PHILIPS BTA212XB Three quadrant triacs high commutation Datasheet

Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a full pack, plastic envelope
intended for use in circuits where high
static and dynamic dV/dt and high
dI/dt can occur. These devices will
commutate the full rated rms current
at the maximum rated junction
temperature, without the aid of a
snubber.
PINNING - SOT186A
PIN
BTA212X series B
QUICK REFERENCE DATA
SYMBOL
VDRM
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BTA212XRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
PIN CONFIGURATION
500B
500
600B
600
800B
800
V
12
95
12
95
12
95
A
A
SYMBOL
DESCRIPTION
case
1
main terminal 1
2
main terminal 2
3
gate
T2
T1
G
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Ths ≤ 56 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
12
A
-
95
105
45
100
A
A
A2s
A/µs
-
2
5
5
0.5
A
V
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
4.0
5.5
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ GT2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
T2+ G+
T2+ GT2- G-
VD = 12 V; IGT = 0.1 A
IT = 17 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
0.25
-
31
34
30
31
1.3
0.7
0.4
0.1
60
90
60
60
1.6
1.5
0.5
mA
mA
mA
mA
V
V
V
mA
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
full or half cycle
with heatsink compound
without heatsink compound
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
2
IGT
Gate trigger current
IL
Latching current
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 12 A;
without snubber; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000
4000
-
V/µs
-
24
-
A/ms
-
2
-
µs
dIcom/dt
tgt
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
20
BTA212X series B
BT138
Ptot / W
Ths(max) / C
45
15
BT138X
IT(RMS) / A
= 180
15
56 C
120
1
65
90
10
60
10
85
30
5
105
5
0
0
5
125
15
10
0
-50
0
50
Ths / C
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
BTA212
ITSM / A
100
25
BT138
IT(RMS) / A
20
dI T /dt limit
15
100
10
I TSM
IT
T
5
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
100
ITSM / A
80
1.6
ITSM
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
BT138
IT
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
BT136
1.4
time
Tj initial = 25 C max
1.2
60
1
40
0.8
20
0
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
September 1997
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
3
IGT(Tj)
IGT(25 C)
BTA212X series B
40
BTA212
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- G-
2.5
BT138
IT / A
typ
max
30 Vo = 1.175 V
Rs = 0.0316 Ohms
2
20
1.5
1
10
0.5
0
-50
0
50
Tj / C
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
BT138
Zth j-hs (K/W)
10
TRIAC
with heatsink compound
without heatsink compound
2.5
1
unidirectional
2
bidirectional
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
IH(Tj)
IH(25C)
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1000
TRIAC
dIcom/dt (A/ms)
BTA212
2.5
100
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
20
150
60
80
Tj / C
100
120
140
Fig.12. Typical critical rate of change of commutating
current dIcom/dt versus junction temperature.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
September 1997
40
4
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.200
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