Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTB20P03L3 BVDSS ID RDSON(MAX) -30V -10A 20mΩ Description The MTB20P03L3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit Outline MTB20P03L3 SOT-223 D S D G：Gate S：Source D：Drain MTB20P03L3 G CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=100℃ Operating Junction and Storage Temperature Range Symbol Limits Unit VDS VGS -30 ±25 -10 -8 -40 *1 -15 5 2.5 *2 3.3 1.65 -55~+175 V V A A A A mJ mJ W W °C ID IDM IAS EAS EAR PD Tj, Tstg Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 25 45 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 110°C/W when mounted on minimum copper pad Unit °C/W °C/W Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit -30 -1 -40 - -1.5 15 25 24 -3 ±100 -1 -10 20 35 - V V nA μA μA A - 2815 1060 955 - Test Conditions Static BVDSS VGS(th) IGSS IDSS IDSS ID(ON) *1 RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTB20P03L3 S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-20V, VGS=0, Tj=125°C VDS=-5V, VGS=-10V ID=-10A, VGS=-10V ID=-7A, VGS=-5V VDS=-5V, ID=-10A pF VDS=-15V, VGS=0, f=1MHz mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 12 10 35 7 25 18 7 9 4 Max. - - 32 26 -3 -12 -1.2 - Unit Test Conditions ns VDD=-15V, ID=-1A, VGS=-10V, RG=2.7Ω nC VDS=-15V, ID=-10A, VGS=-10V, Ω VGS=15mV, VDS=0, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device Package Shipping MTB20P03L3 SOT-223 (Pb-free lead plating package) 2500 pcs / Tape & Reel MTB20P03L3 CYStek Product Specification Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics On-Region Characteristics On-Resistance Variation with Drain Current and Gate Voltage 50 2.4 VGS= - 10V - 4.5V - 6.0V 40 2.0 RDS(ON) -Normalized Drain-Source On-Resistance -ID- Drain Current(A) - 4.0V 30 - 3.5V 20 10 0 - 3.0V 1 0 VGS = - 3.5 V 2.2 2 - 4.0 V 1.8 - 4.5 V 1.6 -5V 1.4 -6V 1.2 -7V 1 - 10 V 0.8 3 0 -VDS- Drain-to-Source Voltage(V) 10 20 30 - I D - Drain Current(A) 40 On-Resistance Variation with Gate-to-Source Voltage On-Resistance Variation with Temperature 1.6 0.07 I D= -9 A ID = - 5 A VGS = - 10V 0.06 RDS(ON) - On-Resistance(Ω) RDS(on) - Normalized Drain-Source On-Resistance 1.4 1.2 1.0 0.8 0.05 0.04 0.03 TA = 125°C 0.02 TA = 25° C 0.6 -50 0.01 -25 75 100 0 25 50 TJ - Junction Temperature (°C) 125 150 2 175 Transfer Characteristics 4 6 - VGS- Gate-to-Source Voltage(V) 8 10 Body Diode Forward Voltage Variation with Source Current and Temperature 100 40 VDS = - 5V VGS = 0V - 55° C 25° C TA = 125°C 20 10 -Is - Reverse Drain Current(A) 10 30 -ID- Drain Current(A) 50 TA = 125° C 1 25°C 0.1 -55°C 0.01 0.001 0 1.5 MTB20P03L3 2 2.5 3 -VGS- Gate-to-Source Voltage(V) 3.5 4 0.0001 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 CYStek Product Specification Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Gate Charge Characteristics 10 ID = - 10A f = 1 MHz VGS = 0 V VDS = - 5V 8 - VGS - Gate-to-Source Voltage(V) Capacitance Characteristics 4000 3200 - 10V Ciss Capacitance(pF) - 15V 6 4 2400 1600 800 2 0 0 6 12 Qg - Gate Charge(nC) 0 24 N) (O it Lim 50 100μ s 10ms 1s 1 10s DC VGS= -10V Single Pulse RθJA= 125°C/ W TA = 25°C 0.01 0.1 5 15 10 - VDS, Drain-to-Source Voltage(V) 1 10 -VDS - Drain-Source Voltage( V ) 25 30 Single Pulse RθJA= 125° C/ W TA = 25° C 30 20 10 0 0.001 100 20 Single Pulse Maximum Power Dissipation 40 1ms RDS 100ms 0.1 0 30 P(pk),Peak Transient Power(W) 10 18 Maximum Safe Operating Area 100 -ID - Drain Current( A ) Coss Crss 0.01 0.1 1 t 1 ,Time (sec) 10 100 1000 Transient Thermal Response Curve 1 r(t),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 0.01 PDM 0.01 t1 t2 1.Duty Cycle,D = t1 t2 2.RθJA =125°C/ W 3.TJ - TA = P * RθJA (t) Single Pulse 4.RθJA(t)=r(t) + RθJA 0.001 10 -4 MTB20P03L3 -3 10 -2 10 -1 10 t ,Time (sec) 1 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 6/9 Test Circuit and Waveforms MTB20P03L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB20P03L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB20P03L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391L3 Issued Date : 2010.12.06 Revised Date : Page No. : 9/9 SOT-223 Dimension A Marking: B Device Name C 1 2 Date Code 3 D E F H G Style: Pin 1.Gate 2.Drain 3.Source a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20P03L3 CYStek Product Specification