ON EFC6611R N-channel power mosfet Datasheet

Ordering number : ENA2291A
EFC6611R
N-Channel Power MOSFET
12V, 27A, 3.2mΩ, Dual EFCP
http://onsemi.com
Features
 2.5V drive
 Protection diode in
 Halogen free compliance
 Common-drain type
 2KV ESD HBM
Applications
 Lithium-ion battery charging and discharging switch
Specifications
EFCP3517-6DGH-020
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Source to Source Voltage
VSSS
12
V
Gate to Source Voltage
VGSS
8
V
Source Current (DC)
IS
27
A
Source Current (Pulse)
ISP
PW100s, duty cycle1%
100
A
Total Dissipation
PT
When mounted on ceramic substrate (5000mm20.8mm)
2.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
Symbol
RJA
Value
Unit
50
C /W
When mounted on ceramic substrate (5000mm20.8mm)
Electrical Characteristics at Ta  25C
Parameter
Symbol
Value
Conditions
min
Source to Source Breakdown Voltage
V(BR)SSS
IS=1mA, VGS=0V
Test Circuit 1
Zero-Gate Voltage Source Current
ISSS
VSS=10V, VGS=0V
Test Circuit 1
Gate to Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Test Circuit 2
Gate Threshold Voltage
VGS(th)
VSS=6V, IS=1mA
Test Circuit 3
Forward Transconductance
gFS
VSS=6V, IS=3A
Test Circuit 4
typ
Unit
max
12
V
0.5
19
1
A
1
A
1.3
V
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40214HK TC-00003102/21214TKIM No.A2291-1/6
EFC6611R
Continued from preceding page.
Parameter
Static Source to Source On-State
Resistance
Symbol
Value
Conditions
min
typ
max
2.3
3.2
Unit
RSS(on)1
IS=5A, VGS=4.5V
Test Circuit 5
1.8
m
RSS(on)2
IS=5A, VGS=4.0V
Test Circuit 5
1.9
2.4
3.2
m
RSS(on)3
IS=5A, VGS=3.8V
Test Circuit 5
2
2.6
3.2
m
RSS(on)4
IS=5A, VGS=3.1V
Test Circuit 5
2.1
3.3
4.4
m
RSS(on)5
IS=5A, VGS=2.5V
Test Circuit 5
2.7
4.0
6.3
m
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
17,700
ns
Total Gate Charge
Qg
VSS=6V, VGS=4.5V, IS=27A Test Circuit 7
100
nC
Forward Source to Source Voltage
VF(S-S)
IS=3A, VGS=0V
0.75
VSS=6V, VGS=4.5V, IS=3A
Test Circuit 6
Test Circuit 8
80
ns
570
ns
38,000
ns
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
Package
EFC6611R-TF
Packing Type: TF
EFCP
Shipping
note
5,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
Electrical Connection
4, 6
ML
TF
LOT No.
Rg
5
Rg
2
Rg=200
1, 3
No.A2291-2/6
EFC6611R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
ISSS
S2
S2
G2
G2
A
G1
VSS
G1
A
VGS
S1
Test Circuit 3
VGS(th)
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VGS
VSS
G1
VSS
G1
VGS
S1
S1
Test Circuit 6
td(on), tr, td(off), tf
Test Circuit 5
RSS(on)
S2
S2
IS
RL
G2
G2
V
V
G1
G1
VGS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
Test Circuit 8
VF(S-S)
Test Circuit 7
Qg
S2
S2
IS
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G2
G2
V
IG =1mA
G1
RL
G1
S1
S1
PG
VGS=0V
VSS
When FET1 is
measured,+4.5V is added to
VGS of FET2.
When FET2 is measured, the position of FET1 and FET2 is switched.
No.A2291-3/6
EFC6611R
No.A2291-4/6
EFC6611R
No.A2291-5/6
EFC6611R
Package Dimensions
unit : mm
EFC6611R-TF
CSP6, 1.77x3.54 / EFCP3517-6DGH-20
CASE 568AL
ISSUE O
E
A B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
b
b1
D
E
e
e2
L
D
PIN A1
REFERENCE
0.05 C
2X
0.05 C
2X
TOP VIEW
A
0.03 C
RECOMMENDED
SOLDERING FOOTPRINT*
0.03 C
C
SIDE VIEW
e2
2X
b
1
e2
2
2X
8X
R0.125
4X
1.25
0.25
PACKAGE
OUTLINE
0.50
PITCH
e
0.03 C
1
2.00
PITCH
b1
6
5
4
L
1: Source1
SEATING
PLANE
e/2
3
0.05 C A B
4X
MILLIMETERS
MIN
MAX
−−−
0.22
0.22
0.28
0.22
0.28
1.77 BSC
3.54 BSC
0.50 BSC
1.00 BSC
1.22
1.28
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2: Gate1
3: Source1
4: Source2
5: Gate2
6: Source2
Note on usage : Since the EFC6611R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.A2291-6/6
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