DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(on) max -30V 25mΩ @ VGS = -10V 38mΩ @ VGS = -4.5V ID TA = +25°C -6.8A -5.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Load Switch Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 6 D D 1 5 D D 2 4 S S G G 3 S Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP3028LFDE-7 DMP3028LFDE-13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information PX Date Code Key Year Code Month Code 2011 Y Jan 1 YM ADVANCE INFORMATION Product Summary 2012 Z Feb 2 DMP3028LFDE Document number: DS35965 Rev. 7 - 2 Mar 3 PX = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D October 2014 © Diodes Incorporated DMP3028LFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value -30 ±20 -6.8 -5.3 ID A -8.2 -6.6 -2.5 -40 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics PD RJA PD RJA RJC TJ, TSTG Value 0.66 0.42 189 125 2.03 1.3 61 41 9.3 -55 to +150 Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) ID(ON) 20 29 4.5 0.7 — -2.4 25 38 1.2 — V Static Drain-Source On-Resistance -1.2 -20 VDS = VGS, ID = -250µA VGS = -10V, ID = -7A VGS = -4.5V, ID = -6.2A VDS = -5V, ID = -7A VGS = 0V, IS = -2.1A VDS ≦-5V, VGS = -4.5V Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf 1241 147 110 15 22 10.9 3.5 4.7 9.7 17.1 60.5 40.4 1860 220 165 30 33 17 6 8 15 26 91 61 Forward Transfer Admittance Diode Forward Voltage On State Drain Current (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD mΩ S V A Test Condition pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -7A nS VGS = -10V, VDD = -15V, RGEN = 6Ω, ID = -7A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP3028LFDE Document number: DS35965 Rev. 7 - 2 2 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP3028LFDE 20 20 VGS = -10V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 15 VGS = -5.0V VGS = -4.5V VGS = -4.0V 10 VGS = -3.5V VGS = -3.0V 5 15 10 5 TA = 150C TA = 125C VGS = -2.5V 0 1 2 3 4 -V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 TA = 85C TA = 25 C TA = -55 C 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.30 ID = -7.0A 0.25 ID = -6.2A 0.20 0.15 0.10 0.05 0 0 30 5 10 15 20 -V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.8 0.05 VGS = -4.5V 0.04 TA = 150C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VDS = -5.0V TA = 125C TA = 85C 0.03 TA = 25C 0.02 TA = -55C 0.01 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3028LFDE Document number: DS35965 Rev. 7 - 2 20 3 of 6 www.diodes.com 1.6 VGS = -10V ID = -10A 1.4 VGS = -5.0V ID = -5.0A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature October 2014 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 3.0 0.05 0.04 VGS = -5.0V ID = -5.0A 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2.5 2.0 -ID = 1mA 1.5 -ID = 250µA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 20 -IS, SOURCE CURRENT (A) 15 10 TA= 150C TA= 125C TA= 85C 5 TA= 25C TA= -55C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION DMP3028LFDE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 165°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMP3028LFDE Document number: DS35965 Rev. 7 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 10 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 October 2014 © Diodes Incorporated DMP3028LFDE Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 K2 0.225 Z 0.20 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) DMP3028LFDE Document number: DS35965 Rev. 7 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 5 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP3028LFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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