CREE CG2H40010P 10 w, dc - 6 ghz, rf power gan hemt Datasheet

CG2H40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail,
offers a general purpose, broadband solution to a variety of RF and microwave
applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth
capabilities making the CG2H40010 ideal for linear and compressed amplifier
circuits. The transistor is available in both screw-down, flange and solder-
Package Type
s: 440196, & 44
0166
PN’s: CG2H40
010P & CG2H
40010F
down, pill packages.
FEATURES
APPLICATIONS
•
Up to 8 GHz Operation
•
2-Way Private Radio
•
18 dB Small Signal Gain at 2.0 GHz
•
Broadband Amplifiers
•
16 dB Small Signal Gain at 4.0 GHz
•
Cellular Infrastructure
•
17 W typical PSAT
•
Test Instrumentation
•
70 % Efficiency at PSAT
•
Class A, AB, Linear amplifiers suitable for
•
28 V Operation
18
Rev 1.1 – May 20
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
120
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
˚C
TSTG
-65, +150
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.0
mA
25˚C
Maximum Drain Current
IDMAX
1.5
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
60
in-oz
RθJC
7.83
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3,4
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CG2H40010F at PDISS = 14 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-3.0
-2.4
VDC
VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 200 mA
Saturated Drain Current
IDS
2.59
3.5
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 3.6 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
2
Small Signal Gain
GSS
15.0
16.7
–
dB
VDD = 28 V, IDQ = 200 mA
Power Output3
PSAT
11.0
16.5
–
W
VDD = 28 V, IDQ = 200 mA
η
60
70
–
%
VDD = 28 V, IDQ = 200 mA, PSAT
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 200 mA,
POUT = 10 W CW
Input Capacitance
CGS
–
4.19
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
1.84
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.186
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
Output Mismatch Stress
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CG2H40010-AMP.
3
PSAT is defined as IG = 0.36 mA.
4
Drain Efficiency = POUT / PDC
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
20
Figure 1. - Small Signal Gain and Return Loss vs Frequency
of the CG2H40010 in the CG2H40010-AMP
Small Signal Gain and Return Loss vs. Frequency
VDD = 28 V, IDQ = 100 mA
of the CG2H40010 in the CG2H40010-AMP
15
Gain and Return Loss (dB)
10
5
0
-5
-10
S11
S21
-15
S22
-20
2.50
2.75
3.00
3.25
3.50
Frequency (GHz)
3.75
4.00
4.25
4.50
Figure 2. - PSAT, Gain, and Drain Efficiency vs Frequency of the
PSAT,
Gain, and Drain
Efficiency
vs Frequency of the
CG2H40010F
in the
CG2H40010-AMP
CG2H40010
CG2H40010-AMP
VDD = 28 V, Iin
=
100
mA
DQ
Vdd = 28V, Idq = 100mA
26
80
24
70
Efficiency
60
Psat
Gain
Drain Eff
20
18
40
16
30
PSAT
14
20
12
10
3.30
10
Gain
3.40
3.50
3.60
3.70
Frequency (GHz)
3.80
3.90
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
50
CG2H40010 Rev 1.1
Drain Efficiency (%)
Psat (W), Gain (dB)
22
4.00
0
4.10
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 3. - Swept CW Data of CG2H40010F vs. Output Power
Swept
CW Data
of CGH40010F vs. Output
Measured
in CG2H40010-AMP
at 3.7Power
GHz
Meassured
VDD = 28inV,CG2H40010-AMP
IDQ = 100 mA
3.7 GHz, Vdd = 28V, Idq = 100mA
17
80
70
Gain
Gain (dB)
15
60
Drain Eff
14
50
13
40
12
30
11
20
10
31
32
33
34
35
36
37
Pout (dBm)
38
39
40
41
42
43
Drain Efficiency (%)
16
10
Figure 4. - Simulated Maximum Available Gain and K Factor of CG2H40010F
VDD = 28 V,
IDQ and
= 100
mA of the CG2H40010F
Simulated Maximum Available
Gain
K Factor
Vdd = 28V, Idq = 100mA
35
2.0
1.6
25
1.2
20
0.8
15
0.4
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
4.0
4.5
5.0
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
K
K Factor
MAG (dB)
Gmax
30
CG2H40010 Rev 1.1
5.5
6.0
0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Noise Performance
Figure 5. - Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40010F
Simulated Minimum NoiseVFigure
Noise
Resistance
of the CG2H40010F
= 28and
V, IDQ
= 100
mA
DD
Vdd = 28V, Idq = 100mA
2.0
NF
36
RN
1.6
32
1.4
28
1.2
24
1.0
20
0.8
16
0.6
12
0.4
8
0.2
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
4.0
4.5
5.0
5.5
6.0
Noise Resistance (Ohms)
1.8
Minimum Noise Figure (dB)
40
0
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
0.50
55.3 + j27.6
40.9 + j2.34
1.00
30.9 + j17.8
26 + j7.7
1.50
20.4 + j5.17
27 + j6.5
2.00
16.7 + j0.60
18.3 + j5.94
2.50
9.7 - j4.6
11.5 + j10.9
3.00
6.6 - j7.75
20.6 + j8.75
3.50
5.1 - j11.5
15.2 + j3.43
4.00
6.21 - j14.1
11.6 - j4.77
4.50
4.89 - j19.8
8.58 - j5.11
5.00
5.22 - j25.9
10.8 - j6.23
5.50
5.77 - j30.8
9.06 - j13.3
6.00
8.04 - j37.2
10.2 - j15.3
Note 1. VDD = 28V, IDQ = 100mA in the 440166 package.
Note 2. Optimized for power, gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplifier stability.
CG2H40010 Power Dissipation De-rating Curve
CGH40010F CW Power Dissipation De-rating Curve
16
14
Power Dissipation (W)
12
10
8
Note 1
6
4
2
0
25
50
75
100
125
150
175
200
225
Note 1. Area 0exceeds
Maximum
Case
Operating
Temperature
(See250
Page 2).
Maximum Case Temperature (°C)
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CG2H40010-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1,R2
RES,1/16W,0603,1%,0 OHMS
1
R3
RES,1/16W,0603,1%,47 OHMS
1
R4
RES,1/16W,0603,1%,100 OHMS
1
C6
CAP, 470PF, 5%,100V, 0603
1
C17
CAP, 33 UF, 20%, G CASE
1
C16
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C8
CAP 10UF 16V TANTALUM
1
C14
CAP, 100.0pF, +/-5%, 0603
1
C1
CAP, 0.5pF, +/-0.05pF, 0603
1
C2
CAP, 0.7pF, +/-0.1pF, 0603
1
C10,C11
CAP, 1.0pF, +/-0.1pF, 0603
2
C4,C12
CAP, 10.0pF,+/-5%, 0603
2
C5,C13
CAP, 39pF, +/-5%, 0603
2
C7,C15
CAP,33000PF, 0805,100V, X7R
2
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
PCB, RO4350B, Er = 3.48, h = 20 mil
1
CG2H40010F or CG2H40010P
1
J3,J4
Q1
CG2H40010-AMP Demonstration Amplifier Circuit
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CG2H40010-AMP Demonstration Amplifier Circuit Schematic
CG2H40010-AMP Demonstration Amplifier Circuit Outline
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CG2H40010
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.50
0.872
-116.75
21.365
110.57
0.0279
24.89
0.417
-103.52
0.60
0.860
-126.97
18.584
103.99
0.0290
19.19
0.407
-112.55
0.70
0.851
-135.13
16.376
98.45
0.0298
14.53
0.401
-119.61
0.80
0.845
-141.80
14.600
93.64
0.0302
10.60
0.398
-125.24
0.90
0.841
-147.38
13.151
89.35
0.0306
7.22
0.397
-129.81
1.00
0.837
-152.15
11.950
85.47
0.0307
4.24
0.398
-133.60
1.10
0.835
-156.31
10.942
81.88
0.0308
1.56
0.399
-136.79
1.20
0.833
-159.98
10.086
78.52
0.0309
-0.87
0.402
-139.53
1.30
0.831
-163.28
9.350
75.34
0.0309
-3.10
0.405
-141.92
1.40
0.830
-166.28
8.712
72.32
0.0308
-5.17
0.409
-144.05
1.50
0.829
-169.04
8.155
69.41
0.0307
-7.11
0.413
-145.96
1.60
0.829
-171.60
7.663
66.61
0.0306
-8.93
0.417
-147.72
1.70
0.828
-174.01
7.227
63.89
0.0305
-10.65
0.422
-149.34
1.80
0.828
-176.27
6.838
61.24
0.0304
-12.28
0.427
-150.87
1.90
0.827
-178.43
6.488
58.65
0.0302
-13.82
0.432
-152.32
2.00
0.827
179.50
6.173
56.11
0.0300
-15.29
0.437
-153.71
2.10
0.827
177.51
5.888
53.62
0.0299
-16.70
0.442
-155.05
2.20
0.826
175.58
5.628
51.17
0.0297
-18.03
0.447
-156.36
2.30
0.826
173.70
5.391
48.76
0.0295
-19.31
0.453
-157.64
2.40
0.826
171.87
5.174
46.38
0.0293
-20.52
0.458
-158.90
2.50
0.825
170.07
4.975
44.02
0.0291
-21.68
0.463
-160.15
2.60
0.825
168.30
4.791
41.69
0.0288
-22.78
0.468
-161.38
2.70
0.825
166.56
4.622
39.37
0.0286
-23.83
0.473
-162.61
2.80
0.824
164.83
4.465
37.08
0.0284
-24.82
0.478
-163.84
2.90
0.824
163.12
4.320
34.80
0.0282
-25.76
0.483
-165.07
3.00
0.824
161.41
4.185
32.54
0.0280
-26.64
0.488
-166.31
3.20
0.823
158.01
3.941
28.06
0.0276
-28.24
0.496
-168.79
3.40
0.821
154.60
3.730
23.61
0.0272
-29.61
0.505
-171.31
3.60
0.820
151.17
3.545
19.19
0.0268
-30.76
0.512
-173.86
3.80
0.818
147.68
3.382
14.76
0.0265
-31.70
0.519
-176.46
4.00
0.816
144.13
3.239
10.34
0.0262
-32.41
0.525
-179.10
4.20
0.814
140.49
3.113
5.89
0.0260
-32.91
0.531
178.20
4.40
0.811
136.74
3.002
1.42
0.0259
-33.20
0.535
175.44
4.60
0.809
132.85
2.905
-3.10
0.0259
-33.31
0.539
172.61
4.80
0.806
128.81
2.821
-7.68
0.0261
-33.28
0.542
169.69
5.00
0.802
124.60
2.746
-12.33
0.0264
-33.14
0.544
166.67
5.20
0.799
120.21
2.680
-17.05
0.0269
-32.94
0.545
163.54
5.40
0.795
115.62
2.622
-21.86
0.0276
-32.76
0.545
160.28
5.60
0.791
110.82
2.569
-26.77
0.0286
-32.65
0.544
156.88
5.80
0.787
105.80
2.522
-31.78
0.0297
-32.69
0.542
153.33
6.00
0.783
100.56
2.479
-36.91
0.0311
-32.95
0.540
149.60
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CG2H40010
(Small Signal, VDS = 28 V, IDQ = 200 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.50
0.874
-125.62
23.065
107.16
0.0231
22.83
0.390
-121.46
0.60
0.865
-135.15
19.881
101.04
0.0238
17.87
0.389
-129.56
0.70
0.858
-142.64
17.413
95.93
0.0243
13.91
0.390
-135.68
0.80
0.853
-148.74
15.461
91.50
0.0246
10.65
0.391
-140.43
0.90
0.850
-153.82
13.887
87.55
0.0248
7.88
0.393
-144.22
1.00
0.848
-158.16
12.595
83.95
0.0249
5.47
0.395
-147.32
1.10
0.846
-161.95
11.518
80.62
0.0250
3.34
0.397
-149.92
1.20
0.844
-165.32
10.608
77.50
0.0250
1.43
0.400
-152.13
1.30
0.843
-168.35
9.830
74.53
0.0251
-0.30
0.403
-154.05
1.40
0.842
-171.12
9.158
71.70
0.0250
-1.89
0.406
-155.75
1.50
0.841
-173.68
8.572
68.96
0.0250
-3.36
0.410
-157.29
1.60
0.840
-176.06
8.057
66.32
0.0250
-4.72
0.413
-158.68
1.70
0.839
-178.31
7.600
63.74
0.0249
-5.99
0.417
-159.98
1.80
0.839
179.55
7.194
61.23
0.0249
-7.17
0.420
-161.20
1.90
0.838
177.51
6.830
58.76
0.0248
-8.29
0.424
-162.36
2.00
0.838
175.55
6.502
56.34
0.0247
-9.33
0.428
-163.47
2.10
0.837
173.65
6.206
53.96
0.0247
-10.31
0.432
-164.54
2.20
0.836
171.80
5.936
51.60
0.0246
-11.23
0.436
-165.60
2.30
0.836
170.00
5.690
49.28
0.0245
-12.10
0.440
-166.63
2.40
0.835
168.24
5.466
46.98
0.0244
-12.91
0.444
-167.65
2.50
0.835
166.50
5.259
44.70
0.0244
-13.66
0.447
-168.67
2.60
0.834
164.79
5.070
42.43
0.0243
-14.37
0.451
-169.68
2.70
0.833
163.09
4.894
40.19
0.0242
-15.02
0.455
-170.70
2.80
0.832
161.41
4.732
37.95
0.0242
-15.63
0.459
-171.72
2.90
0.832
159.73
4.582
35.73
0.0241
-16.19
0.462
-172.74
3.00
0.831
158.06
4.443
33.52
0.0241
-16.70
0.466
-173.78
3.20
0.829
154.72
4.192
29.12
0.0241
-17.58
0.472
-175.88
3.40
0.827
151.37
3.974
24.74
0.0241
-18.30
0.478
-178.04
3.60
0.825
147.98
3.783
20.37
0.0241
-18.86
0.484
179.75
3.80
0.822
144.53
3.615
15.99
0.0243
-19.28
0.489
177.48
4.00
0.820
141.00
3.467
11.59
0.0245
-19.59
0.493
175.13
4.20
0.817
137.38
3.337
7.16
0.0248
-19.82
0.497
172.72
4.40
0.813
133.65
3.223
2.69
0.0253
-20.00
0.500
170.22
4.60
0.810
129.77
3.122
-1.84
0.0259
-20.17
0.502
167.64
4.80
0.806
125.74
3.034
-6.43
0.0267
-20.38
0.504
164.95
5.00
0.802
121.53
2.956
-11.09
0.0276
-20.67
0.504
162.15
5.20
0.798
117.14
2.887
-15.84
0.0287
-21.10
0.504
159.21
5.40
0.794
112.55
2.825
-20.68
0.0300
-21.69
0.503
156.13
5.60
0.789
107.75
2.770
-25.62
0.0315
-22.49
0.502
152.90
5.80
0.785
102.74
2.719
-30.66
0.0331
-23.54
0.499
149.49
6.00
0.780
97.50
2.672
-35.82
0.0350
-24.86
0.496
145.89
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CG2H40010
(Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.50
0.884
-133.72
22.181
103.56
0.0199
20.32
0.356
-129.90
0.60
0.878
-142.44
18.972
97.82
0.0203
15.95
0.358
-136.80
0.70
0.873
-149.25
16.532
93.01
0.0206
12.53
0.360
-141.87
0.80
0.870
-154.75
14.626
88.83
0.0208
9.75
0.363
-145.73
0.90
0.868
-159.35
13.103
85.08
0.0209
7.42
0.366
-148.77
1.00
0.866
-163.28
11.861
81.66
0.0210
5.42
0.369
-151.23
1.10
0.865
-166.73
10.830
78.47
0.0210
3.68
0.373
-153.26
1.20
0.864
-169.80
9.963
75.46
0.0210
2.13
0.376
-154.99
1.30
0.863
-172.59
9.223
72.59
0.0210
0.75
0.380
-156.50
1.40
0.862
-175.15
8.585
69.83
0.0210
-0.50
0.384
-157.83
1.50
0.861
-177.52
8.030
67.17
0.0210
-1.64
0.388
-159.04
1.60
0.861
-179.75
7.543
64.58
0.0209
-2.67
0.393
-160.15
1.70
0.860
178.13
7.112
62.05
0.0209
-3.61
0.397
-161.19
1.80
0.860
176.12
6.729
59.58
0.0208
-4.47
0.402
-162.19
1.90
0.859
174.18
6.386
57.15
0.0208
-5.25
0.406
-163.15
2.00
0.859
172.31
6.077
54.76
0.0207
-5.97
0.411
-164.08
2.10
0.858
170.49
5.797
52.40
0.0207
-6.61
0.415
-165.00
2.20
0.857
168.71
5.544
50.07
0.0207
-7.20
0.420
-165.92
2.30
0.857
166.97
5.313
47.76
0.0206
-7.72
0.424
-166.83
2.40
0.856
165.25
5.101
45.48
0.0206
-8.19
0.429
-167.74
2.50
0.856
163.56
4.907
43.21
0.0206
-8.60
0.433
-168.66
2.60
0.855
161.89
4.729
40.96
0.0205
-8.95
0.438
-169.59
2.70
0.854
160.23
4.564
38.72
0.0205
-9.26
0.442
-170.53
2.80
0.853
158.57
4.412
36.50
0.0205
-9.51
0.446
-171.48
2.90
0.853
156.92
4.271
34.28
0.0205
-9.71
0.451
-172.45
3.00
0.852
155.27
4.140
32.08
0.0206
-9.87
0.455
-173.43
3.20
0.850
151.96
3.904
27.68
0.0207
-10.05
0.462
-175.45
3.40
0.848
148.62
3.699
23.31
0.0209
-10.08
0.469
-177.54
3.60
0.846
145.23
3.520
18.93
0.0212
-10.00
0.476
-179.70
3.80
0.843
141.78
3.362
14.55
0.0215
-9.85
0.482
178.06
4.00
0.840
138.24
3.223
10.14
0.0220
-9.66
0.487
175.75
4.20
0.837
134.60
3.101
5.70
0.0227
-9.48
0.492
173.36
4.40
0.834
130.83
2.994
1.21
0.0235
-9.38
0.495
170.88
4.60
0.831
126.92
2.899
-3.33
0.0244
-9.39
0.498
168.30
4.80
0.827
122.84
2.816
-7.93
0.0256
-9.56
0.500
165.62
5.00
0.823
118.59
2.743
-12.62
0.0269
-9.95
0.502
162.83
5.20
0.819
114.14
2.678
-17.39
0.0284
-10.59
0.502
159.90
5.40
0.815
109.50
2.619
-22.25
0.0301
-11.49
0.502
156.82
5.60
0.811
104.65
2.566
-27.21
0.0320
-12.69
0.501
153.59
5.80
0.807
99.58
2.518
-32.28
0.0341
-14.20
0.499
150.18
6.00
0.802
94.29
2.473
-37.47
0.0364
-16.03
0.496
146.59
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CG2H40010F (Package Type —
­ 440166)
Product Dimensions CG2H40010P (Package Type —
­ 440196)
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CG2H40010F
GaN HEMT
Each
CG2H40010P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CG2H40010F-TB
CG2H40010F-AMP
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CG2H40010 Rev 1.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
14
CG2H40010 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf