UMS CHC3014-99F X-band core chip Datasheet

CHC3014-99F
RoHS COMPLIANT
X-band Core Chip
GaAs Monolithic Microwave IC
Description
The CHC3014-99F is a Receive and
Transmit X band Core Chip.
It includes a 6 bit phase shifter, a 6 bit
attenuator, a second 2 bit attenuator for
tuning, self-biased buffers, switch and TTL
compatible parallel interfaces.
This device is manufactured 0.25µm pHEMT
process, including via holes through the
substrate.
It is available in chip form.
Main Features
■
■
■
■
■
■
■
Operating frequency range: 8 -12GHz
Receive path linear gain: 13.5dB
Transmit path linear gain: 25dB
Phase shift range: 0-360° (step 5.625°)
Fine attenuator: 34.65dB (step 0.55dB)
Tuning attenuator: 6dB (step 2dB)
Chip size: 4.47 x 5.07 x 0.1mm
Main Characteristics
Tamb.= +25°C, V+ = 5V / V- = -5V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8
12
GHz
Rms_pe RMS phase error
2
°
Rms_att RMS attenuation error
0.3
dB
P-1dB Rx Output power at RxOUT @1dB gain comp.
16.5
dBm
Psat Tx Output power at TxOUT at saturation
20
dBm
NF
Noise figure in Rx mode
5.8
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHC3014-0293 - 20 Sep 10
1/20
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHC3014-99F
X-band Core Chip
Main Characteristics (1/2)
Tamb.= +25°C
Symbol
Parameter
Freq
Operating frequency
Mode Rx
Gl Rx
Linear gain in Rx mode at reference state (1)
S11 Rx
Input Return Loss in Rx mode
S22 Rx
Output Return Loss in Rx mode
NF
Noise figure in Rx mode (2)
P-1dB Rx
Min
8
Typ
11.5
13.5
-14
-18
5.8
dB
dB
dB
dB
16.5
dBm
25
-14
-12
dB
dB
dB
Output power at RxOUT at 1dB gain comp.
Gl Tx
S11 Tx
S22 Tx
Mode Tx
Linear gain in Tx mode at reference state (1)
Input Return Loss in Tx mode
Output Return Loss in Tx mode
PIN Tx
Input power range in Tx saturated mode
Psat Tx
Output power at TxOUT in saturated mode
22
0
Max
12
15
Unit
GHz
dBm
20
dBm
-15
0-360
5.625
dB
°
°
4±6
0±6
4±6
°
(3)
S11ISO.
PPE
Rms_pe
Ampvar
Rms
Ampvar
Isolated Mode
Return Loss at Rxin/Txout
6 bit Phase shifter (4)
Phase shift elementary step
Peak phase error
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
8GHz-8.5GHz
8.5GHz-11.5GHz
11.5GHz-12GHz
RMS phase error
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
8GHz-8.5GHz
8.5GHz-11.5GHz
11.5GHz-12GHz
Amplitude variation
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
RMS Amplitude variation
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
2.5
2
2.5
°
0±1
dB
0.3
dB
(1) Reference state: Tuning attenuator state = 1 / Fine attenuator state = 0 /
Phase shifter state = 0
(2) Noise Figure value for Tuning attenuator state = 0 / Fine attenuator state = 0 /
Phase shifter state = 0
(3) In this mode, the MFC presents a matched load on the RF access pad Rxin/Txout
Ref. : DSCHC3014-0293 - 20 Sep 10
2/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Main Characteristics (2/2)
Tamb.= +25°C
Symbol
Att_erratt
Rms_att
Phi_varatt
Rms_Phi
var
Att_ErrTB
Phi_varTB
V+
V-
Parameter
6 bit Fine Attenuator (4)
Fine Attenuator elementary step
Attenuation error
(Rx, all phase shifter states
tuning attenuator state 1)
Attenuation state 0-32
Attenuation state 33-47
Attenuation state 48-63
RMS attenuation error
(Rx, all phase shifter states
tuning attenuator state 1)
Phase variation
(Rx, all phase shifter states
tuning attenuator state 1)
Attenuation state 0-32
Attenuation state 33-47
Attenuation state 48-63
RMS Phase variation
(Rx, all phase shifter states
tuning attenuator state 1)
2 bit Tuning Attenuator (5)
Tuning Attenuator elementary step
Tuning attenuation error
Phase variation of tuning attenuator
Biasing (6)
Positive supply voltage
Negative supply voltage
Min
TI_Low
Control voltage low level
0
TI_High
Control voltage high level
2.4
I_+5_Rx
Biasing current in RX mode
I_+5_Tx
Biasing current in TX mode
I_+5
interface
I_-5
Typ
34.65
0.55
Max
Unit
dB
dB
0 ± 0.5
-0.25 ± 0.75
-0.5 ± 1.5
dB
0.3
dB
0±3
-1 ± 5
-4 ± 6
°
2
°
6
2
± 0.3
±2
dB
dB
dB
°
5
-5
V
V
+3.3 / +5
350
350 (7)
470 (8)
0.4
V
7.0
V
mA
mA
Control interface DC current
25
mA
Negative DC current
-50
mA
(4) Low influence of cross-talking between phase shifter and fine attenuator
(5) This function allows to adjust roughly the linear gain
(6) Each Amplifiers of Rx and Tx paths can be switched off thanks to separate biasing
pads (c.f. pad allocation table)
(7) Tx linear mode
(8) Tx saturated mode
Ref. : DSCHC3014-0293 - 20 Sep 10
3/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Definitions
i: Phase state index, 0 ≤ i ≤ 63
j: Fine attenuation state index, 0 ≤ j ≤ 63
Phase(i,j) =Phase_S21 in degree
dB_S21(i,j) =dB_S21 in dB
Peak Phase Error (PPE)
PPE(i,j) = Measured_Phase(S21)@state(i,j) - Measured_Phase(S21)@state(0,j) theoreticalPhaseValue@State(i,j)
Amplitude Variation (Ampvar)
Ampvar(i,j) = Measured_dB_S21@state(i,j) - Measured_dB_S21@state(0,j)
(i) is the phase state and in the range [0:63]
The translation of Ampvar(i,j) from dB to linear is given by: Ampvar(i,j)_lin = 10
Amp var( i , j )
20
Attenuation Error (Att_erratt)
Att_err(i,j) = Measured_dB_S21@state(i,j) - Measured_dB_S21@state(i,0) –
theoretical_dB_S21@state(i,j)
The translation of Att_err(i,j) from dB to linear is given by: Att_err(i,j)_lin = 10
Att _ err ( i , j )
20
Phase variation (Phivaratt)
Phivar(i,j) = Measured_Phase(S21)@state(i,j) - Measured_Phase(S21)@state(i,0)
RMS Peak Phase Error (Rms_pe)
63
∑ ( PPE (i, j ) − PPE )
Rms_pe =
2
i =0
64
63
Where PPE =
∑ PPE (i, j )
i =0
64
RMS Amplitude Variation (Rms_Ampvar)



Rms_Ampvar = 20 log1 +
Ref. : DSCHC3014-0293 - 20 Sep 10

1 63
.∑ (1 − Amp var(i, j ) _ lin) 2  (dB)

64 i =0

4/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
RMS Attenuation Error (Rms_att)



Rms_att = 20 log1 +

1 63
.∑ (1 − Att _ err (i, j ) _ lin) 2  (dB)

64 i =0

RMS Phase variation (Rms_Phivar)
63
∑ ( Phi var(i, j ))
Rms_Phivar =
j =0
64
2
(°)
Absolute Maximum Ratings
Tamb.= +25°C (1)
Symbol
Parameter
V+
Maximum positive bias voltage
V-
Negative voltage range
Values
Unit
6
V
-6 to -4
V
P_RFRX
Maximum peak input power overdrive in Rx mode
16
dBm
P_RFTX
Maximum peak input power overdrive in Tx mode
16
dBm
-2, +8
V
175
°C
Ai
CTRL voltage (TI_low, TI_high)
Tch
Maximum channel temperature (2)
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +125
°C
Tstg
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Thermal Resistance channel to ground paddle = 40°C /W for T= +85°C
Ref. : DSCHC3014-0293 - 20 Sep 10
5/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
[S] parameters in Rx mode
S21 vs. Frequency
Tuning attenuator states 0-1-2-3
Fine attenuator state 0, Phase shifter state 0
Noise Factor vs. Frequency
Tuning attenuator states 0-1-2-3
Fine attenuator state 0, Phase shifter state 0
S11 vs. Frequency
Tuning attenuator states 0-1-2-3
Fine attenuator states 0-1-2-4-8-16-32-63
Phase shifter states 0-1-2-4-8-16-32-63
S22 vs. Frequency
Tuning attenuator states 0-1-2-3
Fine attenuator states 0-1-2-4-8-16-32-63
Phase shifter states 0-1-2-4-8-16-32-63
Ref. : DSCHC3014-0293 - 20 Sep 10
6/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
[S] parameters in Tx mode
S21 vs. Frequency
Tuning attenuator state 1
Fine attenuator state 0, Phase shifter state 0
S11 vs. Frequency
Tuning attenuator state 1, Fine attenuator
state 0
Phase shifter states 0-1-2-4-8-16-32-63
Ref. : DSCHC3014-0293 - 20 Sep 10
S22 vs. Frequency
Tuning attenuator state 1, Fine attenuator
state 0
Phase shifter states 0-1-2-4-8-16-32-63
7/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
Phase shifter performances: Phase error
Rx and Tx mode
Phase error vs. frequency
Tuning attenuator state 1
Fine attenuator states 0-8-16-32
Phase error vs. phase state
for attenuation states 0, 8, 16, 32
All phase states
8GHz < Freq. < 12GHz
Phase error RMS
Phase shift vs. phase shifter state
Tuning attenuator state 1
Fine attenuator states 0-8-16-32
Freq. = 10GHz
Atten. state: 0-8-16-32
Atten. state: 63
Ref. : DSCHC3014-0293 - 20 Sep 10
8/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
Phase shifter performances: Amplitude variation
Rx and Tx mode
Amplitude variation vs. frequency
Tuning attenuator state 1
Fine attenuator states 0-8-16-32
Amplitude variation vs. phase state
Tuning attenuator state 1
Fine attenuator states 0-8-16-32
All phase states
8GHz < Freq. < 12GHz
Amplitude variation RMS
Tuning attenuator state 1
Fine attenuator states 0-8-16-32
Atten. state: 0-8-16-32
Atten. state: 63
Ref. : DSCHC3014-0293 - 20 Sep 10
9/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
Fine Attenuator performances: Attenuation error
Rx mode
Attenuation error vs. freq.
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Attenuation error vs. atten. state
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
All fine attenuator states
8GHz < Freq. < 12GHz
RMS attenuation error
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Attenuation vs. Fine attenuator state
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Freq. = 10GHz
Ref. : DSCHC3014-0293 - 20 Sep 10
10/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
Fine Attenuator performances: phase variation
Rx mode
Phase variation vs. freq.
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Phase variation vs. atten. state
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
8GHz < Freq. < 12GHz
RMS phase variation
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Ref. : DSCHC3014-0293 - 20 Sep 10
11/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical on wafer Measurements
Tamb.= +25°C
Tuning Attenuator performances
Rx mode
Tuning attenuation error vs. freq.
Fine attenuator state 0, Phase shifter state 0
Attenuation states 0–1–2-3
Tuning attenuation error vs. attenuation state
Fine attenuator state 0, Phase shifter state 0
Tuning attenuation vs. tuning atten. state at 10GHz
Fine attenuator state 0, Phase shifter state 0
Ref. : DSCHC3014-0293 - 20 Sep 10
12/20
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Typical Test Fixture Measurements in Temperature
Tamb = [-40, +25, 85] °C
These values are representative of de-embedded onboard measurements as defined on the
drawing 98658.
[S] parameter in RX mode
S21 vs. Frequency
Tuning attenuator states 1
Fine attenuator state 0, Phase shifter state 0
-40°C
+25°C
+85°C
[S] parameter in TX mode
S21 vs. Frequency
Tuning attenuator states 1
Fine attenuator state 0, Phase shifter state 0
-40°C
+25°C
+85°C
Ref. : DSCHC3014-0293 - 20 Sep 10
13/20
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Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
4 350
1 445
1 615
1 785
1 955
2 125
2 295
Mechanical data
2 3 45
4 900
4 700
4 500
6
4 235
4 065
3 895
3 725
3 555
3 385
3 215
3 045
2 875
2 705
2 535
2 365
2 195
2 025
1 855
1 685
1 515
1 345
1 175
1 005
835
13
14
1
15
16
17
18
19
20
21
22
23
120
5 070
7
8
9
10
11
12
2 735
2 535
2 335
000
4 350
105
1 615
1 785
1 955
2 125
2 295
000
570
370
170
24
24
27 26 25
4 365
4 965
4 470
Chip thickness = 100µm +/- 10µm.
RF pads (1, 6, 24) = 122 x 200µm²
DC and control pads (2, 3, 4, 5, 7 to 23, 25, 26, 27) = 120 x 100µm²
Pin
Pad
Pin
Pad
Description
Description
number name
number name
1
IO
Input/Output RF: RXout. TXin
15
-5
-5V supply voltage: interface
+5V supply voltage Amp. 3
16
SA
Switch bit 1
2
+5R
3
+5
+5V supply voltage : interface
17
SB
Switch bit 2
4
-5
-5V supply voltage
18
P1
Phase shifter bit 1
5
+5T
+5V supply voltage Amp. 4
19
P2
Phase shifter bit 2
6
TX
Output RF: TXout
20
P3
Phase shifter bit 3
7
C1
Coarse attenuator bit 1
21
P4
Phase shifter bit 4
8
C2
Coarse attenuator bit 2
22
P5
Phase shifter bit 5
9
A1
Attenuator bit 1
23
P6
Phase shifter bit 6
10
A2
Attenuator bit 2
24
Rx
Input RF: RXin
11
A3
Attenuator bit 3
25
+5R +5V supply voltage Amp. 1
12
13
14
A4
A5
A6
Attenuator bit 4
Attenuator bit 5
Attenuator bit 6
Ref. : DSCHC3014-0293 - 20 Sep 10
26
-5
27
+5
14/20
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-5V supply voltage
+5V supply voltage Amp. 2
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Evaluation Mother board 98658
SUB-D Pin out:
Ref. : DSCHC3014-0293 - 20 Sep 10
1- Gnd
6- SB
11- A1
16- P5
21- Nc
2- Nc
7- -5V
12- C1
17- P3
22- A4
3- P6
8- A5
13- Nc
18- P1
23- A2
4- P4
9- Nc
14- Nc
19- SA
24- C2
5- P2
10- A3
15- Nc
20- A6
25- Nc
15/20
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Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Recommended assembly plan
Note: Biasing pads 2-5-25-27 can be commonly connected to the +5V supply voltage
Bonding length recommendations
Pad name
IO
(Pad 1)
TX
(Pad 6)
RX
(Pad 24)
All others
Description
TXin/Rxout
Txout
RXin
DC and Interface
pads
Ref. : DSCHC3014-0293 - 20 Sep 10
Connection
Inductance (Lbonding) = 0.3nH
Two wires: diameter 25µm, length 0.470µm
Inductance (Lbonding) = 0.8nH
One wire: diameter 25µm, length 1mm
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Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Operating mode
General Biasing conditions
Pin number
Pad name
Value
Pin number
Pad name
Value
2
+5R
+5V
15
-5
-5V
3
+5
+5V
16
SA
0 or 3.3V
4
-5
-5V
17
SB
0 or 3.3V
5
+5T
+5V
18
P1
0 or 3.3V
7
C1
0 or 3.3V
19
P2
0 or 3.3V
8
C2
0 or 3.3V
20
P3
0 or 3.3V
9
A1
0 or 3.3V
21
P4
0 or 3.3V
10
A2
0 or 3.3V
22
P5
0 or 3.3V
11
A3
0 or 3.3V
23
P6
0 or 3.3V
12
A4
0 or 3.3V
25
+5R
+5V
13
A5
0 or 3.3V
26
-5
-5V
14
A6
0 or 3.3V
27
+5
+5V
SA
SB
Adaptative Isolation mode
3.3
3.3
RX path
3.3
0
TX path
0
3.3
Not used
0
0
Switche control table
Voltage to apply on the pads SA SB:
Note: When the MFC is used in adaptative isolation mode, it presents a matched load to the
RF access pad RXin/TXout
Tuning attenuator control table
Voltages to apply on the pads C1 C2:
state
Att (dB)
C2
C1
0
0
0
0
1
2
0
3.3
2
4
3.3
0
3
6
3.3
3.3
Coarse bit control table
Ref. : DSCHC3014-0293 - 20 Sep 10
17/20
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Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Attenuator control table
Voltage to apply on the pads A1 to A6:
state
Att
(dB)
A6
A5
A4
A3
A2
A1
state
Att
(dB)
A6
A5
A4
A3
A2
A1
0
0
0
0
0
0
0
0
33
18.15
3.3
0
0
0
0
3.3
1
0.55
0
0
0
0
0
3.3
34
18.7
3.3
0
0
0
3.3
0
2
1.1
0
0
0
0
3.3
0
35
19.25
3.3
0
0
0
3.3
3.3
3
1.65
0
0
0
0
3.3
3.3
36
19.8
3.3
0
0
3.3
0
0
4
2.2
0
0
0
3.3
0
0
37
20.35
3.3
0
0
3.3
0
3.3
5
2.75
0
0
0
3.3
0
3.3
38
20.9
3.3
0
0
3.3
3.3
0
6
3.3
0
0
0
3.3
3.3
0
39
21.45
3.3
0
0
3.3
3.3
3.3
7
3.85
0
0
0
3.3
3.3
3.3
40
22
3.3
0
3.3
0
0
0
8
4.4
0
0
3.3
0
0
0
41
22.55
3.3
0
3.3
0
0
3.3
9
4.95
0
0
3.3
0
0
3.3
42
23.1
3.3
0
3.3
0
3.3
0
10
5.5
0
0
3.3
0
3.3
0
43
23.65
3.3
0
3.3
0
3.3
3.3
11
6.05
0
0
3.3
0
3.3
3.3
44
24.2
3.3
0
3.3
3.3
0
0
12
6.6
0
0
3.3
3.3
0
0
45
24.75
3.3
0
3.3
3.3
0
3.3
13
7.15
0
0
3.3
3.3
0
3.3
46
25.3
3.3
0
3.3
3.3
3.3
0
14
7.7
0
0
3.3
3.3
3.3
0
47
25.85
3.3
0
3.3
3.3
3.3
3.3
15
8.25
0
0
3.3
3.3
3.3
3.3
48
26.4
3.3
3.3
0
0
0
0
16
8.8
0
3.3
0
0
0
0
49
26.95
3.3
3.3
0
0
0
3.3
17
9.35
0
3.3
0
0
0
3.3
50
27.5
3.3
3.3
0
0
3.3
0
18
9.9
0
3.3
0
0
3.3
0
51
28.05
3.3
3.3
0
0
3.3
3.3
19
10.45
0
3.3
0
0
3.3
3.3
52
28.6
3.3
3.3
0
3.3
0
0
20
11
0
3.3
0
3.3
0
0
53
29.15
3.3
3.3
0
3.3
0
3.3
21
11.55
0
3.3
0
3.3
0
3.3
54
29.7
3.3
3.3
0
3.3
3.3
0
22
12.1
0
3.3
0
3.3
3.3
0
55
30.25
3.3
3.3
0
3.3
3.3
3.3
23
12.65
0
3.3
0
3.3
3.3
3.3
56
30.8
3.3
3.3
3.3
0
0
0
24
13.2
0
3.3
3.3
0
0
0
57
31.35
3.3
3.3
3.3
0
0
3.3
25
13.75
0
3.3
3.3
0
0
3.3
58
31.9
3.3
3.3
3.3
0
3.3
0
26
14.3
0
3.3
3.3
0
3.3
0
59
32.45
3.3
3.3
3.3
0
3.3
3.3
27
14.85
0
3.3
3.3
0
3.3
3.3
60
33
3.3
3.3
3.3
3.3
0
0
28
15.4
0
3.3
3.3
3.3
0
0
61
33.55
3.3
3.3
3.3
3.3
0
3.3
29
15.95
0
3.3
3.3
3.3
0
3.3
30
16.5
0
3.3
3.3
3.3
3.3
0
31
17.05
0
3.3
3.3
3.3
3.3
3.3
32
17.6
0
0
0
0
3.3
0
Fine attenuator control table
Ref. : DSCHC3014-0293 - 20 Sep 10
18/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Phase shifter control table
Voltage to apply on the pads P1 to P6:
Phase
(deg)
state
P6
P5
P4
P3
P2
P1
state
Phase
(deg)
P6
P5
P4
P3
P2
P1
0
0
0
0
0
0
0
0
33
-185.625
3.3
0
0
0
0
3.3
1
-5.625
0
0
0
0
0
3.3
34
-191.25
3.3
0
0
0
3.3
0
2
-11.25
0
0
0
0
3.3
0
35
-196.875
3.3
0
0
0
3.3
3.3
3
-16.875
0
0
0
0
3.3
3.3
36
-202.5
3.3
0
0
3.3
0
0
4
-22.5
0
0
0
3.3
0
0
37
-208.125
3.3
0
0
3.3
0
3.3
5
-28.125
0
0
0
3.3
0
3.3
38
-213.75
3.3
0
0
3.3
3.3
0
6
-33.75
0
0
0
3.3
3.3
0
39
-219.375
3.3
0
0
3.3
3.3
3.3
7
-39.375
0
0
0
3.3
3.3
3.3
40
-225
3.3
0
3.3
0
0
0
8
-45
0
0
3.3
0
0
0
41
-230.625
3.3
0
3.3
0
0
3.3
9
-50.625
0
0
3.3
0
0
3.3
42
-236.25
3.3
0
3.3
0
3.3
0
10
-56.25
0
0
3.3
0
3.3
0
43
-241.875
3.3
0
3.3
0
3.3
3.3
11
-61.875
0
0
3.3
0
3.3
3.3
44
-247.5
3.3
0
3.3
3.3
0
0
12
-67.5
0
0
3.3
3.3
0
0
45
-253.125
3.3
0
3.3
3.3
0
3.3
13
-73.125
0
0
3.3
3.3
0
3.3
46
-258.75
3.3
0
3.3
3.3
3.3
0
14
-78.75
0
0
3.3
3.3
3.3
0
47
-264.375
3.3
0
3.3
3.3
3.3
3.3
15
-84.375
0
0
3.3
3.3
3.3
3.3
48
-270
3.3
3.3
0
0
0
0
16
-90
0
3.3
0
0
0
0
49
-275.625
3.3
3.3
0
0
0
3.3
17
-95.625
0
3.3
0
0
0
3.3
50
-281.25
3.3
3.3
0
0
3.3
0
18
-101.25
0
3.3
0
0
3.3
0
51
-286.875
3.3
3.3
0
0
3.3
3.3
19
-106.875
0
3.3
0
0
3.3
3.3
52
-292.5
3.3
3.3
0
3.3
0
0
20
-112.5
0
3.3
0
3.3
0
0
53
-298.125
3.3
3.3
0
3.3
0
3.3
21
-118.125
0
3.3
0
3.3
0
3.3
54
-303.75
3.3
3.3
0
3.3
3.3
0
22
-123.75
0
3.3
0
3.3
3.3
0
55
-309.375
3.3
3.3
0
3.3
3.3
3.3
23
-129.375
0
3.3
0
3.3
3.3
3.3
56
-315
3.3
3.3
3.3
0
0
0
24
-135
0
3.3
3.3
0
0
0
57
-320.625
3.3
3.3
3.3
0
0
3.3
25
-140.625
0
3.3
3.3
0
0
3.3
58
-326.25
3.3
3.3
3.3
0
3.3
0
26
-146.25
0
3.3
3.3
0
3.3
0
59
-331.875
3.3
3.3
3.3
0
3.3
3.3
27
-151.875
0
3.3
3.3
0
3.3
3.3
60
-337.5
3.3
3.3
3.3
3.3
0
0
28
-157.5
0
3.3
3.3
3.3
0
0
61
-343.125
3.3
3.3
3.3
3.3
0
3.3
29
-163.125
0
3.3
3.3
3.3
0
3.3
30
-168.75
0
3.3
3.3
3.3
3.3
0
31
-174.375
0
3.3
3.3
3.3
3.3
3.3
32
-180
3.3
0
0
0
0
0
Phase shifter control table
Ref. : DSCHC3014-0293 - 20 Sep 10
19/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
CHC3014-99F
X-band Core Chip
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form:
CHC3014-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHC3014-0293 - 20 Sep 10
20/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice