ON NRVBA140T3G Surface mount schottky power rectifier Datasheet

NRVBA140T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
This is a Pb−Free Device
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body
or Polarity Band
© Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 0
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
MARKING
DIAGRAM
B14
AYWW G
SMA
CASE 403D
PLASTIC
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NRVBA140T3G
SMA
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NRVBA140/D
NRVBA140T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 100°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
30
A
Storage Temperature
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
dv/dt
10,000
V/ms
> 400
> 8000
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 95°C)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RqJL
RqJA
35
86
°C/W
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2 for other Values
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
VF
(IF = 1.0 A)
(IF = 2.0 A)
IR
(VR = 40 V)
(VR = 20 V)
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
TJ = 25°C
TJ = 100°C
0.55
0.71
0.505
0.74
TJ = 25°C
TJ = 100°C
0.5
0.1
10
4.0
V
mA
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
NRVBA140T3G
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = -40°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
TJ = 85°C
TJ = 25°C
TJ = 125°C
0.1
0
0.2
0.6
0.4
0.8
1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E-3
1.2
100E-3
10E-3
TJ = 125°C
1.0E-3
TJ = 85°C
I R , MAXIMUM REVERSE CURRENT (AMPS)
I R , REVERSE CURRENT (AMPS)
10
100E-6
10E-3
TJ = 85°C
1.0E-3
TJ = 25°C
100E-6
TJ = 25°C
10E-6
1.0E-6
0
10
20
30
40
10E-6
1.0E-6
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
40
NRVBA140T3G
1.2
SQUARE WAVE
1.0
Ipk/Io = p
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
FREQ = 20 kHz
1.4
0.8
PFO , AVERAGE POWER DISSIPATION (WATTS)
dc
20
40
60
80
100
120
1.0
0.9
SQUARE WAVE
0.8
dc
Ipk/Io = p
0.7
Ipk/Io = 5
0.6
Ipk/Io = 10
0.5
0.4
Ipk/Io = 20
0.3
0.2
0.1
0
140
0
0.2
0.6
0.4
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1.6
T, TIME (s)
1.0E+0
100E-3
10E-3
1.0E-3
100E-6
10E-6
1.0E-3
100E-6
10E-3
1.0E+0
100E-3
10E+0
T, TIME (s)
Figure 7. Thermal Response
1000
C, CAPACITANCE (pF)
IO , AVERAGE FORWARD CURRENT (AMPS)
1.6
100
TJ = 25°C
10
1.0
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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4
35
40
100E+0
1.0E+3
NRVBA140T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE D
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.92
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.17
2.27
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
INCHES
NOM
0.085
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MIN
0.076
0.002
0.050
0.006
0.090
0.160
0.190
0.030
MAX
0.089
0.006
0.064
0.016
0.115
0.180
0.220
0.060
SOLDERING FOOTPRINT*
A
L
c
4.0
0.157
A1
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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