Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS(on) trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 90 A IDM TC = 25°C, Pulse Width Limited by TJM - 400 A IA EAS TC = 25°C TC = 25°C -100 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 595 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V∼ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D S G = Gate S = Source Isolated Tab D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Rectifier z Low RDS(ON) and QG z Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 200 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±15V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V - 25 μA - 300 μA RDS(on) VGS = -10V, ID = - 60A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved TJ = 125°C Applications V - 4.5 Easy to Mount Space Savings High Power Density V z z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 32 mΩ DS100403A(01/13) IXTR120P20T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 85 VDS = -10V, ID = - 60A, Note 1 145 S 73 nF Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 2550 pF 480 pF 90 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = - 60A 85 ns 200 ns 50 ns 740 nC 220 nC 120 nC RG = 1Ω (External) Qg(on) Qgs ISOPLUS247 (IXTR) Outline VGS = -10V, VDS = 0.5 • VDSS, ID = - 60A Qgd 1 = Gate 2,4 = Drain 3 = Source 0.21 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V -120 A ISM Repetitive, Pulse Width Limited by TJM - 480 A VSD IF = -100A, VGS = 0V, Note 1 -1.4 V trr QRM IRM Note IF = - 60A, -di/dt = -100A/μs 3.3 25.6 VR = -100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR120P20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -120 -300 VGS = -10V - 7V - 6V -100 VGS = -10V - 7V -250 - 6V ID - Amperes ID - Amperes -80 -60 - 5V -200 -150 -40 -100 -20 -50 - 5V - 4V 0 0 0 -0.5 -1 -1.5 -2 -2.5 0 -3 -5 -10 -20 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 60A Value vs. Junction Temperature -120 2.2 VGS = -10V - 7V - 6V -100 VGS = -10V 2.0 -80 R DS(on) - Normalized 1.8 ID - Amperes -15 VDS - Volts - 5V -60 -40 I D = -120A I D = - 60A 1.6 1.4 1.2 1.0 0.8 -20 - 4V 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 60A Value vs. Drain Current 2.2 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -100 VGS = -10V 2.0 25 TJ - Degrees Centigrade -90 -70 ID - Amperes R DS(on) - Normalized -80 TJ = 125ºC 1.8 1.6 1.4 -60 -50 -40 -30 1.2 TJ = 25ºC -20 1.0 -10 0 0.8 0 -40 -80 -120 -160 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR120P20T Fig. 8. Transconductance Fig. 7. Input Admittance -200 300 TJ = - 40ºC -180 250 -160 g f s - Siemens ID - Amperes -140 -120 -100 TJ = 125ºC 25ºC - 40ºC -80 -60 25ºC 200 125ºC 150 100 -40 50 -20 0 -3.4 0 -3.8 -4.2 -4.6 -5 -5.4 -5.8 0 -20 -40 -60 -80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -120 -140 -160 -180 -200 -220 Fig. 10. Gate Charge -300 -10 -9 -250 VDS = -100V I D = - 60A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -100 ID - Amperes -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 100 200 VSD - Volts 400 500 600 700 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 - 1000 Ciss f = 1 MHz RDS(on) Limit 100µs -100 10,000 ID - Amperes Capacitance - PicoFarads 300 QG - NanoCoulombs Coss 1ms - 10 10ms 1,000 -1 Crss TJ = 150ºC 100ms TC = 25ºC Single Pulse DC - 0.1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 - 100 VDS - Volts -1,000 IXTR120P20T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 180 180 RG = 1Ω, VGS = -10V VDS = -100V 160 140 I t r - Nanoseconds t r - Nanoseconds RG = 1Ω, VGS = -10V VDS = -100V 160 = -120A D 120 100 I = - 60A D TJ = 125ºC 140 120 100 TJ = 25ºC 80 80 60 60 25 35 45 55 65 75 85 95 105 115 125 -60 -70 -80 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 350 VDS = -100V 250 200 I D = -120A 300 150 I D = - 60A 200 100 100 50 0 2 3 4 5 6 7 8 9 240 60 220 55 200 I D = - 60A I D = - 120A 50 180 45 160 40 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 80 td(off) - - - - RG = 1Ω, VGS = -10V TJ = 125ºC 60 210 55 200 50 190 TJ = 25ºC 45 180 40 -70 -80 -90 -100 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -110 170 -120 t d(off) - Nanoseconds 220 900 TJ = 125ºC, VGS = -10V 400 800 VDS = -100V 230 65 td(off) - - - - 350 700 I D = - 120A, - 60A 300 600 250 500 200 400 150 300 100 200 50 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = -100V 70 1000 tf 450 240 t f - Nanoseconds tf 75 140 125 500 250 -60 td(off) - - - - RG = 1Ω, VGS = -10V VDS = -100V 0 1 t f - Nanoseconds 65 t d(off) - Nanoseconds 400 -120 260 tf 300 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = -10V 500 -110 70 t f - Nanoseconds tr -100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 700 600 -90 ID - Amperes IXTR120P20T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_120P20T(A9) 10-25-11