M02139
1G/10G Gbps TIA with AGC and Rate Select
The M02139 is a multi-rate TIA supporting data rates from 1 Gbps to 10.3 Gbps and having a wide input dynamic
range to support different transmission distance requirements. Input overload of 2 mAPP and input sensitivity of
better than -19 dBm are useful for single-mode, high power long haul links, as well as short haul multi-mode links.
In order to satisfy such high sensitivity and good optical overload requirements, automatic gain control (AGC) is
implemented in the M02139. The AGC monitors the output amplitude and automatically reduces the TIA gain when
the photodiode current exceeds the AGC threshold, maintaining the output at a constant level.
Requiring no extra pins on the ROSA, rate select is controlled by the DC potential on the mon pad. Low rate is
optimized for 1G/1.25 Gbps performance with a typical sensitivity lower than -22 dBm. A replica of the average
photodiode current is available at the MON pad for photo-alignment and SFF-8472 Rx power monitoring.
Applications
Features
• Fibre Channel Transceivers (2x, 4x, 8x, 10x)
• Typical -19 dBm average sensitivity @ 10.3 Gbps
• 10GBASE-SR, IR and LR Links
• Low rate mode for 1G/1.25 Gbps operation
• SONET/SDH OC-192/STM-64
• No filter (PINK) capacitor required
• 10 Gbps ROSA
• AGC provides dynamic range of 23 dB
• SFP/SFP+ Modules
• 3.8 kΩ differential transimpedance
• 10GBASE/1GBase Dual Rate Modules
• 2 mAPP overload input current
• XFP, XENPAK, X2 and 300-pin MSA transponder modules
• Photodiode current monitor
• Internal or external bias for photodiode
• Single +3.3 V supply
• Available in die form only
Typical Applications Diagram
1 nF
PINK
PINA
VCC
Typically
AC-Coupled
to Limiting
Amplifier
DOUT
M02139
Limiting
Amplifier
DOUTB
Monitor Output /Rate Select
Rm
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Ordering Information
Part Number
Package
Operating Temperature
M02139-13
Waffle Pack
–40 °C to 95 °C
M02139-23
Sawn Quartered Wafer
–40 °C to 95 °C
M02139-33
Expanded whole wafer on a ring
–40 °C to 95 °C
Revision History
Revision
Level
Date
Description
D
Release
August 2011
Added 10G specifications. Added final specifications.
C
Preliminary
March 2011
Removed 10G support and added lower data rate sensitivity performance.
Revised ordering information details.
B
Preliminary
August 2010
A
Preliminary
April 2010
Corrected Figure 3-2 and other text edits.
Initial release.
Typical Eye Diagram
Pad Configuration
3
PINK
4
PINA
2
1
14
13
VCC
AGC
DOUT
NC
VCC
MON
DOUT
NC
7
8
5
6
12
11
GND
GND
9
10
10.3 Gbps, -15 dBm, 20 mV/div, 16 ps/div
Die size ≈ 1242 x 932 µm
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1.0 Product Specification
1.1
Description of Key Specifications
1.1.1
Input Referred Noise
In the design of a Transimpedance Amplifier, the primary goal is to minimize the input referred noise of the
amplifier. This achieves the best S/N ratio for optimum bit error rate performance of the incoming optical data
stream. The noise performance of a TIA is a key specification for meeting the stringent optical sensitivity
requirement. In general, the input referred noise calculations for a TIA are identical to those in other conventional
amplifiers. The input referred noise can be determined from several methods. Traditionally at Mindspeed, TIA noise
is obtained from dividing the output RMS voltage noise of the TIA by the transimpedance. The small signal
transimpedance of the TIA can be calculated by applying a known p-p input current and then measuring the p-p
differential output voltage. The equations used for IN (Input Referred Noise) and GTIA (Transimpedance) are shown
below. The TIA output RMS noise can be measured conveniently by using a wide band oscilloscope (or by using a
power meter and converting the noise power to noise voltage).
IN = (VoutRMS / GTIA)
GTIA = (VoutPP/ I_inputPP), where:
IN = Input referred noise in RMS
GTIA = TIA small signal transimpedance
I_inputPP= p-p input current
1.1.2
Optical Input Sensitivity
TIA input sensitivity can be calculated from the optical sensitivity equation directly based on the input referred
noise, photodiode responsivity and transmitter extinction ratio information. Note that the Signal to Noise (S/N) must
exceed 14.1 to achieve a system bit error rate (BER) of 1x10-12.
Sensitivity = 10log {((S/N x IN x (ER + 1)) / (2 x ρ x (ER – 1))) x 1000} dBm
Where:
Sensitivity = Input sensitivity expressed in average power
S/N = 14.1(for 10-12 BER)
IN = Input Referred Noise in RMS
ER = Extinction Ratio = 10 (typically)
ρ = Photodiode Responsivity = 0.9 (typically)
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Product Specification
1.2
Absolute Maximum Ratings
These are the absolute maximum ratings at or beyond which the device can be expected to fail or be damaged.
Reliable operation at these extremes for any length of time is not implied.
Table 1-1.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
-0.4 to +4
V
-65 to +150
°C
5.0
mA
8
mAPP
-0.4 to 1.65
V
-0.4 V to VCC +0.4 V
V
Maximum average current sourced out of PINK
10
mA
Maximum average current sourced out of Dout and DoutB
10
mA
VCC
Power supply (VCC-GND)
TSTG
Storage temperature
IIN_AVG
PINA Input current (average)
IIN_PP
PINA Input current (peak to peak)
VPINA, VDout,
VDoutB,VAGC
Maximum input voltage at PINA, Dout, DoutB and AGC
VPINK, VMON
Maximum input voltage at PINK and MON
IPINK
IDout, IDoutB
1.3
Recommended Operating Conditions
Table 1-2.
Recommended Operating Conditions
Parameter
VCC
Power supply (VCC - GND)
CPD
Max. Photodiode capacitance (Vr = 1.75 V when using PINK), for
10.3 Gbps data rate
TA
Operating ambient temperature
RLOAD
Recommended differential output loading
Rating
Units
3.3 ± 10%
V
0.25
pF
-40 to +95
°C
100
Ω (1)
NOTES:
1.
100 Ω is the load presented by the input of a Mindspeed post amp.
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Product Specification
1.4
DC Characteristics
VCC = +3.3 V ±10%, TA = -40 °C to +95 °C, TJ = -40 °C to +110 °C, typical specifications are for VCC = 3.3 V,
TA = 25 °C, unless otherwise noted.
Table 1-3.
DC Characteristics
Symbol
Parameter
Min
Typ
Max
Units
ICC
Supply current (no loads)
—
39
43
mA
VB
Photodiode bias voltage (PINK - PINA)
1.6
1.8
2
V
Common mode output voltage
—
2.6
—
V
Mon Pad voltage for High Rate (> 1.25 Gbps) operation
0
—
1.0
Mon Pad voltage for Low Rate (≤ 1.25 Gbps) operation
1.6
—
2.0 (1)
Output resistance - differential
100
120
140
VCM
V_RateSEL
ROUT
V
Ω
NOTES:
1.
2.0 V is the maximum value to allow Imon to source current as defined by SFF-8472 Average Power Monitoring.
1.5
AC Characteristics
VCC = +3.3 V ±10%, CIN = 0.25 pF, LIN = 0.5 nH, TA = -40 °C to +95 °C, TJ = -40 °C to +110 °C, typical
specifications are for VCC = 3.3 V, TA = 25 °C, unless otherwise noted.
Table 1-4.
AC Characteristics
Parameter
Conditions
Minimum
Typical
Maximum
Units
Small Signal Bandwidth
-3 dB electrical (Below AGC turn-on,
linear gain region)
—
6.0
—
GHz
Small Signal Transimpedance
Differential Output (Below AGC turnon, linear gain region)
—
3800
—
Ω
2.0
3.0
—
mAPP
+4
—
—
dBm
Iin range: 100 µAPP – 2.0 mAPP
150
200
—
mVPP
High rate (unfiltered)
—
1500
—
nA
Low rate (unfiltered)
—
550
—
DCD
Duty Cycle Distortion p-p
Iin range: 20 µAPP – 2.0 mAPP
—
5
10
ps
DJ
Deterministic Jitter p-p
Iin range: 20 µAPP – 2.0 mAPP
(Includes DCD)
—
8
19
ps
AGC Settling Time
To reach 1% of AGC final value within
six time constants
1
—
—
µs
Low Frequency Cutoff
Low Frequency Cut-off
-3 dB electrical
—
45
70
kHz
Overload Input Current (1)
Maximum Input Saturation
(2)
Maximum Differential Output Swing
Input Referred Noise (RMS)
02139-DSH-001-D
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Product Specification
Table 1-4.
AC Characteristics
Parameter
Conditions
Minimum
Typical
Maximum
Units
Photodiode current monitor Offset
No input current
—
2
—
µA
Photodiode current monitor Accuracy (4)
Iin range: 10 µAAVG –2.0 mAAVG after
offset removed, VMON = 0 – 2 V
—
—
1
dB
Photodiode current monitor Gain Ratio
VMON = 0 to 2 V
—
1:1
—
—
Power Supply Rejection Ratio
DC to 1 MHz
—
24
—
dB
—
-18.5
—
—
-19.5
—
6.144 Gbps (5)
—
-20.5
—
1.25 Gbps (5)
—
-22
—
10.3 Gbps
Optical input sensitivity
8.5 Gbps
(5)
(5)
dBm
NOTES:
1.
Overload is the largest p-p input current that the M02139 accepts while meeting specifications.
2.
The device may be damaged beyond this optical input signal level.
3.
Input Referred Noise is derived by calculation as (RMS output noise) / (Gain at 100 MHz).
4.
Includes variation over supply and temperature.
5.
Measured by using 10 -12 BER. Transmitter extinction ratio is 10 dB and responsivity of photo diode is 0.9 A/W.
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2.0 Pad Definitions
Figure 2-1.
Table 2-1.
Bare Die Layout
3
PINK
4
PINA
2
1
14
13
VCC
AGC
DOUT
NC
GND
VCC
MON
DOUT
NC
GND
5
6
7
8
12
11
10
9
Pad Descriptions
Die Pad #
Name
Function
1
AGC
Monitor or force AGC voltage.
2
VCC
Power pin. Connect to most positive supply.
3
PINK
Common PIN input. Connect to photo diode cathode.(1)
4
PINA
Active PIN input. Connect to photo diode anode.
5
VCC
Power pin. Connect to most positive supply.
6
MON
Analog current source output and rate selection function input pin. Current matched to average photodiode
current. If externally biasing the photodiode cathode the MON can be used for rate selection function only.
See Section 3.2.4 for detailed information.
7
DOUT
Differential data output (goes low as light increases).
8,13
NC
9,10,11, 12
GND
Ground pin. Connect to the most negative supply (2).
14
DOUT
Differential data output (goes high as light increases).
NA
Backside
No Connect. Leave floating.
Backside. Connect to the lowest potential, usually ground.
NOTES:Notes:
1.
Alternatively the photodiode cathode may be connected to a decoupled positive supply, e.g. VCC.
2.
All ground pads are common on the die. Only one ground pad needs to be connected to the TO-Can ground. However, connecting more than one
ground pad to the TO-Can ground, particularly those across the die from each other can improve performance in noisy environments.
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3.0
3.1
Functional Description
Overview
The M02139 is a 10.3 Gbps TIA with a wide input dynamic range to support different transmission distance
requirements. Input overload of 2.0 mAPP is provided to support short-haul fiber optic systems. In order to satisfy
such high sensitivity and good optical overload requirements, automatic gain control circuit (AGC) is implemented
in the M02139. The AGC monitors the output amplitude and automatically reduces the TIA gain when the
photodiode current exceeds the AGC threshold, maintaining the output at a constant level.
A replica of the average photodiode current is available at the MON pad for photo-alignment and SFF-8472 Rx
power monitoring. A low pass filter can be engaged by pulling IMON above 1.6 V, for 1.25 Gbps operation.
Figure 3-1.
M02139 Block Diagram
MON
Rf
PINK
BGAP
AGC
VREG
Vreg
Voltage Reg
DOUT
TIA
PINA
Gain
Output
Buffer
DOUT
DC
Servo
Current
Ref Gen
AGC
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Functional Description
3.2
General Description
3.2.1
TIA (Transimpedance Amplifier)
The transimpedance amplifier consists of a high gain single-ended amplifier (TIA) with a feedback resistor. The
feedback creates a virtual low impedance at the input and nearly all of the input current passes through the
feedback resistor defining the voltage at the output. Advanced design techniques are employed to maintain the
stability of this stage across all input conditions.
An on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to
several MHz.
The circuit is designed for PIN photodiodes with the anode connected to the input of the TIA and the cathode
connected to AC ground, such as the provided PINK terminal. Reverse DC bias is applied to reduce the photodiode
capacitance. PIN photodiodes and Avalanche photodiodes may also be connected externally to a voltage higher
than VCC. Care should be taken to correctly sequence the power supply to the externally biased photodiode so that
the bias voltage does not appear when the TIA is powered down. Doing so may cause damage to the input of the
TIA, as the photodiode bias can become capacitively coupled to the PIN input, and cause damage.
3.2.2
Output Stage
The signal from the TIA enters a phase splitter followed by a DC-shift stage and a pair of voltage follower outputs.
These are designed to drive a differential (100 Ω) load. They are stable for driving capacitive loads such as
interstage filters. Each output has its own GND pad; it is recommended but not required that all four GND pads on
the chip should be connected. Since the M02139 exhibits rapid roll-off (3 pole), no external filtering is necessary.
3.2.3
Offset Cancellation DC Servo
Due to the high gain of the M02139 transimpedance amplifier, any amount of input offset voltage would be
amplified and create distortion at the output. Therefore, an offset cancellation circuit is used to remove input offset.
The RC offset cancellation circuit sets the low frequency cutoff to 50 kHz.
3.2.4
Monitor O/P and Rate Select Between 1G and 10G Operations
The monitor is a high impedance output which sources an average photodiode current for alignment or power
monitoring use. This output is mirrored off the PINK current source, and PINK must be used to enable IMON
usage. If PINK is not used as in the case of externally biased PIN or APD detectors, then photo current must be
monitored via that external bias supply and the MON pin tied to high or low depending on the input data rate.
This output is compatible with the DDMI Receive Power Specification (SFP-8472). An interfacing example is shown
below where the M02139 is connected to the M0217x driver family General Purpose I/O (GPIO) and Rx Power
monitoring A/D. Ensure that the voltage on VMON is in the range of 0 to 2.0 V. Refer to Table 3-1 and Figure 3-2.
Table 3-1.
Selection of Rm for Maximum Input Current
IIN Max (mA)
Optical Power (dBm)
Rm (Ω)
2
+3
500
1
0
1000
0.5
-3
2000
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Functional Description
For non-217X implementations, assume that the MON output would go into a resistor that is measured with a
voltage ADC. That being the case, a voltage drop (diode or other) would need to be switched in and out to create
the necessary voltage at the MON pin for both rate settings.
The high impedance O/P source replicates the average photodiode current for monitoring purposes. The IMON pin
can be also used to select between 1G and 10G operation. When the 1G mode is selected, the TIA output is
filtered to reduce the bandwidth to 1G levels and hence improve sensitivity. The device is in low rate mode for
Vmon greater than 1.6 V and in high rate mode for Vmon less than 1 V. The IMON feature can still be used under
the 1G and 10G operations.
Figure 3-2.
Implementation with M0217x
M02139
BW_Sel
(high=10G)
+
10G Operation:
- RMON value selected to limit fullscale voltage to <1V
- GPIO is set low
- AD_RxP in voltage mode
1.3V
-
MON
1G Operation:
- GPIO is set to an input (high-Z)
- AD_RxP is in current mode (input
voltage ~1.6V)
RMON
AD_RxP
GPIO
M0217x
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4.0 Applications Information
4.1
Recommended Pin Diode Connections
Figure 4-1.
Suggested PIN Diode Connection Methods
VCC
PDC_Bias
500 Ω
(optional )
1 nF
PDC
VCC
PINK
(optional )
1 nF
DOUT
470 pF
M02139
PINA
GND
PINK
PINA
MON
GND
DOUTB
MON
TIA Bond Pad
Rmon
(optional. For
IMON to V MON
Recommended Circuit
DOUT
M02139
DOUTB
TIA Bond Pad
TO Can Lead
VCC
TO Can Lead
Alternative Circuit: External PD/APD Bias
NOTE:
The monitor output is not usable if PINK does not bias the PD.
Selection of Rm depends on the maximum input current as detailed in Table 3-1.
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Applications Information
4.2
TO-Can Layout
Figure 4-2. Typical Layout Diagram with Photodiode Mounted on Metallized Shim or TO-Can Base (5 pin TO-Can)
DOUT
DOUTB
M02139
Shim
VCC
MON
NOTES:
Typical application inside of a 5 lead TO-Can.
It is only necessary to bond one VCC pad and one GND pad. However, bonding both GND pads is encouraged for improved performance in noisy
environments.
The backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die attach material. If a monitor output is
not required then a 4 lead TO-Can may be used.
4.3
Treatment of PINK
PINK does not require capacitor bypassing regardless of whether or not it is used to bias the photo diode.
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Applications Information
4.4
T0-Can Assembly Recommendations
Figure 4-3.
TO-Can Assembly Diagram
NOT Recommended Example
PIN Diode
This bond is
unreliable
This bond is too
long and
unreliable
M02139
Ceramic Shim
Submount
TO Can Leads
@4 or 5
TO-CAN Header
Recommended Example
M02139
PIN Diode
Metal Shim
Ceramic Shim
Submount
TO Can Leads
@4 or 5
TO-CAN Header
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Applications Information
4.4.1
Assembly
The M02139 is designed to work with a wirebond inductance of 0.5 nH ± 0.25 nH. Many existing TO-Can
configurations will not allow wirebond lengths that short, since the PIN diode submount and the TIA die are more
than 1 mm away in the vertical direction, due to the need to have the PIN diode in the correct focal plane. This can
be remedied by raising up the TIA die with a conductive metal shim. This will effectively reduce the bond wire
length. Refer to Figure 4-3 on the previous page for details.
Mindspeed recommends ball bonding with a 1 mil (25.4 µm) gold wire. For performance reasons the PINA pad has
less via material connected to it. It therefore requires more care in setting of the bonding parameters. For the
same reason PINA has limited ESD protection.
In addition, please refer to the Mindspeed Product Bulletin (document number 0201X-PBD-001). Care must be
taken when selecting chip capacitors, since they must have good low ESR characteristics up to 1.0 GHz. It is also
important that the termination materials of the capacitor be compatible with the attach method used.
For example, Tin/Lead (Pb/Sn) solder finish capacitors are incompatible with silver-filled epoxies. Palladium/Silver
(Pd/Ag) terminations are compatible with silver filled epoxies. Solder can be used only if the substrate thick-film
inks are compatible with Pb/Sn solders.
4.4.2
Recommended Assembly Procedures
For ESD protection the following steps are recommended for TO-Can assembly:
a. Ensure good humidity control in the environment (to help minimize ESD).
b. Consider using additional ionization of the air (also helps minimize ESD).
c. As a minimum, it is best to ensure that the body of the TO-can header or the ground lead of the header is
grounded through the wire-bonding fixture for the following steps. The wire bonder itself should also be
grounded.
1.
2.
3.
4.
5.
6.
Wire bond the ground pad(s) of the die first.
Then wire bond the VCC pad to the TO-Can lead.
Then wire bond any other pads going to the TO-Can leads (such as DOUT, DOUT and possibly MON)
Next wire bond any capacitors inside the TO-Can.
Inside the TO-can, wire bond PINK.
The final step is to wire bond PINA.
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Applications Information
4.5
TIA Use with Externally Biased Detectors
In some applications, Mindspeed TIAs are used with detectors biased at a voltage greater than available from TIA
PIN cathode supply. This works well if some basic cautions are observed. When turned off, the input to the TIA
exhibits the following I/V characteristic:
Figure 4-4.
TIA Use with Externally Biased Detectors, Powered Off
PINA Unbiased
100
50
0
-800
-600
-400
-200
0
200
400
600
800
1000
1200
µA
-50
-100
-150
-200
-250
-300
mV
In the positive direction the impedance of the input is relatively high.
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Applications Information
After the TIA is turned on, the DC servo and AGC circuits attempt to null any input currents (up to the absolute
maximum stated in Table 1-1) as shown by the I/V curve in Figure 4-5.
Figure 4-5.
TIA Use with Externally Biased Detectors, Powered On
PINA biased
1000
800
600
400
µA
200
0
-300
-200
-100
0
100
200
300
400
500
600
700
-200
-400
-600
-800
-1000
mV
It can be seen that any negative voltage below 200 mV is nulled and that any positive going voltage above the
PINA standing voltage is nulled by the DC servo. The DC servo upper bandwidth varies from part to part, but is
typically at least 50 kHz.
When externally biasing a detector such as an APD where the supply voltage of the APD exceeds that for PINA
Table 1-1, care should be taken to power up the TIA first and to keep the TIA powered up until after the power
supply voltage of the APD is removed. Failure to do this with the TIA unpowered may result in damage to the input
FET gate at PINA. In some cases the damage may be very subtle, in that nearly normal operation may be
experienced with the damage causing slight reductions in bandwidth and corresponding reductions in input
sensitivity.
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5.0 Die Specification
Figure 5-1. Bare Die Layout
Pad
Number
Pad
3
PINK
4
PINA
2
1
14
13
VCC
AGC
DOUT
NC
GND
VCC
MON
DOUT
NC
GND
5
6
7
8
9
X
Y
Pad
Number
11
10
Pad
X
Y
NC
178
-338
1
AGC
-126
338
8 (3)
2 (1)
VCC
-278
338
9 (1, 2)
GND
325
-338
3
PINK
-493
124
10 (1, 2)
GND
426
-338
4
PINA
-493
-124
11(1, 2)
GND
426
338
5
VCC
-278
-338
12(1, 2)
GND
325
338
6
MON
-126
-338
13(1, 2)
GND
178
338
7
DOUT
26
-338
14
DOUT
26
338
NOTES:
1.
12
It is only necessary to bond one VCC pad and one GND pad.
However, bonding more GND pads is encouraged for improved
performance in noisy environments.
2.
Each location is an acceptable bonding location.
3.
Leave floating.
02139-DSH-001-D
Process technology: Silicon-Germanium, Silicon Nitride
passivation
Die thickness: 300 µm
Pad metallization: Aluminum
Die size: 1242 µm x 932 µm
Pad openings: 72 µm sq.
Pad Centers in µm referenced to center of device
Connect backside bias to ground
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General Information:
Telephone: (949) 579-3000
Headquarters - Newport Beach
4000 MacArthur Blvd., East Tower
Newport Beach, CA 92660
© 2011 Mindspeed Technologies®, Inc. All rights reserved.
Information in this document is provided in connection with Mindspeed Technologies® ("Mindspeed®") products.
These materials are provided by Mindspeed as a service to its customers and may be used for informational
purposes only. Except as provided in Mindspeed’s Terms and Conditions of Sale for such products or in any
separate agreement related to this document, Mindspeed assumes no liability whatsoever. Mindspeed assumes
no responsibility for errors or omissions in these materials. Mindspeed may make changes to specifications and
product descriptions at any time, without notice. Mindspeed makes no commitment to update the information and
shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its
specifications and product descriptions. No license, express or implied, by estoppel or otherwise, to any
intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MINDSPEED PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL
DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. MINDSPEED FURTHER DOES NOT WARRANT THE ACCURACY OR
COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE
MATERIALS. MINDSPEED SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
Mindspeed products are not intended for use in medical, lifesaving or life sustaining applications. Mindspeed
customers using or selling Mindspeed products for use in such applications do so at their own risk and agree to
fully indemnify Mindspeed for any damages resulting from such improper use or sale.
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