Preliminary GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a themally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Features • GaN on SiC HEMT technology • Input matched • Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs - Output power at P3dB = 200 W - Efficiency = 60% - Gain = 12.5 dB • Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power • RoHS-compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Doherty test fixture) VDD = 48 V, IDQ = 110 mA, POUT = 29 W avg, VGS(PEAK) = –5.5 V, ƒ1 = 3600 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps — 13.5 — dB Drain Efficiency hD — 46 — % Adjacent Channel Power Ratio ACPR — –28 — dBc Output PAR @ 0.01% CCDF OPAR — –7.9 — dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 03, 2018-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Preliminary GTRA362002FC 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 2 mA Gate Threshold Voltage VDS = 10 V, ID = 10 mA VGS(th) –3.8 –3.0 –2.3 V Symbol Min Typ Max Unit VDD 0 — 50 V VGS(Q) — –2.8 — V Recommended Operating Conditions Parameter Conditions Drain Operating Voltage VDS = 48 V, ID = 0.11 A Gate Quiescent Voltage Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 11 mA Drain Current ID 4.6 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Chracteristics Parameter Thermal Resistance, Junction to Case Symbol Value Unit RqJC TBD °C/W Ordering Information Type and Version Order Code Package Shipping GTRA362002FC V1 R0 TBD H-37248C-4, earless flange Tape & Reel, 50 pcs GTRA362002FC V1 R2 TBD H-37248C-4, earless flange Tape & Reel, 250 pcs Rev. 03, 2018-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 Preliminary GTRA362002FC Pinout Diagram (top view) S D1 D2 G1 G2 Pin D1 D2 G1 G2 S Description Drain Device 1 Drain Device 2 Gate Device 1 Gate Device 2 Source (flange) H-37248-4_pd_10-10-2012 See next page for Package Outline Specifications Rev. 03, 2018-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Preliminary GTRA362002FC 4 Package Outline Specifications Package H-37248C-4 (8.89 [.350]) 45° X 2.72 [.107] 4.83±0.51 [.190±0.020] (5.08 [.200]) CL D1 D2 9.78 [.385] CL G1 (19.43 [.765]) G2 R0.51 +0.38 –0.13 R.020 +.015 –.005 3.81 [.150] 12.70 [.500] 3.78±0.25 [.149±0.010] 19.81±0.20 [.780±0.008] 1.02 [.040] C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 SPH 1.57 [.062] S CL 20.57 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 5. Lead thickness: 0.13 ± 0.05 [0.005 ± 0.002] 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Rev. 03, 2018-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 Preliminary GTRA362002FC Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-07-14 Advance All Data Sheet reflects advance specification for product development 02 2017-07-21 Advance All Revised Features and Target RF Characteristics Includes Package 03 2018-04-03 Preliminary All Data Sheet reflects preliminary specification For more information, please contact: Jeff Martin RF Sales 1.919.407.5983 Daniel Rodriguez Marketing 1.408.776.0600 Or email: [email protected] Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 03, 2018-04-03 www.wolfspeed.com