ON NSR1030MW2T1G Schottky barrier diode Datasheet

NSR1030MW2T1G
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Schottky Barrier Diodes
This Schottky Barrier Diode in the SOD−323 package offers
extremely low Vf performance. The low forward voltage makes them
capable of handling high current in a very small package. The
resulting device is ideally suited for application as a blocking diode in
charging applications or as part of discrete buck converter or discrete
boost converter. As part of a buck conversion circuit, a boost
conversion circuit or a charging circuit the low Vf drop of the schottky
improves the efficiency of the overall device by consuming less power
in the forward mode.
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HIGH CURRENT
SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage − 0.24 V (Typ) @ IF = 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: Class 3B
1
CATHODE
2
ANODE
− Machine Model: C
• These are Pb−Free Devices
Reverse Voltage
Peak Revese Voltage
Symbol
Value
Unit
VR
30
Vdc
VRM
30
V
200
2.0
mW
mW/°C
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
Forward Current (DC)
Continuous
IF
Forward Current
t = 8.3 ms Half Sinewave
IF
Junction Temperature
TJ
125 Max
Tstg
−55 to +150
Storage Temperature Range
RF MG
G
SOD−323
CASE 477
STYLE 1
RF = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
A
1
A
ORDERING INFORMATION
5
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
Package
Shipping†
NSR1030MW2T1G SOD−323 3000/Tape & Reel
(Pb−Free)
NSR1030MW2T3G SOD−323 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. P1
Publication Order Number:
NSR1030MW2/D
M
1
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
MARKING
DIAGRAM
2
NSR1030MW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
CT
−
−
25
pF
Reverse Leakage (VR = 10 V)
IR
−
−
30
mAdc
Forward Voltage (IF = 1 mAdc)
VF
−
−
0.250
Vdc
Forward Voltage (IF = 10 mAdc)
VF
−
−
0.310
Vdc
Forward Voltage (IF = 100 mAdc)
VF
−
−
0.395
Vdc
Forward Voltage (IF = 500 mAdc)
VF
−
−
0.495
Vdc
Forward Voltage (IF = 1000 mAdc)
VF
−
−
0.595
Vdc
100000
IR, REVERSE CURRENT (mA)
150°C
10000
0.1
125°C
85°C
0.01
0.001
0.0
−45°C
25°C
0.1
0.2
0.3
0.4
0.5
125°C
1000
85°C
100
10
25°C
−55°C
1
0.6
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
100
90
CT, CAPACITANCE (pF)
IF, FORWARD CURRENT (A)
1
80
70
60
50
40
30
20
10
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2
25
30
25
30
NSR1030MW2T1G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NSR1030MW2/D
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