Advance Technical Information IXTT2N300P3HV IXTH2N300P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 3000V = 2A 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 3000 V VDGR TJ = 25C to 150C, RGS = 1M 3000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 2.0 A ID110 TC = 110C 1.6 A IDM TC = 25C, Pulse Width Limited by TJM 6.0 A PD TC = 25C 520 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-268HV TO-247HV G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features High Blocking Voltage High Voltage Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 3000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 1A, Note 1 5.0 V Applications V 100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved 10 A 250 μA 21 Easy to Mount Space Savings High Power Density High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems DS100686(8/15) IXTT2N300P3HV IXTH2N300P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.8 VDS = 50V, ID = 1A, Note 1 Ciss Coss TO-268HV Outline E 3.0 S 1890 pF 90 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 42 3 e Gate Input Resistance 7.7 td(on) Resistive Switching Times 21 ns PINS: 1 - Gate 2 - Source 3 - Drain 17 ns L3 69 ns 62 ns 73 nC 9 nC 40 nC td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 1.5kV, ID = 0.5 • ID25 Qgd D3 1 b A2 L 0.24 °C/W RthJC RthCS D1 2 C RGi tr 3 D2 A1 L4 E1 H 2 e A C2 D 1 pF L2 TO-247HV 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 2.0 A ISM Repetitive, Pulse Width Limited by TJM 8.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Note: 400 IF = 1A, -di/dt = 100A/s 250 VR = 100V, VGS = 0V TO-247HV Outline E R 0P A A2 D1 D 4 ns nC 1.3 D2 1 2 3 L1 D3 A L e 1. Pulse test, t 300s, duty cycle, d 2%. E1 0P1 Q S e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTT2N300P3HV IXTH2N300P3HV Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 2.0 3.0 VGS = 10V 1.8 VGS = 10V 2.5 6V 1.4 I D - Amperes 2.0 I D - Amperes 6V 1.6 1.5 1.2 1.0 5V 0.8 5.5V 1.0 0.6 0.4 0.5 0.2 5V 4V 0.0 0.0 0 10 20 30 40 50 60 70 80 0 20 30 40 50 60 80 90 Fig. 3. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Drain Current VGS = 10V 2.6 VGS = 10V 2.4 RDS(on) - Normalized 2.2 I D = 2A I D = 1A 1.8 100 2.8 TJ = 125ºC 2.6 RDS(on) - Normalized 70 VDS - Volts 3.4 3.0 10 VDS - Volts 1.4 2.2 2.0 1.8 1.6 1.4 1.0 1.2 0.6 TJ = 25ºC 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 0.0 150 0.5 1.0 Fig. 5. Maximum Drain Current vs. Case Temperature 2.4 1.5 2.0 2.5 I D - Amperes TJ - Degrees Centigrade Fig. 6. Input Admittance 2.0 1.8 2.0 1.6 1.4 I D - Amperes I D - Amperes 1.6 1.2 0.8 1.2 TJ = 125ºC 1.0 25ºC 0.8 -40ºC 0.6 0.4 0.4 0.2 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2015 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTT2N300P3HV IXTH2N300P3HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 5 6 4.5 TJ = - 40ºC 5 4 4 25ºC I S - Amperes g f s - Siemens 3.5 3 125ºC 2.5 2 3 TJ = 125ºC 2 1.5 TJ = 25ºC 1 1 0.5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.3 0.4 0.5 0.6 I D - Amperes Fig. 9. Gate Charge 0.8 0.9 1.0 Fig. 10. Capacitance 10,000 10 f = 1 MHz VDS = 1500V Capacitance - PicoFarads I D = 1A 8 I G = 10mA VGS - Volts 0.7 VSD - Volts 6 4 Ciss 1,000 Coss 100 2 Crss 10 0 0 10 20 30 40 50 60 0 70 Fig.5 12. Maximum Thermal Impedance 10 15Transient 20 25 30 35 1 QG - NanoCoulombs Fig. 12 Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area aaaa 0.4 10 RDS(on) Limit 40 VDS - Volts 25µs 1 Z(th)JC - ºC / W 100µs I D - Amperes 1ms 0.1 0.1 10ms TJ = 150ºC DC TC = 25ºC Single Pulse 100ms 0.01 100 1,000 10,000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_2N300P3HV (H7-P628)8-19-15