IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS(on) ≤ D P-Channel Enhancement Mode Avalanche Rated - 100V - 57A Ω 27mΩ G ISOPLUS247 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 57 A IDM TC = 25°C, Pulse Width Limited by TJM - 225 A IA TC = 25°C - 90 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 2500 V~ z 20..120/4.5..27 N/lb. z 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 HZ , RMS t = 1min Md Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated High Current Handling Capability Fast Intrinsic Diode The Rugged PolarPTM Process Low QG Low Drain-to-Tab capacitance Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA -100 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z z V - 4.0 V ±100 nA TJ = 125°C VGS = -10V, ID = - 45A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density - 25 μA - 200 μA 27 mΩ Applications z z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99985B(01/13) IXTR90P10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 45A, Note 1 22 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 37 S 5800 pF 1990 pF 510 pF 25 ns 77 ns 54 ns 60 ns 120 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A RG = 3Ω (External) Qg(on) Qgs ISOPLUS247 (IXTR) Outline VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A Qgd 23 nC 60 nC 1 = Gate 2,4 = Drain 3 = Source 0.66 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A VSD IF = - 45A, VGS = 0V, Note 1 - 3.3 V trr QRM IRM IF = - 45A, -di/dt = -100A/μs Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 144 0.92 -12.8 VR = - 50V, VGS = 0V ns μC A IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR90P10P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -240 -90 VGS = -10V VGS = -10V - 9V -80 -200 - 9V -70 - 8V ID - Amperes ID - Amperes -60 -50 - 7V -40 -30 -160 - 8V -120 - 7V -80 - 6V -20 - 6V -40 - 5V -10 - 5V 0 0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 0 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = - 45A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC -90 2.2 VGS = -10V - 9V -80 VGS = -10V 2.0 -70 R DS(on) - Normalized 1.8 - 8V ID - Amperes -20 VDS - Volts VDS - Volts -60 -50 - 7V -40 -30 - 6V -20 I D = - 90A 1.6 1.4 I D = - 45A 1.2 1.0 0.8 -10 0.6 - 5V 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 -65 VGS = -10V 2.2 -55 TJ = 125ºC -45 1.8 ID - Amperes R DS(on) - Normalized 2.0 1.6 1.4 1.2 -35 -25 -15 TJ = 25ºC 1.0 -5 0.8 0 -20 -40 -60 -80 -100 -120 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -140 -160 -180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR90P10P Fig. 8. Transconductance Fig. 7. Input Admittance 60 -100 -90 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC -80 50 25ºC g f s - Siemens ID - Amperes -70 -60 -50 -40 -30 -20 40 125ºC 30 20 10 -10 0 -3.5 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 0 -10 -20 -30 -40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -60 -70 -80 -90 -100 -110 110 120 Fig. 10. Gate Charge -240 -10 VDS = - 50V -9 -200 I D = - 45A -8 I G = -1mA -7 VGS - Volts -160 IS - Amperes -50 ID - Amperes -120 -6 -5 -4 TJ = 125ºC -80 -3 TJ = 25ºC -2 -40 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 10 20 30 40 Fig. 11. Capacitance 60 70 80 90 100 Fig. 12. Forward-Bias Safe Operating Area 10,000 - 1,000 Ciss 1ms RDS(on) Limit - 100 Coss 1,000 100µs 10ms 100ms ID - Amperes Capacitance - PicoFarads 50 QG - NanoCoulombs VSD - Volts DC - 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTR90P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P10P(B7) 5-13-08