AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.6V E n-channel C C Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI Base part number Package Type AUIRGP4063D AUIRGP4063D-E TO-247 TO-247 GC E E GC TO-247AD AUIRGP4063D-E TO-247AC AUIRGP4063D G Gate C Collector Standard Pack Form Quantity Tube 25 Tube 25 E Emitter Orderable Part Number AUIRGP4063D AUIRGP4063D-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units V V CES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 100 IC @ TC = 100°C ICM Continuous Collector Current 60 Pulse Collector Current, VGE = 15V 144 ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C c 192 IFM Diode Continous Forward Current Diode Maximum Forward Current e 192 V GE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 50 PD @ TC = 25°C Maximum Power Dissipation 330 PD @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and TST G Storage Temperature Range 1 A 82 V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) www.irf.com © 2013 International Rectifier July 12, 2013 AUIRGP4063D/E Thermal Resistance Min. Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) Parameter ––– ––– 0.45 °C/W R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92 R CS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 ––– Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES V(B R )CES / T J T emperature Coeff. of B reakdown Voltage VCE(on) Min. Typ. Collector-to-E mitter B reakdown Voltage 600 Collector-to-Emitter Saturation Voltage — Max. Units — — 0.30 — — 1.6 1.9 — 1.9 — — 2.0 — V Conditions VGE = 0V, IC = 150μA CT 6 IC = 48A, VGE = 15V, T J = 25°C V 5,6 ,7 IC = 48A, VGE = 15V, T J = 150°C 9,10,11 IC = 48A, VGE = 15V, T J = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 Threshold Voltage temp. coefficient — -21 — gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 150 μA VGE = 0V, VCE = 600V — 450 1000 VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A — 1.45 — — — ±100 Gate-to-Emitter Leakage Current CT 6 V/°C VGE = 0V, IC = 1mA (25°C-175°C) VGE(t h) / T J IGES R ef .F i g f V VCE = VGE , IC = 1.4mA 9 , 10, mV/°C VCE = VGE , IC = 1.0mA (25°C - 175°C) 11, 12 VGE = 0V, VCE = 600V, T J = 175°C 8 IF = 48A, T J = 175°C nA VGE = ±20V Switching Characteristics @ T J = 25°C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter — 95 Max. Units 140 Q ge Gate-to-Emitter Charge (turn-on) — 28 42 Q gc Gate-to-Collector Charge (turn-on) — 35 53 nC Conditions R ef .F i g IC = 48A 24 VGE = 15V CT 1 VCC = 400V Eon Turn-On Switching Loss — 625 1141 Eoff Turn-Off Switching Loss — 1275 1481 IC = 48A, VCC = 400V, VGE = 15V Etotal Total Switching Loss — 1900 2622 td(on) Turn-On delay time — 60 78 tr Rise time — 40 56 td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss — 1625 — Eoff Turn-Off Switching Loss — 1585 — Etotal Total Switching Loss — 3210 — E nergy los s es include tail & diode revers e recovery td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14 , 16 tr Rise time — 45 — RG = 10 , L = 200μH, LS = 150nH CT 4 td(off) Turn-Off delay time — 165 — tf Fall time — 45 — Cies Input Capacitance — 3025 — Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 μJ CT 4 RG = 10 , L = 200μH, LS = 150nH, T J = 25°C E nergy los s es include tail & diode revers e recovery IC = 48A, VCC = 400V, VGE = 15V ns CT 4 RG = 10 , L = 200μH, LS = 150nH, T J = 25°C IC = 48A, VCC = 400V, VGE =15V μJ ns RG=10 , L=200μH, LS =150nH, T J = 175°C f T J = 175°C 13 , 15 CT 4 WF 1, W F 2 WF 1 WF 2 pF VGE = 0V 23 T J = 175°C, IC = 192A 4 VCC = 480V, Vp =600V CT 2 Rg = 10 , VGE = +15V to 0V — — μs VCC = 400V, Vp =600V 22 , CT 3 Rg = 10 , VGE = +15V to 0V WF 4 Erec Reverse Recovery Energy of the Diode — 845 — μJ T J = 175°C trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10 , L =200μH, Ls = 150nH Notes: VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10. This is only applied to TO-247AC package. 2 www.irf.com © 2013 International Rectifier 17, 18, 19 20 , 2 1 WF 3 Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. July 12, 2013 AUIRGP4063D/E 100 400 300 60 Ptot (W) IC, Collector Current (A) 80 40 200 100 20 0 0 25 50 75 100 125 150 175 25 50 75 100 T C, Case Temperature (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 150 175 Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10μsec 100 IC (A) 100μsec IC (A) 125 T C (°C) 1msec 10 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ 175°C; VGE =15V 200 180 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 160 100 80 120 100 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 3 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 ICE (A) 140 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V 200 160 1000 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs July 12, 2013 AUIRGP4063D/E 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 180 160 160 140 120 -40°c 25°C 175°C 120 IF (A) ICE (A) 140 180 100 100 80 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 24A ICE = 48A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 10 ICE = 96A 8 12 ICE = 24A ICE = 48A 10 ICE = 96A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 18 180 16 160 14 140 ICE = 24A ICE = 48A ICE = 96A 8 ICE (A) VCE (V) 200 10 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 12 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C T J = 25°C T J = 175°C 120 100 80 6 60 4 40 2 20 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 VF (V) VCE (V) 12 3.0 www.irf.com © 2013 International Rectifier 0 5 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs July 12, 2013 AUIRGP4063D/E 6000 1000 5000 Swiching Time (ns) EOFF Energy (μJ) 4000 EON 3000 2000 tdOFF 100 tdON tF tR 1000 0 10 0 50 100 150 0 20 40 60 80 100 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V 5000 1000 4500 tdOFF EOFF Swiching Time (ns) Energy (μJ) 4000 EON 3500 3000 2500 tR tdON 100 tF 2000 1500 1000 10 0 25 50 75 100 125 0 25 Rg () 45 100 125 Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 45 40 40 RG = 10 35 35 30 RG = 22 25 20 IRR (A) IRR (A) 75 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V RG = 47 15 RG = 100 10 30 25 20 15 5 0 10 0 20 40 60 80 100 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 50 www.irf.com © 2013 International Rectifier 0 25 50 75 100 125 RG ( Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C July 12, 2013 AUIRGP4063D/E 45 4000 40 3500 96A 3000 QRR (μC) IRR (A) 35 30 25 2500 100 22 47 2000 20 10 48A 24A 1500 15 1000 10 0 200 400 600 800 0 1000 500 1500 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 900 800 1000 RG = 10 18 400 16 350 14 300 12 250 10 200 8 150 6 100 700 Energy (μJ) 500 400 RG = 47 300 RG = 100 200 100 50 4 0 0 20 40 60 80 8 100 10 12 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) IF (A) 1000 Coes 100 Cres 10 V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 100 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Time (μs) RG = 22 600 www.irf.com © 2013 International Rectifier 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH July 12, 2013 AUIRGP4063D/E 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 2 1 R3 R3 3 2 C 3 Ri (°C/W) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 Ci= iRi Ci iRi Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 J SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 R1 R1 J 1 1 R2 R2 2 R3 R3 3 2 Ci= iRi Ci iRi C 3 Ri (°C/W) i (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier July 12, 2013 AUIRGP4063D/E L L VC C D UT 0 80 V DU T 4 80V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T 4x DC L - 5V 360V DU T / D RIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit R= Fig.C.T.4 - Switching Loss Circuit VCC ICM C force 400μH D1 10K C sense DUT VCC G force DUT 0.0075μ Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit July 12, 2013 AUIRGP4063D/E 700 140 600 120 600 120 500 100 500 100 80 tf 300 60 90% ICE 20 5% ICE 0 0.10 0.60 300 40 10% test 100 0 0 EON -20 1.10 -100 6.20 6.40 6.60 6.80 -20 7.00 Time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 60 50 600 500 500 40 QRR 30 VCE (V) 10 0 -10 10% Peak IRR Peak IRR -20 ICE VCE 400 tRR 20 IRR (A) 20 5% VCE Time(μs) 400 300 300 200 200 100 100 0 -30 -40 -0.15 -0.05 0.05 0.15 0.25 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 60 90% test 200 0 EOFF Loss -100 -0.40 TEST CURRE 40 5% VCE 100 80 www.irf.com © 2013 International Rectifier ICE (A) 200 VCE (V) VCE (V) 400 tr 400 0 -100 -5.00 0.00 5.00 -100 10.00 time (μS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 July 12, 2013 AUIRGP4063D/E TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUGP4063D YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier July 12, 2013 AUIRGP4063D/E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number AU4063D-E YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier July 12, 2013 AUIRGP4063D/E † Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Machine Model Class M4 (±425V) (per AEC-Q101-002) Human Body Model Class H2 (±4000V) (per AEC-Q101-001) Charged Device Model Class C5 (±1125V) (per AEC-Q101-005) ESD RoHS Compliant †† †† †† Yes Qualification standards can be found at International Rectifiers web site: Highest passing voltage. 12 † www.irf.com © 2013 International Rectifier http://www.irf.com July 12, 2013 AUIRGP4063D/E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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