PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS ID25 RDS(on) trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 7 18 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 4 20 300 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD = 800 = 7 ≤ 1.44 ≤ 250 Maximum Ratings TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-220, TO-3P) Weight TO-220 TO-263 TO-263 (IXFA) G S (TAB) Leaded TO-263 (IXFI) G D (TAB) S TC = 25°C 200 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C V A Ω ns TO-220 (IXFP) G (TAB) D S 1.13/10 Nm/lb.in. 3 2.5 g g G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250μA 800 VGS(th) VDS = VGS, ID = 1 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) z V z TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved z 5.0 V ±100 nA 25 500 μA μA z 1.44 Ω z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Easy to mount Space savings High power density DS99597E(08/06) IXFA7N80P IXFI7N80P IXFP7N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 5 Ciss Coss 9.5 S 1890 pF 133 pF 13 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 4 A 32 ns td(off) RG = 10 Ω (External) 55 ns tf 24 ns Qg(on) 32 nC 12 nC 9 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Leaded 263 (IXFI) Outline 0.62 °C/W RthJC °C/W 0.5 RthCS Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 7 A ISM Repetitive 18 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 7A, QRM IRM -di/dt = 100 A/μs VR = 100V 250 0.3 3 TO-220 (IXFP) Outline ns μC A TO-263 (IXFA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFA7N80P IXFI7N80P IXFP7N80P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 7 16 V GS = 10V 7V 6 12 5 6V I D - Amperes I D - Amperes V GS = 10V 7V 14 4 3 6V 10 8 6 2 4 5V 1 2 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 15 18 21 24 27 30 Fig. 4. R DS(on) Normalized to ID = 3.5A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 7 3.2 V GS = 10V 6V V GS = 10V 2.8 R DS(on) - Normalized 6 5 I D - Amperes 12 V DS - Volts V DS - Volts 4 5V 3 2 2.4 2 I D = 7A 1.6 I D = 3.5A 1.2 0.8 1 0.4 0 0 2 4 6 8 10 12 14 16 18 20 22 -50 24 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade V DS - Volts Fig. 5. R DS(on) Normalized to ID = 3.5A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 8 2.8 V GS = 10V 2.6 TJ = 125ºC 7 6 2.2 I D - Amperes R DS(on) - Normalized 2.4 2 1.8 1.6 5 4 3 1.4 2 TJ = 25ºC 1.2 1 1 0.8 0 0 2 4 6 8 I D - Amperes © 2006 IXYS All rights reserved 10 12 14 16 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXFA7N80P IXFI7N80P IXFP7N80P Fig. 8. Transconductance Fig. 7. Input Admittance 8 18 7 16 14 5 g f s - Siemens 6 I D - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 4 3 2 12 25ºC 10 125ºC 8 6 4 1 2 0 0 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 0 6 1 2 3 V GS - Volts 4 5 6 7 8 9 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 10 V DS = 400V 9 14 I D = 3.5A 8 I G = 10mA 12 10 V GS - Volts I S - Amperes 7 8 TJ = 125ºC 6 TJ = 25ºC 6 5 4 3 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 5 V SD - Volts 10 15 20 25 30 35 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1.0 10,000 f = 1 MHz 1,000 R (th)JC - ºC / W Capacitance - PicoFarads C iss C oss 100 0.1 10 C rss 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.0 0.00001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10