MOTOROLA MAC229AFP Silicon bidirectional triode thyristor Datasheet

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SEMICONDUCTOR TECHNICAL DATA
MAC229FP
Series
MAC229AFP
Series
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
• Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes
(MAC229AFP Series)
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1)
(TJ = –40 to 110°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC229-4FP, MAC229A4FP
MAC229-6FP, MAC229A6FP
MAC229-8FP, MAC229A8FP
MAC229-10FP, MAC229A10FP
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing
(t = 8.3 ms)
p 2 µs)
Peak Gate Voltage (t p 2 µs)
Peak Gate Power (t p 2 µs)
Peak Gate Current (t
Average Gate Power
(TC = 80°C, t
8.3 ms)
p
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Symbol
Value
VDRM
Unit
Volts
200
400
600
800
IT(RMS)
8
Amps
ITSM
80
Amps
I2t
26
A2s
IGM
±2
Amps
VGM
±10
Volts
PGM
20
Watts
PG(AV)
0.5
Watts
TJ
–40 to 110
°C
Tstg
–40 to 150
°C
8
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
2.2
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Peak Blocking Current(1)
(VD = Rated VDRM, Open Gate)
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width
Symbol
Min
Typ
Max
Unit
—
—
—
—
10
2
µA
mA
—
—
1.8
Volts
IDRM
TJ = 25°C
TJ = 110°C
VTM
p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
IGT
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
(VD = Rated VDRM, TC = 110°C, RL = 10 k)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A” Suffix Only
VGT
mA
—
—
—
—
5
10
Volts
—
—
—
—
2
2.5
0.2
0.2
—
—
—
—
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
IH
—
—
15
mA
Gate-Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
tgt
—
1.5
—
µs
dv/dt
—
25
—
V/µs
dv/dt(c)
—
5
—
V/µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
10
α = 30°
104
60°
90°
120°
120°
180°
98
α
92
α
86
α = CONDUCTION ANGLE
dc
dc
α = 180°
α
8.0
120°
α
6.0
90°
α = CONDUCTION ANGLE
TJ ≈ 110°C
4.0
60°
30°
2.0
0
80
0
1.0
2.0
3.0
4.0
5.0
6.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
2
P(AV) , AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE ( °C)
110
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
–B–
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
SEATING
PLANE
C
S
P
N
E
A
Q
H
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
1 2 3
–Y–
K
Z
J
L
G
R
D
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
CASE 221C–02
Motorola Thyristor Device Data
3
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Motorola Thyristor Device Data
*MAC229FP/D*
MAC229FP/D
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