ISSI IS29GL256L-70GLE 16-word/32-byte page read buffer Datasheet

IS29GL256
256M-BIT
3.0V PAGE MODE PARALLEL FLASH MEMORY
ADVANCED DATA SHEET
IS29GL256H/L
IS29GL256
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
ADVANCED INFORMATION
FEATURES
 Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
 High performance
- Access times as fast as 70ns
 VIO Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on VIO input. VIO range is 1.65 to VCC
 Persistent methods of Advanced Sector
Protection
 WP#/ACC input
- Accelerates programming time (when VHH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of sector
protection settings
 16-word/32-byte page read buffer
 Hardware reset input (RESET#) resets device
 256-word/512-byte write buffer reduces overall
programming time for multiple-word updates
 Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
 Secured Silicon Sector (SSR) region
- 512-word/1024-byte sector for permanent,
secure identification
- 256-word Factory Locked SSR and 256-word
Customer Locked SSR
 Minimum 100K program/erase endurance
cycles.
 Uniform 64Kword/128KByte Sector
Architecture 256 sectors
 Suspend and Resume commands for Program
and Erase operations
 Write operation status bits indicate program
and erase operation completion

-
Package Options
56-pin TSOP
64-ball 11mm x 13mm BGA
64-ball 9mm x 9mm BGA
56-ball 7mm x 9mm BGA

-
Temperature Range
Extended Grade: -40°C to +105°C
V Grade (Hybrid): -40°C to +125°C
Automotive Grade: up to +125°C
 Support for CFI (Common Flash Interface)
GENERAL DESCRIPTION
The IS29GL256 offers a fast page access time of 25ns with a corresponding random access time as
fast as 70ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be
programmed in one operation, resulting in faster effective programming time than standard
programming algorithms. This makes the device ideal for today’s embedded applications that require
higher density, better performance and lower power consumption.
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IS29GL256H/L
CONNECTION DIAGRAMS
Figure 1. 56-pin Standard TSOP (Top View)
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
RFU
RFU
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
RFU
RFU
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
RFU
VIO
Note: RFU= Reserved for future use
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Figure 2. 64-ball Ball Grid Array (Top View, Balls Facing Down)
A8
B8
C8
D8
E8
F8
G8
H8
RFU
A22
A23
VIO
VSS
RFU
RFU
RFU
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
DQ15 / A-1
VSS
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY / BY# WP# / ACC
BYTE#
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
RFU
RFU
RFU
RFU
RFU
VIO
RFU
RFU
Note: RFU= Reserved for future use
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Figure 2-1. 56-ball Ball Grid Array (Top View, Balls Facing Down)
WP#/ACC
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TABLE 1. PIN DESCRIPTION
Pin Name
Function
A23–A0
A23–A0
DQ0-DQ14
Data input/output.
DQ15 / A-1
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
CE#
Chip Enable
OE#
Output Enable
RESET#
Hardware Reset Pin
RY/BY#
Ready/Busy Output
WE#
Write Enable
Vcc
Supply Voltage (2.7-3.6V)
Vss
Ground
VIO
Supply Voltage for Input/Output.
BYTE#
Byte/Word mode selection
WP#/ACC
RFU
FIGURE 3. LOGIC DIAGRAM
DQ0 – DQ15
(A-1)
A0 – A23
CE#
OE#
WE#
Reset#
WP#/ACC
Byte#
VIO
RY/BY#
Write Protect / Acceleration Pin
(WP# has an internal pull-up; when
unconnected, WP# is at VIH.)
Reserved for future use.
Not Connected to anything
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Table 2. PRODUCT SELECTOR GUIDE
Product Number
IS29GL256
Full Voltage Range: Vcc=2.7 – 3.6 V
VIO=1.65 – 3.6 V
Speed Option
70ns
Max Access Time, ns (tacc)
70
Max Page Read Access, ns(tpacc)
25
Max CE# Access, ns (tce)
70
Max OE# Access, ns (toe)
25
BLOCK DIAGRAM
RY/BY#
Vcc
Vss
VIO
DQ0-DQ15 (A-1)
Block Protect Switches
Erase Voltage Generator
Input/Output Buffers
State
Control
WE#
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
Vcc Detector
Timer
Address Latch
STB
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A23
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Product Overview
IS29GL256 is 256 Mb, 3.0-volt-only, page mode Flash devices optimized for today’s embedded designs
that demand a large storage array and rich functionality. This product offers uniform 64 Kword (128 KB)
sectors and feature VI/O control, allowing control and I/O signals to operate from 1.65 V to VCC. Additional
features include:
 Single word programming or a 256-word buffer for an increased programming speed
 Program Suspend/Resume and Erase Suspend/Resume
 Advanced Sector Protection methods for protecting sectors as required
 512 words/1024 bytes of Secured Silicon area for storing customer secured information. The
Secured Silicon Sector is One Time Programmable (OTP).
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Table 3. Sector / Persistent Protection Sector Group Address Tables
SA0
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
000000–00FFFF
SA1
128/64
010000–01FFFF
SA2
128/64
020000–02FFFF
PPB 3
SA3
128/64
030000–03FFFF
PPB 4
SA4
128/64
040000–04FFFF
SA5
128/64
050000–05FFFF
SA6
128/64
060000–06FFFF
PPB 7
SA7
128/64
070000–07FFFF
PPB 8
SA8
128/64
080000–08FFFF
PPB 9
SA9
128/64
090000–09FFFF
SA10
128/64
0A0000–0AFFFF
PPB 11
SA11
128/64
0B0000–0BFFFF
PPB 12
SA12
128/64
0C0000–0CFFFF
SA13
128/64
0D0000–0DFFFF
SA14
128/64
0E0000–0EFFFF
PPB 15
SA15
128/64
0F0000–0FFFFF
PPB 16
SA16
128/64
100000–10FFFF
SA17
128/64
110000–11FFFF
PPB Group
A23-A18
PPB 0
PPB 1
PPB 2
PPB 5
PPB 6
PPB 10
PPB 13
PPB 14
PPB 17
PPB 18
000000
000001
000010
000011
000100
Sector
SA18
128/64
120000–12FFFF
PPB 19
SA19
128/64
130000–13FFFF
PPB 20
SA20
128/64
140000–14FFFF
SA21
128/64
150000–15FFFF
SA22
128/64
160000–16FFFF
PPB 23
SA23
128/64
170000–17FFFF
PPB 24
SA24
128/64
180000–18FFFF
SA25
128/64
190000–19FFFF
SA26
128/64
1A0000–1AFFFF
PPB 27
SA27
128/64
1B0000–1BFFFF
PPB 28
SA28
128/64
1C0000–1CFFFF
PPB 29
SA29
128/64
1D0000–1DFFFF
SA30
128/64
1E0000–1EFFFF
PPB 31
SA31
128/64
1F0000–1FFFFF
PPB 32
SA32
128/64
200000–20FFFF
SA33
128/64
210000–21FFFF
SA34
128/64
220000–22FFFF
SA35
128/64
230000–23FFFF
PPB 21
PPB 22
PPB 25
PPB 26
PPB 30
PPB 33
PPB 34
PPB 35
000101
000110
000111
001000
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SA36
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
240000–24FFFF
SA37
128/64
250000–25FFFF
SA38
128/64
260000–26FFFF
PPB 39
SA39
128/64
270000–27FFFF
PPB 40
SA40
128/64
280000–28FFFF
PPB 41
SA41
128/64
290000–29FFFF
SA42
128/64
2A0000–2AFFFF
PPB 43
SA43
128/64
2B0000–2BFFFF
PPB 44
SA44
128/64
2C0000–2CFFFF
SA45
128/64
2D0000–2DFFFF
SA46
128/64
2E0000–2EFFFF
PPB 47
SA47
128/64
2F0000–2FFFFF
PPB 48
SA48
128/64
300000–30FFFF
SA49
128/64
310000–31FFFF
PPB Group
A23-A18
PPB 36
PPB 37
PPB 38
PPB 42
PPB 45
PPB 46
PPB 49
PPB 50
001001
001010
001011
001100
Sector
SA50
128/64
320000–32FFFF
PPB 51
SA51
128/64
330000–33FFFF
PPB 52
SA52
128/64
340000–34FFFF
SA53
128/64
350000–35FFFF
SA54
128/64
360000–36FFFF
PPB 55
SA55
128/64
370000–37FFFF
PPB 56
SA56
128/64
380000–38FFFF
SA57
128/64
390000–39FFFF
SA58
128/64
3A0000–3AFFFF
PPB 59
SA59
128/64
3B0000–3BFFFF
PPB 60
SA60
128/64
3C0000–3CFFFF
PPB 61
SA61
128/64
3D0000–3DFFFF
SA62
128/64
3E0000–3EFFFF
PPB 63
SA63
128/64
3F0000–3FFFFF
PPB 64
SA64
128/64
400000–40FFFF
SA65
128/64
410000–41FFFF
SA66
128/64
420000–42FFFF
PPB 67
SA67
128/64
430000–43FFFF
PPB 68
SA68
128/64
440000–44FFFF
SA69
128/64
450000–45FFFF
SA70
128/64
460000–46FFFF
SA71
128/64
470000–47FFFF
PPB 53
PPB 54
PPB 57
PPB 58
PPB 62
PPB 65
PPB 66
PPB 69
PPB 70
PPB 71
001101
001110
001111
010000
010001
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SA72
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
480000–48FFFF
SA73
128/64
490000–49FFFF
SA74
128/64
4A0000–4AFFFF
PPB 75
SA75
128/64
4B0000–4BFFFF
PPB 76
SA76
128/64
4C0000–4CFFFF
PPB 77
SA77
128/64
4D0000–4DFFFF
SA78
128/64
4E0000–4EFFFF
PPB 79
SA79
128/64
4F0000–4FFFFF
PPB 80
SA80
128/64
500000–50FFFF
SA81
128/64
510000–51FFFF
SA82
128/64
520000–52FFFF
PPB 83
SA83
128/64
530000–53FFFF
PPB 84
SA84
128/64
540000–54FFFF
SA85
128/64
550000–55FFFF
PPB Group
A23-A18
PPB 72
PPB 73
PPB 74
PPB 78
PPB 81
PPB 82
PPB 85
PPB 86
010010
010011
010100
010101
Sector
SA86
128/64
560000–56FFFF
PPB 87
SA87
128/64
570000–57FFFF
PPB 88
SA88
128/64
580000–58FFFF
SA89
128/64
590000–59FFFF
SA90
128/64
5A0000–5AFFFF
PPB 91
SA91
128/64
5B0000–5BFFFF
PPB 92
SA92
128/64
5C0000–5CFFFF
SA93
128/64
5D0000–5DFFFF
SA94
128/64
5E0000–5EFFFF
PPB 95
SA95
128/64
5F0000–5FFFFF
PPB 96
SA96
128/64
600000–60FFFF
PPB 97
SA97
128/64
610000–61FFFF
SA98
128/64
620000–62FFFF
PPB 99
SA99
128/64
630000–63FFFF
PPB 100
SA100
128/64
640000–64FFFF
SA101
128/64
650000–65FFFF
SA102
128/64
660000–66FFFF
PPB 103
SA103
128/64
670000–67FFFF
PPB 104
SA104
128/64
680000–68FFFF
SA105
128/64
690000–69FFFF
SA106
128/64
6A0000–6AFFFF
SA107
128/64
6B0000–6BFFFF
PPB 89
PPB 90
PPB 93
PPB 94
PPB 98
PPB 101
PPB 102
PPB 105
PPB 106
PPB 107
010110
010111
011000
011001
011010
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SA108
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
6C0000–6CFFFF
SA109
128/64
6D0000–6DFFFF
SA110
128/64
6E0000–6EFFFF
PPB 111
SA111
128/64
6F0000–6FFFFF
PPB 112
SA112
128/64
700000–70FFFF
PPB 113
SA113
128/64
710000–71FFFF
SA114
128/64
720000–72FFFF
PPB 115
SA115
128/64
730000–73FFFF
PPB 116
SA116
128/64
740000–74FFFF
SA117
128/64
750000–75FFFF
SA118
128/64
760000–76FFFF
PPB 119
SA119
128/64
770000–77FFFF
PPB 120
SA120
128/64
780000–78FFFF
SA121
128/64
790000–79FFFF
PPB Group
A23-A18
PPB 108
PPB 109
PPB 110
PPB 114
PPB 117
PPB 118
PPB 121
PPB 122
011011
011100
011101
011110
Sector
SA122
128/64
7A0000–7AFFFF
PPB 123
SA123
128/64
7B0000–7BFFFF
PPB 124
SA124
128/64
7C0000–7CFFFF
SA125
128/64
7D0000–7DFFFF
SA126
128/64
7E0000–7EFFFF
PPB 127
SA127
128/64
7F0000–7FFFFF
PPB 128
SA128
128/64
800000–80FFFF
SA129
128/64
810000–81FFFF
SA130
128/64
820000–82FFFF
PPB 131
SA131
128/64
830000–83FFFF
PPB 132
SA132
128/64
840000–84FFFF
PPB 133
SA133
128/64
850000–85FFFF
SA134
128/64
860000–86FFFF
PPB 135
SA135
128/64
870000–87FFFF
PPB 136
SA136
128/64
880000–88FFFF
SA137
128/64
890000–89FFFF
SA138
128/64
8A0000–8AFFFF
PPB 139
SA139
128/64
8B0000–8BFFFF
PPB 140
SA140
128/64
8C0000–8CFFFF
SA141
128/64
8D0000–8DFFFF
SA142
128/64
8E0000–8EFFFF
SA143
128/64
8F0000–8FFFFF
PPB 125
PPB 126
PPB 129
PPB 130
PPB 134
PPB 137
PPB 138
PPB 141
PPB 142
PPB 143
011111
100000
100001
100010
100011
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SA144
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
900000–90FFFF
SA145
128/64
910000–91FFFF
SA146
128/64
920000–92FFFF
PPB 147
SA147
128/64
930000–93FFFF
PPB 148
SA148
128/64
940000–94FFFF
PPB 149
SA149
128/64
950000–95FFFF
SA150
128/64
960000–96FFFF
PPB 151
SA151
128/64
970000–97FFFF
PPB 152
SA152
128/64
980000–98FFFF
SA153
128/64
990000–99FFFF
SA154
128/64
9A0000–9AFFFF
PPB 155
SA155
128/64
9B0000–9BFFFF
PPB 156
SA156
128/64
9C0000–9CFFFF
SA157
128/64
9D0000–9DFFFF
PPB Group
A23-A18
PPB 144
PPB 145
PPB 146
PPB 150
PPB 153
PPB 154
PPB 157
PPB 158
100100
100101
100110
100111
Sector
SA158
128/64
9E0000–9EFFFF
PPB 159
SA159
128/64
9F0000–9FFFFF
PPB 160
SA160
128/64
A00000–A0FFFF
SA161
128/64
A10000–A1FFFF
SA162
128/64
A20000–A2FFFF
PPB 163
SA163
128/64
A30000–A3FFFF
PPB 164
SA164
128/64
A40000–A4FFFF
SA165
128/64
A50000–A5FFFF
SA166
128/64
A60000–A6FFFF
PPB 167
SA167
128/64
A70000–A7FFFF
PPB 168
SA168
128/64
A80000–A8FFFF
PPB 169
SA169
128/64
A90000–A9FFFF
SA170
128/64
AA0000–AAFFFF
PPB 171
SA171
128/64
AB0000–ABFFFF
PPB 172
SA172
128/64
AC0000–ACFFFF
SA173
128/64
AD0000–ADFFFF
SA174
128/64
AE0000–AEFFFF
PPB 175
SA175
128/64
AF0000–AFFFFF
PPB 176
SA176
128/64
B00000–B0FFFF
SA177
128/64
B10000–B1FFFF
SA178
128/64
B20000–B2FFFF
SA179
128/64
B30000–B3FFFF
PPB 161
PPB 162
PPB 165
PPB 166
PPB 170
PPB 173
PPB 174
PPB 177
PPB 178
PPB 179
101000
101001
101010
101011
101100
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SA180
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
B40000–B4FFFF
SA181
128/64
B50000–B5FFFF
SA182
128/64
B60000–B6FFFF
PPB 183
SA183
128/64
B70000–B7FFFF
PPB 184
SA184
128/64
B80000–B8FFFF
PPB 185
SA185
128/64
B90000–B9FFFF
SA186
128/64
BA0000–BAFFFF
PPB 187
SA187
128/64
BB0000–BBFFFF
PPB 188
SA188
128/64
BC0000–BCFFFF
SA189
128/64
BD0000–BDFFFF
SA190
128/64
BE0000–BEFFFF
PPB 191
SA191
128/64
BF0000–BFFFFF
PPB 192
SA192
128/64
C00000–C0FFFF
SA193
128/64
C10000–C1FFFF
PPB Group
A23-A18
PPB 180
PPB 181
PPB 182
PPB 186
PPB 189
PPB 190
101101
101110
101111
PPB 193
PPB 194
110000
Sector
SA194
128/64
C20000–C2FFFF
PPB 195
SA195
128/64
C30000–C3FFFF
PPB 196
SA196
128/64
C40000–C4FFFF
SA197
128/64
C50000–C5FFFF
SA198
128/64
C60000–C6FFFF
PPB 199
SA199
128/64
C70000–C7FFFF
PPB 200
SA200
128/64
C80000–C8FFFF
SA201
128/64
C90000–C9FFFF
SA202
128/64
CA0000–CAFFFF
PPB 203
SA203
128/64
CB0000–CBFFFF
PPB 204
SA204
128/64
CC0000–CCFFFF
PPB 205
SA205
128/64
CD0000–CDFFFF
SA206
128/64
CE0000–CEFFFF
PPB 207
SA207
128/64
CF0000–CFFFFF
PPB 208
SA208
128/64
D00000–D0FFFF
SA209
128/64
D10000–D1FFFF
SA210
128/64
D20000–D2FFFF
PPB 211
SA211
128/64
D30000–D3FFFF
PPB 212
SA212
128/64
D40000–D4FFFF
SA213
128/64
D50000–D5FFFF
SA214
128/64
D60000–D6FFFF
SA215
128/64
D70000–D7FFFF
PPB 197
PPB 198
PPB 201
PPB 202
PPB 206
PPB 209
PPB 210
PPB 213
PPB 214
PPB 215
110001
110010
110011
110100
110101
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SA216
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
D80000–D8FFFF
SA217
128/64
D90000–D9FFFF
SA218
128/64
DA0000–DAFFFF
PPB 219
SA219
128/64
DB0000–DBFFFF
PPB 220
SA220
128/64
DC0000–DCFFFF
PPB 221
SA221
128/64
DD0000–DDFFFF
SA222
128/64
DE0000–DEFFFF
PPB 223
SA223
128/64
DF0000–DFFFFF
PPB 224
SA224
128/64
E00000–E0FFFF
SA225
128/64
E10000–E1FFFF
SA226
128/64
E20000–E2FFFF
PPB 227
SA227
128/64
E30000–E3FFFF
PPB 228
SA228
128/64
E40000–E4FFFF
SA229
128/64
E50000–E5FFFF
PPB Group
A23-A18
PPB 216
PPB 217
PPB 218
PPB 222
PPB 225
PPB 226
PPB 229
PPB 230
110110
110111
111000
111001
Sector
SA230
128/64
E60000–E6FFFF
PPB 231
SA231
128/64
E70000–E7FFFF
PPB 232
SA232
128/64
E80000–E8FFFF
SA233
128/64
E90000–E9FFFF
SA234
128/64
EA0000–EAFFFF
PPB 235
SA235
128/64
EB0000–EBFFFF
PPB 236
SA236
128/64
EC0000–ECFFFF
SA237
128/64
ED0000–EDFFFF
SA238
128/64
EE0000–EEFFFF
PPB 239
SA239
128/64
EF0000–EFFFFF
PPB 240
SA240
128/64
F00000–F0FFFF
PPB 241
SA241
128/64
F10000–F1FFFF
SA242
128/64
F20000–F2FFFF
PPB 243
SA243
128/64
F30000–F3FFFF
PPB 244
SA244
128/64
F40000–F4FFFF
SA245
128/64
F50000–F5FFFF
SA246
128/64
F60000–F6FFFF
SA247
128/64
F70000–F7FFFF
PPB 233
PPB 234
PPB 237
PPB 238
PPB 242
PPB 245
PPB 246
PPB 247
111010
111011
111100
111101
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SA248
Sector Size
(Kbytes / Kwords)
128/64
Address Range (h)
Word mode (x16)
F80000–F8FFFF
SA249
128/64
F90000–F9FFFF
SA250
128/64
FA0000–FAFFFF
PPB 251
SA251
128/64
FB0000–FBFFFF
PPB 252
SA252
128/64
FC0000–FCFFFF
PPB 253
SA253
128/64
FD0000–FDFFFF
SA254
128/64
FE0000–FEFFFF
SA255
128/64
FF0000–FFFFFF
PPB Group
A23-A18
Sector
PPB 248
PPB 249
111110
PPB 250
111111
PPB 254
PPB 255
Table 4. Device OPERATING MODES
256M FLASH USER MODE TABLE
DQ8-DQ15
CE#
OE#
WE#
RESET#
WP#/
ACC
A0A23
DQ0DQ7
Read
L
L
H
H
L/H
AIN
DOUT
DOUT
Write
L
H
L
H
(Note 1)
AIN
DIN
DIN
Accelerated
Program
L
H
L
H
VHH
AIN
DIN
DIN
CMOS Standby
Vcc
0.3V
X
X
Vcc
0.3V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
High-Z
Hardware Reset
X
X
X
L
L/H
X
High-Z
High-Z
High-Z
Operation
BYTE#
= VIH
BYTE#
= VIL
DQ8-DQ14
=High-Z,
DQ15=A-1
Notes:
1. Addresses are A23:A0 in word mode; A23:A-1 in byte mode.
2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an
internal pull-up; when unconnected, WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured Silicon
Sector can be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm.
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Regarding to some additional operating modes such as sector lock status verification, read manufacturer
code, and so on, please refer to the Appendix-1.
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USER MODE DEFINITIONS
Word / Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by
CE#, OE#, and WE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7
are active and controlled by CE#, OE#, and WE#. The data I/O pins DQ8-DQ14 are tri-stated, and the
DQ15 pin is used as an input for the LSB (A-1) address function.
VIO Control
The VIO allows the host system to set the voltage levels that the device generates and tolerates on all
inputs and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. For example, a VIO of
1.65-3.6 volts allows for I/O at the 1.65 or 3.6 volt levels, driving and receiving signals to and from other
1.65 or 3.6 V devices on the same data bus.
Read
All memories require access time to output array data. In a read operation, data is read from one
memory location at a time. Addresses are presented to the device in random order, and the propagation
delay through the device causes the data on its outputs to arrive with the address on its inputs.
The device defaults to reading array data after device power-up or hardware reset. To read data from the
memory array, the system must first assert a valid address on A23-A0, while driving OE# and CE# to
VIL. WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on
DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid
output data. The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access
time (tOE) has elapsed from the falling edge of OE#, assuming the tACC access time has been meet.
Page Read Mode
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page
size of the device is 16 words/32 bytes. The appropriate page is selected by the higher address bits A23A4. Address bits A3-A0 in word mode (A3 to A-1 in byte mode) determine the specific word within a
page. The microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long
as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When
CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page
mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intraread page” addresses.
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Autoselect
The Autoselect mode provides manufacturer ID, Device identification, and sector protection information,
through identifier codes output from the internal register (separate from the memory array) on DQ7-DQ0.
 The Autoselect command sequence may be written to an address within a sector that is either in the
read or erase-suspend-read mode.
 The Autoselect command may not be written while the device is actively programming or erasing.
 The system must write the reset command to return to the read mode (or erase-suspend-read mode if
the sector was previously in Erase Suspend).
 When verifying sector protection, the sector address must appear on the appropriate highest order
address bits. The remaining address bits are don't care and then read the corresponding identifier
code on DQ15-DQ0.
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are
described in detail in the following sections.
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data
is latched on the 1st rising edge of WE# or CE#.
Note the following:
 When the Embedded Program algorithm is complete, the device returns to the read mode.
 The system can determine the status of the program operation by reading the DQ status bits. Refer to
“Write Operation Status” for information on these status bits.
 An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
 Only erase operations can convert a “0” to a “1.”
 Any commands written to the device during the Embedded Program/Erase are ignored except the
Suspend commands.
 Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
 A hardware reset and/or power removal immediately terminates the Program/Erase operation and the
Program/Erase command sequence should be reinitiated once the device has returned to the read
mode to ensure data integrity.
 Programming is allowed in any sequence and across sector boundaries for single word programming
operation.
 Programming to the same word address multiple times without intervening erases is permitted.
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Single Word Programming
Single word programming mode is one method of programming the Flash. In this mode, four Flash
command write cycles are used to program an individual Flash address. The data for this programming
operation could be 8 or 16-bits wide.
While the single word programming method is supported by most devices, in general Single Word
Programming is not recommended for devices that support Write Buffer Programming.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by
reading the DQ status bits.
 During programming, any command (except the Suspend Program command) is ignored.
 The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation
is in progress.
 A hardware reset immediately terminates the program operation. The program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
 Programming to the same address multiple times continuously (for example, “walking” a bit within a
word) is permitted.
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Figure 4. Single Word Program
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Write Buffer Programming
Write Buffer Programming allows the system to write a maximum of 256 words in one programming
operation. This results in a faster effective word programming time than the standard “word”
programming algorithms. The Write Buffer Programming command sequence is initiated by first writing
two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command
written at the Sector Address in which programming occurs. At this point, the system writes the number
of “word locations minus 1” that are loaded into the page buffer at the Sector Address in which
programming occurs. This tells the device how many write buffer addresses are loaded with data and
therefore when to expect the “Program Buffer to Flash” confirm command. The number of locations to
program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number
of locations to program minus 1. For example, if the system programs 6 address locations, then 05h
should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first
address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent
address/data pairs must fall within the elected-write-buffer-page.
The “write-buffer-page” is selected by using the addresses A23–A8.
The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write
buffer. (This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages.”
This also means that Write Buffer Programming cannot be performed across multiple sectors. If the
system attempts to load programming data outside of the selected “write-buffer-page”, the operation
ABORTs.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into
the write buffer.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is
decremented for every data load operation. Also, the last data loaded at a location before the “Program
Buffer to Flash” confirm command is the data programmed into the device. It is the software's
responsibility to comprehend ramifications of loading a write-buffer location more than once. The counter
decrements for each data load operation, NOT for each unique write-buffer-address location. Once the
specified number of write buffer locations have been loaded, the system must then write the “Program
Buffer to Flash” command at the Sector Address. Any other address/data write combinations abort the
Write Buffer Programming operation. The Write Operation Status bits should be used while monitoring
the last address location loaded into the write buffer. This eliminates the need to store an address in
memory because the system can load the last address location, issue the program confirm command at
the last loaded address location, and then check the write operation status at that same address. DQ7,
DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer
Programming.
The write-buffer “embedded” programming operation can be suspended or resumed using the standard
suspend/resume commands. Upon successful completion of the Write Buffer Programming operation,
the device returns to READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
 Load a value that is greater than the page buffer size during the “Number of Locations to Program”
step.
 Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
 Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting
Address” during the “write buffer data loading” stage of the operation.
 Writing anything other than the Program to Buffer Flash Command after the specified number of “data
load” cycles.
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The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”),
DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED.
Note that the Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program
operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash
devices are capable of handling multiple write buffer programming operations on the same write buffer
address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Figure 5. Write Buffer Programming Operation
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Sector Erase
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by
the address of the sector to be erased, and the sector erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
Once the sector erase operation has begun, only the Sector Erase Suspend command is valid. All other
commands are ignored. If there are several sectors to be erased, Sector Erase Command sequences
must be issued for each sector. That is, only a sector address can be specified for each Sector Erase
command. Users must issue another Sector Erase command for the next sector to be erased after the
previous one is completed.
When the Embedded Erase algorithm is completed, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by using
DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart on
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables
in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram
for timing waveforms.
Figure 6. Sector Erase Operation
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Data =FFh?
No
Yes
Erase Done
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Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by Table 13. These commands invoke the
Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and verifies the entire memory to an all zero data
pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain FFFFh.
The system is not required to provide any controls or timings during these operations.
When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7 or
DQ6/DQ2. Refer to “Write Operation Status” for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that sector has returned to reading array data, to ensure the entire array is properly
erased.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. The sector address is required when
writing this command. This command is valid only during the sector erase operation. The Sector Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm.
Addresses are don’t-cares when writing the Sector Erase Suspend command.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The
system can read data from or program data to any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors
produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to
determine if a sector is actively erasing or is erase-suspended.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using write operation status bits,
just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence, the
Secured Silicon Sector command, and CFI query command. Refer to Write Buffer Programming and the
Autoselect for details.
To resume the sector erase operation, the system must write the Erase Resume command. The address
of the erase-suspended sector is required when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed
erasing.
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Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or
a “Write to Buffer” programming operation so that data can read from any non-suspended sector. When
the Program Suspend command is written during a programming process, the device halts the
programming operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are
“don't-cares” when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming
operation while an erase is suspended. In this case, data may be read from any addresses not within a
sector in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area,
then user must use the proper command sequences to enter and exit this region.
The system may also write the Autoselect Command Sequence and CFI query command when the
device is in Program Suspend mode. The device allows reading Autoselect codes in the suspended
sectors, since the codes are not stored in the memory array. When the device exits the Autoselect mode,
the device reverts to Program Suspend mode, and is ready for another valid operation.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the write operation status bits, just as in the
standard program operation.
The system must write the Program Resume command (address bits are “don't care”) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the device has
resumed programming.
Accelerated Program
Accelerated single word programming and write buffer programming operations are enabled through the
WP#/ACC pin. This method is faster than the standard program command sequences.
If the system asserts VHH on this input, the device automatically enters the Accelerated Program mode
and uses the higher voltage on the input to reduce the time required for program operations. The system
can then use the Write Buffer Load command sequence provided by the Accelerated Program mode.
Note that if a “Write-to-Buffer-Abort Reset” is required while in Accelerated Program mode, the full 3cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input,
upon completion of the embedded program operation, returns the device to normal operation.
 Sectors must be unlocked prior to raising WP#/ACC to VHH.
 The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device
damage may result.
 It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is
recommended that WP#/ACC apply from VHH to VIH/VIL before powering down VCC/ VIO.
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Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The following
subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid
after the rising edge of the final WE# pulse in the command sequence. Note that the Data# Polling is
valid only for the last word being programmed in the write-buffer-page during Write Buffer Programming.
Reading Data# Polling status on any word other than the last word to be programmed in the write-bufferpage returns false status information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The
system must provide the program address to read valid status information on DQ7. If a program address
falls within a protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode.
During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded
Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a
“1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read
valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a
protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change
asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may
change from providing status information to valid data on DQ7. Depending on when the system samples
the DQ7 output, it may read the status or valid data. Even if the device has completed the program or
erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on
DQ7-D00 appears on successive read cycles.
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Figure 7. Write Operation Status Flowchart
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any
address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address that
is being programmed or erased causes DQ6 to toggle. When the operation is complete, DQ6 stops
toggling.
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After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 100μs, then returns to reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase
2suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively,
the system can use DQ7.
If a program address falls within a protected sector, DQ6 toggles for approximately 1μs after the program
command sequence is written, then returns to reading array data. DQ6 also toggles during the erasesuspend-program mode, and stops toggling once the Embedded Program Algorithm is complete.
Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in
state.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles
when the system reads at addresses within those sectors that have been selected for erasure. But DQ2
cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison,
indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits are required for sector and mode information.
Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a
row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of
the toggle bit after the first read. After the second read, the system would compare the new value of the
toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erases
operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after
the initial two read cycles, the system determines that the toggle bit is still toggling, the system also
should note whether the value of DQ5 is high. If it is, the system should then determine again whether
the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the
toggle bit is no longer toggling, the device has successfully completed the program or erases operation.
If it is still toggling, the device did not complete the operation successfully, and the system must write the
reset command to return to reading array data. The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to
monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in
the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the
system must start at the beginning of the algorithm when it returns to determine the status of the
operation.
Note
When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and
DQ2 toggle between high and low states in a series of consecutive and contiguous status read cycles. In
order for this toggling behavior to be properly observed, the consecutive status bit reads must not be
interleaved with read accesses to other memory sectors. If it is not possible to temporarily prevent reads
to other memory sectors, then it is recommended to use the DQ7 status bit as the alternative method of
determining the active or inactive status of the write operation.
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DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not
successfully completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a
location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1.
Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a 0
to a 1, while any other bits that were correctly requested to be changed from 1 to 0 are programmed.
Attempting to program a 0 to a 1 is masked during the programming operation. Under valid DQ5
conditions, the system must write the reset command to return to the read mode (or to the erasesuspend-read mode if a sector was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timeout State Indicator
After writing a sector erase command sequence, the output on DQ3 can be checked to determine
whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase
command.) When sector erase starts, DQ3 switches from “0” to “1”. This device does not support
multiple sector erase (continuous sector erase) command sequences so it is not very meaningful since it
immediately shows as a “1” after the first 30h command. Future devices may support this feature.
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a
“1”. The system must issue the “Write to Buffer Abort Reset” command sequence to return the device to
reading array data.
Table 5. Write Operation Status
DQ7
(note 2)
DQ6
DQ5
(note 1)
DQ3
DQ2
(note 2)
DQ1
RY/BY#
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No
Toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Status
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write to
Buffer
Program
Suspend
Read
Erase
Suspend
Read
Program Suspended
Sector
Non-Program
Suspended Sector
Erase Suspended
Sector
Non-Erase
Suspended Sector
1
No
Toggle
Invalid (Not allowed)
1
Data
1
0
N/A
Toggle
N/A
Data
1
0
Erase Suspend Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Busy(note 3)
Abort(note 4)
DQ7#
DQ7#
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
0
0
Notes
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has
exceeded the maximum timing limits.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate
subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
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Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data
is latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector or the entire
device. Table 3 indicates the address space that each sector occupies. The device address space is
divided into uniform 64KW/128KB sectors. A sector address is the set of address bits required to
uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for the
write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write
operations.
RY/BY#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in
parallel with a pull-up resistor to VCC. This feature allows the host system to detect when data is ready to
be read by simply monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not
OE#).
Hardware Reset
The RESET# input provides a hardware method of resetting the device to reading array data. When
RESET# is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately
terminates any operation in progress, tri-states all outputs, resets the configuration register, and ignores
all read/write commands for the duration of the RESET# pulse. The device also resets the internal state
machine to reading array data.
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the
device is ready to accept another command sequence.
When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but
not at VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which
enables the system to read the boot-up firmware from the Flash memory upon a system reset.
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Software Reset
Software reset is part of the command set that also returns the device to array read mode and must be
used for the following conditions:
1. To exit Autoselect mode
2. When DQ5 goes high during write status operation that indicates program or erase cycle was not
successfully completed
3. Exit sector lock/unlock operation.
4. To return to erase-suspend-read mode if the device was previously in Erase Suspend mode.
5. After any aborted operations
The following are additional points to consider when using the reset command:
 This command resets the sectors to the read and address bits are ignored.
 Reset commands are ignored during program and erase operations.
 The reset command may be written between the cycles in a program command sequence before
programming begins (prior to the third cycle). This resets the sector to which the system was writing
to the read mode.
 If the program command sequence is written to a sector that is in the Erase Suspend mode, writing
the reset command returns that sector to the erase-suspend-read mode.
 The reset command may be written during an Autoselect command sequence.
 If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset
command returns that sector to the erase-suspend-read mode.
 If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to
Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard
RESET command does not work during this condition.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase
operations, individually, in any or all sectors and can be implemented through software and/or hardware
methods, which are independent of each other. This section describes the various methods of protecting
data stored in the memory array. An overview of these methods is shown in Figure 8.
Every main flash array sector has a non-volatile (PPB) and a volatile (DYB) protection bit associated with
it. When either bit is 0, the sector is protected from program and erase operations.
The PPB bits are protected from program and erase when the PPB Lock bit is 0. There are two methods
for managing the state of the PPB Lock bit, Persistent Protection and Password Protection.
The Persistent Protection method sets the PPB Lock to 1 during power up or reset so that the PPB bits
are unprotected. There is a command to clear the PPB Lock bit to 0 to protect the PPB bits.
There is no command in the Persistent Protection method to set the PPB Lock bit therefore the PPB
Lock bit will remain at 0 until the next power-off or reset. The Persistent Protection method allows boot
code the option of changing sector protection by programming or erasing the PPB, then protecting the
PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit. This
is sometimes called Boot-code controlled sector protection.
The Password method clears the PPB Lock bit to 0 during power up or reset to protect the PPB. A 64-bit
password may be permanently programmed and hidden for the password method. A command can be
used to provide a password for comparison with the hidden password. If the password matches the PPB
Lock bit is set to 1 to unprotect the PPB. A command can be used to clear the PPB Lock bit to 0.
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Figure 8. Advanced Sector Protection/Unprotection
Lock Register Bits (OTP)
Password Protection
Mode (DQ2)
Persistent Protection
Mode (DQ1)
64-bit Password
(OTP)
Memory Array
Dynamic Protection Bit
(DYB)
DYB 0
Sector 0
DYB 1
Sector 1
DYB 2
Sector 2
PPB 1
1
PPB 2
2
DYB 3
Sector 3
PPB 3
DYB 252
Sector 252
PPB 252
DYB 253
Sector 253
PPB 253
DYB 254
Sector 254
PPB 254
DYB 255
Sector 255
5. 0 = Sector Protected
1 = Sector Unprotected
6. DYB bits are only effective for
sectors that are not protected
via PPB (PPB = 1).
7. Volatile Bits: defaults to
unprotected after power up.
Persistent Protection Bit
(PPB)
PPB 0
PPB Lock Bit
1. 0 = PPBs Locked,
1 = PPBs Unlocked
2. Bit is volatile, and defaults to
“1” on reset.
3. Programming to “0” locks all
PPBs to their current state.
4. Once programmed to “0”,
requires hardware reset to
unlock
PPB 255
8. 0 = Sector Protected
1 = Sector Unprotected
9. PPBs programmed individually,
but cleared collectively.
The selection of the PPB Lock management method is made by programming OTP bits in the Lock Register
so as to permanently select the method used.
The Lock Register also contains OTP bits, for protecting the Secured Silicon Region.
The PPB bits are erased so that all main flash array sectors are unprotected when shipped from factory.
The Secured Silicon Region can be factory protected or left unprotected depending on customer request.
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Lock Register
The Lock Register consists of 16 bits and each of these bits in the lock register are non-volatile OTP.
The Factory Locked Secured Silicon Sector Protection Bit is DQ0 and The Customer Locked Secured
Silicon Sector Protection Bit is DQ6. If DQ0 is ‘0’, it means that the Factory Secured Silicon area is locked
and if DQ0 is ‘1’, it means that it is unlocked. Similarly, if DQ6 is ‘0’, it means that the Customer Secured
Silicon area is locked and if DQ6 is ‘1’, it means that it is unlocked. The Secure Silicon Sector Protection
Bits must be used with caution, as once locked, there is no procedure available for unlocking the protected
portion of the Secure Silicon Region and none of the bits in the protected Secure Silicon Region memory
space can be modified in any way. Once the Secure Silicon Region area is protected, any further attempts
to program in the area will fail.
The Persistent Protection Mode Lock Bit is DQ1 and the Password Protection Mode Lock Bit is DQ2. If
DQ1 is set to ‘0’, the device is used in the Persistent Protection Mode. If DQ2 is set to ‘0’, the device is
used in the Password Protection Mode. When shipped from the factory, all devices default to the Persistent
Protection method. Either DQ1 or DQ2 can be programmed by user. Once programming one of them
another one will be permanently disabled and any change is not allowed. If both DQ1 and DQ2 are
selected to be programmed at the same time, the operation will abort.
PPB Protection OTP bit is DQ3 and DYB Lock Boot Bit is DQ4. DQ3 is programmed in the ISSI factory.
When the device is programmed to disable all PPB erase command, DQ3 outputs a ‘0’ when the lock
register bits are read. Similarly, if the device is programmed to enable all PPB erase command, DQ3
outputs a ‘1’ when the lock register bits are read. Likewise the DQ4 bit is also programmed in the ISSI
Factory. DQ4 is the bit which indicates whether Volatile Sector Protection Bit (DYB) is protected or not after
boot-up. When the device is programmed to set all Volatile Sector Protection Bit protected after power-up,
DQ4 outputs a ‘0’ when the lock register bits are read. Similarly, when the device is programmed to set all
Volatile Sector Protection Bit unprotected after power-up, DQ4 outputs a ‘1’.
DQ5 and DQ15 ~ DQ7 are reserved and will be 1’s.
Table 6. Lock Register
Bit
Default
DQ15 ~ DQ7
Each Bit = 1
Description
DQ6
1
Customer Locked Secured Silicon Region Protection Bit
(0 = protected, 1 = unprotected)
DQ5
1
Reserved
DQ4
1
DQ3
1
DQ2
DQ1
1
1
DQ0
0
Reserved
DYB Lock Boot Bit
0 = protected all DYB after boot-up
1 = unprotected all DYB after boot-up
PPB One Time Programmable Bit
0 = All PPB Erase Command disabled
1 = All PPB Erase Command enabled
Password Protection Mode Lock Bit
Persistent Protection Mode Lock Bit
Factory Locked Secured Silicon Region Protection Bit
(0 = protected, 1 = unprotected)
Notes:
1. If the password mode is chosen, the password must be programmed before setting the corresponding lock register bit.
2. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for Sector 0 are disabled, while
reads from other sectors are allowed until exiting this mode.
After selecting a sector protection method, each sector can operate in any of the following three states:
1. Constantly locked: The selected sectors are protected and cannot be reprogrammed unless PPB lock bit is cleared via hardware
reset, or power cycle.
2. Dynamically locked: The selected sectors are protected and can be altered via software commands.
3. Unlocked: The sectors are unprotected and can be erased and/or programmed.
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Persistent Protection Bits
The Persistent Protection Bits are unique for each sector and nonvolatile (refer to Figure 8 and Table 3.
Sector / Persistent Protection Sector Group Address Tables). It has the same endurances as the Flash
memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not
require system monitoring. There is a command to clear the PPB Lock bit to 0 to protect the PPB. However,
there is no command in the Persistent Protection method to set the PPB Lock bit to 1 therefore the PPB
Lock bit will remain at 0 until the next power up or reset.
Notes
1. Each PPB is individually programmed and all are erased in parallel.
2. While programming PPB and data polling on programming PPB address, array data cannot be read
from any sectors.
3. Entry command disables reads and writes for all sectors selected.
4. Reads within that sector return the PPB status for that sector.
5. All Reads must be performed using the read mode.
6. The specific sector address are written at the same time as the program command.
7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without
programming or erasing the PPB.
8. There are no means for individually erasing a specific PPB and no specific sector address is required for
this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-enables
reads and writes for all sectors.
10. The programming state of the PPB for given sectors can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in Figure 9. User only can use DQ6 and
RY/BY# pin to detect programming status.
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Figure 9. PPB Program Algorithm
Note: BA = base address
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Dynamic Protection Bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs
only control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By
issuing the DYB Set or Clear command sequences, the DYBs are set (programmed to “0”) or cleared
(erased to “1”), thus placing each sector in the protected or unprotected state respectively. This feature
allows software to easily protect sectors against inadvertent changes yet does not prevent the easy
removal of protection when changes are needed.
Notes
1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the parts
are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs can be set
or cleared depending upon the ordering option chosen.
2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectors may be
modified depending upon the PPB state of that sector (see Table 7).
3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen
(programmed to “0”).
4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state.
5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotected state of the
sectors respectively. However, if there is a need to change the status of the persistently locked sectors,
a few more steps are required. First, the PPB Lock Bit must be cleared by either putting the device
through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings.
Setting the PPB Lock Bit once again locks the PPBs, and the device operates normally again.
6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in
the boot code and protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB bits
have the same function when WP#/ACC = VHH as they do when ACC =VIH.
Persistent Protection Bit Lock Bit
The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”),
it locks all PPBs and when cleared (erased to “1”), allows the PPBs to be changed. There is only one PPB
Lock Bit per device.
Notes
1. No software command sequence unlocks this bit, but only a hardware reset or a power-up clears this bit.
2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired
settings.
Password Protection Mode
The Password Protection Mode allows an even higher level of security than the Persistent Sector
Protection Mode by requiring a 64-bit password for unlocking the device PPB Lock Bit. In addition to this
password requirement, after power up and reset, the PPB Lock Bit is set “0” to maintain the password
mode of operation. Successful execution of the Password Unlock command by entering the entire
password clears the PPB Lock Bit, allowing for sector PPBs modifications.
Notes
1. The Password Program Command is only capable of programming 0’s.
2. The password is all 1’s when shipped from factory. It is located in its own memory space and is
accessible through the use of the Password Program and Password Read commands.
3. All 64-bit password combinations are valid as a password.
4. Once the Password is programmed and verified, the Password Mode Locking Bit must be set in order to
prevent reading or modification of the password.
5. The Password Mode Lock Bit, once programmed, prevents reading the 64-bit password on the data bus
and further password programming. All further program and read commands to the password region
are disabled (data is read as 1's) and these commands are ignored. There is no means to verify what
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the password is after the Password Protection Mode Lock Bit is programmed. Password verification is
only allowed before selecting the Password Protection mode.
6. The Password Mode Lock Bit is not erasable.
7. The exact password must be entered in order for the unlocking function to occur.
8. The addresses can be loaded in any order but all 4 words are required for a successful match to occur.
9. The Sector Addresses and Word Line Addresses are compared while the password address/data are
loaded. If the Sector Address don't match than the error will be reported at the end of that write cycle.
The status register will return to the ready state with the Program Status Bit set to 1, Program Status
Register Bit set to 1, and Write Buffer Abort Status Bit set to 1 indicating a failed programming
operation. It is a failure to change the state of the PPB Lock bit because it is still protected by the lack of
a valid password. The data polling status will remain active, with DQ7 set to the complement of the DQ7
bit in the last word of the password unlock command, and DQ6 toggling. RY/BY# will remain low.
10. The specific address and data are compared after the Program Buffer To Flash command has been
given. If they don't match to the internal set value than the status register will return to the ready state
with the Program Status Bit set to 1 and Program Status Register Bit set to 1 indicating a failed
programming operation. It is a failure to change the state of the PPB Lock bit because it is still protected
by the lack of a valid password. The data polling status will remain active, with DQ7 set to the
complement of the DQ7 bit in the last word of the password unlock command, and DQ6 toggling.
RY/BY# will remain low.
11. The device requires approximately 100 μs for setting the PPB Lock after the valid 64-bit password is
given to the device.
12. The Password Unlock command cannot be accepted any faster than once every 100 μs ± 20 μs. This
makes it take an unreasonably long time (58 million years) for a hacker to run through all the 64-bit
combinations in an attempt to correctly match a password. The embedded algorithm status checking
methods may be used to determine when the device is ready to accept a new password command.
13. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB Lock.
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Figure 10. Lock Register Program Algorithm
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Table 7. Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations
Table 7 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the
sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The
PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure
8 for an overview of the Advanced Sector Protection feature.
Hardware Data Protection Methods
The device offers two main types of data protection at the sector level via hardware control:
 When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific).
There are additional methods by which intended or accidental erasure of any sectors can be prevented via
hardware means. The following subsections describes these methods:
WP#/ACC Method
The Write Protect feature provides a hardware method of protecting one outermost sector. This function is
provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection
method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the
highest or lowest sector independently of whether the sector was protected or unprotected using the
method described in Advanced Sector Protection/Unprotection on page 24.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last
set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on
whether they were last protected or unprotected.
The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal pullup; when unconnected, WP# is set at VIH.
Note
If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased.
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Low VCC Write Inhibit
When VCC is less than VLKO (Lock-Out Voltage), the device does not accept any write cycles. This
protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to
reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must
provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than
VLKO.
Write Pulse “Glitch Protection”
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Power Conservation Modes
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET#
inputs are both held at VCC ± 0.3 V. The device requires standard access time (tCE) for read access,
before it is ready to read data. If the device is deselected during erasure or programming, the device draws
active current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current
specification
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when
addresses are changed. While in sleep mode, output data is latched and always available to the system.
Hardware RESET# Input Operation
The RESET# input provides a hardware method of resetting the device to reading array data. When
RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all outputs, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept another command sequence to ensure data
integrity.
When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at
VIL but not within VSS ± 0.3 V, the standby current is greater.
RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
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Output Disable (OE#)
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high
impedance state. (With the exception of RY/BY#.)
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector provides an extra Flash memory OTP area that can be programmed only once
and permanently protected from further changes. The Secured Silicon Sector is total 128 Kbytes in length
and consists of 512-byte for Factory Locked Secured Silicon Region, 512-byte for Customer Locked
Secured Silicon Region, and 127-Kbyte undefined region.
Table 8. Secured Silicon Sector Assignment
Word Address Range
Content
Size
0000000h ~ 00000FFh
Factory Locked Area
512 bytes
0000100h ~ 00001FFh
Customer Locked Area
512 bytes
0000200h ~ 3FFFFFFh
Undefined
127 Kbytes
The Secured Silicon Sector Indicator Bits DQ15-DQ0 at Autoselect address 03h is used to indicate
whether the Secured Silicon Sector is factory locked/unlocked and customer locked/unlock as well as the
lowest or highest address sector WP# protected as the following.
Secured Silicon Sector Indicator Bits
Secured Silicon Sector
Indicator Bits
DQ15 ~ DQ8
Description
Undefined
DQ7
Factory Locked Secured Silicon Region
DQ6
Customer Locked Secured Silicon Region
DQ5
Undefined
DQ4
WP# Protects
DQ3 ~ DQ0
Undefined
Data
(b = binary)
1 (Reserved)
0 = Unlocked
1 = Locked
0 = Unlocked
1 = Locked
1 (Reserved)
0 = Lowest Address Sector
1 = Highest Address Sector
1111b (Reserved)
Please note the following general conditions:
 On power-up, or following a hardware reset, the device reverts to sending commands to the normal
address space.
 Reads outside of sector SA0 return invalid data. Reads locations above 1-Kbyte address of the sector
SA0 return invalid data.
 Sector SA0 during the Secured Silicon Sector Entry Command is remapped from memory array to
Secured Silicon Sector array.
 Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command
must be issued to exit Secured Silicon Sector Mode.
 The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or
Embedded Erase algorithm.
 Regardless that the sector SA0 is suspended, if system enters Secured Silicon Sector mode, the
Secured Silicon Sector Region can be read.
 The ACC function is not available when the Secured Silicon Sector is enabled.
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IS29GL256H/L
Factory/Customer Locked Secured Silicon Region
The Customer Locked Secured Silicon Region is always shipped unprotected (Secured Silicon Sector
Indicator Bit DQ6 set to “0”), allowing customers to utilize that sector in any manner they choose.
The Factory Locked Secured Silicon Region always protected when shipped from the factory (Secured
Silicon Sector Indicator Bit DQ7 set to “1”). It may be programmed with customer code and locked by
customer request.
Please note the following:
 The Secured Silicon Region can be read any number of times, but can be programmed and locked only
once. The Secured Silicon Sector lock must be used with caution, as once locked, there is no
procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured
Silicon Sector memory space can be modified in any way.
 The accelerated programming (ACC) is not available when the Secured Silicon Sector is enabled.
 Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon
Sector Region command sequence which return the device to the memory array at sector 0.
Secured Silicon Sector Entry/Exit Command Sequences
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon Sector region until the
system issues the four-cycle Exit Secured Silicon Sector command sequence.
The Secured Silicon Sector Entry Command allows the following commands to be executed
 Read customer and factory Secured Silicon areas
 Program the customer Secured Silicon Sector
After the system has written the Enter Secured Silicon Sector command sequence, it may read the
Secured Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array.
This mode of operation continues until the system issues the Exit Secured Silicon Sector command
sequence, or until power is removed from the device.
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IS29GL256H/L
COMMON FLASH INTERFACE (CFI)
The common flash interface (CFI) specification outlines device and host systems software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC IDindependent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array
data.
The system can read CFI information at the addresses given in Tables 9~12.In word mode, the upper
address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the Autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 9~12. The system must write the reset command to return the device to the Autoselect mode.
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IS29GL256H/L
Table 9. CFI Query Identification String
Addresses
(Word Mode)
10h
11h
12h
Data
0051h
0052h
0059h
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
Query Unique ASCII string “QRY”
Table 10. System Interface String
Addresses
(Word Mode)
Data
1Bh
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Ch
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Dh
0000h
Vpp Min voltage (00h = no Vpp pin present)
1Eh
0000h
Vpp Max voltage (00h = no Vpp pin present)
1Fh
0003h
Typical timeout per single byte/word write 2N µs
20h
0008h
Typical timeout for min size buffer write 2N µs (00h = not supported)
21h
0007h
Typical timeout per individual block erase 2N ms
22h
0008h
Typical timeout for full chip erase 2 ms (00h = not supported)
23h
0005h
Max timeout for byte/word write 2N times typical
24h
0003h
Max timeout for buffer write 2N times typical
25h
0004h
Max timeout per individual block erase 2N times typical
26h
0003h
Max timeout for full chip erase 2N times typical (00h = not supported)
Description
N
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IS29GL256H/L
Table 11. Device Geometry Definition
Addresses
(Word mode)
Data
27h
0019h
Device Size = 2N bytes. 2**25=32MB=256Mb
28h
29h
0002h
0000h
Flash Device Interface Description (refer to CFI publication 100);
01h = X16 only; 02h = x8/x16
2Ah
2Bh
0009h
0000h
Max number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
00FFh
0000h
0000h
0002h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
3Dh
3Eh
3Fh
FFFFh
FFFFh
FFFFh
Description
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
256 uniform sectors (FFh + 1)
Erase Block Region 2 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification of CFI publication 100)
Reserved
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IS29GL256H/L
Table 12. Primary Vendor-specific Extended Query
Addresses
(Word Mode)
Data
40h
41h
42h
0050h
0052h
0049h
Query Unique ASCII string "PRI"
43h
0031h
Major version number, ASCII
44h
0034h
45h
0011h
46h
0002h
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0)
00 = Required, 01 = Not Required
Process Technology (Bits 5-2)
0001 = 0.18um, 0010 = 0.13um, 0011 = 90nm, 0100 = 65nm
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Minimum number of sectors per group
48h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect Scheme
00h = High Voltage Sector Protection
01h = High Voltage + In-System Sector Protection
02h = HV + In-System + Software Command Sector Protection
03h = Software Command Sector Protection
04h = Advanced Sector Protection Method
4Ah
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors
4Bh
0000h
4Ch
0003h
4Dh
0085h
4Eh
0095h
4Fh
00xxh
50h
0001h
52h
0009h
53h
000Fh
54h
0009h
55h
0005h
56h
0005h
57h
0000h
Description
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
03 = 16 Word Page
Minimum WP#/ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV
Maximum WP#/ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV
Top/Bottom Boot Sector Flag
04 = Uniform sectors bottom WP# protect
05 = Uniform sectors top WP# protect
Program Suspend
00 = Not Supported, 01 = Supported
Secured Silicon Sector (Customer OTP Area) Size 2N bytes
Hardware Reset Low Time-out during an embedded algorithm to read mode
Maximum 2N ns
Hardware Reset Low Time-out not during an embedded algorithm to read
mode Maximum 2N ns
Erase Suspend Latency Maximum 2N µs
Program Suspend Latency Maximum 2N µs
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
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IS29GL256H/L
Cycles
Table 13. IS29GL256 Command Definitions
Command
Sequence
Bus Cycles
st
1 Cycle
Addr
Data
Read
1
RA
RD
Reset
1
XXX
F0
Word
Manufacturer ID
555
4
Autoselect
Byte
Device ID
Sector Protect
Verify
Program
Write to Buffer
Program Buffer to Flash
Write to Buffer Abort
Reset
Chip Erase
Sector Erase
Erase/Program Suspend
Erase/Program Resume
Word
Byte
Word
555
AAA
555
4
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
6
1
3
6
6
555
55
2AA
555
555
AAA
555
AAA
SA
555
AAA
555
AAA
555
AAA
55
AA
2AA
555
2AA
555
227E
X0E
2222
X0F
2201
X02
7E
X1C
22
X1E
01
90
(SA)
X02
(SA)
X04
00
01
00
01
A0
PA
PD
25
SA
WC
PA
PD
WBL
PD
AAA
55
55
555
AAA
SA
29
AA
AA
AA
1
XXX
B0
1
XXX
30
2AA
555
2AA
555
2AA
555
55
55
55
555
AAA
555
AAA
555
AAA
F0
80
80
Secured Silicon Sector
Entry
Word
Byte
3
555
AAA
AA
2AA
555
55
555
AAA
88
Secured Silicon Sector
Exit
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
90
PA
PD
CFI Query
Accelerated Program
Word
Byte
1
2
55
AA
XX
th
6 Cycle
Addr
Data
X01
90
555
55
555
AA
AAA
th
5 Cycle
Addr
Data
7F
9D
7F
9D
90
555
th
4 Cycle
Addr
Data
000
100
000
200
AAA
2AA
AA
AAA
4
2AA
555
AA
rd
3 Cycle
Addr
Data
AA
AAA
4
nd
2 Cycle
Addr
Data
555
AAA
555
AAA
XX
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
30
00
98
A0
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in Autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode.
Note:
The data is 00h for an unprotected sector and 01h for a protected sector. This is same as PPB Status Read except that the protect
and unprotect statuses are inverted here
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IS29GL256H/L
Cycles
Table 14. IS29GL256 Command Definitions
Command
Sequence
Lock Register
Command Set
Entry
Password Protection
3
555
AA
Byte
nd
2 Cycle
Addr
Data
2AA
rd
3 Cycle
Addr
Data
55
555
40
AAA
40
th
4 Cycle
Addr
Data
3
AAA
AA
55
55
2
XXX
A0
XXX
Data
Read
1
00
RD
Command Set Exit
2
XXX
90
XXX
00
Word
3
555
AA
2AA
55
555
60
Byte
3
AAA
AA
55
55
AAA
60
(1)
2
XXX
A0
4
00
PWD0
01
PWD1
02
PWD2
03
PWD3
00
25
00
03
00
PWD0
01
PWD1
00
29
XXX
90
XXX
00
Password Program
Password Read
(2)
Password Unlock
Global
Non-Volatile
th
Program
Command Set
Entry
Global
Volatile Freeze
st
1 /7 Cycle
Addr
Data
Word
(2)
Command Set Exit
th
5 Cycle
Addr
Data
th
6 Cycle
Addr
Data
PWAx PWDx
02
PWD2
03
PWD3
7
2
Word
3
555
AA
2AA
55
555
C0
Byte
3
AAA
AA
55
55
AAA
C0
PPB Program
2
XXX
A0
SA
00
All PPB Erase
2
XXX
80
00
30
PPB Status Read
1
SA
RD
PPB Command Set Exit
2
XXX
90
XXX
00
PPB Lock
Command Set
Entry
Word
3
555
AA
2AA
55
555
50
Byte
3
AAA
AA
555
55
AAA
50
PPB Lock Set
2
XXX
A0
XXX
00
PPB Lock Status Read
1
XXX
RD
PPB Lock Command Set
Exit
2
XXX
90
XXX
00
Word
3
555
AA
2AA
55
555
E0
Byte
3
AAA
AA
555
55
AAA
E0
DYB Set
2
XXX
A0
SA
00
DYB Clear
2
XXX
A0
SA
01
DYB Status Read
1
SA
RD
DYB Command Set Exit
2
XXX
90
XXX
00
PPB Command
Set Entry
DYB Command
Set Entry
Volatile
Bus Cycles
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits Amax–A16 uniquely select any sector.
PWD = Password
PWDx = Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit,
PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection Mode Lock Bit.
Note:
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IS29GL256H/L
Table 15. DC Characteristics
(Ta = - 40°C to 125°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V VIN  Vcc
±1
µA
ILO
Output Leakage Current
0V VOUT  Vcc
±1
µA
ICC1
VCC Active Read Current
IIO2
VIO Non-Active Output
CE# = VIL , OE# = VIH
VCC Intra-Page Read
Current
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 10 MHz
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 33 MHz
ICC3
VCC Active Erase/
Program Current
ICC4
ICC5
ICC2
ICC6
IACC
5MHz
15
30
mA
10MHz
25
45
mA
0.2
10
mA
1
10
5
15
CE# = VIL , OE# = VIH , VCC = VCCmax
20
40
mA
VCC Standby Current
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH , VCC = VCC max
VIL = Vss + 0.3 V/-0.1V,
2.0
20
µA
VCC Reset Current
RESET# = Vss ± 0.3V
2.0
20
µA
50
500
µA
Automatic Sleep Mode
VIH = VIO, VIL = Vss
Vcc= VCCmax, tACC + 30ns
VIH = VIO, VIL = Vss
Vcc= VCCmax, tASSB
2.0
20
µA
3
10
15
30
ACC Accelerated Program
Current
CE# = VIL; OE# = VIH ;
VCC = VCCmax
CE# = VIL, OE# = VIH,
VCC = VCCmax,
WP#/ACC = VHH
mA
WP#/ACC pin
VCC pin
mA
VIL
Input Low Voltage
-0.5
VIH
Input High Voltage
0.7 x
VIO
0.3 x
VIO
VIO +
0.3
VHH
Acceleration Program
Voltage
8.5
9.5
V
VOL
Output Low Voltage
0.15 x
VIO
V
VOH
VLKO
Output High Voltage
CMOS
Supply voltage (Erase and
Program lock-out)
IOL = 100μA
IOH = -100μA
0.85 x
VIO
2.1
V
V
V
2.4
V
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not
at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = VCCmax.
3. Not 100% tested.
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IS29GL256H/L
Figure 11. Test Conditions
Device Under Test
CL
Table 16. Test Specifications
Test Conditions
70ns
Unit
Vcc
2.7-3.6
V
Output Load Capacitance, CL
30
pF
Input Rise and Fall times
5
ns
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
0.0-VIO
V
0.5VIO
V
0.5VIO
V
B
B
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IS29GL256H/L
AC CHARACTERISTICS
Table 17. Read-only Operations Characteristics
(TA = - 40°C to 125°C; VCC = 2.7-3.6V)
Parameter
Symbols
JEDEC
Standard
Speed
Test Setup
Description
Unit
70ns
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable To Output Delay
tPACC
tGLQV
Min
70
ns
CE# = VIL
OE#= VIL
Max
70
ns
OE#= VIL
Max
70
ns
Page Access Time
Max
15
ns
tOE
Output Enable to Output Delay
Max
25
ns
tEHQZ
tDF
Chip Enable to Output High Z
Max
15
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
15
ns
tAXQX
tOH
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
Min
0
ns
Output Enable
Hold Time
Min
0
ns
tOEH
Min
10
ns
Read
Toggle and
DATA# Polling
Notes:
1. High Z is Not 100% tested.
Figure 12. AC Waveforms for READ Operations
tBRCB
Addresses
Addresses Stable
tBACC
CE#
tBDF
tBOEB
OE#
tBOEHB
WE#
tBCEB
HIGH Z
Outputs
tBOH
Output Valid
HIGH Z
RESET#
RY/BY#
0V
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IS29GL256H/L
Figure 13. Page Read Operation Timings
A23
Note: Addresses are A2:A-1 for byte mode.
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IS29GL256H/L
AC CHARACTERISTICS
Table 18. Hardware Reset (RESET#)
Parameter
Std
Description
Test
Setup
Speed
70ns
Unit
tRP1
RESET# Pulse Width (During Embedded Algorithms)
Min
200
ns
tRP2
RESET# Pulse Width (NOT During Embedded Algorithms)
Min
200
ns
tRH
Reset# High Time Before Read
Min
50
ns
tRB1
RY/BY# Recovery Time ( to CE#, OE# go low)
Min
0
ns
tRB2
RY/BY# Recovery Time ( to WE# go low)
Min
50
ns
Max
20
us
Max
500
ns
tREADY1
tREADY2
Reset# Pin Low (During Embedded Algorithms)
to Read or Write
Reset# Pin Low (NOT During Embedded Algorithms)
to Read or Write
Figure 14. AC Waveforms for RESET#
Reset# Timings
tRB1
CE#, OE#
WE#
tREADY1
tRB2
RY/BY#
RESET#
tRP1
Reset Timing during Embedded Algorithms
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IS29GL256H/L
CE#, OE#
tRH
RY/BY#
RESET#
tRP2
tREADY2
Reset Timing NOT during Embedded Algorithms
AC CHARACTERISTICS
Table 19. Word / Byte Configuration (BYTE#)
Std
Parameter
Description
Test
Setup
Speed
tBCS
Byte# to CE# switching setup time
Min
0
ns
tCBH
CE# to Byte# switching hold time
Min
0
ns
tRBH
RY/BY# to Byte# switching hold time
Min
0
ns
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Unit
54
IS29GL256H/L
Figure 15. AC Waveforms for BYTE#
CE#
OE#
Byte#
tCBH
tBCS
Byte# timings for Read Operations
CE#
WE#
Byte#
tBCS
tRBH
RY/BY#
Byte #timings for Write Operations
Note: Switching BYTE# pin not allowed during embedded operations
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IS29GL256H/L
AC CHARACTERISTICS
Table 20. Write (Erase/Program) Operations
Parameter
Symbols
Speed
Description
Unit
JEDEC
Standard
70ns
tAVAV
tWC
Write Cycle Time
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
Min
0
ns
tOEH
Output Enable
Hold Time
Min
10
ns
Min
0
ns
Read
Toggle and
DATA# Polling
Read Recovery Time before
Write (OE# High to WE# Low)
tGHWL
tGHWL
tELWL
tCS
CE# SetupTime
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
25
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
ns
Write Buffer Program Operation
(Note 2, 3)
Typ
160
µs
Typ
8
µs
Max
200
µs
tWHWH1
tWHWH2
tWHWH1
Programming Operation
(Word and Byte Mode)
Typ
0.1
s
Max
2
s
Chip Erase Operation
Typ
30
s
tVHH
VHH Rise and Fall Time
Min
250
ns
tVCS
Vcc Setup Time
Min
50
µs
WE# High to RY/BY# Low
Max
70
ns
Recovery Time from RY/BY#
Min
0
ns
tWHWH2
t BUSY
B
tRB
Sector Erase Operation
Notes: 1. Not 100% tested.
2. See table.22 Erase and Programming Performance for more information.
3. For 1~256 words program.
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IS29GL256H/L
AC CHARACTERISTICS
Table 21. Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Speed
Description
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time
Min
70
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time before
Write (OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# SetupTime
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
35
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
Write Buffer Program Operation
(Note 2, 3)
Typ
160
µs
tWHWH1
tWHWH2
tWHWH1
tWHWH2
70ns
Programming Operation
(Word and Byte mode)
Sector Erase Operation
Typ
8
µs
Max
200
µs
Typ
0.1
s
Max
2
s
Notes: 1. Not 100% tested.
2. See table.22 Erase and Programming Performance for more information.
3. For 1~256 words bytes programmed.
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AC CHARACTERISTICS
Figure 16. AC Waveforms for Chip/Sector Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tAS
tWC
Addresses
es
0x2AA
Read Status Data (last two cycles)
tAH
SA
VA
VA
0x555 for chip
erase
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
Data
0x55
tDS
tWHWH2
0x30
tDH
Status
10 for chip
erase
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
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IS29GL256H/L
Figure 17. Program Operation Timings
Program Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x555
Program Command Sequence (last 2 cycles)
tAH
PA
PA
PA
CE#
tGHWL
OE#
tCH
tWP
WE#
tWPH
tWHWH1
tCS
Data
OxA0
tDS
RY/BY#
Status
PD
tDH
tBUSY
DOUT
tRB
tVCS
VCC
Notes:
1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address.
2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command
sequence.
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IS29GL256H/L
Figure 18. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
tRC
Addresses
VA
VA
VA
tACC
tCH
tCE
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ[7]
Complement
DQ[6:0]
Status Data
Comple
-ment
Status
Data
Valid Data
True
True
Valid Data
tBUSY
RY/BY#
Notes:
1. VA=Valid Address for reading Data# Polling status data
2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle.
Figure 19. AC Waveforms for Toggle Bit During Embedded Algorithm Operations
tRC
Addresses
VA
tCH
VA
VA
VA
tACC
tCE
CE#
tOE
OE#
tOEH
WE#
tDF
tOH
Valid Status
DQ6, DQ2
tBUSY
(first read)
Valid Status
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Figure 20. Alternate CE# Controlled Write Operation Timings
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IS29GL256H/L
PA for Program
SA for Sector Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
Addresses
VA
tWC
tAS
tAH
WE#
tWH
tGHEL
OE#
tCP
tCPH
tWHWH1 / tWHWH2
tWS
CE#
tDS
tBUSY
tDH
Status
Data
0xA0 for
Program
0x55 for Erase
RY/BY
#
DOUT
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
tRH
Reset#
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
Dout = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 21. DQ2 vs. DQ6
Enter
Embedded
Erase
WE#
Enter Erase
Suspend
Program
Erase
Suspend
Erase
Enter
Suspend
Read
Erase
Resume
Enter
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
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TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Sector Erase Time
0.1
2
sec
Chip Erase Time
30
240
sec
Byte Programming Time
8
200
µs
Word Programming Time
8
200
µs
Byte
134.4
800
Word
67.2
400
Total Write Buffer time
160
1000
ACC Total Write Buffer time
60
400
Erase/Program Endurance
100K
Chip Programming
Time
sec
Comments
Excludes 00h programming prior
to erasure
Excludes system level overhead
µs
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkerboard
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 24. DATA RETENTION
Parameter Description
Data Retention Time
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IS29GL256H/L
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
o
Storage Temperature
-65 C to +150oC
Plastic Packages
-65oC to +125oC
Ambient Temperature With Power Applied
-65oC to +125oC
Surface Mount Lead Soldering Temperature
Standard Package
240oC 3 Seconds
Lead-free Package
260oC 3 Seconds
Output Short Circuit Current1
200mA
A9 and WP#/ACC2
Voltage with Respect to Ground
All other pins
-0.5V to 9.5V
3
-0.5V to VCC + 0.5V
Vcc, VIO
-0.5V to +4.0V
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC input voltage on A9 and WP#/ACC pins is –0.5V. During voltage transitions, A9 and WP#/ACC pins may undershoot
Vss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on A9
and WP#/ACC is 8.5V which may overshoot to 9.5V for periods up to 20ns.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of
up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods up to 20ns. See figure below.
4.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating
only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the
maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES 1
P
P
Parameter
Ambient Operating
Temperature (TA)
Value
Extended Grade
-40°C to 105°C
V Grade: Hybrid Flow
-40°C to 125°C
Automotive Grade A1
-40°C to 85°C
Automotive Grade A2
-40°C to 105°C
Automotive Grade A3
-40°C to 125°C
VCC Power Supply
2.7V (VCCmin) – 3.6V (VCCmax); 3.3V (Typ)
VIO Power Supply
1.65V (VIOmin) – Vccmax+0.2V (VIOmax); 1.8V (Typ)
Note1.
Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+2.0V
Maximum Negative Overshoot
Waveform
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Maximum Positive Overshoot
Waveform
63
IS29GL256H/L
FIGURE 22. 56L TSOP 14mm x 20mm package outline
SYMBOL
MIN.
--0.05
0.95
--------0.17
0.5
0.08
DIMENSION IN MM
NOR
----1.00
20.00
18.40
14.00
0.50
0.22
0.60
0.15
MAX
1.20
0.15
1.05
--------0.27
0.70
0.20
30
50
A
A1
A2
D
D1
E
e
b
L
R
θ
00
Note : 1. Coplanarity: 0.1 mm
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IS29GL256H/L
FIGURE 23. 64-ball Ball Grid Array (BGA), 11 X13 mm, Pitch 1mm package outline
SYMBOL
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DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
1.40
A1
0.40
0.50
0.60
A2
0.60
0.66
0.76
D
12.90
13.00
13.10
E
10.90
11.00
11.10
D1
---
7.00
---
E1
---
7.00
---
e
---
1.00
---
b
0.50
0.60
0.70
65
IS29GL256H/L
FIGURE 24. 64-ball Ball Grid Array (BGA), 9 X 9 mm, Pitch 1mm package outline
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FIGURE 25. 56-ball Ball Grid Array (BGA), 7 X 9 mm, Pitch 0.8mm package outline
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IS29GL256H/L
ORDERING INFORMATION
IS29GL256 H
-
70
S
L
E
TEMPERATURE RANGE
E = Extended (-40°C to +105°C)
V = Hybrid Flow (-40°C to +125°C)
A1 = Automotive Grade (-40°C to +85°C)
A2 = Automotive Grade (-40°C to +105°C)
A3 = Automotive Grade (-40°C to +125°C)
PACKAGING CONTENT
L = RoHS compliant
PACKAGE
S = 56-pin TSOP
G = 64-ball BGA 1.0mm pitch, 11mm x 13mm
F = 64-ball BGA 1.0mm pitch, 9mm x 9mm
D = 56-ball BGA 0.8mm pitch, 7mm x 9mm
SPEED
70 = 70ns
SECTOR for WRITE PROTECT (WP#/ACC=L)
H = highest address sector protected
L = lowest address sector protected
BASE PART NUMBER
IS = Integrated Silicon Solution Inc.
29GL = FLASH, 3V Page Mode Flash Memory
256 =256 Megabit (32M x 8 / 16M x 16)
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IS29GL256H/L
Density
256Mb
Speed
Order Part Number
(1)
Sector for
Write Protect
(WP#/ACC=L)
Package
IS29GL256H-70SLE
IS29GL256H-70SLV
High
56-pin TSOP
IS29GL256H-70GLE
IS29GL256H-70GLV
High
64-ball BGA (11x13mm)
IS29GL256H-70FLE
IS29GL256H-70FLV
High
64-ball BGA (9x9mm)
IS29GL256H-70DLE
IS29GL256H-70DLV
High
56-ball BGA (7x9mm)
IS29GL256H-70SLA*
High
56-pin TSOP
IS29GL256H-70GLA*
High
64-ball BGA (11x13mm)
IS29GL256H-70FLA*
High
64-ball BGA (9x9mm)
IS29GL256H-70DLA*
High
56-ball BGA (7x9mm)
IS29GL256H-70WLE
High
KGD (Call Factory)
70ns
IS29GL256L-70SLE
IS29GL256L-70SLV
Low
56-pin TSOP
IS29GL256L-70GLE
IS29GL256L-70GLV
Low
64-ball BGA (11x13mm)
IS29GL256L-70FLE
IS29GL256L-70FLV
Low
64-ball BGA (9x9mm)
IS29GL256L-70DLE
IS29GL256L-70DLV
Low
56-ball BGA (7x9mm)
IS29GL256L-70SLA*
Low
56-pin TSOP
IS29GL256L-70GLA*
Low
64-ball BGA (11x13mm)
IS29GL256L-70FLA*
Low
64-ball BGA (9x9mm)
IS29GL256L-70DLA*
Low
56-ball BGA (7x9mm)
IS29GL256L-70WLE
Low
KGD (Call Factory)
Note:
1. A* = A1, A2, A3: Meets AEC-Q100 requirements with PPAP, V = Hybrid Flow non-Auto qualified.
o
o
o
o
o
Temp Grades: E= -40 to 105 C, V= -40 to 125 C , A1= -40 to 85 C, A2= -40 to 105 C, A3= -40 to 125 C
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Appendix-1 ADDITIONAL OPERATING MODES
Appendix table 1. ADDITIONAL OPERATION MODES
AM A11
to to A9
CE# WE# OE# A12 A10
Control Input
Item
A8
to
A7
A6
A5
to
A4
A3
to
A2
A1
A0
Q7 ~ Q0
Q15 ~ Q8
Sector Lock Status
Verification
L
H
L
SA
X
VHH
X
L
X
L
H
L
01h or 00h(1)
X
Read Silicon ID
Manufacturer Code
L
H
L
X
X
VHH
X
L
X
L
L
L
9Dh
X
Cycle 1
L
H
L
X
X
VHH
X
L
X
L
L
H
7Eh
22h(Word),
XXh(Byte)
Cycle 2
L
H
L
X
X
VHH
X
L
X
H
H
L
22h
22h(Word),
XXh(Byte)
Cycle 3
L
H
L
X
X
VHH
X
L
X
H
H
H
01h
22h(Word),
XXh(Byte)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
L
H
L
X
X
VHH
X
L
X
L
H
H
FFh (factory locked),
7Fh (factory unlocked)
BFh (customer locked),
3Fh (customer unlocked)
X
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
L
H
L
X
X
VHH
X
L
X
L
H
H
EFh (factory locked),
6Fh (factory unlocked)
AFh (customer locked),
2Fh (customer unlocked)
X
Lower Software Bits
L
H
L
X
X
VHH
X
L
X
H
L
L
3h
X
Read Silicon ID
Notes:
1. Sector unprotected code: 00h. Sector protected code: 01h.
2. Factory locked /customer locked code: WP# protects highest address sector: FFh
WP# protects lowest address sector: EFh
3 .Factory unlocked / customer locked code: WP# protects highest address sector: 7Fh
WP# protects lowest address sector: 6Fh
4. Factory locked / Customer unlocked code: WP# protects highest address sector: BFh
WP# protects lowest address sector: AFh
5. Factory unlocked / Customer unlocked code: WP# protects highest address sector: 3Fh
WP# protects lowest address sector: 2Fh
6. AM: MSB of address.
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, SA = Sector Address In
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