JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP55H12 N-Channel Power MOSFET TO-220-3L-C GENERAL DESCRIPTION The CJP55H12 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURE High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability 1. GATE 2. DRAIN 3. SOURCE APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 120 Pulsed Drain Current IDM 420 Single Pulsed Avalanche Energy (note1) EAS 1100 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature Range TSTG -55 ~+150 TL 260 Maximum Lead Temperure for Soldering Purposes , 1/8”from Case for 5 Seconds www.cj-elec.com 1 V A ℃ A-3,Mar,2015 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ 55 65 Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA VDS =55V, VGS =0V Zero gate voltage drain current IDSS 1 VDS=0.8xRatedV(BR)DSS,VGS=0V, 100 TJ=125℃ IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =40A gfs VDS =25V, ID =40A Gate-body leakage current V µA ±100 nA 4.0 V 5.5 mΩ On characteristics (note2) Forward transconductance 2.0 4.1 50 S Dynamic characteristics (note 3) Input capacitance Ciss 4900 Output capacitance Coss Reverse transfer capacitance Crss 460 td(on) 20 VDS =25V,VGS =0V,f =1MHz pF 470 Switching characteristics (note 2,3) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) VDD=30V, ID =2.0A,VGS=10V, 19 RGEN=2.5Ω 70 Turn-off fall time tf 30 Total gate charge QG 125 Gate to source charge QGS Gate to drain “miller” charge QGD VDS =30V ,VGS=10V,ID=30A, ns nC 24 49 Drain-Source Diode Characteristics Drain-source diode forward voltage(note2) Continuous drain-source diode forward current(note4) Pulsed drain-source diode forward current 1.2 V IS 120 A ISM 420 A VSD VGS = 0V, IS =40A Notes : 1. L=0.5mH, VDD=30V,VGS=10V, RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. Guaranteed by design, not subject to production 4. Surface mounted on FR4 board, t≤10s www.cj-elec.com 2 A-3,Mar,2015 Typical Characteristics Typical Characteristics Transfer Characteristics Output Characteristics 100 1000 VDS=25V Pulsed VGS= 7V 90 CJP55H12 Pulsed 60 DRAIN CURRENT DRAIN CURRENT 100 ID (A) VGS= 6V 70 ID (A) 80 50 40 VGS= 5.5V 30 Ta=25℃ 10 1 20 VGS= 5V 10 0 VGS= 4.5V 0 1 2 4 3 5 6 7 DRAIN TO SOURCE VOLTAGE VDS 8 9 0.1 10 0 1 2 (V) 3 4 5 6 7 GATE TO SOURCE VOLTAGE 8 VGS 9 10 (V) RDS(ON)—— VGS RDS(ON) —— ID 20 8 Ta=25℃ Pulsed ID=20A 18 Pulsed 7 (m) RDS(ON) 4 VGS=10V ON-RESISTANCE (m) RDS(ON) 5 ON-RESISTANCE 16 6 3 2 1 0 14 12 10 Ta=100℃ 8 6 4 Ta=25℃ 2 30 20 10 30 40 DRAIN CURRENT 50 ID 60 70 0 80 3 (A) 4 5 8 VGS 9 10 (V) 4.0 Pulsed 100 7 Threshold Voltage IS —— VSD 200 6 GATE TO SOURCE VOLTAGE (V) VTH 10 Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 3.5 1 0.1 3.0 ID=250uA 2.5 2.0 1.5 0.01 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 800 1000 1.0 25 1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Mar,2015 TO-220-3L-C Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V Φ www.cj-elec.com Dimensions In Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 9.910 10.250 8.950 9.750 12.650 12.950 2.540 TYP. 4.980 5.180 2.650 2.950 7.900 8.100 0.000 0.300 12.900 13.400 2.850 3.250 7.500 REF. 3.400 3.800 4 Dimensions In Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.390 0.404 0.352 0.384 0.498 0.510 0.100 TYP. 0.196 0.204 0.104 0.116 0.311 0.319 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF. 0.134 0.150 A-3,Mar,2015