MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Outline ■ Features C TO-220AB A • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capacitances. • 100% single pulse avalanche energy test. D symbol Q A B B1 C C1 D E F G H L N Q ØP ■ Mechanical data G H Min Max 10.10 15.0 8.90 4.30 10.50 16.0 9.50 4.80 3.00 2.30 1.20 0.70 0.35 1.17 3.30 12.70 2.34 2.40 3.70 1.40 0.90 0.55 1.37 3.80 14.70 2.74 3.00 3.90 L • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220F molded plastic body. • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. • Polarity: As mark ed. • Mounting Position : Any. • Weight : Approximated 2.25 gram . B1 B Marking code Dimensions in inches(millimeters) Drain E N N F C1 Gate Dimensions in inches and (millimeters) Source ■ Absolute (T C = 25 O C unless otherwise specified) PARAMETER CONDITIONS VDSS Drain-Source Voltage Continuous Drain Current Continuous Drain Current Symbol T C = 100 O C ID MH07N60CT 600 UNIT V 7 4.5 A Pulsed Drain Current(1) IDM 28 Gate-Source Voltage VGS ±30 V Single Pulse Avalanche Energy(2) EAS 550 mJ Avalanche Current(1) IAR 3.3 A Repetitive Avalanche Energy(1) EAR 54 mJ Power Dissipation Derating factor above 25 O C dV/dt Peak Diode Recovery dv/dt(3) Gate source ESD PD HBM-C = 100pf, R = 1.5kΩ Operating and Storage Temperature Range W 0.8 W/ O C 5.0 V/ns VESD(G-S) 3000 TJ, TSTG -55 ~ +150 O C 300 O C TL Maximum temperature for soldering 100 V NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2.L=10.0mH, I D = 10.5A, Start T J = 25 O C. 3.I S D =7A,di/dt ≤100A/us, V D D≤BV D S , Start T J = 25 O C. 1 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Electrical characteristics (T C = 25 O C unless otherwise specified) CONDITIONS PARAMETER Drain-Source Breakdown Voltage Bvdss Temperature Coefficient Drain-Source Leakage Current V G S = 0V, I D = 250µA O I D = 250uA, Reference 25 C V D S = 600V, V G S = 0V, T a = 25°C V D S = 480V, V G S = 0V, T a = 125°C Symbol MIN. VDSS 600 TYP. MAX. UNIT V BV D S S / T J V/ O C 0.74 1 IDSS uA 100 Gate-Source Leakage Current, Forward V G S = 20V IGSS(F) 10 Gate-Source Leakage Current, Reverse V G S = -20V IGSS(R) -10 uA ■ ON Characteristics CONDITIONS PARAMETER Symbol MIN. 2.0 Gate Threshold Voltage V D S = V G S , I D = 250µA VGS(th) Static Drain-Source On-Resistance V G S = 10V, I D = 3.5A RDS(on) TYP. MAX. UNIT 4.0 V 0.88 1.25 Ω TYP. MAX. UNIT ■ Dynamic Characteristics CONDITIONS PARAMETER Forward Transconductance V D S = 15V, I D = 3.5A Input Capacitance Output Capacitance V D S = 25V, V G S = 0V, f = 1.0MHz Reverse Transfer Capacitance Symbol MIN. gfs 6.0 Ciss 1071 Coss 112 Crss 12 S pF ■ Resistive Switching Characteristics CONDITIONS PARAMETER Turn-on Delay Time Symbol MIN. TYP. td ( O N ) 11 tr 11 td ( O F F ) 35 Fail Time tf 13 Total Gate Charge Qg 28 Qgs 6 Qgd 12 Rise Time Turn-off Delay Time Gate-Source Charge I D = 7A, V D D = 300V, V G S = 10V, R G = 4.7Ω I D = 7A, V D D = 300V, V G S = 10V Gate-Drain Charge MAX. UNIT ns nC ■ Source-Drain Diode Characteristics CONDITIONS PARAMETER Symbol MIN. TYP. MAX. Continuous Source-Drain Diode Current Boby Diode IS 7 Pulse Diode Forward Current Boby Diode ISM 28 Body Diode Voltage I S = 7.0A, V G S = 0V Reverse recovery time Reverse recovery charge O I S = 7A, T J = 25 C, dI F /dt = 100A/μs, V G S = 0V VSD UNIT A V 1.5 trr 255 ns Qrr 1506 uC ■ Thermal characteristics PARAMETER Thermal Resistance CONDITIONS Symbol MIN. TYP. Junction to Case RθJC 1.25 Junction to Ambient RθJA 62 MAX. UNIT O C/W ■ Gate-source Zener Diode PARAMETER Gate-Source Breakdown Voltage CONDITIONS I G S = ±1mA(open Drain) 2 Symbol MIN. VGSO 30 TYP. MAX. UNIT V Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 3 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 4 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 5 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Test circuit and waveform 6 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Test circuit and waveform 7 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1 MH07N60CT 600V Silicon N-Channel Power MOSFET ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. ■ Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. ■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CITC assume any liability for application assistance or customer product design. ■ CITC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. ■ No license is granted by implication or otherwise under any intellectual property rights of CITC. ■ CITC products are not authorized for use as critical components in life support devices or systems without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.) 8 Document ID : DS-21M67 Revised Date : 2015/09/16 Revision : C1