MMD IM801B Mems oscillator, low power, lvcmos/hcmos compatible, 1.000 mhz to 110.000 mhz Datasheet

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Features:
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IM801 Series
Typical Applications:
MEMS Technology
Direct pin to pin drop-in replacement for industry-standard packages
LVCMOS/HCMOS Compatible Output
Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm
Pb-free, Halogen-free, Antimony-free
RoHS and REACH compliant
Fast delivery times
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Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Electrical Specifications:
Frequency Range
1.000 MHz to 110.000MHz
Frequency Stability
See Part Number Guide
Operating Temperature
Supply Voltage (Vdd) 10%
See Part Number Guide
See Part Number Guide
3.8 mA typ./ 4.5 mA max
3.7 mA typ./ 4.2 mA max
3.5 mA typ./ 4.1 mA max
4.2 mA max
4.0 mA max
2.1 µA typ./ 4.3 µA max
1.1 µA typ. / 2.5 µA max
0.2 µA typ. / 1.3 µA max
Current Consumption
OE Disable Current
Standby Current
Waveform Output
Symmetry
Rise / Fall Time
Logic “1”
Logic “0”
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Startup Time
Enable/Disable time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
LVCMOS / HCMOS
45%/55%
1.0 nSec typ./ 2.0 nSec max
1.3 nSec typ./ 2.5 nSec max
90% of Vdd min
10% of Vdd max
70% of Vdd min
30% of Vdd max
50kΩ min / 87kΩ typ. 150kΩ max
2.0MΩ min
5.0 mSec max
130 nSec max
5.0 mSec max
1.8pSec typ./ 3.0pSec max
1.8pSec typ./ 3.0pSec max.
12.0 pSec typ./ 25.0 pSec max
14.0 pSec typ./ 30.0 pSec max
0.5pSec typ./ 0.9 pSec max
1.3pSec typ./ 2.0pSec max
Inclusive of Initial Tolerance, Operating Temperature Range, Load,
Voltage, and Aging
No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V
No load condition, F = 20 MHz, Vdd = +2.5 V
No load condition, F = 20 MHz, Vdd = +1.8 V
Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state
Vdd = +1.8 V, OE = GND, Output in high-Z state
ST = GND, Vdd = +2.8 V to +3.3V
ST = GND, Vdd = +2.5 V
ST = GND, Vdd = +1.8 V
50% of waveform all Vdds
Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform
Vdd = +1.8 V from 20% to 80% of waveform
Pin 1, OE or ST
Pin 1, OE or ST
Pin 1, OE logic high or logic low or ST logic high
Pin 1, ST logic Low
Measured from the time Vdd reaches its rated min value
F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles
Measured from the time ST pin crosses 50% threshold
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz
F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz
Notes:
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All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.

Typical values are at +25ºC and nominal supply voltage.
Absolute Maximum Limits
Storage Temperature
Supply Voltage (Vdd)
Electrostatic Discharge
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
260ºC max
150ºC max
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 1 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Ordering Information:
Part Number Guide
Packages
IM801B – 5.0 x 3.2
IM801C – 3.2 x 2.5
IM801D – 2.5 x 2.0
IM801E – 2.0 x 1.6
Input Voltage
Operating Temperature
Output Drive
Strength
1 = +1.8 V
6 = +2.5 V
2 = +2.8 V
7 = +3.0 V
3 = +3.3 V
1 = 0ºC to +70ºC
2 = -40ºC to +85ºC
3 = -20ºC to +70ºC
- = Default
(see tables 2
through 6)
Stability
(ppm)
F = ±20
A = ±25
B = ±50
Select Function
H = Tri-State
S = Standby
O = N/C
Frequency
-
Frequency
Sample Part Number: IM801C-62-FS-20.0000MHz
This 20.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive
Strength (Rise and Fall Time) is the default value 1.0 nSec per Table 3 with 15 pF load. With Pin 1 function as Standby
Sample Part Number: IM801D-71RAO-66.0000MHz
This 66.0000 MHz oscillator in a 2.5 x 2.0 package with stability ±25 ppm from 0ºC to +70ºC using a supply voltage of +3.0 V. The Output Drive
Strength (Rise and Fall Time) is the R drive strength is 4.54 nSec per Table 5 with 30 pF load. With Pin 1 function is not connected
Notes:
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Not all options are available at all frequencies and temperatures ranges.
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Please consult with sales department for any other parameters or options.

Oscillator specification subject to change without notice.
Test Circuit
Waveform
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 2 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Performance Plots:
Figure 1: Idd vs Frequency
Figure 2: Frequency vs Temperature
Figure 3: RMS Period Jitter vs Frequency
Figure 4: Duty Cycle vs Frequency
Figure 5: 20% to 80% Rise Time vs Temperature
Figure 6: 20% to 80% Fall Time vs Temperature
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 3 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Performance Plots (Cont.)
Figure 7: RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency
Figure 8: RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency
Notes:
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All plots are measured with 15pF load at room temperature unless otherwise stated.
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Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz
Environmental Specifications:
Environmental Compliance
Parameter
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 at +260ºC
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Pb Free Solder Reflow Profile
Units are backward compatible with +240ºC reflow processes
Ts max to TL (Ramp-up Rate)
Preheat
Temperature min (Ts min)
Temperature typ (Ts typ)
Temperature max (Ts max)
Time (Ts)
Ramp-up Tate (TL to Tp
Time Maintained Above
Temperature (TL)
Time (TL)
Peak Temperature (Tp)
Time within 5ºC to Peak
Temperature (Tp)
Ramp-down Rate
Tune 25ºC to Peak Temperature
Moisture Sensitivity Level (MSL)
3ºC / second max
150ºC
175ºC
200ºC
60 to180 seconds
3ºC / second max
217ºC
60 to 150 seconds
260ºC max for seconds
20 to 40 seconds
6ºC / second max
8 minute max
Level 1
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 4 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Pin Functionally
Pin Description
Pin
Symbol
1
OE
Tri-state
ST
Standby
N/C
No Connect
Functionality
High or Open = specified frequency output
Low = Output is high impedance, only output is disabled.
High or Open = specified frequency output.
Low = Output is low. Device goes to sleep mode. Supply current
reduces to standby current.
Any voltage between 0.0 V to Vdd or Open = specified frequency
output
Pin 1 has no functiion
Electrical ground
Oscillator output
Power supply voltage
Pin Assignments
OE
ST 1
N/C
Vdd
3
OUT
Top View
2
GND
Power
3
Out
Output
4
Vdd
Power
Notes:
1. In OE or ST mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally
driven. If Pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.
Pin 1 Configuration Options (OE, or
4
GND 2
, or NC)
Pin 1 of the IM801 can be factory-programmed to support three modes: Output Enable (OE), Standby (ST) or No Connect (NC).
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device
continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the
output is typically enabled in <1 µSec.
Standby
Mode
In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The
current is reduced to a standby current, typically in the range of a few µA. When ST is pulled High, the device goes through the
“resume” process, which can take up to 5 mSec.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level
on Pin 1.
Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.
Parameters
Active current 20.0 MHz (max +1.80 VDC)
OE disable current (max +1.80 VDC)
Standby current (typical +1.80 VDC)
OE enable time at 20.0 MHz (max)
Resume time from standby
(max, all frequency)
Output driver in OE disable/standby mode
Table 1 OE vs.
OE
4.1 mA
4.0 mA
N/A
200 nSec
ST
4.1 mA
N/A
0.6 µA
N/A
NC
4.1 mA
N/A
N/A
N/A
N/A
5 mSec
N/A
High Z
vs. NC
N/A
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 5 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Timing Diagrams:
Figure 9: Startup Timing (OE/ST Mode)
Figure 10: Standby Resume Timing (ST Mode Only)
Figure 11: OE Enable Timing (OE Mode Only)
Figure 12: OE Disable Timing (OE Mode Only)
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 6 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Selectable Drive Strength Options
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Rise/Fall Time Typ (nSec)
Drive Strength
(CLOAD)
L
A
R
B
T
E
U
- = default
Rise/Fall Time Typ (nSec)
5 pF
15 pF
30 pF
45 pF
60 pF
6.16
3.19
2.11
1.65
0.93
0.78
0.70
0.65
11.61
6.35
4.31
3.23
1.91
1.66
1.48
1.30
22.00
11.00
7.65
5.79
3.32
2.94
2.64
2.40
31.27
16.01
10.77
8.18
4.66
4.09
3.68
3.35
39.91
21.52
14.47
11.08
6.48
5.74
5.09
4.56
Table 2: Vdd = +1.8 V Rise / Fall time for Specific CLOAD
Drive Strength
(CLOAD)
L
A
R
B
T
- = default
U
F
15 pF
30 pF
45 pF
60 pF
4.13
2.11
1.45
1.09
0.62
0.54
0.43
0.34
8.25
4.27
2.81
2.20
1.28
1.00
0.96
0.88
12.82
7.64
5.16
3.88
2.27
2.01
1.81
1.64
21.45
11.20
7.65
5.86
3.51
3.10
2.79
2.54
27.79
14.49
9.88
7.57
4.45
4.01
3.65
3.32
Table 3: Vdd = +2.5 V Rise/Fall time for Specific CLOAD
Rise/Fall Time Typ (nSec)
Drive Strength
(CLOAD)
L
A
R
B
T
- = default
U
F
5 pF
Rise/Fall Time Typ (nSec)
5 pF
15 pF
30 pF
45 pF
60 pF
3.77
1.94
1.29
0.97
0.55
0.44
0.34
0.29
7.54
3.90
2.57
2.00
1.12
1.00
0.88
0.81
12.28
7.03
4.72
3.54
2.08
1.83
1.64
1.48
19.57
10.24
7.01
5.43
3.22
2.82
2.52
2.29
25.27
13.34
9.06
6.93
4.08
3.67
3.30
2.99
Table 4: Vdd = +2.8 V Rise/Fall time for Specific CLOAD
Drive Strength
(CLOAD)
L
A
R
B
- = default
E
U
F
5 pF
15 pF
30 pF
45 pF
60 pF
3.60
1.84
1.22
0.89
0.51
0.38
0.30
0.27
7.21
3.71
2.46
1.92
1.00
0.92
0.83
0.76
11.97
6.72
4.54
3.39
1.97
1.72
1.55
1.39
18.74
9.86
6.76
5.20
3.07
2.71
2.40
2.16
24.30
12.68
8.62
6.64
3.90
3.51
3.13
2.85
Table 5: Vdd = +3.0 V Rise/Fall time for Specific CLOAD
Rise/Fall Time Typ (nSec)
Drive Strength
(CLOAD)
L
A
R
B
- = default)
E
U
F
5 pF
15 pF
30 pF
45 pF
60 pF
3.39
1.74
1.16
0.81
0.46
0.33
0.28
0.29
6.88
3.50
2.33
1.82
1.00
0.87
0.79
0.81
11.63
6.38
4.29
3.22
1.86
1.64
1.46
1.31
17.56
8.98
6.04
4.52
2.60
2.30
2.05
1.83
23.59
12.19
8.34
6.33
3.84
3.35
2.93
2.61
Table 6: Vdd = +3.3 V Rise/Fall time for Specific CLOAD
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 7 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Mechanical Detail
Package Dimensions and Suggest Land Pattern
Option E: 2.00 x 1.60 x 0.80 Package
Suggested Land Pattern
2.00 ±0.05
1.23
3
Marking
1.60 ±0.05 0.93
1.50
4
Bottom View
1
2
0.80 max
0.48
1.20
0.8
0.68
0.9
Suggested Land Pattern
Option D: 2.50 x 2.00 x 0.80 Package
1.00
2.50 ±0.05
1.90
3
Marking
2.00 ±0.05 1.10
4
Bottom View
2
0.80 max
1
0.5
1.50
1.0
0.75
1.1
Suggested Land Pattern
Option C: 3.20 x 2.50 x 0.80 Package
3.20 ±0.05
2.1
2.20
3
Marking
2.50±0.05 0.90
4
Bottom View
1
2
0.80 max
0.7
1.90
1.2
0.9
1.4
Suggested Land Pattern
Option B: 5.00 x 3.20 X 0.80 Package
5.00 ±0.05
2.39
3
Marking
3.20 ±0.05 0.80
4
Bottom View
2
0.80 max
2.54
1
1.1
2.20
1.6
1.15
1.5
Marking
Line 1 = XXXXX (Lot Code)
Dot to denote Pin 1 location
Package Information
Leadframe: C194
Plating: NiPdAu
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 8 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Tape and Reel Dimensions
PITCH
Q1 Q2
REEL DIA
TAPE
WIDTH
Q3 Q4
DIRECTION OF FEED
REF: EIA-481-E
Part
Number
Size
Pitch
Tape
Width
Pin
Orient.
IM801B
5.0 x 3.2
8.0 ± 0.1
12.3 max
Q1
IM801C
IM801D
IM801E
3.2 x 2.5
2.5 x 2.0
2.0 x 1.6
4.0 ± 0.1
4.0 ± 0.1
4.0 ± 0.1
8.3 max
8.3 max
8.3 max
Q1
Q1
Q1
Reel
Dia.
180
330
180
180
180
Cou
nt
1000
3000
3000
3000
3000
Notes:

All dimensions are in mm.

Do not scale drawings.
PROPRIETARY AND CONFIDENTIAL
THIS DOCUMENT CONTAINS PROPRIETARY INFORMATION, AND SUCH INFORMATION MAY NOT BE DISCLOSED TO OTHERS FOR ANY
PURPOSE NOR USED FOR MANUFACTURING PURPOSES WITHOUT WRITTEN PERMISSION FROM ILSI America.
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 9 of 9
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