DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 0.6Ω @ VGS = 4.5V 0.9A 0.8Ω @ VGS = 2.5V 0.7A 1.0Ω @ VGS = 1.8V 0.5A 1.6Ω @ VGS = 1.5V 0.3A PRODUCT INFORMATION ADVANCED NEW BVDSS 20V Features and Benefits Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance Very low Gate Threshold Voltage, 1.0V Max. Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Case: U-DFN1212-3 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) Power Management Functions Battery Operated Systems and Solid-State Relays Load Switch U-DFN1212-3 D S pin 1 D G G Gate Protection Diode ESD PROTECTED Bottom View Top View S Pin-out Top view Equivalent Circuit Ordering Information (Note 5) Part Number DMN2400UFDQ-7 DMN2400UFDQ-13 Notes: Case U-DFN1212-3 U-DFN1212-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN1212-3 K24 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) K24 YM Date Code Key Year 2015 Code C Month Code Jan 1 2016 D Feb 2 DMN2400UFDQ Document number: DS37853 Rev. 3 - 2 2017 E Mar 3 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 6 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N 2025 M Dec D November 2015 © Diodes Incorporated DMN2400UFDQ Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS PRODUCT INFORMATION ADVANCED NEW Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 4.5V Steady State Continuous Drain Current (Note 7) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 20 ±12 0.9 0.7 ID A 0.7 0.5 3.0 0.8 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 7) Units V V IDM IS A A A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJA RJc TJ, TSTG Steady State Steady State Value 0.4 283 0.8 147 112 -55 to +150 (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 - V Zero Gate Voltage Drain Current TJ = +25°C IDSS - - Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS - - 80 100 ±1.0 VGS(th) 0.45 - Static Drain-Source On-Resistance RDS (ON) 0.35 0.45 0.6 0.7 1.4 0.7 1.0 0.6 0.8 1.0 1.6 1.2 37.0 5.7 4.2 68 0.5 0.07 0.1 4.06 7.28 13.74 10.54 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Units W °C/W W °C/W °C/W °C |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - - nA µA V Ω S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 4.5V, VGS = 0V VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 200mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VDS = 3V, ID = 200mA VGS = 0V, IS = 500mA, VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN2400UFDQ Document number: DS37853 Rev. 3 - 2 2 of 6 www.diodes.com November 2015 © Diodes Incorporated DMN2400UFDQ 2.0 1.5 VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.5 VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 TA = 150°C TA = 125°C TA = 85°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1.6 VGS = 1.5V 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 4.5V ID = 1.0A VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2400UFDQ Document number: DS37853 Rev. 3 - 2 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 0.8 VGS = 4.5V 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.2 TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 0 Fig. 2 Typical Transfer Characteristics 2.0 1.2 TA = 25°C TA = -55°C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) PRODUCT INFORMATION ADVANCED NEW VGS = 2.5V 3 of 6 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated DMN2400UFDQ 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 TA = 25°C 0.8 0.4 0.2 0 -50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 TA = 150°C 100 T A = 125°C 10 T A = 85°C TA = -55°C 1 TA = 25°C 0.1 2 20 5 4 6 8 10 12 14 16 18 20 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 10 RDS(on) Limited PW = 100µs 4 I D, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) PRODUCT INFORMATION ADVANCED NEW 1.2 VDS = 10V ID = 250mA 3 2 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms 1 PW = 1ms 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2400UFDQ Document number: DS37853 Rev. 3 - 2 0.6 0.01 4 of 6 www.diodes.com 0.1 1 10 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics 100 November 2015 © Diodes Incorporated DMN2400UFDQ r(t), TRANSIENT THERMAL RESISTANCE PRODUCT INFORMATION ADVANCED NEW 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 283°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A A3 Seating Plane D e L b1 E L1 E2 D2 b U-DFN1212-3 (Type C) Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 D2 0.75 0.95 0.85 e 0.80 E 1.15 1.25 1.20 E2 0.40 0.60 0.50 L 0.25 0.35 0.30 L1 0.65 0.75 0.70 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y1 U-DFN1212-3 (Type C) Dimensions Value C 0.800 G 0.200 X 0.320 X1 0.520 X2 1.050 Y 0.450 Y1 0.250 Y2 0.850 All Dimensions in mm X1 Y2 G X Y C DMN2400UFDQ Document number: DS37853 Rev. 3 - 2 5 of 6 www.diodes.com November 2015 © Diodes Incorporated DMN2400UFDQ IMPORTANT NOTICE PRODUCT INFORMATION ADVANCED NEW DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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