IRF IRKU105/12AS90 Add-a-pak gen v power modules thyristor/ thyristor Datasheet

Bulletin I27136 rev. E 10/02
IRKU/V105 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and motor
speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IRKU/V105
Units
IT(AV) @ 85°C
105
A
IT(RMS)
165
A
ITSM @ 50Hz
1785
A
@ 60Hz
1870
A
@ 50Hz
15.91
KA 2s
@ 60Hz
14.52
KA 2s
159.1
KA 2√s
2
I t
I2√t
VRRM range
TSTG
TJ
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400 to 1600
V
- 40 to 125
o
C
- 40 to130
o
C
1
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
-
Type number
IRKU/V105
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
04
400
500
400
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
IRRM
IDRM
130°C
mA
20
On-state Conduction
Parameters
IT(AV)
IRKU/V105
Max. average on-state
current
IT(RMS) Max. RMS on-state
current.
ITSM
@ TC
105
165
77
180o conduction, half sine wave,
A
DC
1785
t=10ms
No voltage
non-repetitive on-state
1870
t=8.3ms
reapplied
current
1500
t=10ms
100% VRRM
t=8.3ms
reapplied
2000
t=10ms
TJ = 25oC,
2100
t=8.3ms
no voltage reapplied
15.91
t=10ms
No voltage
Max. I2t for fusing
11.25
10.27
A
2
KA s
20.00
18.30
Max. I2√t for fusing (1)
VT(TO) Max. value of threshold
voltage (2)
rt
VTM
159.1
K A2√s
0.80
0.85
Max. value of on-state
2.37
slope resistance (2)
2.25
1.64
mΩ
V
150
A/µs
current
Max. holding current
200
IL
Max. latching current
400
t=8.3ms
reapplied
t=10ms
TJ = 25oC,
t=8.3ms
no voltage reapplied
t= 0.1 to 10ms, no voltage reappl., TJ =TJ max.
TJ = TJ max
High level (4)
Low level (3)
TJ = TJ max
High level (4)
ITM = π x IT(AV)
TJ = 25°C
IFM = π x IF(AV)
ITM =π x IT(AV), I = 500mA,
g
TJ = 25oC, anode supply = 6V,
mA
2
Initial TJ = TJ max.
tr < 0.5 µs, t p > 6 µs
IH
(1) I2t for time t = I2√t x √t .
x
x
(3) 16.7% x π x IAV < I < π x IAV
reapplied
100% VRRM
Initial TJ = TJ max.
T J = 25oC, from 0.67 VDRM,
Max. non-repetitive rate
of rise of turned on
t=8.3ms
t=10ms
Sinusoidal
half wave,
Low level (3)
V
Max. peak on-state
voltage
di/dt
TC = 85oC
°C
14.52
I2√t
Conditions
Max. peak, one cycle
1570
I2t
Units
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(4) I > π x IAV
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IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Triggering
Parameters
PGM
IRK.U/V105
Max. peak gate power
PG(AV) Max. average gate power
IGM
IGT
VGD
Max. peak gate current
3
A
10
Max. gate voltage
4.0
required to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
Max. gate current
required to trigger
V
270
150
80
TJ = - 40°C
Anode supply = 6V
resistive load
TJ = - 40°C
TJ = 25°C
TJ = 125°C
mA
Max. gate voltage
Anode supply = 6V
resistive load
o
0.25
V
TJ = 125 C,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
IRKU/V 105
Units
20
mA
that will not trigger
IGD
Conditions
W
3
-VGM Max. peak negative gate voltage
VGT
Units
12
Max. gate current
that will not trigger
Blocking
Parameters
IRRM
Max. peak reverse and
IDRM
off-state leakage current
VINS
RMS isolation voltage
Conditions
TJ = 130oC, gate open circuit
at VRRM, VDRM
2500 (1 min)
50 Hz, circuit to base, all terminals
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
shorted
500
TJ = 130oC, linear to 0.67 VDRM,
gate open circuit
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRKU/V105
TJ
Junction operating temperature
range
- 40 to 130
Tstg
Storage temperature range
- 40 to 125
RthJC Max. internal thermal resistance,
Units
°C
0.135
Per module, DC operation
junction to case
K/W
RthCS Typical thermal resistance
wt
Mounting surface flat, smooth and greased
0.1
case to heatsink
T
Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Mounting torque ± 10%
to heatsink
5
busbar
3
Approximate weight
Nm
110 (4)
Case style
g (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Devices
IRKU/V105
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Rect. wave conduction
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/W
3
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Ordering Information Table
Device Code
IRK
U
105
1
2
3
/
16
A
S90
4
5
6
IRK.106 types
With no auxiliary cathode
1
-
2
-
Module type
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
* * Available with no auxiliary cathode.
To specify change:
105 to 106
e.g. : IRKU106/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKU
(1)
+
IRKV
(1)
-
+
-
(2)
(2)
-
+
(3)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRKU/V105 Series
IRK.105.. Series
R thJC (DC) = 0.27 K/W
120
110
Conduction Angle
100
90
30°
60°
80
90°
120°
180°
70
0
20
40
60
80
100
120
thJC
110
Conduction Period
100
90
30°
80
70
120°
0
20
RMS Limit
80
60
Conduction Angle
40
IRK.105.. Series
Per Junction
T J = 130°C
20
20
40
60
80
100
120
200
160
140
120
80
Conduction Period
60
IRK.105.. Series
Per Junction
T J = 130°C
40
20
0
0
20
1100
1000
900
700
IRK.105.. Series
Per Junction
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
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60
80 100 120 140 160 180
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
1200
800
40
Average On-state Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J= 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1300
80 100 120 140 160 180
100 RMS Limit
Average On-state Current (A)
1400
60
DC
DC
180°
120°
90°
60°
30°
180
Fig. 3 - On-state Power Loss Characteristics
1500
40
180°
Fig. 2 - Current Ratings Characteristics
120
1600
60°
90°
Fig. 1 - Current Ratings Characteristics
180°
120°
90°
60°
30°
0
IRK.105.. Series
R
(DC) = 0.27 K/W
120
Average On-state Current (A)
140
0
130
Average On-state Current (A)
160
100
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27136 rev. E 10/02
1800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 130°C
No Voltage Reapplied
Rated V RRMReapplied
1600
1400
1200
1000
800
IRK.105.. Series
Per Junction
600
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
5
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
hS
R t
180°
(Sine)
180°
(Rect)
0.
1
2 x IRK.105.. Series
Single Phase Bridge
Connected
T J = 130°C
0
0
40
80
120
160
R
200
ta
el
0.
3
-D
0.
2K
/W
300
100
W
K/
400
=
500
A
Maximum Total Power Loss (W)
600
K/
W
0. 5
K/W
0.7
K/ W
1 K/ W
2 K/W
0
200
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
800
R
700
60°
(Rect)
600
SA
th
Maximum Total Power Loss (W)
900
500
0.2
400
0 .3
300
3 x IRK.105.. Series
6-Pulse Midpoint
Connection Bridge
T J = 130°C
200
100
0
=
0.
1
Io
0
0 .5
K/
W
-D
K/
W
el
ta
R
K/ W
K/ W
1 K /W
50 100 150 200 250 300 350 400 450
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
Instantaneous On-state Current (A)
1000
100
T J= 25°C
T J= 130°C
10
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
6
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IRKU/V105 Series
700
I
IRK.105.. Series
T J= 125 °C
600
TM
= 200 A
100 A
500
50 A
400
20 A
300
10 A
200
100
10
20
30
40
50
60
70
80
140
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I27136 rev. E 10/02
90 100
100 A
100
50 A
80
20 A
10 A
60
40
20
10
Rate Of Fall Of On-state Current - di/dt (A/µs)
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 11 - Recovery Current Characteristics
Fig. 10 - Recovery Charge Characteristics
Transient Thermal Impedance Z thJC (K/W)
I TM = 200 A
IRK.105.. Series
TJ = 125 °C
120
1
Steady State Value:
R thJC = 0.27 K/W
(DC Operation)
0.1
IRK.105.. Series
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
TJ = 125 °C
1
TJ = -40 °C
(b)
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.105.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 13- Gate Characteristics
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7
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
8
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