BUZ 70 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 70 L 60 V 12 A 0.15 Ω TO-220 AB C67078-S1325-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 33 °C Values Unit A 12 IDpuls Pulsed drain current TC = 25 °C 48 Avalanche current,limited by Tjmax IAR 12 Avalanche energy,periodic limited by Tjmax EAR 1 Avalanche energy, single pulse EAS mJ ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C 6 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 °C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 70 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 60 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS µA VDS = 60 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 6 A Semiconductor Group nA - 2 0.12 0.15 07/96 BUZ 70 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 6 A Input capacitance 2 pF - 420 560 - 160 250 - 60 110 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 7.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 15 25 - 55 80 - 45 60 - 40 55 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 70 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 48 V 1.5 1.8 trr ns - 60 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 12 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 25 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.1 - 07/96 BUZ 70 L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 45 13 A W 11 Ptot ID 35 10 9 30 8 25 7 20 6 5 15 4 3 10 2 5 1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TC °C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 t = 20.0µs p K/W A I D 100 µs ZthJC 10 1 V DS (o n) = DS / ID 10 0 1 ms R 10 -1 D = 0.50 10 ms 0.20 10 0 0.10 0.05 10 -2 DC 0.02 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 70 L Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 28 0.45 Ptot = 40W A l kj i h VGS [V] a 2.5 22 f 20 18 16 e 14 12 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 d i 7.0 10 j 8.0 8 k 9.0 l 10.0 c 6 3.0 e 0.25 0.20 0.15 4.0 f g hi j k 0.10 0.05 a 2.0 d 0.30 b 1.0 c RDS (on)0.35 4 2 0 0.0 b Ω g 24 ID a 5.0 V VGS [V] = a 2.5 3.0 b 3.5 0.00 0 6.5 c 4.0 d 4.5 4 e f 5.0 5.5 8 g 6.0 12 h i 7.0 8.0 16 VDS j 9.0 k 10.0 A 24 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 10 30 A S 26 ID 24 gfs 22 8 7 20 6 18 16 5 14 4 12 10 3 8 2 6 4 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 4 8 12 16 20 A ID 07/96 28 BUZ 70 L Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 6 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.70 4.6 Ω V 0.60 4.0 RDS (on)0.55 VGS(th) 0.50 3.6 3.2 0.45 2.8 0.40 2.4 0.35 98% 2.0 0.30 typ 0.25 98% 0.20 typ 1.6 2% 1.2 0.15 0.8 0.10 0.4 0.05 0.00 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss Coss 10 -1 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 70 L Avalanche energy EAS = ƒ(Tj ) parameter: ID = 12 A, VDD = 25 V RGS = 25 Ω, L = 48.6 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 18 A 6.5 16 mJ V 5.5 EAS VGS 5.0 12 4.5 10 4.0 3.5 0,2 VDS max 8 0,8 VDS max 3.0 2.5 6 2.0 4 1.5 1.0 2 0.5 0.0 20 0 40 60 80 100 120 °C 160 Tj 0 4 8 12 16 20 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 26 BUZ 70 L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96