IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C E C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate Features Benefits Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Package Type IRGPS46160DPbF Super-247 E Emitter High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Low VCE(ON) and Switching Losses Base part number C Collector Standard Pack Form Quantity Tube 25 Orderable part number IRGPS46160DPbF Absolute Maximum Ratings VCES Parameter Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current, VGE = 15V ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C Diode Continous Forward Current Diode Maximum Forward Current IFM Max. 600 240 h 160 360 c 480 240 A h 160h f 480 PD @ TC = 25°C Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation ±20 ±30 750 PD @ TC = 100°C Maximum Power Dissipation 375 TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw VGE Units V V W -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. ––– Typ. ––– Max. 0.20 ––– ––– 0.63 RθJC (Diode) d Junction-to-Case (Diode) d RθCS Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40 RθJC (IGBT) 1 Junction-to-Case (IGBT) www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Units °C/W November 14, 2014 IRGPS46160DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ΔV(BR)CES/ΔTJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ΔVGE(th)/ΔTJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.27 1.70 2.15 2.20 — -17 77 1.0 2.3 2.4 1.9 — Max. — — 2.05 — — 6.5 — — 150 — 3.0 — ±400 Units V V/°C Conditions VGE = 0V, IC = 100μA VGE = 0V, IC = 4.0mA (25°C-175°C) IC = 120A, VGE = 15V, TJ = 25°C V IC = 120A, VGE = 15V, TJ = 150°C IC = 120A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 5.6mA mV/°C VCE = VGE, IC = 5.6mA (25°C - 175°C) S VCE = 50V, IC = 120A μA VGE = 0V, VCE = 600V mA VGE = 0V, VCE = 600V, TJ = 175°C V IF = 120A IF = 120A, TJ = 175°C nA VGE = ±20V Min. — — — — — — — — — — — — — — — — — — — — Typ. 240 70 90 5750 3430 9180 80 70 190 40 7740 4390 12130 80 75 230 55 7750 550 225 Max. — — — — — — — — — — — — — — — — — — — — Units e Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — μs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 500 130 36 — — — μJ ns A nC μJ ns μJ ns pF Conditions IC = 120A VGE = 15V VCC = 400V IC = 120A, VCC = 400V, VGE = 15V RG = 4.7Ω, L = 66μH, TJ = 25°C Energy losses include tail & diode reverse recovery g IC = 120A, VCC = 400V, VGE=15V RG = 4.7Ω, L = 66μH, TJ = 175°C Energy losses include tail & diode reverse recovery g VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 480A VCC = 480V, Vp ≤ 600V Rg = 4.7 Ω, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V Rg = 4.7 Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 120A VGE = 15V, Rg = 4.7 Ω, L = 100μH Notes: VCC = 80% (VCES), VGE = 20V, L = 66μH, RG = 4.7Ω, tested in production ILM ≤ 400A. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. Values influenced by parasitic L and C in measurement. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is 120A. Note that current limitations arising from heating of the device leads may occur. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 220 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 375W 200 Load Current ( A ) 180 160 Square Wave: 140 VCC 120 100 I 80 60 Diode as specified 40 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 250 800 700 200 600 500 Ptot (W) IC (A) 150 100 400 300 200 50 100 0 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Power Dissipation vs. Case Temperature 1000 1000 10μsec 100 10 IC A) IC (A) 100 100μsec 1msec 10 1 Tc = 25°C Tj = 175°C Single Pulse DC 0.1 1 10 100 1000 1 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE =20V Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 350 350 300 300 250 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 150 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 ICE (A) ICE (A) 250 150 100 100 50 50 0 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 350 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs -40°C 25°C 175°C 500 250 400 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 150 IF (A) ICE (A) 10 600 300 300 200 100 100 50 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 25 20 20 VCE (V) ICE = 6.0A ICE = 120A ICE = 195A 10 4.0 5.0 6.0 Fig. 9 - Typ. Diode Forward Characteristics tp = 80μs 25 15 3.0 VF (V) VCE (V) VCE (V) 8 VCE (V) VCE (V) 5 15 ICE = 6.0A ICE = 120A ICE = 195A 10 5 0 0 5 10 15 20 5 10 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 www.irf.com © 2014 International Rectifier 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 350 IC, Collector-to-Emitter Current (A) 25 VCE (V) 20 15 ICE = 6.0A ICE = 120A ICE = 195A 10 5 300 T J = -40°C T J = 25°C T J = 175°C 250 200 150 100 50 0 0 5 10 15 3 20 5 6 7 8 9 10 11 12 VGE, Gate-to-Emitter Voltage (V) VGE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 30000 1000 25000 Swiching Time (ns) td OFF 20000 Energy (μJ) 4 EON 15000 10000 100 tdON tF EOFF 5000 tR 0 10 0 50 100 150 200 250 0 50 100 150 200 250 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7Ω; VGE = 15V 30000 Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7Ω; VGE = 15V 10000 Swiching Time (ns) 25000 Energy (μJ) 20000 15000 EON 10000 tdOFF tR td ON 100 tF EOFF 5000 0 10 0 20 40 60 80 100 Rg (Ω) Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V 5 1000 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 RG (Ω) Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 40 40 RG = 4.7Ω 35 35 IRR (A) IRR (A) RG = 10Ω RG = 20Ω 30 RG = 50Ω 25 30 25 20 20 0 50 100 150 200 250 0 10 20 IF (A) 4500 4.7Ω 4000 QRR (nC) 35 IRR (A) 50 Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 40 30 25 10Ω 3500 240A 20Ω 3000 2500 120A 60A 50Ω 2000 20 350 400 450 500 550 200 600 300 400 500 600 700 800 diF /dt (A/μs) diF /dt (A/μs) Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 120A; TJ = 175°C 18 1000 700 16 900 14 800 12 700 10 600 8 500 6 400 4 300 Time (μs) 500 RG = 4.7 Ω 400 RG = 10 Ω 300 200 RG = 20Ω RG = 50 Ω 200 2 100 0 50 100 150 200 250 8 10 www.irf.com © 2014 International Rectifier 12 14 16 VGE (V) IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C Current (A) 800 600 Energy (μJ) 40 RG (Ω) Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C 6 30 Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 100000 Cies 10000 1000 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 100 0 0 20 40 60 80 100 0 50 VCE (V) 100 150 200 250 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 120A; L = 100μH Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.01 R1 R1 0.05 τJ 0.02 0.01 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.001 1E-005 0.000167 0.01606 0.000167 0.06827 0.000873 0.06827 0.007828 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 τi (sec) 0.04418 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ τJ τ1 R2 R2 R3 R3 τ2 τ1 τ2 τ3 τ3 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 Ri (°C/W) R4 R4 τC τ Ci= τi/Ri Ci i/Ri 0.001 0.0001 1E-006 R1 R1 τ4 τ4 τi (sec) 0.00441 0.000008 0.22783 0.000836 0.27340 0.004982 0.12494 0.026498 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT C sense VCC Rg 22K G force DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF 210 700 600 180 600 500 150 500 150 400 120 400 120 210 tr 90 90% ICE 100 200 60 10% ICE 60 10% tes t current 5% VCE 30 0 0 0 Eoff Loss -100 -200 -100 0 Eon Loss -100 -400 -300 -200 -100 0 -30 100 200 300 400 500 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 140 QRR 900 900 800 800 ICE 700 tRR 700 80 600 600 60 500 500 Vce (V) I F (A) 100 -30 100 200 300 400 time (ns) time(ns) 120 90 100 30 0 90% tes t current 300 40 20 0 -20 -40 -60 -200 10% Peak IRR Peak IRR 400 300 300 200 200 100 100 0 0 -100 0 200 400 time (ns) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 VCE 400 www.irf.com © 2014 International Rectifier Ice (A) 5% V CE 200 180 T ES T CUR R ENT V C E (V) 300 ICE (A) VCE (V) tf I C E (A) 700 -100 -5 0 5 10 15 time (μs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGPS46160DPbF Qualification Information† Qualification Level Moisture Sensitivity Level Industrial (per International Rectifier’s internal guidelines) Super-247 N/A Class H3B ( 8000V ) AEC-Q101-001 Human Body Model ESD Class C5 (1125V ) AEC-Q101-005 Charged Device Model RoHS Compliant †† †† Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. Revision History Date 11/14/2014 Comments fto I Diode Maximum Forward Current on page 1. • Added note gto switching losses test condition on page 2. • Added note FM IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014