Rohm BD90541MUV-C Synchronous step-down converter Datasheet

Secondary power supply series for automotive
2.6V to 5.5V, 4A, 0.3MHz to 2.4MHz
Synchronous Step-Down Converter
BD90541MUV-C
General Description
Key Specifications
The BD90541MUV-C is a synchronous step-down
converter which operates in current mode. It can operate
with maximum frequency of 2.4 MHz, and can downsize
external parts such as inductor. It can supply a maximum
output current of 4A with built-in Pch and Nch output
MOSFET. Output voltage and oscillation frequency can
be adjusted by external resistors and can also be
synchronized with an external clock.






Operating Temperature Range(Ta): -40°C to +125°C
Input Voltage Range:
2.6V to 5.5V
Output Current:
4.0A(Max)
Reference Voltage Accuracy:
±1.5 %
Output Voltage Range:
0.6V to 5.0V
Switching Frequency:
0.3MHz to 2.4MHz
Package
W(Typ) x D(Typ) x H(Max)
4.00mm x 4.00mm x 1.00mm
Features
AEC-Q100 Qualified (Note 1)
Up to 2.4MHz movement
Excellent Load Response by Current Mode Control
Built-in Pch/Nch Output MOSFET.
Frequency Synchronization with External Clock.
Output Error Monitor Terminal (PGOOD Terminal)
Adjustable Output Voltage and Oscillation Frequency
by External Resistors.
 Built-in Self-Reset Type Overcurrent Protection.
 Built-in Output Overvoltage/Short Circuit Detection.
 Built-in Temperature Protection (TSD) and UVLO.
(Note 1: Grade 1)

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VQFN20SV4040
Applications
 Automotive Battery-Powered Supplies
(Cluster Panels, Car Multimedia)
 Industrial / Consumer Supplies
 Other electronic equipment
○Product structure : Silicon monolithic integrated circuit
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TSZ22111・14・001
PGND
PGOOD
CTL2
SYNC
EN
CTL1
GND
COMP
VIN
PGND
Typical Application Circuit
○This product has no designed protection against radioactive rays
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Datasheet
BD90541MUV-C
Contents
General Description ........................................................................................................................................................................ 1
Features.......................................................................................................................................................................................... 1
Applications .................................................................................................................................................................................... 1
Key Specifications .......................................................................................................................................................................... 1
Package
.................................................................................................................................................................................. 1
Typical Application Circuit ............................................................................................................................................................... 1
Contents ......................................................................................................................................................................................... 2
Pin Configurations .......................................................................................................................................................................... 3
Pin Descriptions .............................................................................................................................................................................. 3
Block Diagram ................................................................................................................................................................................ 4
Description of Blocks ...................................................................................................................................................................... 4
Absolute Maximum Ratings ............................................................................................................................................................ 6
Thermal Resistance ........................................................................................................................................................................ 6
Recommended Operating Conditions ............................................................................................................................................. 7
Electrical Characteristics................................................................................................................................................................. 8
Typical Performance Curves ........................................................................................................................................................... 9
Description of Operation and Timing Chart ................................................................................................................................... 14
Selection of Components Externally Connected ........................................................................................................................... 17
Recommended Parts Manufacturer List........................................................................................................................................ 23
Application Examples 1................................................................................................................................................................. 24
Application Examples 2................................................................................................................................................................. 26
Notes on the PCB Layout ............................................................................................................................................................. 28
Power Dissipation ......................................................................................................................................................................... 30
I/O Equivalent Circuits .................................................................................................................................................................. 31
Operational Notes ......................................................................................................................................................................... 32
Ordering Information ..................................................................................................................................................................... 34
Marking Diagrams ......................................................................................................................................................................... 34
Physical Dimension, Tape and Reel Information ........................................................................................................................... 35
Revision History ............................................................................................................................................................................ 36
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Datasheet
BD90541MUV-C
PGOOD
CTL2
SYNC
GND
COMP
PGND
EN
CTL1
PGND
VIN
Pin Configurations
VQFN20SV4040
Pin Descriptions
Pin No.
Symbol
1
SW
2
Function
Pin No.
Symbol
Function
SW pin
11
SS
Soft start time setting pin
SW
SW pin
12
FB
Output feedback pin
3
N.C
-
13
N.C
-
4
PVIN
Power supply pin for output FET
14
RT
Operating frequency setting pin
5
PVIN
Power supply pin for output FET
15
SEL
RT setting frequency/
Synchronization select pin
6
VIN
Power supply pin
16
SYNC
External clock input pin
7
EN
Enable pin
17
CTL2
Test pin
8
CTL1
Test pin
18
PGOOD
Power good output pin
9
GND
GND pin
19
PGND
GND pin for output FET
10
COMP
Error amp output pin
20
PGND
GND pin for output FET
E-Pad is a back radiation pad. Excellent radiation property is obtainable by connection to internal PCB ground-plane using
multiple via.
Use CTL1 terminal by applying 2.1 V or higher when enable is on.
Use CTL2 terminal by short-circuiting to GND.
If N.C pin is shorted to GND, heat radiation performance becomes higher.
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BD90541MUV-C
Block Diagram
Description of Blocks
・ERROR AMPLIFER
This is an error amplifier using reference voltage of 0.6V (Typ) and “FB” terminal voltage as input. (Refer to p. 21 to p. 22
for phase compensation setting method). Duty width of switching pulse is controlled with “COMP” of error amplifier output.
Output voltage is set using “FB” terminal. Phase compensation can be adjusted by connecting capacitor and resistor to
“COMP” terminal.
・SOFT START
This is a function for preventing overshoot of output voltage by gradually raising non-inverting input voltage of ERROR
AMPLIFIER to gradually increase duty of switching pulse at power on. Soft start can be set by connecting a capacitor
between “GND” terminals with “SS terminal”. (Refer to p. 22.)
・OSCILLATOR
Oscillation frequency of 0.3 MHz to 2.4 MHz can be set by connecting a resistor between “RT” terminal and “GND”
terminal in the circuit which generates pulse waveform to be input to SLOPE. (Refer to Figure 18 on p. 21)OSCILLATOR
output sends clock signal to DRV. OSCILLATOR output is also used as the clock of SCP counter.
・SLOPE
This is the block for generating saw-tooth wave from the clock formed by OSCILLATOR. Generated saw-tooth wave is
combined with feedback current of coil current and sent to PWM COMPARATOR.
・PWM COMPARATOR
This is a comparator that compares SLOPE output and ERROR AMPLIFIER output.
・DRV
This is a latch circuit having OSCILLATOR output (set) and PWM COMPARATOR output (reset) as input. It generates
PWM control signal and outputs gate signal for FET drive.
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BD90541MUV-C
・TSD (Thermal Shut Down)
This is an overheat protection circuit. In order to prevent IC thermal destruction/runaway, output is turned off when chip
temperature rises to about 150°C or higher. It is recovered when temperature returns to constant temperature. However,
since overheat protection circuit is essentially built-in for the purpose of protection of IC itself, carry out thermal design to
keep chip temperature below about 150°C as TSD detection temperature.
・OCP VTH(Over Current Protection)
This is an overcurrent protection circuit. When output Pch POWER MOS FET is turned on and voltage between drain and
source exceeds internal reference voltage value, overcurrent protection activates. This overcurrent protection is self-reset
type. When overcurrent protection activates, duty becomes small and output voltage is reduced. However, since these
protection circuits are effective in protection from destruction due to sudden accidents, avoid using them when continuous
protection circuit is in action.
・SCP (Short Current Protection)
This is a load short-circuit protection circuit. When the state of output of 60% or lower is detected in oscillation cycle × 256
(s), POWER MOS FET is turned off. If output voltage is recovered to 60% or higher before completion of 256 cycles,
POWER MOS FET is not turned off. This load short-circuit protection is cancelled after retention of oscillation cycle × 2048
(s), and it is restarted with soft start. Elongation of off time results in decrease of mean output current. During startup of
power source, this function is masked until output reaches set voltage to prevent startup failure.
・UVLO (Under Voltage Lock-Out)
This is a low voltage wrong operation prevention circuit. It prevents wrong operation of internal circuits during power
source voltage startup and when power source voltage is reduced. Power source voltage is monitored and when it is
reduced to 2.25 V (Typ) or lower, output POWER MOS FET is turned off. When UVLO is cancelled, it is restarted with soft
start. This threshold has hysteresis of 100 mV (Typ).
・VOLTAGE REFERENCE
It supplies reference voltage to internal circuits.
・OVP
When output voltage is detected to have exceeded set value + 10%, Pch FET and Nch FET of output is turned off. After
detection, when output is reduced and the overvoltage state is cancelled, switching action is restarted. There is hysteresis
of 2% in overvoltage detection voltage and cancel voltage.
・PGOOD
When output voltage is below 90% or above 110% of set value, output error state is assumed, and PGOOD terminal is
turned “Low”. There is hysteresis of 2% in detection voltage and cancel voltage. At the time of EN OFF and when UVLO
and TSD are in action, PGOOD terminal output is also turned “Low”. If VIN input voltage exceeds 2 V, PGOOD output
becomes effective. Since output is open drain type, connect pull up to VIN or an external power source with resistance of
10kΩ - 100 kΩ.
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BD90541MUV-C
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
Rating
Unit
-0.3 to 7
V
VEN
-0.3 to 7
V
SYNC Pin Voltage
VSYNC
-0.3 to VIN
V
SEL Pin Voltage
VSEL
-0.3 to 7
V
FB Pin Voltage
VFB
-0.3 to VIN
V
VCOMP
-0.3 to VIN
V
SS Pin Voltage
VSS
-0.3 to VIN
V
RT Pin Voltage
VRT
-0.3 to VIN
V
PGOOD Pin Voltage
VPGOOD
-0.3 to 7
V
Maximum Junction Temperature
Tjmax
+150
°C
Tstg
-55 to +150
°C
Supply Voltage
VIN, PVIN
EN Pin Voltage
COMP Pin Voltage
Storage Temperature Range
ESD Rating (HBM)
VESD, HBM
±2000
V
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Thermal Resistance(Note 1)
Symbol
項目
Thermal Resistance (Typ)
1s(Note 3)
2s2p(Note 4)
Unit
VQFN20SV4040
Junction to Ambient
θJA
153.9
37.4
°C / W
Junction to Top Characterization Parameter(Note 2)
ΨJT
13
7
°C / W
(Note 1) Based on JESD51-2A(Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 4) Using a PCB board based on JESD51-5,7.
Thermal Via (Note 5)
Layer Number of
Measurement Board
Material
Board Size
4 Layers
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Pitch
Diameter
1.20mm
Φ0.30mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(Note 5) This thermal via connects with the copper pattern of all layers.
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BD90541MUV-C
Recommended Operating Conditions (Ta = -40°C to +125°C)
Parameter
Symbol
Min
Max
Unit
VIN, PVIN
2.6
5.5
V
EN Pin Voltage (Note 1,2)
VEN
0
5.5
V
SEL Pin Voltage
VSEL
0
5.5
V
SYNC Pin Voltage
VSYNC
0
VIN
V
fRT
0.3
2.4
MHz
fSYNC
0.3 (Note 3)
2.4 (Note 3)
MHz
Output Voltage Range
VO
0.6 (Note 4)
5.0
V
Output Current
IO
0
4 (Note 4)
A
Input Capacitor
CIN1
11 (Note 5)
-
μF
Supply Voltage
Setting Frequency Range
External Clock Frequency Range
(Note 1)
(Note 2)
(Note 3)
(Note 4)
State enters test mode when EN terminal exceeds 6 V.
Within action power voltage range, the order of startup of power (VIN, PVIN), EN terminal and SEL terminal does not matter.
As an external signal, input frequency within ±25% of frequency set by RT resistance.
Output voltage is limited by SW minimum ON time depending on setting of input voltage and oscillation frequency. For the setting range, see setting
of output voltage of application part selection method (p. 20).
(Note 5) Ceramic capacitor is recommended. Set the capacitance value not to become below minimum value including variation, temperature property, DC
bias property and aging. Since malfunction may occur depending on substrate patterns and capacitor positions, please design the substrate
referring to cautions in substrate layout (p. 28).
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BD90541MUV-C
Electrical Characteristics
(Unless otherwise specified, -40 °C ≤ Ta ≤ +125 °C、VIN = PVIN = 5 V、VEN = 3.3 V、VCTL1 = 5 V)
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
ISDN
-
0
1
μA
VEN = 0V, Ta = 25°C
IIN
-
700
1050
μA
VFB = 0.63V, Ta = 25°C
EN ON Voltage
VEN_ON
2.1
-
-
V
EN OFF Voltage
VEN_OFF
-
-
0.7
V
EN Input Current
IEN
3
7
14
μA
VEN = 3.3V
UVLO ON Voltage
VUVLO_ON
-
2.25
2.40
V
Sweep Down
UVLO OFF Voltage
VUVLO_OFF
-
2.35
2.50
V
Sweep Up
IFB
-
0
0.5
μA
VFB = 0.6V
VREF
0.591
0.600
0.609
V
FB = COMP
ICOMP_SOURCE
-40
-20
-5
μA
COMP Sink Current
ICOMP_SINK
5
20
40
μA
SS Charge Current
ISS
-3
-2
-1
μA
VSS = 0.6V
SS Discharge Current
RSS
100
200
300
Ω
VSS = 0.6V
Operating Frequency
fOSC
0.85
1.00
1.15
MHz
R6 = 240kΩ
SW Min ON Time 1
tSW_ON1
-
100
-
ns
IO = 0A
SW Min ON Time 2
tSW_ON2
-
80
-
ns
IO = 1A
SW Min OFF Time
tSW_OFF
-
100
-
ns
SW ON-Resistance H
RON_SW_H
-
90
180
mΩ
ISW = -50mA, VFB = 0.58V
SW ON-Resistance L
RON_SW_L
-
60
120
mΩ
ISW = +50mA, VFB = 0.62V
Over-Current Detect
Current
ISW_OCP
4.5
7.5
-
A
SYNC ON Voltage
VSYNC_ON
0.8 x VIN
-
-
V
SYNC OFF Voltage
VSYNC_OFF
-
-
0.2 x VIN
V
SYNC Input Current
ISYNC
4
10
20
μA
VSYNC = 5V
VFB_PGOOD1
±6
±10
±14
%
Pull up to VIN with 10kΩ
PGOOD ON-Resistance
RPGOOD
60
120
240
Ω
VPGOOD = 5V
SEL ON Voltage
VSEL_ON
2.1
-
-
V
SEL OFF Voltage
VSEL_OFF
-
-
0.7
V
SEL Input Current
ISEL
3
7
14
μA
Standby Circuit Current
Circuit Current
FB Input Current
Reference Voltage
COMP Source Current
PGOOD Sense FB Voltage
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Datasheet
BD90541MUV-C
Typical Performance Curves(Unless otherwise specified like the condition of each item of P8)
1050
1.0
0.8
Circuit Current (µA)
Shutdown Circuit Current (µA)
950
0.6
0.4
850
750
650
550
0.2
450
0.0
350
-40
-20
0
20
40 60
80
Temperature (℃)
100 120
-40
0.610
0.608
0.608
0.606
0.606
Reference Voltage (V)
Reference Voltage (V)
0.610
0.602
0.600
0.598
0.596
0
20 40 60 80
Temperature (°C)
100 120
Figure 2. Circuit Current vs Temperature
Figure 1. Standby Circuit Current vs Temperature
0.604
-20
0.604
0.602
0.600
0.598
0.596
0.594
0.594
0.592
0.592
0.590
0.590
-40
-20
0
20 40 60 80
Temperature (°C)
2.5
100 120
3.5
4.0
4.5
Supply Voltage : VIN (V)
5.0
5.5
Figure 4. Reference Voltage vs Supply Voltage
Figure 3. Reference Voltage vs Temperature
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BD90541MUV-C
Typical Performance Curves
- continued
2.50
2.1
2.45
UVLO ON/OFF Voltage (V)
EN ON/OFF Voltage (V)
1.9
1.7
1.5
1.3
1.1
2.40
UVLO OFF
2.35
2.30
UVLO ON
2.25
2.20
0.9
2.15
0.7
2.10
-40
-20
0
20
40 60
80
Temperature (°C)
-40
100 120
Figure 5. EN ON/OFF Voltage vs Temperature
-20
0
20
40
60
80
Temperature (°C)
100
120
Figure 6. UVLO ON/OFF Voltage vs Temperature
1.15
1.20
R6 = 240kΩ
1.15
R6 = 240kΩ
1.10
Frequency (MHz)
Frequency (MHz)
1.10
1.05
1.00
0.95
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage : VIN (V)
5.5
0
20 40 60 80
Temperature (°C)
100 120
Figure 8. Frequency (1MHz) vs Temperature
Figure 7. Frequency vs Supply Voltage
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BD90541MUV-C
Typical Performance Curves
- continued
2.8
345
R6 = 75kΩ
R6 = 910kΩ
330
315
Frequency (MHz)
Frequency (kHz)
2.6
300
285
2.4
2.2
270
255
2.0
-40
-20
0
20
40
60
80
100 120
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Figure 10. Frequency (2.4MHz) vs Temperature
0.5
3.0
0.4
2.8
0.3
2.6
SS Charge Current (µA)
FB Input Current (µA)
Figure 9. Frequency (300kHz) vs Temperature
100 120
0.2
0.1
0.0
-0.1
-0.2
2.4
2.2
2.0
1.8
1.6
-0.3
1.4
-0.4
1.2
1.0
-0.5
-40
-20
0
20 40
60 80
Temperature (°C)
100 120
-20
0
20 40 60 80
Temperature (°C)
100 120
Figure 12. SS Charge Current vs Temperature
Figure 11. FB Input Current vs Temperature
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BD90541MUV-C
Typical Performance Curves
- continued
140
9
Over-Current Detect Current (A)
SW ON-Resistance (mΩ)
120
100
Pch FET
80
Nch FET
60
40
8
7
6
5
20
-40
-20
0
20
40
60
80
Temperature (°C)
-40
100 120
-20
0
100 120
Figure 14. Over-Current Detect Current vs Temperature
Figure 13. SW ON-Resistance vs Temperature
3.0
14
12
2.8
PGOOD Detect Voltage (%)
SYNC ON/OFF Voltage (V)
20 40 60 80
Temperature (°C)
2.6
2.4
2.2
PGOOD falling
10
8
PGOOD rising
6
4
2
0
-2
-4
-6
PGOOD rising
-8
-10
PGOOD falling
-12
2.0
-14
-40
-20
0
20
40
60
80
Temperature (°C)
100
120
Figure 15. SYNC ON/OFF Voltage vs Temperature
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-40
-20
0
20 40 60 80
Temperature (°C)
100 120
Figure 16. PGOOD DETECT Voltage vs Temperature
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Datasheet
BD90541MUV-C
Typical Performance Curves
- continued
180
PGOOD ON-Resistance (Ω)
160
140
120
100
80
60
-40
-20
0
20
40
60
80
Temperature (°C)
100 120
Figure 17. PGOOD ON-Resistance vs Temperature
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BD90541MUV-C
Description of Operation and Timing Chart
■
Enable control
IC operation is controlled by voltage applied on EN terminal. When Voltage of 2.1 V or higher is applied on EN terminal,
output starts in 60 μs(Typ) with soft start. Set the startup time on input voltages, VIN and PVIN, earlier than soft start
time. The circuits can be shut down by opening EN terminal or reducing its voltage to below 0.7 V.
VIN, PVIN
VEN
0.6V
VSS
60μs
Setting voltage×0.92
VO
VPGOOD
Soft start setting time
■ Protection functions
Since protection circuits are effective in protection from destruction due to sudden accidents, avoid using protection
operation continuously.
(1) Short Current Protection (SCP)
When the state of output of 60% or lower is detected in oscillation cycle × 256 (s), POWER MOS-FET is turned off. If
output voltage has recovered to 60% or higher before completion of 256 cycles, POWER MOS-FET is not turned off.
This load short-circuit protection is cancelled after retention for oscillation cycle × 2048 (s), and it is restarted with soft
start. Elongation of off time results in decrease of mean output current. During startup of power source, this function is
masked until output reaches set voltage to prevent startup failure.
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BD90541MUV-C
(2) Under Voltage Lock-Out (UVLO)
It prevents wrong operation of internal circuits during power source voltage startup and when power source voltage is
reduced. Power source voltage is monitored and when it is reduced to 2.25 V (Typ) or lower, output POWER MOS FET
is turned off. When UVLO is cancelled, it is restarted with soft start. This threshold has hysteresis of 100 mV (Typ).
(3) Thermal Shut Down (TSD)
In order to prevent IC thermal destruction/runaway, output is turned off when chip temperature rises to about 150°C or
higher. It is recovered when temperature returns to constant temperature. However, since overheat protection circuit is
essentially built-in for the purpose of protection of IC itself, carry out thermal design to keep chip temperature below
about 150°C as TSD detection temperature.
(4) Over Current Protection (OCP)
When output Pch POWER MOS FET is turned on and voltage between drain and source exceeds internal reference
voltage value, overcurrent protection activates. This overcurrent protection is self-reset type. When overcurrent
protection activates, duty becomes small and output voltage is reduced. However, since these protection circuits are
effective in protection from destruction due to sudden accidents, avoid using them when continuous protection circuit is
in action.
(5) Over Voltage Protection (OVP)
When output voltage is detected to have exceeded set value + 10%, Pch FET and Nch FET of output is turned off. After
detection, when output is reduced and the overvoltage state is cancelled, switching action is restarted. There is
hysteresis of 2% in overvoltage detection voltage and cancel voltage.
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■
Synchronization to External Clock
For external synchronization operation, connect frequency setting resistor to “RT” terminal, apply voltage of 2.1 V or
higher on “SEL” terminal, and input synchronous pulse signal to “SYNC” terminal. There is no restriction in the order of
input in “SYNC” terminal and “SEL” terminal. When voltage is applied to both terminals, it starts external synchronization
action. In case no external signal is connected to “SYNC” terminal when voltage of 2.1 V or higher is applied to “SEL”
terminal (no input is assumed in the case of being fixed at low or high), external synchronization action does not occur.
When voltage on “SEL” terminal is reduced to 0.7 V or lower, external synchronization operation ends. In this case,
operation is carried out with frequency of internal CLK from the cycle next to internal CLK. In order to finish external
synchronization operation, turn off external signal of “SYNC” terminal after “SEL” terminal input voltage becomes “Low”.
Note that output voltage varies during synchronization to external signal and switching to internal CLK frequency.
When using external synchronization, setting range of oscillation frequency is restricted by external resistance of “RT”
terminal. The setting range becomes within ±25% of RT setting frequency.
Example) When R6 = 240 kΩ,
Since set oscillation frequency is 1.0 MHz, allowable range of external synchronization operation frequency is 0.75 MHz
to 1.25 MHz.
Set LOW voltage of synchronous pulse signal to 0.2 V × VIN or lower, and HIGH voltage to 0.8 V × VIN or higher.
Set slew rate of rise (fall) at 30 V / µs or more, and duty within the range of 20% to 80%.
After 4 detections of rise of synchronous pulse, synchronization starts from the fifth rise.
Internal CLK
SYNC
SEL
SW
RT resistance setting frequency
(Internal CLK frequency)
Frequency of the
outside signal
RT resistance setting frequency
(Internal CLK frequency)
Timing chart of synchronization to external clock
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BD90541MUV-C
Selection of Components Externally Connected
Necessary parameters in designing the power supply are as follows:
Parameter
Symbol
Specification Case
Operating Temperature Range
Ta
-40 °C to +105 °C
SYNC
2.0 MHz
COMP
Typ 1.5 A / Max 4.0 A
fSW
CTL2
IO
Switching Frequency
GND
Input Range
PGOOD
10 mVp-p
CTL1
∆VPP
Output Ripple Voltage
PGND
1.2 V
EN
5V
VO
PGND
VIN
Output Voltage
VIN
Input Voltage
Application Sample Circuit
(1) Selection of Inductor
The switching regulator needs an LC filter for smoothing of output voltage in order to supply continuous current to load.
When an inductor with large inductance value is selected, ∆IL flowing in the inductor becomes small and output ripple
voltage is reduced. Furthermore, there is a trade-off between size and cost of inductance.
The inductance value of the inductor is shown in the following equation:
∆
[H]
Where:
∆
is the maximum input voltage
is the ripple current of inductor
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Set ∆IL to about 30% of maximum output current.
When ∆IL becomes small, core loss (iron loss) of inductor, loss of output capacitor due to ESR and ∆VPP become small.
∆
∆
∆
[V]
・・・・・(a)
Where:
is the equivalent series resistance of output capacitor
is the output capacitor
Since ceramic capacitors generally have ultra-low ESR, target ∆VPP can be satisfied even if ∆IL is large to some extent.
The advantage is that inductance value of inductor can be set small. Small inductance value contributes to space-saving
of sets, because large rated current enables selection of small size inductors. The disadvantages are increase of core
loss of inductor and reduction of maximum output current. When using other capacitors (electrolytic capacitor, tantalum
capacitor, electro-conductive polymer, etc.) as the output capacitor CO, confirm ESR with data sheet of the manufacturer,
and determine ∆IL to fit ∆VPP within allowable range.
Especially, since capacitance reduction of electrolytic capacitor is significant at low temperature, ∆VPP increases. Pay
attention when using it at low temperature
The maximum output electric current is limited to the overcurrent protection working current as shown in the following
equation.
∆
_
[A]
Where:
_
is the maximum output current
is the OCP operation current (Min)
A
ISWLIMIT (Min)
IO
IL
t
IL peak
In the case of continuous operation with duty ≥ 50%, current control mode may generate sub-harmonic oscillation. This
IC has a built-in slope compensation circuit for the purpose of prevention of sub-harmonic oscillation.
Since sub-harmonic oscillation depends on increase rate of output switch current IL, sub-harmonic oscillation may be
generated when inductance value is reduced to increase slope of IL.
On the other hand, when inductance value is increased to reduce slope of IL, sufficient stability may not be secured.
For stable operation, restrict inductance value within the range where the following formula is applicable
[H]
1.69
10
0.19
Where:
is the switching pulse ON Duty.
is the coefficient of current sense(2.53 µA / A)
is the slope of slope compensation current
Shield type (closed magnetic path type) inductors are recommended. There is no problem with open magnetic path type
if the application is cost-emphasized and free of annoying noise. In this case, consider layout with enough allowance
between parts, since there may be influence of magnetic field radiation on adjacent parts. Pay special attention to
magnetic saturation for ferrite-core type inductors. Core saturation should be avoided under all use conditions. Attention
is needed since rated current specification is different depending on manufacturers. Confirm rated current at maximum
ambient temperature of application with the manufacturer.
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(2) Selection of output Capacitor CO
Select output capacitor based on required ESR from formula (a). ∆VPP can be minimized by using capacitors with small
ESR. Ceramic capacitor is the best option for satisfying the requirement. In addition to exhibiting low ESR, ceramic
capacitors contribute to space saving of sets because of being small. Confirm frequency characteristics of ESR with
manufacturers’ data sheets, and select a capacitor with low ESR at switching frequency used.
Use ceramic capacitors carefully because DC bias property is remarkable. It is usually desirable that rated voltage of a
ceramic capacitor is more than twice as high as maximum output voltage. Influence of DC bias property can be reduced
by selecting a capacitor with high rated voltage. Furthermore, in order to keep good temperature characteristics,
capacitors with property higher than that of X7R are recommended.
Tantalum capacitors and electro-conductive polymer hybrid aluminum electrolytic capacitors have very good
temperature characteristics, for which electrolytic capacitors are disadvantageous. Further, since their ESR is smaller
than that of electrolytic capacitors, relatively small ripple voltage can be obtained in wide temperature range. Similar to
electrolytic capacitors, they are almost free from DC bias characteristics, and make designing easier. Usually, ones with
rated voltage about twice as high as output voltage are selected for tantalum capacitors and ones with rated voltage
about 1.2 times as high as output voltage are selected for electro-conductive polymer hybrid aluminum electrolytic
capacitors. The disadvantage of tantalum capacitors is that failure mode is short-circuiting and withstand voltage is low.
Generally, they are not selected for applications such as car-mounted applications in which reliability is required. Since
failure mode is open for electro-conductive polymer hybrid aluminum electrolytic capacitors, they are effective to meet
the reliability requirement, but they have a disadvantage of generally being expensive.
Pch step-down switching regulator lowers input voltage VIN, and when difference between input and output voltages
becomes small, switching pulse begins to disappear before 100% on-duty is reached.
As a result, when switching pulse disappears, output ripple voltage may increase.
When improvement of output ripple voltage is necessary, following measures should be considered for output capacitor
CO.
・ Use of capacitors with low ESR such as ceramic capacitors, electro-conductive polymer hybrid aluminum electrolytic
capacitors, etc.
・ Increase of capacitance value
Rated ripple current is specified for these capacitors.
Pay attention to prevent RMS value ICO(RMS) of output ripple current, obtained by the following formula, from exceeding
rated ripple current.
The RMS values of the ripple current that can be obtained in the following equation must not exceed the rated ripple
current.
∆
√
[A]
Where:
is the value of the ripple electric current
In addition, total value of capacitance with output line Co(Max), respect to CO, choose capacitance value less than the
value obtained by the following equation.
_
[F]
Where:
_
is the OCP operation switch current (Min)
is the Soft Start Time (Min)
is the maximum output current during startup
When the conditions shown above are not followed, startup failure, etc. may occur. Especially when capacitance value
is extremely large, overcurrent protection may operate due to inrush current at the time of startup and output may fail to
start. Confirm the capacitance value well with the set. Transient responsiveness and stable operation of loop depend on
CO. Select it after confirming setting of phase compensation circuit. When input voltage variation and load variation are
big, decide capacitance value after confirming it with actual application corresponding to specifications.
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(3) Selection of Input Capacitor
Ceramic capacitor is necessary for input capacitor. Ceramic capacitor is effective when placed as close as possible to
PVIN terminal. One with capacitance value of 11μF or higher and with rated voltage of 1.2 or more times as high as
maximum input voltage and twice or more as high as normal input voltage is recommended. Set the capacitance value
not to be lower than minimum values including variation, temperature characteristics, DC bias property and aging. Since
malfunction may occur depending on substrate patterns and capacitor positions, refer to precautions on substrate layout
(p. 28) for designing.
In that case, please consider not to exceed the rated ripple current of the capacitor.
The ripple current IRMS can be calculated using the following equation.
∙
[A]
Where:
is the RMS value of the input ripple electric current
As for capacitance values, high capacitance is required when input-side impedance is high, such as when wiring from
power source to PVIN terminal is long. It is necessary to verify under actual use conditions that there is no operation
problem such as output off state and overshoot of output due to reduction of VIN during transient response
(4) Setting the Output Voltage
The output voltage is determined by the equation below.
0.6
[V]
Set feedback resistance R2 at 30kΩ or lower in order to minimize error due to bias current. Set current flowing in
feedback resistance sufficiently small against output current IO, since power efficiency is reduced when R1 + R2 is
small.
Whereas output voltage can be set to 0.6 V or higher, it is limited by SW minimum ON time depending on setting of input
voltage and oscillation frequency. The minimum settable output voltage, VOUTMIN, is determined by the following
expressions.
_
_
_ _
_
_ _
_
[V]
_ _
VOUT
Where:
is the ON-Resistance H min (60mΩ)
_
_ is the ON-Resistance L min (45mΩ)
is the typ.Frequency (setting RT value)
is SW Min ON time
_ _
(90ns with load,110ns without load)
_
_
_
FB
0.6V
IFB
R3
R2
GND
The values shown above are values at 25°C. Though SW minimum ON time tends to increase when temperature rises,
variation due to temperature change is cancelled because SW ON resistance tends to increase and oscillation
frequency tends to decrease at the same time. Note that the calculation formula shown above is theoretical. Actual
properties may vary depending on substrate layout, properties of external parts, etc.
(5) Selection of Schottky Diode
The Schottky diode is optional. Depending on the application, efficiency may be improved by addition of Schottky diode
between SW terminal and PGND terminal to create current route for the time synchronous switch (Nch FET) is off.
Select Schottky diode with reverse breakdown voltage higher than input voltage and with rated current higher than
maximum inductor current (sum of maximum output current and inductor ripple current).
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(6) Setting the Oscillating Frequency
Internal oscillation frequency is set based on the value of resistance connected between RT terminal and GND. The
setting range is between 0.3MHz and 2.4MHz. Relation between resistance value and oscillation frequency is
determined as shown in the drawing below. Note that operation is not assured when the setting is out of the range,
which may cause switching to stop.
R6 [kΩ]
F [kHz]
910
310
680
400
510
520
430
600
300
830
240
1000
160
1400
130
1650
110
1880
100
2000
91
2150
82
2300
75
2450
R6 vs fSW
Figure 18. R6 vs fSW
(7) Setting the Phase Compensation Circuit
High response function is realized by setting zero cross frequency fC of total gain (frequency of gain 0 dB) high.
However, please note that it is a trade-off with stability.
Furthermore, since switching regulator application is sampled by switching frequency, and gain in switching frequency
needs to be suppressed, zero cross frequency needs to be set to 1/10 or lower of switching frequency. Characteristics
aimed at by application are as follows.
Phase-lag when gain is 1 (0 dB) is within 135° (phase margin is 45° or more).
Zero cross frequency is 1/10 or lower of switching frequency.
In order to improve responsiveness, switching frequency needs to be increased.
Phase compensation is set with capacitor and resistance connected to COMP terminal. System stability is obtained by
inserting phase lead fz1 against influence of two phase-lags fp1 and fp2 to cancel them. fp1, fp2 and fz1 are determined
as shown in the following formula.
1
[Hz]
1
[Hz]
2
[Hz]
Frequency characteristics can be optimized by setting appropriate frequencies for the pole and zero.
The typical setting is as below.
0.2
1≦
1≦2
1
[Hz]
Furthermore, phase lead fz2 can be added by inserting of C4 capacitor.
2
[Hz]
Where:
is the resistance assumed actual load[Ω] = Output Voltage[V] / Output Current[A]、
is the Error Amp Transconductance (310 µA / V)
is the Error Amp Voltage Gain (60 dB)
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BD90541MUV-C
Setting Phase Compensation Circuit
Actually, characteristics will vary depending on PCB layout, arrangement of wiring, kinds of parts used and use
conditions (temperature, etc.). Be sure to check stability and responsiveness with actual apparatus. Gain phase
analyzer or FRA is used to check frequency characteristics with actual apparatus. Contact the measurement apparatus
manufacturer for measurement method, etc. When these measurement apparatuses are not available, there is a
method of assuming margin by load response. Variation of output when the apparatus shifts from no load state to
maximum load is monitored, and it can be said that responsiveness is low if variation amount is large, and phase margin
is small if ringing occurs frequently (twice or more as a guide) after variation.
However, confirmation of quantitative phase margin is not possible.
Maximum load
Load
IO
Inadequate phase margin
Output voltage
VO
Adequate phase margin.
t
0
Measurement of Load Response
(8) Setting the Soft Start Time
Soft start is necessary for prevention of overshoot of output voltage at startup. Soft start time varies depending on
capacitance value of capacitor connected between “SS” terminal and “GND” terminal. Set the startup time on input
voltages, VIN and PVIN, earlier than soft start time. Capacitance value of 2200pF to 0.047μF is recommended.
|
.
|
[s]
(9) Setting the Input filter (RIN, CIN2)
Since VIN is used as power source voltage for internal control circuit, input filter for VIN terminal is necessary in order to
prevent malfunction due to transient VIN variation. Connect RIN of 10Ω and CIN2 of 1μF. It is necessary to verify under
actual use conditions that there is no operation problem such as output off state and overshoot of output due to
reduction of VIN during transient response.
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BD90541MUV-C
Recommended Parts Manufacturer List
Shown below is the list of the recommended parts manufacturers for reference.
Type
Manufacturer
Electrolytic capacitor
NICHICON
www.nichicon.com
Ceramic capacitor
MURATA
www.murata.com
Coil
TDK
Coil
Coilcraft
www.coilcraft.com
Coil
Sumida
www.sumida.com
Diode/Resistor
ROHM
www.rohm.com
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BD90541MUV-C
Application Examples 1
Soft Start time
TSS
1ms
Operating Temperature
Ta
-40 to +105°C
SYNC
2.0MHz
COMP
fSW
CTL2
Switching Frequency
GND
1.2V / 2A
PGOOD
VO / IO
Output Voltage / Output Current
CTL1
5V
PGND
VIN
Input Voltage
EN
Specification case
PGND
Symbol
VIN
Parameter
No
Package
Parameters
Part Name(series)
Type
Manufacturer
L1
W6.9 x H7.2 x L4.5 mm3
1μH
CLF7045-D Series
Inductor
TDK
CO1
3216
22μF, X7R, 6.3V
GCM Series
Ceramic Capacitor
MURATA
CO2
3216
22μF, X7R, 6.3V
GCM Series
Ceramic Capacitor
MURATA
CIN1
3225
22μF, X7R, 10V
GCM Series
Ceramic Capacitor
MURATA
CIN2
1608
1μF, X7R, 16V
GCM Series
Ceramic Capacitor
MURATA
CIN3
-
-
-
-
-
CIN4
1608
0.01μF, X7R, 50V
GCM Series
Ceramic Capacitor
MURATA
RIN
1608
10Ω, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R0
-
SHORT
-
-
-
R1
1608
10kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R2
1608
30kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R3
1608
30kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R4
-
-
-
-
-
R5
1608
10kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R6
1608
100kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
C1
1608
2200pF, R, 50V
GCM Series
Ceramic Capacitor
MURATA
C2
-
-
-
-
-
C3
1608
3300pF, R, 50V
GCM Series
Ceramic Capacitor
MURATA
C4
-
-
-
-
-
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BD90541MUV-C
Reference data of Application Example 1
100
90
Efficiency(%)
(%)
EFFICIENCY
80
70
60
50
40
30
20
10
0
0.01
0.10
1.00
Output Load
(A) (A)
OUTPUT
LOAD
10.00
Figure 20. Loop Response, IO = 2A
Figure 19. Efficiency vs Output Load
VO (100mV/div)
VO (100mV/div)
IO (1A/div)
IO (1A/div)
Figure 21. Load Response, IO=0A⇔2A
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Figure 22. Load Response, IO=1A⇔2A
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Application Examples 2
Soft Start time
TSS
1ms
Operating Temperature
Ta
-40 to +105°C
SYNC
2.0MHz
COMP
fSW
CTL2
Switching Frequency
GND
3.3V / 2A
PGOOD
VO / IO
Output Voltage / Output Current
CTL1
5V
PGND
VIN
Input Voltage
EN
Specification case
PGND
Symbol
VIN
Parameter
No
Package
Parameters
Part Name(series)
Type
Manufacturer
L1
W6.9 x H7.2 x L4.5 mm3
1μH
CLF7045-D Series
Inductor
TDK
CO1
3216
22μF, X7R, 6.3V
GCM Series
Ceramic Capacitor
MURATA
CO2
3216
22μF, X7R, 6.3V
GCM Series
Ceramic Capacitor
MURATA
CIN1
3225
22μF, X7R, 10V
GCM Series
Ceramic Capacitor
MURATA
CIN2
1608
1μF, X7R, 16V
GCM Series
Ceramic Capacitor
MURATA
CIN3
-
-
-
-
-
CIN4
1608
0.01μF, X7R, 50V
GCM Series
Ceramic Capacitor
MURATA
RIN
1608
10Ω, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R0
-
SHORT
-
-
-
R1
1608
20kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R2
1608
10kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R3 (1)
1608
30kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R3 (2)
1608
15kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R4
-
-
-
-
-
R5
1608
10kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
R6
1608
100kΩ, 1%, 1/16W
MCR03 Series
Chip resistor
ROHM
C1
1608
2200pF, R, 50V
GCM Series
Ceramic Capacitor
MURATA
C2
-
-
-
-
-
C3
1608
3300pF, R, 50V
GCM Series
Ceramic Capacitor
MURATA
C4
-
-
-
-
-
(Note) Please set to 45kΩ to combine 30 kΩ and 15 kΩ about R3.
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BD90541MUV-C
Reference data of Application Example 2
100
90
Efficiency (%)
EFFICIENCY
(%)
80
70
60
50
40
30
20
10
0
0.01
0.10
1.00
10.00
Output Load
(A)(A)
OUTPUT
LOAD
Figure 23. Efficiency vs Output Load
Figure 24. Loop Response, IO = 2A
VO (200mV/div)
VO (100mV/div)
IO (1A/div)
IO (1A/div)
Figure 25. Load Response, IO=0A⇔2A
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Figure 26. Load Response, IO=1A⇔2A
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BD90541MUV-C
Notes on the PCB Layout
SYNC
CTL2
N.C
N.C
PVIN
FB
PVIN
SS
VIN
or
EN
CIN2
R4
R3
C4
COMP
CIN4
RT
GND
CIN3
SW
CTL1
CIN1
SEL
EN
RIN
SW
VIN
Co2
PGOOD
L1
Vo
Co1
PGND
R5
PGND
R0
R1
C1
C3
R6
R2
C2
Exposed die pad is needed to be connected to GND.
Application Circuit (VQFN20SV4040)
①
②
③
④
⑤
⑥
⑦
Make bold line part as short as possible in wide pattern.
Arrange input ceramic capacitors CIN1, CIN3 and CIN4 as close as possible to PVIN terminal and PGND terminal.
Arrange CIN2 as close as possible to VIN terminal and GND terminal.
Arrange R6 as close as possible to RT terminal.
Arrange R2 and R3 as close as possible to FB terminal to shorten wirings from R2 and R3 to FB terminal.
Arrange R2 and R3 as far as possible from L1.
Influence of SW noise can be reduced by separating power system (input/output capacitor) GND from reference system
(RT, COMP) GND. Connect them in common GND layers as shown in the layout in the next section.
R0 is for measurement of frequency characteristics of feedback and is optional.
Insertion of resistance in R0 enables measurement of frequency characteristics of feedback (phase margin) using FRA,
etc. Under normal conditions, it is shorted.
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BD90541MUV-C
Reference layout pattern
Reference PCB Layout (TOP VIEW)
CO1
VO
PGOOD
CO2
L1
R5
GND
IC
CIN1
VIN
CIN3
CIN4
GND
C4
CIN2
R1
R6
R4
R3
R2
C3
RIN
C2 C1
SEL
EN
SYNC
Middle 1 Layer
TOP Layer
R0
Bottom Layer
Middle 2 Layer
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BD90541MUV-C
Power Dissipation
In thermal design, operate under following conditions.
(Temperatures described below are guaranteed temperatures. Be sure to consider margin, etc.)
1. Ambient temperature Ta shall be 125°C or lower.
2. Chip junction temperature Tj shall be 150°C or lower.
Chip junction temperature Tj can be considered in following 2 ways.
①
When obtained from temperature Tt at the center of top surface of package under actual use conditions:
②
When obtained from actual ambient temperature Ta:
<Reference Value>VQFN020SV4040
θjc
Top : 40 °C /W
Bottom : 15 °C /W
θja
153.9 °C / W 1-layer PCB
37.4 °C / W 4-layer PCB
ψJT
13 °C /W 1-layer PCB
7 °C /W 4-layer PCB
PCB Size 114.3 mm x 76.2 mm x 1.6 mm
The heat loss PTOTAL of the IC can be obtained by the formula shown below:
[W]
[W]
=
⋯ Heat dissipation in control circuit
⋯ Heat dissipation in output FET
[W]
_
⋯
_
1
_
_
[Ω]
⋯ On Resistance in output FET
Switching pulse duty
[W]
⋯ eat dissipation in switching
∶
is the input voltage [V]
is the circuit current [A]
is the load current [A]
is the switching pulse duty
is the H-side FET ON resistance [Ω]
_
_
_
_ is the L-side FET ON resistance [Ω]
is the switching rise and fall time [S] (Typ:7ns)
is the oscillating frequency [Hz]
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BD90541MUV-C
I/O Equivalent Circuits
SW
EN, SEL
COMP
SS
FB
RT
PVIN
SW
PGND
VIN
COMP
GND
VIN
RT
GND
SYNC
PGOOD
VIN
PGOOD
SYNC
GND
GND
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BD90541MUV-C
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the
board size and copper area to prevent exceeding the maximum junction temperature rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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BD90541MUV-C
Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 27. Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD90541MUV-C
Ordering Information
B
D
9
0
5
Product name
4
1
M
U
V
-
Package
VQFN20SV4040
CE 2
Product rank
C: Automotive rank
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagrams
VQFN20SV4040 (TOP VIEW)
Part Number Marking
9 0 5 4 1
LOT Number
1PIN MARK
Marking
90541
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Part Number Marking
BD90541MUV-CE2
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BD90541MUV-C
Physical Dimension, Tape and Reel Information
Package Name
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BD90541MUV-C
Revision History
Date
Revision
26.Apr.2016
001
Changes
New Release
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Notice
Precaution on using ROHM Products
1.
(Note 1)
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
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Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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Rev.001
Datasheet
BD90541MUV-C - Web Page
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BD90541MUV-C
VQFN20SV4040
2500
2500
Taping
inquiry
Yes
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