ON EN6324B Bipolar transistor Datasheet

Ordering number : EN6324B
2SA608N/2SC536N
Bipolar Transistor
http://onsemi.com
(–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA
Applicaitons
•
Capable of being used in the low frequency to high frequency range
Features
•
Large current capacity and wide ASO
Specifications
( ) : 2SA608N
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
(--50)60
V
(--)50
V
VEBO
IC
(--)6
(--)150
ICP
PC
Collector Dissipation
Unit
VCBO
VCEO
Junction Temperature
Tj
Storage Temperature
Tstg
V
mA
(--)400
mA
500
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7542-001
4.5
3.7
2SA608NF-NPA-AT
2SA608NG-NPA-AT
2SC536NF-NPA-AT
2SC536NG-NPA-AT
Package
Shipping
2SA608NF-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
2SA608NG-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
2SC536NF-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
2SC536NG-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
memo
Pb-Free
0.45
0.45
LOT No.
C536
R
A
N
K
LOT No.
R
A
N
K
A608
Marking
14.0
13.7
0.6
1.27
4.0max
0.5
4.5
1.4max
3.5
Device
0.44
1
2.5
2
3
2.5
1 : Emitter
2 : Collector
3 : Base
NPA-WA
Semiconductor Components Industries, LLC, 2013
July, 2013
73113 TKIM TC-00003017/O2412 TKIM/42503 TSIM TA-100055, 100056/ No.6324-1/6
10700 TS (KOTO) TA-2543
2SA608N/2SC536N
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
VCB=(--)40V, IE=0A
VEB=(--)5V, IC=0A
hFE1
VCE=(--)6V, IC=(--)1mA
VCE=(--)6V, IC=(--)0.1mA
hFE2
Gain-Bandwidth Product
fT
Cob
Output Capacitance
Collector to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
min
typ
V(BR)CBO
V(BR)CEO
Emitter to Base Breakdown Voltage
V(BR)EBO
(--)0.1
μA
(--)0.1
μA
560*
70
200
VCB=(--)6V, f=1MHz
IC=(--)100mA, IB=(--)10mA
Collector to Emitter Breakdown Voltage
Unit
max
160*
VCE=(--)6V, IC=(--)10mA
VCE(sat)
VBE(sat)
Base to Emitter Saturation Voltage
Ratings
Conditions
MHz
(4.5)3.0
IC=(--)100mA, IB=(--)10mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
pF
(--)0.3
V
(--)1.0
V
(--)60
V
(--)50
V
(--)6
V
* : The 2SA608N / 2SC536N are classified by 1mA hFE as follow :
Rank
hFE
F
160 to 320
IC -- VCE
μA
--50
μA
--45
A
--40μ
A
--35μ
A
--30μ
--12
--25μA
--20μA
--8
--15μA
--10μA
--4
IC -- VCE
20
2SA608N
2SC536N
50μA
45μA
Collector Current, IC -- mA
--16
16
40μA
35μA
12
30μA
25μA
8
20μA
15μA
4
10μA
--5μA
0
0
--10
--20
--30
--40
Collector to Emitter Voltage, VCE -- V
0
0
--50
20
30
40
50
IT00497
IC -- VBE
240
2SA608N
VCE= --6V
2SC536N
VCE=6V
200
--160
--120
Ta=7
5°C
25°C
--25°
C
--80
--40
160
120
Ta=75
°C
Collector Current, IC -- mA
--200
Collector Current, IC -- mA
10
Collector to Emitter Voltage, VCE -- V
IT00496
IC -- VBE
--240
IB=0μA
5μA
IB=0μA
80
25°C
--25°C
Collector Current, IC -- mA
G
280 to 560
40
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base to Emitter Voltage, VBE -- V
--1.2
IT00498
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, VBE -- V
1.2
IT00499
No.6324-2/6
2SA608N/2SC536N
hFE -- IC
1000
7
Ta=75°C
2
--25°C
25°C
100
7
5
5
5 7--1.0 2 3
5 7 --10
2 3
5 7--100 2 3
Collector Current, IC -- mA
5 7--1000
IT00500
0.1
7
5
3
2
100
7
5
3
2
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
3
2
1.0
7
5
3
2
0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector to Base Voltage, VCB -- V
5
3
2
--0.1
7
5
3
2
5 7 1000
IT00501
3
2
100
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT00503
Cob -- VCB
2SC536N
f=1MHz
3
2
10
7
5
3
2
1.0
7
5
3
2
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector to Base Voltage, VCB -- V
5 7 100
IT00505
VCE(sat) -- IC
2SC536N
IC / IB=10
7
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
7
2 3
2SC536N
VCE=6V
1.0
2SA608N
IC / IB= --10
5 7 100
5
0.1
0.1
5 7 --100
IT00504
VCE(sat) -- IC
--1.0
2 3
f T -- IC
100
7
5
Output Capacitance, Cob -- pF
10
7
5
5 7 10
Collector Current, IC -- mA
2SA608N
f=1MHz
3
2
2 3
7
10
1.0
5 7--1000
IT00502
Cob -- VCB
100
7
5
5 7 1.0
1000
Gain-Bandwidth Product, f T -- MHz
2SA608N
VCE= --6V
2 3
Collector Current, IC -- mA
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
5
10
--0.1 2 3
Output Capacitance, Cob -- pF
25°C
7
2
5
3
2
0.1
7
5
3
2
0.01
--0.01
--1.0
--25°C
100
3
--0.1
Ta=75°C
2
2
10
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
3
3
10
--1.0
2SC536N
VCE=6V
7
DC Current Gain, hFE
DC Current Gain, hFE
5
3
hFE -- IC
1000
2SA608N
VCE= --6V
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT00506
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT00507
No.6324-3/6
2SA608N/2SC536N
ASO
1000
ICP=400mA
3
2
10
IC=150mA
ms
10
100
DC
7
5
0m
s
op
era
tio
3
2SA608N / 2SC536N
Collector Dissipation, PC -- mW
Collector Current, IC -- mA
7
5
PC -- Ta
600
2SA608N / 2SC536N
For PNP, minus sign is omitted.
n
2
10
7
5
3
2
500
400
300
200
100
0
5
7
1.0
2
3
5
7
10
2
3
Collector to Emitter Voltage, VCE -- V
5
7 100
IT00511
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00510
No.6324-4/6
2SA608N/2SC536N
Outline Drawing
2SA608NF-NPA-AT, 2SA608NG-NPA-AT, 2SC536NF-NPA-AT, 2SC536NG-NPA-AT
Mass (g) Unit
0.19
mm
* For reference
No.6324-5/6
2SA608N/2SC536N
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PS No.6324-6/6
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