IRF IRHF67230 Simple drive requirement Datasheet

PD-97311
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF67230
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF67230 100K Rads (Si)
IRHF63230
300K Rads (Si)
RDS(on)
0.145Ω
ID
9.1A
0.145Ω
9.1A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of very low
RDS(on) and faster switching times reduces power
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
T0-39
Features:
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
9.1
5.7
36.4
25
0.2
±20
23
9.1
2.5
4.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
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1
09/16/11
IRHF67230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.22
—
V/°C
—
—
0.145
Ω
2.0
—
5.0
—
—
—
-9.6
—
—
—
4.0
—
—
10
25
V
mV/°C
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
45
12
30
17
30
40
25
—
nA
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 5.7A Ã
VDS = VGS, ID = 1.0mA
nC
V DS = 15V, IDS = 5.7A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 9.1A
VDS = 100V
ns
VDD = 100V, ID = 9.1A,
VGS = 12V, RG = 7.5Ω
µA
nH
Measured from Drain lead (6mm/0.25in
from package)to Source lead (6mm/0.25in
from package)with Source wire interanally
bonded from Source pin to Drain pad
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate Resistance
—
—
—
1374
214
4.2
—
—
—
pF
Ω
1.1
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
9.1
36.4
1.2
317
2.91
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 9.1A, VGS = 0V Ã
Tj = 25°C, IF = 9.1A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
5.0
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHF67230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Upto 300K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage „
Units
Test Conditions ˆ
Min
Max
200
2.0
—
—
—
—
4.0
100
-100
1.0
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
V DS= 200V, VGS= 0V
—
—
0.145
1.2
Ω
V
VGS = 12V, ID = 5.7A
VGS = 0V, ID = 9.1A
V
nA
1. Part numbers IRHF67230, IRHF63230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
42 ± 5%
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
200
200
190
2450 ± 5%
205 ± 5%
200
61 ± 5%
825 ± 5%
66 ± 7.5%
200
200
200
190
90 ± 5%
1470 ± 5%
80 ± 5%
170
170
-
-
Bias VDS (V)
250
200
LET=42 ± 5%
150
LET=61 ± 5%
100
LET=90 ± 5%
50
0
0
-5
-10
-15
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF67230
Pre-Irradiation
100
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
10
5.0V
60µs PULSE WIDTH
Tj = 25°C
1
BOTTOM
10
1
10
100
60µs PULSE WIDTH
Tj =150°C
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
10
T J = 150°C
T J = 25°C
1
VDS = 50V
60µs PULSE
15 WIDTH
0.1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
5.0V
1
0.1
ID = 9.1A
2.0
1.5
1.0
0.5
VGS = 12V
0.0
2
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHF67230
500
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance (m Ω)
Pre-Irradiation
ID = 9.1A
450
400
350
300
T J = 150°C
250
200
T J = 25°C
150
100
4
6
8
10
12
14
16
18
500
T J = 150°C
400
300
T J = 25°C
200
VGS = 12V
100
20
0
10
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
30
40
Fig 6. Typical On-Resistance Vs
Drain Current
260
5.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
20
ID, Drain Current (A)
250
240
230
220
210
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
200
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHF67230
2800
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2000
Ciss
1600
Coss
1200
800
Crss
400
ID = 9.1A
18
VGS, Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
Pre-Irradiation
16
14
12
10
8
6
4
FOR TEST CIRCUIT
SEE FIGURE 17
2
0
0
1
10
100
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
8
T J = 150°C
10
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
VDS = 160V
VDS = 100V
VDS = 40V
T J = 25°C
1.0
6
4
2
VGS = 0V
0.1
0
0
0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHF67230
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(ON)
10
100µs
1
1ms
10ms
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
EAS , Single Pulse Avalanche Energy (mJ)
50
100
TOP
40
BOTTOM
ID
9.10A
5.76A
4.07A
30
20
10
0
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
D = 0.50
P DM
0.20
1
t1
0.10
t2
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHF67230
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
12V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHF67230
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L = 0.56mH
Peak IL = 9.1A, VGS = 12V
 ISD ≤ 9.1A, di/dt ≤ 347A/µs,
VDD ≤ 200V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1 - SOURCE
2 - GATE
3 - DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2011
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