Vishay BZD27B24P-M Zener diodes with surge current specification Datasheet

BZD27B-M Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
Available
• Sillicon planar Zener diodes
• Voltage range includes 43 breakdown
voltages from 3.6 V to 200 V with ± 2 %
for BZD27B-M Series
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
• Wave and reflow solderable
• AEC-Q101 qualified
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
• Base P/N-HM3 - halogen-free, RoHS-compliant, and
automotive grade (available on request)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
17249
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
3.6 to 200
V
Test current IZT
5 to 100
mA
V
VBR
7.35 to 196
VWM
6.2 to 160
V
PPPM
150
W
175
°C
TJ max.
VZ specification
Pulse current
Int. construction
Single
Polarity
Uni-directional
ORDERING INFORMATION
DEVICE NAME
BZD27B-M Series
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZD27B3V6P-M3-08 to BZD27B200P-M3-08
3000 per 7" reel (8mm tape)
30 000/box
BZD27B3V6P-M3-18 to BZD27B200P-M3-18
10 000 per 13" reel (8 mm tape)
50 000/box
PACKAGE
PACKAGE NAME
WEIGHT
DO-219AB (SMF)
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY WHISKER TEST
FLAMMABILITY RATING
LEVEL
ACC. JESD 201
UL 94 V-0
MSL level 1
(according J-STD-020)
Class 2
SOLDERING CONDITIONS
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power dissipation (2)
TEST CONDITION
SYMBOL
VALUE
TL = 105 °C
Ptot
2300
mW
TA = 30 °C (1)
Ptot
800
mW
100 μs square pulse
PZSM
300
W
10/1000 μs waveform
PRSM
150
W
RthJL
30
K/W
RthJA
180
K/W
Junction to lead
Junction to ambient air
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads ( 40 μm thick)
Junction temperature
UNIT
Tj
175
°C
Storage temperature range
Tstg
-65 to +175
°C
Operating temperature range
Top
-65 to +175
°C
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) T = 25 °C prior to surge
J
Rev. 1.0., 29-Oct-15
Document Number: 85922
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1
VZ at IZT1
μA

V
MAX.
%/°C
TYP.
MAX.
MIN.
MAX.
BZD27B3V6P-M
0N
3.53
3.6
3.67
100
100
1
4
8
-0.14
-0.04
BZD27B3V9P-M
1N
3.82
3.9
3.98
100
50
1
4
8
-0.14
-0.04
BZD27B4V3P-M
2N
4.21
4.3
4.39
100
25
1
4
7
-0.12
-0.02
BZD27B4V7P-M
3N
4.61
4.7
4.79
100
10
1
3
7
-0.1
0
BZD27B5V1P-M
4N
5.00
5.1
5.20
100
5
1
3
6
-0.08
0.02
BZD27B5V6P-M
5N
5.49
5.6
5.71
100
10
2
2
4
-0.04
0.04
BZD27B6V2P-M
6N
6.08
6.2
6.32
100
5
2
2
3
-0.01
0.06
BZD27B6V8P-M
7N
6.66
6.8
6.94
100
10
3
1
3
0
0.07
BZD27B7V5P-M
8N
7.35
7.5
7.65
100
50
3
1
2
0
0.07
BZD27B8V2P-M
9N
8.04
8.2
8.36
100
10
3
1
2
0.03
0.08
BZD27B9V1P-M
0O
8.92
9.1
9.28
50
10
5
2
4
0.03
0.08
BZD27B10P-M
1O
9.80
10
10.20
50
7
7.5
2
4
0.05
0.09
BZD27B11P-M
2O
10.78
11
11.22
50
4
8.2
4
7
0.05
0.1
BZD27B12P-M
3O
11.76
12
12.24
50
3
9.1
4
7
0.05
0.1
BZD27B13P-M
4O
12.74
13
13.26
50
2
10
5
10
0.05
0.1
BZD27B15P-M
5O
14.70
15
15.30
50
1
11
5
10
0.05
0.1
BZD27B16P-M
6O
15.68
16
16.32
25
1
12
6
15
0.06
0.11
BZD27B18P-M
7O
17.64
18
18.36
25
1
13
6
15
0.06
0.11
BZD27B20P-M
8O
19.60
20
20.40
25
1
15
6
15
0.06
0.11
BZD27B22P-M
9O
21.56
22
22.44
25
1
16
6
15
0.06
0.11
BZD27B24P-M
0P
23.52
24
24.48
25
1
18
7
15
0.06
0.11
BZD27B27P-M
1P
26.46
27
27.54
25
1
20
7
15
0.06
0.11
BZD27B30P-M
2P
29.40
30
30.60
25
1
22
8
15
0.06
0.11
BZD27B33P-M
3P
32.34
33
33.66
25
1
24
8
15
0.06
0.11
BZD27B36P-M
4P
35.28
36
36.72
10
1
27
21
40
0.06
0.11
BZD27B39P-M
5P
38.22
39
39.78
10
1
30
21
40
0.06
0.11
BZD27B43P-M
6P
42.14
43
43.86
10
1
33
24
45
0.07
0.12
BZD27B47P-M
7P
46.06
47
47.94
10
1
36
24
45
0.07
0.12
BZD27B51P-M
8P
49.98
51
52.02
10
1
39
25
60
0.07
0.12
BZD27B56P-M
9P
54.88
56
57.12
10
1
43
25
60
0.07
0.12
BZD27B62P-M
0Q
60.76
62
63.24
10
1
47
25
80
0.08
0.13
BZD27B68P-M
1Q
66.64
68
69.36
10
1
51
25
80
0.08
0.13
BZD27B75P-M
2Q
73.50
75
76.50
10
1
56
30
100
0.08
0.13
BZD27B82P-M
3Q
80.36
82
83.64
10
1
62
30
100
0.08
0.13
BZD27B91P-M
4Q
89.18
91
92.82
5
1
68
60
200
0.08
0.13
BZD27B100P-M
5Q
98.00
100
102.00
5
1
75
60
200
0.09
0.13
BZD27B110P-M
6Q
107.80
110
112.20
5
1
82
80
250
0.09
0.13
BZD27B120P-M
7Q
117.60
120
122.40
5
1
91
80
250
0.09
0.13
BZD27B130P-M
8Q
127.40
130
132.60
5
1
100
110
300
0.09
0.13
BZD27B150P-M
9Q
147.00
150
153.00
5
1
110
130
300
0.09
0.13
BZD27B160P-M
0R
156.80
160
163.20
5
1
120
150
350
0.09
0.13
BZD27B180P-M
1R
176.40
180
183.60
5
1
130
180
400
0.09
0.13
BZD27B200P-M
2R
196.00
200
204.00
5
1
150
200
500
0.09
0.13
Notes
• Electrical characteristics when used as regulator diodes
• Maximum VF = 1.2 V, at IF = 0.2 A
(1) Pulse test: t  5 ms
p
Rev. 1.0., 29-Oct-15
Document Number: 85922
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1
IZT1
IR at VR
VC at IRSM (1)
VZ at IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
μA
V
MAX.
V
A
MAX.
%/C
MIN.
MAX.
BZD27B7V5P-M
8N
7.35
7.5
7.65
100
1500
6.2
10.9
13.3
0
0.07
BZD27B8V2P-M
9N
8.04
8.2
8.36
100
1200
6.8
11.8
12.2
0.03
0.08
BZD27B9V1P-M
0O
8.92
9.1
9.28
50
100
7.5
12.9
11.3
0.03
0.08
BZD27B10P-M
1O
9.80
10
10.20
50
20
8.2
14.2
10.1
0.05
0.09
BZD27B11P-M
2O
10.78
11
11.22
50
5
9.1
15.2
9.6
0.05
0.1
BZD27B12P-M
3O
11.76
12
12.24
50
5
10
16
8.8
0.05
0.1
BZD27B13P-M
4O
12.74
13
13.26
50
5
11
17.8
7.9
0.05
0.1
BZD27B15P-M
5O
14.70
15
15.30
50
5
12
20.5
7.2
0.05
0.1
BZD27B16P-M
6O
15.68
16
16.32
25
5
13
21.9
6.6
0.06
0.11
BZD27B18P-M
7O
17.64
18
18.36
25
5
15
24.6
5.9
0.06
0.11
BZD27B20P-M
8O
19.60
20
20.40
25
5
16
27.3
5.3
0.06
0.11
BZD27B22P-M
9O
21.56
22
22.44
25
5
18
30
4.8
0.06
0.11
BZD27B24P-M
0P
23.52
24
24.48
25
5
20
32.3
4.4
0.06
0.11
BZD27B27P-M
1P
26.46
27
27.54
25
5
22
36.3
3.9
0.06
0.11
BZD27B30P-M
2P
29.40
30
30.60
25
5
24
40.4
3.6
0.06
0.11
BZD27B33P-M
3P
32.34
33
33.66
25
5
27
44.4
3.2
0.06
0.11
BZD27B36P-M
4P
35.28
36
36.72
10
5
30
48.4
3
0.06
0.11
BZD27B39P-M
5P
38.22
39
39.78
10
5
33
52.5
2.8
0.06
0.11
BZD27B43P-M
6P
42.14
43
43.86
10
5
36
57.9
2.5
0.07
0.12
BZD27B47P-M
7P
46.06
47
47.94
10
5
39
62.8
2.3
0.07
0.12
BZD27B51P-M
8P
49.98
51
52.02
10
5
43
68.2
2.1
0.07
0.12
BZD27B56P-M
9P
54.88
56
57.12
10
5
47
74.8
1.9
0.07
0.12
BZD27B62P-M
0Q
60.76
62
63.24
10
5
51
82.9
1.7
0.08
0.13
BZD27B68P-M
1Q
66.64
68
69.36
10
5
56
90.9
1.6
0.08
0.13
BZD27B75P-M
2Q
73.50
75
76.50
10
5
62
100.2
1.5
0.08
0.13
BZD27B82P-M
3Q
80.36
82
83.64
10
5
68
110
1.3
0.08
0.13
BZD27B91P-M
4Q
89.18
91
92.82
5
5
75
122
1.2
0.09
0.13
BZD27B100P-M
5Q
98.00
100
102.00
5
5
82
134
1.1
0.09
0.13
BZD27B110P-M
6Q
107.80
110
112.20
5
5
91
145
1
0.09
0.13
BZD27B120P-M
7Q
117.60
120
122.40
5
5
100
161
0.9
0.09
0.13
BZD27B130P-M
8Q
127.40
130
132.60
5
5
110
174
0.81
0.09
0.13
BZD27B150P-M
9Q
147.00
150
153.00
5
5
120
201
0.73
0.09
0.13
BZD27B160P-M
0R
156.80
160
163.20
5
5
130
214
0.67
0.09
0.13
BZD27B180P-M
1R
176.40
180
183.60
5
5
150
242
0.6
0.09
0.13
BZD27B200P-M
2R
196.00
200
204.00
5
5
160
268
0.54
0.09
0.13
Notes
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 1.0., 29-Oct-15
Document Number: 85922
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
IF - Forward Current (A)
IRSM
(%)
Max. VF
t1 = 10 µs
t2 = 1000 µs
100
Typ. VF
90
1
50
10
0.1
0.6
0.8
17411
1.0
1.2
1.4
17415
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
t
t1
1.6
t2
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
CD - Typ. Junction Capacitance (pF)
10 000
B5V1P
B6V8P
B18P
B12P
1000
100
B27P
B51P
B200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
VR - Reverse Voltage (V)
22806
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Ptot - Total Power Dissipation (W)
3.0
RthJL = 30K/W
2.5
2.0
1.5
RthJA = 180K/W
1.0
0.5
0
22774
0
25
50
75
100 125 150 175
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.0., 29-Oct-15
Document Number: 85922
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-219AB (SMF)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.1(0.003)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 1.0., 29-Oct-15
Document Number: 85922
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
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Vishay Semiconductors
BLISTERTAPE DIMENSIONS FOR SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.0., 29-Oct-15
Document Number: 85922
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27B-M Series
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Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 1.0., 29-Oct-15
Document Number: 85922
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
1
Document Number: 91000
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