PHILIPS BYC10X-600P Hyperfast power diode Datasheet

TO
-22
0F
BYC10X-600P
Hyperfast power diode
9 May 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
Active PFC in air conditioner
High frequency switched-mode power supplies
Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
-
-
600
V
-
-
10
A
IF = 10 A; Tj = 150 °C; Fig. 6
-
1.3
2
V
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
-
12
18
ns
δ = 0.5; Th ≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
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BYC10X-600P
NXP Semiconductors
Hyperfast power diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
Simplified outline
cathode
Graphic symbol
mb
K
A
001aaa020
2
A
anode
mb
n.c.
mounting base; isolated
1
2
TO-220F (SOD113A)
6. Ordering information
Table 3.
Ordering information
Type number
Package
BYC10X-600P
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220F "full pack"
SOD113A
7. Marking
Table 4.
Marking codes
Type number
Marking code
BYC10X-600P
BYC10X-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
DC
-
600
V
IF(AV)
average forward current
δ = 0.5; Th ≤ 61 °C; square-wave pulse;
-
10
A
-
20
A
Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward current
δ = 0.5; tp = 25 µs; Th ≤ 61 °C; squarewave pulse
BYC10X-600P
Product data sheet
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BYC10X-600P
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Hyperfast power diode
Symbol
Parameter
Conditions
Min
Max
Unit
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
-
150
A
-
165
A
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Tstg
storage temperature
-65
175
°C
Tj
junction temperature
-
175
°C
aaa-010181
35
Ptot
(W)
30
aaa-010182
25
Ptot
(W)
δ=1
a = 1.57
1.9
20
2.2
0.5
25
2.8
20
15
0.2
4.0
0.1
15
10
10
5
5
0
Fig. 1.
0
5
10
IF(AV) (A)
0
15
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
aaa-010187
15
2.5
5
7.5
IF(AV) (A)
10
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
aaa-010184
104
IFSM
(A)
IF(AV)
(A)
61 °C
10
103
5
102
0
-50
Fig. 3.
0
0
50
100
BYC10X-600P
Product data sheet
10
10-5
150
200
Th (°C)
Forward current as a function of heatsink
temperature; maximum values
IF
Fig. 4.
t
tp
Tj(init) = 25 °C max
10-4
10-3
tp (s)
10-2
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
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IFSM
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BYC10X-600P
NXP Semiconductors
Hyperfast power diode
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 5
-
-
4.8
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
55
-
K/W
aaa-010188
10
Zth(j-h)
(K/W)
1
10-1
δ = 0.5
δ = 0.3
δ = 0.1
10-2
δ = 0.05
P
δ = 0.02
δ = 0.01
10-3
δ=
single pulse
tp
10-4
10-6
Fig. 5.
10-5
10-4
10-3
10-2
10-1
tp
T
t
T
1
10
tp (s)
Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
-
-
2500
V
Cisol
isolation capacitance
f = 1 MHz; from cathode to external
heatsink
-
10
-
pF
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 25 °C; Fig. 6
-
2.5
3.2
V
11. Characteristics
Table 8.
Characteristics
Symbol
Parameter
Static characteristics
VF
forward voltage
BYC10X-600P
Product data sheet
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BYC10X-600P
NXP Semiconductors
Hyperfast power diode
Symbol
Parameter
IR
reverse current
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 150 °C; Fig. 6
-
1.3
2
V
VR = 600 V; Tj = 25 °C
-
-
10
µA
VR = 600 V; Tj = 150 °C
-
-
0.8
mA
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
-
26
-
nC
-
83
-
nC
-
12
18
ns
-
19
-
ns
-
26
-
ns
-
34
-
ns
-
2
-
A
-
4.8
-
A
Dynamic characteristics
Qr
recovered charge
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
reverse recovery time
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IRM
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
peak reverse recovery
current
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
aaa-010185
20
IF
IF
(A)
dlF
dt
15
trr
10
(1)
(2)
time
(3)
25 %
Qr
5
IR
0
Fig. 6.
100 %
IRM
003aac562
0
1
2
3
VF (V)
4
Fig. 7.
Reverse recovery definitions; ramp recovery
Forward current as a function of forward
voltage
BYC10X-600P
Product data sheet
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BYC10X-600P
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Hyperfast power diode
12. Package outline
Plastic single-ended package; isolated heasink mounted;
1 mounting hole; 2-lead TO-220F 'full pack'
SOD113A
A
A1
E
z(2)
P
q
m
T(4)
D
HE
j(3)
L1(1)
k(3)
Q
L
1
b1
2
c
w
b
e
0
5
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min
mm
A
A1
b
b1
c
D
E
e
4.6
3.1
0.9
1.1
0.7
15.8 10.3
4.0
2.5
0.7
0.9
0.4
15.2
9.7
HE
max
5.08 19.0
j(3)
k(3)
L
L1(1)
m
P
Q
2.7
0.8
14.4
3.3
6.5
3.2
2.8
1.7
0.4
13.5
2.8
6.3
3.0
2.3
q
T(4)
W
z(2)
2.6
2.55
0.4
0.8
Note
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Outline
version
SOD113A
Fig. 8.
sod113a_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
14-01-14
14-04-10
2 LEADS TO220F
Package outline TO-220F (SOD113A)
BYC10X-600P
Product data sheet
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BYC10X-600P
NXP Semiconductors
Hyperfast power diode
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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Please consult the most recently issued document before initiating or
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BYC10X-600P
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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representation or warranty that such applications will be suitable for the
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in the customer’s applications or products, or the application or use by
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Semiconductors N.V.
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Corporation.
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14. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Isolation characteristics ........................................4
11
Characteristics ....................................................... 4
12
Package outline ..................................................... 6
13
13.1
13.2
13.3
13.4
Legal information ...................................................7
Data sheet status ................................................. 7
Definitions .............................................................7
Disclaimers ...........................................................7
Trademarks .......................................................... 8
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 May 2014
BYC10X-600P
Product data sheet
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9 May 2014
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