Mitsubishi ML925J16F-05 Ingaasp dfb laser diode Datasheet

MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
InGaAsP DFB LASER DIODES
Notice : Some parametric limits are subject to change
TYPE
NAME
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
DESCRIPTION
APPLICATION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
·~1.25Gbps digital transmission system
· Coarse WDM application
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( 0 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· 8 wavelength with 20nm space at 1470 ~ 1610nm
· φ5.6mm TO-CAN package
· Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
VRL
VRD
IFD
Tc
Tstg
Parameter
Light output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Reverse voltage (Photo diode)
Forward current (Photo diode)
Conditions
CW
---------
Ratings
10
150
2
20
2
Unit
mW
mA
V
V
mA
Case temperature
---
0 to +85
Storage temperature
---
-40 to +100
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Ith
Parameter
Threshold current
Iop
Operation current
Vop
η
λp
θ //
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
θ┴
SMSR
tr,tf
Im
Id
Ct
Side mode suppression ratio
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
CW
CW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
Tc= 0 to +85ºC
Ib=Ith, 20-80% <*>
CW, Po=5mW
VRD=5V
VRD=5V
MITSUBISHI
ELECTRIC
Min.
----------0.20
Max.
15
50
40
80
1.5
---
---
Typ.
8
30
25
60
1.1
0.28
<**>
25
Unit
35
V
mW/mA
nm
deg.
---
35
45
deg.
35
40
---
dB
mA
mA
--0.1
0.2
ns
0.05
0.2
--mA
----0.1
µA
--10
20
pF
<*> Except influence of the 18mm lead.
Dec. 2004
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
InGaAsP DFB LASER DIODES
Notice : Some parametric limits are subject to change
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S]
Symbol
Ith
Parameter
Threshold current
Iop
Operation current
Vop
η
λp
Operating voltage
Slope efficiency
Peak wavelength
SMSR
Pf
Df
tr,tf
Im
Id
Ct
Side mode suppression ratio
Fiber coupling power
Focul length
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
Min.
Typ.
Max.
Unit
CW
--8
15
mA
--30
50
CW, Tc=85ºC
CW, Po=5mW
--25
40
mA
--60
80
CW, Po=5mW, Tc=85ºC
CW, Po=5mW
--1.1
1.5
V
CW, Po=5mW
0.20
0.28
--mW/mA
CW, Po=5mW
nm
<**>
CW, Po=5mW
35
40
--dB
Tc= 0 to +85ºC
CW, Po=5mW, SMF
1.5
2.0
--mW
CW, Po=5mW, SMF
6.5
7.5
8.5
mm
Ib=Ith, 20-80% <*>
--0.1
0.2
ns
CW, Po=5mW
0.05
0.2
--mA
VRD=5V
----0.1
µA
VRD=5V
--10
20
pF
<*> Except influence of the 18mm lead.
<**> Peak wavelength
Symb
ol
Type
ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04
ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05
ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04
ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05
ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06
ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04
ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05
ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06
λp
MITSUBISHI
ELECTRIC
Test
condition
CW
Po=5mW
Tc=25ºC
Limits
Min.
Typ.
Max.
1467
1487
1507
1527
1547
1567
1587
1607
1470
1490
1510
1530
1550
1570
1590
1610
1473
1493
1513
1533
1553
1573
1593
1613
Unit
nm
Dec. 2004
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
InGaAsP DFB LASER DIODES
Notice : Some parametric limits are subject to change
OUTLINE DRAWINGS
Dimension : mm
ML925B11F
ML925B16F
ML925B22F
ML920J11S
ML920J16S
ML920J22S
(3)
+0
φ5.6 -0.03
Case
LD
φ4.25
Y
(1)
(2)
(0.25)
(3)
2-90°
PD
(2)
ML925B11F,ML925B16F,ML925B22F
(0.25)
(1)
(4)
X
(4)
(Glass)
(3)
LD
φ1.0Min.
(1)
2.1±0.1 5
Emitting
Facet
Reference
Plane
(2)
PD
1.2
(4)
18 ±1
±0.1
Case
φ2.0Min.
1.27 ±0.0 3
0.25 ±0.03
1±0.1
φ3.55±0.1
ML920J11S,ML920J16S,ML920J22S
φ2.0 ±0.25
(P.C.D.)
4-φ0.45 ±0.05
(1)
Pin Connection
( Top view )
(2)
Dimension : mm
ML925J11F
ML925J16F
ML925J22F
ML920L11S
ML920L16S
ML920L22S
(3)
+0
φ5.6 -0.03
Case
LD
φ4.3
Y
(1)
(2)
(0.25)
Top View
(3)
PD
(1)
(2)
X
ML925J11F,ML925J16F,ML925J22F
(0.25)
2-90°
(4)
(4)
1±0.1
(3)
φ3.75±0.1
Case
Z
±0.1
18 ±1
1.27 ±0.03
3.97 ±0.15
(2)
Emitting Facet
PD
Reference Plane
(4)
1.2
(7.51)
LD
(1)
ML920L11S,ML920L16S,ML920L22S
φ2.0±0.25
(P.C.D.)
4-φ0.45±0.05
(1)
(2)
MITSUBISHI
ELECTRIC
Pin Connection
( Top view )
Dec. 2004
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