ZSELEC ES1JW 1.0a glass passivated superfast recovery diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
ES1AW – ES1JW
1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE
Mechanical Data
!
!
!
!
!
!
0.10-0.30
1.4± 0.15
1.9± 0.1
! Glass passivated device
! Ideally Suited for Automatic Assembly
SOD - 123FL
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 2 5 A Peak
Cathode Band
Top View
! Low Power Loss
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
2.8 ± 0.1 1.0±0.2
Features
0.6±0.25
Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
3.7±0.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
ES1AW ES1B WES1CW ES1DW ES1EW ES1GWES1HWES1JW UNITS
VRRM
VRWM
VR
50
100
150
200
VR(RMS)
35
70
105
140
300
210
400
500
600
V
280
350
420
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
25
A
Forward Voltage
@IF = 1.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
10
500
µA
Reverse Recovery Time (Note 2)
t rr
35
nS
Typical Junction Capacitance (Note 2)
Cj
4
pF
RJL
30
°C/W
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 100°C
@TA=25°C unless otherwise specified
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
1.3
1.0
Tj, TSTG
1.7
V
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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Z ibo Seno Electronic Engineering Co., Ltd.
ES1AW – ES1JW
1.0
10
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25
50
75
100
125
150
175
1.0
0.1
Tj = 25°C
Pulse width = 300 µs
0.01
200
30
1.2
1.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
20
10
Tj = 25°C
f = 1MHz
10
1
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
trr
50Ω NI (Non-inductive)
(-)
10Ω NI
Device
Under
Test
(+)
+0.5A
(-)
0A
Pulse
Generator
(Note 2)
50V DC
Approx
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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