 -100 -5.5 -22 260 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 7) Avalanche Current, L = 1mH (Note 8) Avalanche Energy, L = 1mH (Note 8) Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Steady state Steady state Value 1.7 73 3.3 38 1.0 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VGS(TH) RDS(ON) VSD -2 8 11 -0.7 -2.5 11 15 -1 V Static Drain-Source On-Resistance -1.5 VDS = VGS, ID = -250µA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — 4234 1036 526 7.8 42.7 91 14.2 13.5 13.2 10 303 138 26 20 — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: m V Test Condition pF VDS = -20V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, ID = -9.8A ns VGS = -10V, VDD = -20V, RG = 6, ID = -1A ns nC IF = -9.8A, di/dt = -100A/µs IF = -9.8A, di/dt = -100A/µs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMPH4015SK3Q 20 30.0 VGS=-3.5V 25.0 16 VGS=-4.5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=-5.0V VGS=-4.0V VGS=-5.0V VGS=-10.0V 15.0 VGS=-3.0V 10.0 12 TA=125℃ TA=85℃ 8 TA=150℃ TA=25℃ 4 TA=175℃ 5.0 VGS=-2.5V TA=-55℃ 0 0.0 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.014 0.012 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS=-4.5V 0.010 VGS=-10V 0.008 0.006 4 0.03 0.025 0.02 0.015 ID=-9.8A 0.01 0.005 0 0.004 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.018 TA=175℃ TA=150℃ 0.016 TA=125℃ 0.014 TA=85℃ 0.012 TA=25℃ 0.01 TA=-55℃ 0.008 VGS=-4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.006 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 3 of 7 www.diodes.com 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 25 1.8 VGS=-10V, ID=-9.8A 1.6 1.4 1.2 VGS=-4.5V, ID=-9.8A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2016 © Diodes Incorporated 2.2 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMPH4015SK3Q 0.018 0.016 VGS=-4.5V, ID=-9.8A 0.014 0.012 0.01 VGS=-10V, ID=-9.8A 0.008 0.006 2 1.8 ID=-1mA 1.6 ID=-250µA 1.4 1.2 1 0.004 -50 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) Ciss IS, SOURCE CURRENT (A) 25 VGS=0V, TA=125℃ 20 15 VGS=0V, TA=85℃ VGS=0V, TA=150℃ VGS=0V, TA=25℃ 10 VGS=0V, TA=175℃ 5 VGS=0V, TA=-55℃ f=1MHz Coss 1000 Crss 100 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 1000 RDS(ON) LIMITED PW =100µs ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS=-20V, ID=-9.8A PW =1µs 100 PW =1ms 10 PW =10ms PW =100ms TJ(MAX)=175℃ TC=25℃ PW =1s Single Pulse DUT on infinite heatsink VGS=-4.5V 1 2 0 PW =10µs 0.1 0 20 40 60 80 Qg (nC) Figure 11. Gate Charge DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 100 120 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 April 2016 © Diodes Incorporated DMPH4015SK3Q r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=2.5°C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 t1, PULSE DURATION TIME (sec) 0.1 1 10 Figure 13. Transient Thermal Resistance DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 5 of 7 www.diodes.com April 2016 © Diodes Incorporated DMPH4015SK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm 2.74REF Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 6 of 7 www.diodes.com April 2016 © Diodes Incorporated DMPH4015SK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMPH4015SK3Q Document number: DS38125 Rev. 2 - 2 7 of 7 www.diodes.com April 2016 © Diodes Incorporated