DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D168 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2001 Apr 17 2001 Aug 20 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 FEATURES • Zener and 600 V/250 ns blocking diode in one package • Protects the MOSFET in power IC controllers such as STARPlug(1), TOPSwitch(2) and VIPer(3) • High surge capability • Supports valley switching • Glass passivated junctions Top view • Excellent clamping capability and stability Side view MGU215 • Supplied in 12 mm embossed tape. Fig.1 Simplified outline (DO-214AC) and symbol. DESCRIPTION The SMA ZenBlock is designed to protect the MOSFET in flyback converters against over-voltages caused by the transformer leakage inductance. The SMA ZenBlock combines a zener/TVS with a fast soft-recovery diode in one package, and can be used to replace double diode, RC or RCD snubbers. handbook, halfpage Vo The BZG142 consists of a glass passivated chip in a DO-214AC surface mount package. ZENBLOCK The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. CONTROL MLD682 (1) STARPlug is a trademark of Philips. (2) TOPSwitch is a trademark of Power Integrations. (3) VIPer is a trademark of STMicroelectronics. Fig.2 Typical application. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C Zener Ptot total power dissipation Ttp = 105 °C; see Fig.3 − 2.8 W PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Figs 5 and 6 − 400 W PRSM non-repetitive peak reverse power dissipation 10/1000 µs exponential pulse; Tj = 25 °C prior to surge; see Fig.4 − 150 W − 600 V − 7.5 mJ Blocking diode VR continuous reverse voltage ERSM non-repetitive peak reverse avalanche energy 2001 Aug 20 L = 120 mH; Tj = Tj(max) prior to surge; inductive load switched off 2 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 ELECTRICAL CHARACTERISTICS ZENER/TVS Tj = 25 °C unless otherwise specified. TEMPERATURE COEFFICIENT VZ (V) at Itest (see Fig.7) SZ (%/K) at Itest MIN. NOM. MAX. MIN. MAX. 68 61 68 75 0.07 0.12 10 97 1.54 100 56 91 82 91 100 0.07 0.12 5 130 1.15 100 75 100 90 100 110 0.07 0.12 5 143 1.05 100 82 120 108 120 132 0.07 0.12 5 171 0.88 100 100 150 135 150 165 0.07 0.12 5 214 0.70 100 120 160 144 160 176 0.07 0.12 5 228 0.66 100 130 180 162 180 198 0.07 0.12 5 258 0.58 100 150 200 180 200 220 0.07 0.12 5 288 0.52 100 160 TYPE NUMBER SUFFIX(1) TEST CURRENT REVERSE CURRENT at STAND-OFF VOLTAGE WORKING VOLTAGE Itest (mA) CLAMPING VOLTAGE V(CL)R (V) IR (µA) Tj = 150 °C at IRSM (A)(2) MAX. at VR (V) MAX. Notes 1. To complete the type number the suffix is added to the basic type number, e.g. BZG142-68. 2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.4. ELECTRICAL CHARACTERISTICS BLOCKING DIODE Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 700 − − V CZB ZenBlock capacitance − 15 − pF IR reverse current f = 1 MHz; VR = 0; see Fig.8 VR = 600 V − − 5 µA VR = 600 V; Tj = 150 °C − − 100 µA THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS VALUE UNIT 25 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.9. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 2001 Aug 20 3 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 GRAPHICAL DATA IRSMhalfpage handbook, MBH451 4 handbook, halfpage (%) Ptot 100 (W) 90 3 2 50 1 10 t t1 0 100 0 T (°C) t2 200 MGD521 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted on an Al2O3 printed-circuit board as shown in Fig.9. In accordance with “IEC 60060-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Fig.3 Fig.4 Maximum total power dissipation as a function of temperature. MLD681 105 handbook, halfpage Non-repetitive peak reverse current pulse definition. MGU425 120 handbook, halfpage derating percentage (%) 100 PZSM (W) 104 80 103 60 40 102 20 10 10−1 1 10 102 103 0 104 tp (µs) 0 40 80 120 200 160 Tamb (°C) Tj = 25 °C prior to surge. See Fig.6. Fig.5 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 2001 Aug 20 Fig.6 4 Peak pulse power (PZSM, PRSM) or current (IRSM) derating curve. Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 MLD679 1500 MLD680 16 handbook, halfpage handbook, halfpage CZB IZ (pF) (mA) 12 (1) 1000 (2) 8 (3) 500 (1) (2) (3) 4 0 50 100 150 200 250 0 −200 300 VZ (V) Measured under pulsed conditions. Solid line: Tamb = 25 °C. Dotted line: Tamb = 150 °C. (1) VZ = 68 V. (2) VZ = 120 V. (3) VZ = 200 V. (1) VZ = 68 V. (2) VZ = 120 V. (3) VZ = 200 V. Fig.7 Fig.8 Working current as a function of working voltage; typical values. 50 4.5 50 2.5 1.25 MSB213 Dimensions in mm. Fig.9 Printed-circuit board for surface mounting. 2001 Aug 20 5 0 200 400 VR (V) 600 ZenBlock capacitance as function of reverse voltage; typical values. Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD124 H D A A1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D E H Q mm 2.3 2.0 0.05 1.6 1.4 0.2 4.5 4.3 2.8 2.4 5.5 5.1 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD124 2001 Aug 20 REFERENCES IEC JEDEC EIAJ DO-214AC EUROPEAN PROJECTION ISSUE DATE 99-10-22 6 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode BZG142 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Aug 20 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/03/pp8 Date of release: 2001 Aug 20 Document order number: 9397 750 08468