Advance Technical Information Standard Power MOSFET VDSS = 200 V ID (cont) = 48 A Ω RDS(on) = 50 mΩ IXTH 48N20 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 48 A IDM TC = 25°C, pulse width limited by TJM 192 A 48 A 30 1.0 mJ J 5 V/ns 275 W -55 ... +150 °C IAR EAR EAS TC TC = 25°C = 25°C dv/dt IS TJ ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved g D (TAB) G = Gate, S = Source, V 4.0 V ±100 nA 25 250 µA µA 50 m Ω D = Drain, TAB = Drain Features z z z z z VDSS RDS(on) 6 TO-247 AD International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Applications z z z z Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages z z z Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density DS99021A(04/03) IXTH 48N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 , pulse test Ciss Coss 24 32 S 3000 pF 550 pF 180 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 19 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 19 ns td(off) RG = 3.6 Ω (External) 79 ns 17 ns 110 nC 20 nC 55 nC tf QG(on) QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 QGD RthJC 0.45 RthCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr Qrr IF = 25 A, -di/dt = 100 A/µs, VR = 100 V 250 3.0 48 A 192 A 1.5 V TO-247 AD Outline 1 2 Terminals: 1 - Gate 3 - Source Dim. 3 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343