DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features and Benefits V(BR)DSS RDS(ON) max 60V 13mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Applications • ® Case: POWERDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound • Backlighting • Power Management Functions • Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters • Terminal Connections Indicator: See diagram • UL Flammability Classification Rating 94V-0 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate) ® POWERDI 3333-8 S D Pin 1 S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN6013LFG-7 DMN6013LFG-13 Notes: Case ® POWERDI 3333-8 ® POWERDI 3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary N63= Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) N63 POWERDI is a registered trademark of Diodes Incorporated. DMN6013LFG Document number: DS36958 Rev. 1 - 2 1 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN6013LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Value 60 Units V VGSS ±20 V TA = +25°C TA = +70°C ID 10.3 8.3 A TC = +25°C TC = +100°C ID 45 28 A IDM 58.3 A IS 3 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH IAS 33.3 A Avalanche Energy, L = 0.1mH EAS 56.8 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Units W PD Value 1 123 69 2.1 60 34 40 RθJC 6.7 °C/W TJ, TSTG -55 to +150 °C Steady state t < 10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Total Power Dissipation (Note 6) PD Steady state t < 10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range °C/W W °C/W W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max BVDSS 60 — — V VGS = 0V, ID = 250μA IDSS — — 1 µA VDS = 60V, VGS = 0V IGSS — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA VGS(th) RDS(ON) 1 1.8 3 — 9.3 13 — 12.3 18 — 0.7 1.2 Unit mΩ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD Ciss — 2577 — pF Output Capacitance Coss — 162 — pF Reverse Transfer Capacitance Crss — pF Rg — 132 0.9 — Gate Resistance — Ω Total Gate Charge (VGS = 4.5V) Qg — 26.6 — nC Total Gate Charge (VGS = 10V) Gate-Source Charge Qg — 55.4 — nC Qgs — 9.3 — nC Gate-Drain Charge Qgd — 12.6 — nC Turn-On Delay Time tD(on) — 6.2 — ns tr — 9.9 — ns tD(off) — 27.6 — ns Turn-On Rise Time Turn-Off Delay Time V tf — 11.7 — ns Body Diode Reverse Recovery Time trr — 9.4 — nS Body Diode Reverse Recovery Charge Qrr — 18.6 — nC Turn-Off Fall Time Notes: Test Condition VGS = 10V, ID = 10A VGS = 4.5V, ID = 8A VGS = 0V, IS = 1.7A VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 10A VGS = 10V, VDS = 30V, RG = 3Ω, ID = 10A IF = 10A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMN6013LFG Document number: DS36958 Rev. 1 - 2 2 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN6013LFG 30 30 VGS = 4.0V 21 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V 24 18 15 VGS = 3.5V 12 9 6 15 10 TA = 150°C TA = 125°C 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V 0.012 VGS = 10V 0.008 0.006 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 3 0.014 0.01 TA = 25°C 30 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.03 ID = 10A 0.025 ID = 8mA 0.02 0.015 0.01 0.005 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.2 0.024 VGS = 10V 0.022 TA = 125°C 0.018 0.016 TA = 85°C 0.014 0.012 T A = 25°C 0.01 0.008 TA = -55°C 0.006 VGS = 10V ID = 10A 2 TA = 150°C 0.02 0.004 1.8 1.6 VGS = 4.5V ID = 8A 1.4 1.2 1 0.8 0.6 0.002 0 TA = 85°C TA = -55°C VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 20 5 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION VDS = 5.0V VGS = 10V 27 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 20 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMN6013LFG Document number: DS36958 Rev. 1 - 2 3 of 6 www.diodes.com June 2014 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 0.028 0.024 VGS = 4.5V ID = 8A 0.02 0.016 VGS = 10V ID = 10A 0.012 0.008 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 2 ID = 1mA 1.8 ID = 250µA 1.6 1.4 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) 2.2 10000 30 20 15 TA = 150°C TA = 125°C 10 T A = 25°C T A = 85°C 5 TA = -55°C Ciss 1000 Coss Crss f = 1MHz 0 0 100 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 100 8 10 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6013LFG 6 VDS = 30V ID = 10A 4 0 0 6 12 18 24 30 36 42 48 54 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 60 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 R DS(on) Limited DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms 0.01 2 0 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.01 PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMN6013LFG Document number: DS36958 Rev. 1 - 2 4 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN6013LFG 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 126°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ® A POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A3 A1 D D2 1 Pin 1 ID L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMN6013LFG Document number: DS36958 Rev. 1 - 2 5 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN6013LFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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